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Proceedings of SPIE Volume 3999

Advances in Resist Technology and Processing XVII
Editor(s): Francis M. Houlihan
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Volume Details

Volume Number: 3999
Date Published: 23 June 2000
Softcover: 126 papers (1290) pages
ISBN: 9780819436177

Table of Contents
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Dissolution/swelling behavior of cycloolefin polymers in aqueous base
Author(s): Hiroshi Ito; Robert D. Allen; Juliann Opitz; Thomas I. Wallow; Hoa D. Truong; Donald C. Hofer; Pushkara Rao Varanasi; George M. Jordhamo; Saikumar Jayaraman; Richard Vicari
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ArF photoresist containing novel acid labile cross-linker for high contrast and PED stability
Author(s): Geunsu Lee; Cha-Won Koh; Sung-Eun Hong; Jae Chang Jung; Min-Ho Jung; Hyeong-Soo Kim; Ki-Ho Baik
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Structurally variable cyclopolymers with excellent etch resistance and their application to 193-nm lithography
Author(s): John M. Klopp; Dario Pasini; Jean M. J. Frechet; Jeff D. Byers
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193-nm photoresists at 130-nm node: which lithographic performances for which chemical platform?
Author(s): Gilles R. Amblard; Jeff D. Byers; Wolf-Dieter Domke; Georgia K. Rich; Victoria L. Graffenberg; Shashikant Patel; Daniel A. Miller; Gabriel B. Perez
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Design and synthesis of new photoresist materials for ArF lithography
Author(s): Sang-Jun Choi; Hyun-Woo Kim; Sang-Gyun Woo; Joo-Tae Moon
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Negative-tone 193-nm resists
Author(s): Sungseo Cho; Anthony Vander Heyden; Jeff D. Byers; C. Grant Willson
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Minimization of the iso-dense bias in chemically amplified 193-nm positive resists: influence and monitoring of the diffusion well
Author(s): Benedicte P. Mortini; Severine Gally; Pierre-Olivier Sassoulas; Alain Prola; Patrick Jean Paniez
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Negative-tone resist for phase-shifting mask technology: a progress report
Author(s): Ernst Richter; Klaus Elian; Stefan Hien; Eberhard Kuehn; Michael Sebald; Masamitsu Shirai
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Solid-state NMR characterization of resist formulations for 193-nm lithography: chain dynamics and length scale of mixing
Author(s): Peter A. Mirau; Sharon A. Heffner; Ilya L. Rushkin; Francis M. Houlihan
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193-nm chemically amplified positive resists based on poly(norbornene-alt-maleic anhydride) with plasticizing additives
Author(s): Hiroshi Yoshino; Toshiro Itani; Michiya Takimoto; Hiroyoshi Tanabe
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Model study by FT-IR and 13C NMR of the interaction of poly(norbornene-alt-maleic anhydride) and its derivatives with select cholate dissolution inhibitors or with select iodonium and sulfonium phot
Author(s): Gary Dabbagh; Francis M. Houlihan; Ilya L. Rushkin; Richard S. Hutton; Omkaram Nalamasu; Elsa Reichmanis; Zhenglin Yan; Arnost Reiser
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Mechanism of single-layer 193-nm dissolution inhibition resist
Author(s): Zhenglin Yan; Francis M. Houlihan; Elsa Reichmanis; Omkaram Nalamasu; Arnost Reiser; Gary Dabbagh; Richard S. Hutton; Dan Osei; Jose Sousa; Kevin J. Bolan
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Defect printing issues with high-contrast chemically amplified resists
Author(s): Zhijian G. Lu; Wayne M. Moreau; Xiaoming Yin; K. Rex Chen; Alan C. Thomas; Peggy Lawson; George M. Jordhamo; ChungHsi J. Wu
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Effect of resist components on image spreading during postexposure bake of chemically amplified resists
Author(s): William D. Hinsberg; Frances A. Houle; Martha I. Sanchez; Michael E. Morrison; Gregory M. Wallraff; Carl E. Larson; John A. Hoffnagle; Phillip J. Brock; Gregory Breyta
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Spectroscopic characterization of acid mobility in chemically amplified resists
Author(s): Julie L. Jessop; Scott N. Goldie; Alec B. Scranton; Gary J. Blanchard; Bharath Rangarajan; Uzodinma Okoroanyanwu; Ramkumar Subramanian; Michael K. Templeton
