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PROCEEDINGS VOLUME 3998

Metrology, Inspection, and Process Control for Microlithography XIV
Editor(s): Neal T. Sullivan
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Volume Details

Volume Number: 3998
Date Published: 2 June 2000
Softcover: 98 papers (952) pages
ISBN: 9780819436160

Table of Contents
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1999 ITRS metrology roadmap and its implications for lithography
Author(s): Alain C. Diebold; David C. Joy
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Comparison of electrical CD measurements and cross