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Modeling chemically amplified resists for 193-nm lithography
Author(s): Ebo H. Croffie; Mosong Cheng; Andrew R. Neureuther; Francis M. Houlihan; Raymond A. Cirelli; James R. Sweeney; Gary Dabbagh; Pat G. Watson; Omkaram Nalamasu; Ilya L. Rushkin; Ognian N. Dimov; Allen H. Gabor
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Real-time analysis of volatiles formed during processing of a chemically amplified resist
Author(s): Frances A. Houle; G. Michelle Poliskie; William D. Hinsberg; Dean Pearson; Martha I. Sanchez; Hiroshi Ito; John A. Hoffnagle
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Comparison of methods for acid quantification: impact of resist components on acid-generating efficiency
Author(s): James F. Cameron; Leslie Fradkin; Kathryn Moore; Gerd Pohlers
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Radiation and photochemistry of onium salt acid generators in chemically amplified resists
Author(s): Seiichi Tagawa; Seiji Nagahara; Toshiyuki Iwamoto; Masanori Wakita; Takahiro Kozawa; Yukio Yamamoto; David Werst; Alexander D. Trifunac
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Dissolution properties of cycloolefin-maleic-anhydride-based resist resins
Author(s): Ilya L. Rushkin; Francis M. Houlihan; Janet M. Kometani; Richard S. Hutton; Omkaram Nalamasu; Elsa Reichmanis; Ognian N. Dimov; Arturo N. Medina; Ulrike Varlemann; Allen H. Gabor; T. R. Sarrubi; Murrae J. Bowden
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Cycloolefin-maleic anhydride copolymers for 193-nm resist compositions
Author(s): M. Dalil Rahman; Jun-Bom Bae; Michelle M. Cook; Dana L. Durham; Takanori Kudo; Woo-Kyu Kim; Munirathna Padmanaban; Ralph R. Dammel
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Toward controlled resist line-edge roughness: material origin of line-edge roughness in chemically amplified positive-tone resists
Author(s): Qinghuang Lin; Ratnam Sooriyakumaran; Wu-Song Huang
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Effects of process parameters on pattern-edge roughness of chemically amplified resists
Author(s): Hui Peng Koh; Qunying Lin; Xiao Hu; Lap Hung Chan
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Lithography and line-edge roughness of high-activation-energy resists
Author(s): Seiya Masuda; Xiaoming Ma; G Noya; Georg Pawlowski
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Line-edge roughness of chemically amplified resists
Author(s): Tsukasa Azuma; Kenji Chiba; Maki Imabeppu; Daisuke Kawamura; Yasunobu Onishi
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Using alicyclic polymers in top surface imaging systems to reduce line-edge roughness
Author(s): Mark H. Somervell; David S. Fryer; Brian Osborn; Kyle Patterson; Sungseo Cho; Jeff D. Byers; C. Grant Willson
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Amine control for DUV lithography: identifying hidden sources
Author(s): Oleg P. Kishkovich; Carl E. Larson
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0.12-um logic process using a 248-nm step-and-scan system
Author(s): Daniel Claire Baker; Tammy Zheng; Clifford H. Takemoto; Satyendra S. Sethi; Calvin Gabriel; Gregory S. Scott
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Novel resist material for sub-100-nm contact hole pattern
Author(s): Jeong Hee Chung; Sang-Jun Choi; Yool Kang; Sang-Gyun Woo; Joo-Tae Moon
Show Abstract
Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists
Author(s): Pushkara Rao Varanasi; Kathleen M. Cornett; Margaret C. Lawson
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Prospects for using existing resists for evaluating 157-nm imaging systems
Author(s): Theodore H. Fedynyshyn; Roderick R. Kunz; Scott P. Doran; Russell B. Goodman; Michele L. Lind; Jane E. Curtin
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Approach for VUV positive resists using photodecomposable polymers
Author(s): Shinji Kishimura; Akiko Katsuyama; Masaru Sasago; Masamitsu Shirai; Masahiro Tsunooka
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New materials for 157-nm photoresists: characterization and properties
Author(s): Michael K. Crawford; Andrew E. Feiring; Jerald Feldman; Roger H. French; Mookkan Peri Periyasamy; Frank L. Schadt; Robert J. Smalley; Fredrick C. Zumsteg; Roderick R. Kunz; Veena Rao; Ling Liao; Susan M. Holl
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Polymers for 157-nm photoresist applications: a progress report
Author(s): Kyle Patterson; Mikio Yamachika; Raymond Jui-Pu Hung; Colin J. Brodsky; Shintaro Yamada; Mark H. Somervell; Brian Osborn; Daniel S. Hall; Gordana Dukovic; Jeff D. Byers; Will Conley; C. Grant Willson
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Theoretical calculations of photoabsorption of molecules in the vacuum ultraviolet region
Author(s): Nobuyuki N. Matsuzawa; Shigeyasu Mori; Ei Yano; Shinji Okazaki; Akihiko Ishitani; David A. Dixon
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Methods to improve radiation sensitivity of chemically amplified resists by using chain reactions of acid generation
Author(s): Seiji Nagahara; Yusuke Sakurai; Masanori Wakita; Yukio Yamamoto; Seiichi Tagawa; Masanori Komuro; Ei Yano; Shinji Okazaki
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Development of analysis system for F2-excimer laser photochemical processes
Author(s): Atsushi Sekiguchi; Mikio Kadoi; Yasuhiro Miyake; Toshiharu Matsuzawa; Chris A. Mack
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Pattern transfer of sub-100-nm features in polysilicon using a single-layer photoresist and extreme ultraviolet lithography
Author(s): Gregory Frank Cardinale
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Reaction mechanisms in silicon-based resist materials: polysilanes for deep-UV, EUV, and x-ray lithography
Author(s): Shu Seki; Yusuke Sakurai; Kazuki Maeda; Yoshihisa Kunimi; Seiji Nagahara; Seiichi Tagawa
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Gel layer model for photoresist development
Author(s): Joon Yeon Cho; Se-Jin Choi; Byung-Uk Kim; Jung-Moon Park; Seung Jong Lee
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Solvent content of thick photoresist films
Author(s): Octavia P. Lehar; John P. Sagan; Lizhong Zhang; Ralph R. Dammel
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Process characterization of an aqueous developable photosensitive polyimide on a broadband stepper
Author(s): Warren W. Flack; Scott Kulas; Craig L. Franklin
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Mechanism-dependent resolution for protein micro/nano-patterning
Author(s): Dan V. Nicolau
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Process characterization of an ultrathick strippable photoresist using a broadband stepper
Author(s): Warren W. Flack; Scott Kulas; David W. Minsek
Show Abstract
Chemistry of photoresist reclamation III
Author(s): Hideki Nishida; Akihiko Igawa; Kenji Ohshiro; Itaru Shiiba
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New development of cost-effective sub-0.18-um lithography with i-line
Author(s): Hoesik Chung; Jinhang Jung; Youngsun Kim; KwangSoek Choi; NamHee Yoo; Sangwoong Yoon; JeEung Park
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Development of an i-line attenuated phase shift process for dual inlay interconnect lithography
Author(s): John L. Sturtevant; Benjamin C. P. Ho; Vincent C. Geiszler; Matthew T. Herrick; Charles Fredrick King; Russell L. Carter; Bernard J. Roman; Lloyd C. Litt; Brad Smith; Kirk J. Strozewski
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High-yield resin fractionation using a liquid/liquid centrifuge
Author(s): Stan F. Wanat; M. Dalil Rahman; Balaji Narasimhan; Douglas S. McKenzie; Michelle M. Cook
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New bottom antireflection coating approach for KrF lithography at sub-150-nm design rule
Author(s): Etsuko Iguchi; Hiroshi Komano; Toshimasa Nakayama
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PHSF-HASN series photothermoresists
Author(s): Shangxian Yu; Xiao Tong; Weijian Zhao; Xinhua Jin; Jiangnan Gu
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Positive photosensitive polyimide synthesized by block-copolymerization for KrF lithography
Author(s): Taro Itatani; Sucheta Gorwadkar; Takafumi Fukushima; Masanori Komuro; Hiroshi Itatani; Masao Tomoi; Tsuenenori Sakamoto; Shunichi Matsumoto
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Synthesis and lithographic performance of poly-4-hydroxphenyl-ethyl-methacrylate-based negative resists
Author(s): Jeffrey D. Gelorme; Laura L. Kosbar; Teresita O. Graham; Ali Afzali-Kushaa
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Design and study of aqueous processable positive-tone photoresists
Author(s): Shintaro Yamada; Jordan Owens; Timo Rager; Morton Nielsen; Jeff D. Byers; C. Grant Willson
Show Abstract
Structural design of a new class of acetal polymer for DUV resists
Author(s): Toru Fujimori; Shiro Tan; Toshiaki Aoai; Fumiyuki Nishiyama; Tsukasa Yamanaka; Makoto Momota; Shinichi Kanna; Yasumasa Kawabe; Morio Yagihara; Tadayoshi Kokubo; Sanjay Malik; Lawrence Ferreira
Show Abstract
Acid amplifiers: proton transfer or direct acid formation
Author(s): Wu-Song Huang; Ranee W. Kwong; Wayne M. Moreau
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Simulation-based formulation of a nonchemically amplified resist for 257-nm laser mask fabrication
Author(s): Benjamen M. Rathsack; Cyrus Emil Tabery; Timothy B. Stachowiak; Jeff A. Albelo; C. Grant Willson
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Mechanistic similarities in the photochemistry of two classes of photoacid generators: a laser flash photolytic study
Author(s): Chris A. Coenjarts; Fausto Ortica; Juan C. Scaiano; Huiyou Liu; Gerd Pohlers; James F. Cameron; Anthony Zampini
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Contact hole size-reducing methods by using water-soluble organic over-coating material (WASOOM) as a barrier layer toward 0.15-um contact hole: resist flow technique I
Author(s): Jun-Sung Chun; Shekhar Bakshi; Stanley Barnett; James Shih; Shih-Ked Lee
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Encapsulated inorganic resist technology
Author(s): Theodore H. Fedynyshyn; Scott P. Doran; Michele L. Lind; I. Sondi; Egon Matijevic
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Manipulation of chemically amplified resist dissolution rate behavior for improved performance
Author(s): Medhat A. Toukhy; Karin R. Schlicht; Brian Maxwell; Somboun Chanthalyma
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Certified photometric standard for quality control and validation in UV/VIS analysis of lithographic resist materials and processes
Author(s): Aron L. Shultz; Kathy McLain; Jerry D. Messman
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Thermal acid generator (TAG) synthesis variables and their effect on resist performance
Author(s): Joseph E. Oberlander; Stan F. Wanat; Douglas S. McKenzie; Elaine Kokinda
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Study of acid transport using IR spectroscopy and SEM
Author(s): Michael D. Stewart; Mark H. Somervell; Hoang Vi Tran; Sergei V. Postnikov; C. Grant Willson
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Recent advances in a molecular level lithography simulation
Author(s): Gerard M. Schmid; Vivek K. Singh; Lewis W. Flanagin; Michael D. Stewart; Sean D. Burns; C. Grant Willson
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Molecular design and synthesis of functional photothermopolymers from hydroxyl benzoic acids
Author(s): Xiao Tong; Jiangnan Gu; Liyuan Wang; Yingquan Zou; Shangxian Yu
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SiON as a panacea for KrF photolithography? Study on process optimization, substrate dependency, and delay time stability on silicon nitride and BPTEOS film
Author(s): Jun-Sung Chun; Shekhar Bakshi; Stanley Barnett; James Shih; Shih-Ked Lee
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Bake condition effect on hybrid lithography process for negative-tone chemically amplified resists
Author(s): Laurent Pain; F. Sala; C. Higgins; B. Dal'zotto; Serge V. Tedesco
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Effect of surfactant-added developer on development of the chemically amplified photoresist
Author(s): Satoshi Kawada; Yukio Tamai; Shunkichi Omae; Tadahiro Ohmi
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Environmentally stable lithography with acidity-optimized TARC material
Author(s): Kenichi Asahi; Yoshiyuki Tani; Ryuichi Yoshida; Koji Shimomura; Yusuke Takano; Yoshino Nishiwaki; Hatsuyuki Tanaka
Show Abstract
Techniques to print sub-0.2-um contact holes
Author(s): Kayo Aramaki; T. Hamada; DongKwan Lee; Hiroshi Okazaki; Naoko Tsugama; Georg Pawlowski
Show Abstract
Progress in qualifying and quantifying the airborne base sensitivity of modern chemically amplified DUV photoresists
Author(s): Devon A. Kinkead; Monique Ercken
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Resist thickness optimization for multiple resists in a research and development lithography environment
Author(s): David Ashby Steele; Branden Linley; Tien Dinh
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Characterization of UV6 photoresist stabiliztion and implant masking for exclusive implementation in 180-nm device processing
Author(s): Patrick S. Lysaght; Billy Nguyen; Gennadi Bersuker; Joe Bennett; Tony Hare; Theodore G. Doros; James V. Beach
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Characteristic study of electron beam stabilization for deep-UV photoresists
Author(s): Myoung-Soo Kim; Jae-Hak Choi; Chi Hyeong Rho; Min-Jong Hong; Bum-Jin Jun; Myung-Goon Gil; Bong-Ho Kim; Dong-Jun Ahn; Matthew F. Ross; Selmer S. Wong
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Novel wafer track-based resolution enhancement technology for 248-nm DUV lithography
Author(s): Tom X. Zhong; Emir Gurer; John W. Lewellen; Ed C. Lee
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Novel spin-coating technology for 248-nm/193-nm DUV lithography and low-k spin on dielectrics of 200-mm/300-mm wafers
Author(s): Emir Gurer; Tom X. Zhong; John W. Lewellen; Ed C. Lee
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Improvement of resist profile roughness in bilayer resist process
Author(s): Chang-Young Jeong; Sang-Wook Ryu; Ki-Yeop Park; Won-Kyu Lee; Seung-Woog Lee; Dai-Hoon Lee
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Dual damascene photo process using negative-tone resist
Author(s): Xuelong Shi; Allen C. Fung; Stephen Hsu; Zongyu Li; Timothy Nguyen; Robert John Socha; Will Conley; Mircea V. Dusa
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Thick-film positive DUV photoresist for implant layer application
Author(s): J. Michael Mori; James W. Thackeray; Cheng-Bai Xu; George W. Orsula; Elizabeth Prettyman; Rosemary Bell; Robert M. Routh
Show Abstract
Fast imaging algorithm for simulating pattern transfer in deep-UV resist and extracting postexposure bake parameters
Author(s): Mosong Cheng; Ebo H. Croffie; Andrew R. Neureuther
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Process margin enhancement for 0.25-um metal etch process
Author(s): Chung Yih Lee; Wei Wen Ma; Eng Hooi Lim; Alex Tsun-Lung Cheng; Raymond Joy; Matthew F. Ross; Selmer S. Wong; Trey Marlowe
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Advanced microlithography process with chemical shrink technology
Author(s): Takashi Kanda; Hatsuyuki Tanaka; Yoshiaki Kinoshita; Natsuo Watase; Ronald J. Eakin; Takeo Ishibashi; Toshiyuki Toyoshima; Naoki Yasuda; Mikihiro Tanaka
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Differences between wafer and bake plate temperature uniformity in proximity bake: a theoretical and experimental study
Author(s): Natarajan Ramanan; Austin Kozman; James B. Sims
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Examination of the relationships between photoresist dissolution and diffusion characteristics, lithographic predictors, and simulated lithographic performance
Author(s): Steven G. Hansen
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Optimization of bottom antireflective coating materials for dual damascene process
Author(s): Shuji Ding; Wen-Bing Kang; Hatsuyuki Tanaka; Sunit S. Dixit; Ronald J. Eakin; Jianhui Shan; Eleazar Gonzalez; Ying Liu; Dinesh N. Khanna
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193-nm photoresist development at Union Chemical Labs., ITRI
Author(s): Mao-Ching Fang; Jui-Fa Chang; Ming-Chia Tai; Tzu-Yu Lin; Ting-Chung Liu; Chien-Hung Liu
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Optimizing of thin-film interference effects in KrF lithography for 0.15-um design rules
Author(s): Seung-Chul Oh; Young-Cheol Kim; Sang-Hoon Nah; Hoon Huh; Sang-Bum Han
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Progressions in deep-ultraviolet bottom antireflective coatings
Author(s): George E. Bailey; Nicholas K. Eib; Earnest C. Murphy
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Lithographic performance enhancement using top antireflective coating compositions made from water-soluble polymers
Author(s): Sunit S. Dixit; M. Dalil Rahman
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Semiempirical calculations for the optimization of microlithographic materials and processes
Author(s): Dan V. Nicolau
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Acidity control for compatibility of novel organic bottom antireflective coating materials with various KrF and ArF photoresists
Author(s): Sung-Eun Hong; Min-Ho Jung; Jae Chang Jung; Geunsu Lee; Jin-Soo Kim; Cha-Won Koh; Ki-Ho Baik
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Comparison of acrylate and methacrylate resin system in ArF lithography
Author(s): Yasunori Uetani; Hiroaki Fujishima
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Study of bilayer negative-tone silylation process for 193-nm lithography
Author(s): Hiroyuki Watanabe; Isao Satou; Masayuki Endo; Hiroaki Morimoto
Show Abstract
Mechanical property of organic resists for ArF lithography
Author(s): Taku Morisawa; Toshihiko P. Tanaka; Tsuneo Terasawa
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Temperature rising effect of 193-nm chemically amplified resist during postexposure bake
Author(s): Young-Mi Lee; Moon-Gyu Sung; Eun-Mi Lee; Young-Soo Sohn; Heungin Bak; Hye-Keun Oh
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Second-generation 193-nm bottom antireflective coatings (BARCs)
Author(s): James D. Meador; Xie Shao; Vandana N. Krishnamurthy; Mikko Arjona; Mandar Bhave; Gu Xu; James B. Claypool; Anne Lindgren
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Improved patterning quality of SU-8 microstructures by optimizing the exposure parameters
Author(s): Zhong Geng Ling; Kun Lian; Linke Jian
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193-nm thin-layer imaging performance of 140-nm contact hole patterning and DOE dry development process optimization of multilayer resist process
Author(s): Won D. Kim; Sung-Bo Hwang; Georgia K. Rich; Victoria L. Graffenberg
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Film characterization and evaluation of process performance for the modified electron beam resist
Author(s): Fu-Hsiang Ko; Jyh-Hua Ting; Cheng-Tung Chou; Li-Tung Hsiao; Tiao-Yuan Huang; Bau-Tong Dai
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Temperature dependence of acid molecular diffusion in resist polymer films simulated by molecular dynamics
Author(s): Minoru Toriumi; Ichiro Okabe; Takeshi Ohfuji; Masayuki Endo; Hiroaki Morimoto
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Soft bake effect in 193-nm chemically amplified resist
Author(s): Moon-Gyu Sung; Young-Mi Lee; Eun-Mi Lee; Young-Soo Sohn; Ilsin An; Hye-Keun Oh
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Chemically amplified resists based on norbornene polymer with 2-trimethylsilyl-2-propyl ester protecting group
Author(s): Jin-Baek Kim; Jae-Jun Lee; Jae-Sung Kang
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Development of advanced ArF resist using alicyclic methacrylate copolymer: the optimum quenchers for this copolymer
Author(s): Yukiya Wakisaka; Tadayuki Fujiwara; Masayuki Tooyama; Hideaki Kuwano; Koji Nishida
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Novel polymers for 193-nm single-layer resist based on cycloolefin polymers
Author(s): Hyun-Woo Kim; Si-Hyeung Lee; Ki-Young Kwon; Dong-Won Jung; Sook Lee; Kwang-Sub Yoon; Sang-Jun Choi; Sang-Gyun Woo; Joo-Tae Moon
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Lithographic evaluation of recent 193-nm photoresists
Author(s): Zhou Lin; Greg H. Baxter; Martha M. Rajaratnam; John D. Zimmerman
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Design and lithographic performances of 193-specific photoacid generators
Author(s): Hiroyuki Ishii; Shinji Usui; Katsuji Douki; Toru Kajita; Hitoshi Chawanya; Tsutomu Shimokawa
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High-performance 193-nm positive resist using alternating polymer system of functionalized cyclic olefins/maleic anhydride
Author(s): Katsuji Douki; Toru Kajita; Tsutomu Shimokawa
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Application of photodecomposable base concept to 193-nm resists
Author(s): Munirathna Padmanaban; Jun-Bom Bae; Michelle M. Cook; Woo-Kyu Kim; Axel Klauck-Jacobs; Takanori Kudo; M. Dalil Rahman; Ralph R. Dammel; Jeff D. Byers
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Advanced materials for 193-nm resists
Author(s): Tohru Ushirogouchi; Koji Asakawa; Naomi Shida; Takeshi Okino; Satoshi Saito; Yoshinori Funaki; Akira Takaragi; Kentaro Tsutsumi; Tatsuya Nakano
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Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)
Author(s): Pushkara Rao Varanasi; George M. Jordhamo; Margaret C. Lawson; K. Rex Chen; William R. Brunsvold; Timothy Hughes; Robin Keller; Mahmoud Khojasteh; W. Li; Robert D. Allen; Hiroshi Ito; Juliann Opitz; Hoa D. Truong; Thomas I. Wallow
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Materials design and lithographic performance of maleic anhydride/cycloolefin copolymer for ArF resist
Author(s): Joo Hyeon Park; Jae-Young Kim; Dong-Chul Seo; Sun-Yi Park; Hosull Lee; Seong-Ju Kim; Jae Chang Jung; Ki-Ho Baik
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193-nm positive-tone bilayer resist based on norbornene-maleic anhydride copolymers
Author(s): Ratnam Sooriyakumaran; Debra Fenzel-Alexander; Phillip J. Brock; Carl E. Larson; Richard A. Di Pietro; Gregory M. Wallraff; Donald C. Hofer; Dan J. Dawson; Arpan P. Mahorowala; Marie Angelopoulos
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Epoxidized novolac resist (EPR) for high-resolution negative- and positive-tone electron beam lithography
Author(s): Evangelia Tegou; Evangelos Gogolides; Panagiotis Argitis; Ioannis Raptis; George P. Patsis; Nikos Glezos; Zoilo C. H. Tan; Kim Y. Lee; Phuong T. Le; Yautzong Hsu; Michael Hatzakis
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Lithographic performance of advanced thin resists
Author(s): Mike V. Williamson; Andrew R. Neureuther
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Patterning of hyperbranched resist materials by e-beam
Author(s): Alexander R. Trimble; David C. Tully; Jean M. J. Frechet; David R. Medeiros; Marie Angelopoulos
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Dendrimer-based chemically amplified resists for sub-100-nm lithography
Author(s): David C. Tully; Alexander R. Trimble; Jean M. J. Frechet
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High-performance EB chemically amplified resists using alicyclic protective groups
Author(s): Jun-Ichi Kon; Koji Nozaki; Takahisa Namiki; Ei Yano
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SU-8 negative photoresist for optical mask manufacturing
Author(s): Alexei L. Bogdanov
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Simulation of structure profiles in optical lithography of thick DNQ-novolak-based photoresists
Author(s): Song-Jo Chung; Joachim Schulz; Herbert Hein; Juergen Mohr
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Studies directed to the design and development of a high-energy implant resist
Author(s): Warren Montgomery; PingYong Xu; PingHung Lu; Salem Methsun; Ralph R. Dammel; Nara Meyyappan; Noriyuki Kobayashi; David Pritchard
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Measuring the effects of sub-0.1-um filtration on 248-nm photoresist performance
Author(s): Barry Gotlinsky; James V. Beach; Michael Mesawich
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Pattern collapse in high-aspect-ratio DUV and 193-nm resists
Author(s): Wolf-Dieter Domke; Victoria L. Graffenberg; Shashikant Patel; Georgia K. Rich; Heidi B. Cao; Paul F. Nealey
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Environmental stability of chemically amplified resists: proposing an industry standard methodology for testing
Author(s): Kim R. Dean; Oleg P. Kishkovich
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Tailored novolak resins for advanced photoresists by a two-step procedure: new insight into the molecular structure is achieved by coupling GPC and MALDI-TOF-MS
Author(s): Freimut Reuther; Ralph-Peter Krueger; Guenter Schulz; Guenther Baehr; Ulrich Westerwelle; Gabi Gruetzner
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Design strategies for 157-nm single-layer photoresists: lithographic evaluation of a poly(A-trifluoromethyl vinyl alcohol) copolymer
Author(s): Dirk Schmaljohann; Young C. Bae; Gina L. Weibel; Alyssandrea H. Hamad; Christopher Kemper Ober
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Surface composition of a norbornene-maleic-anhydride-based 193-nm photoresists for different photoacid generators as determined by x-ray photoelectron spectroscopy
Author(s): Henry W. Krautter; Francis M. Houlihan; Richard S. Hutton; Ilya L. Rushkin; R. L. Opila
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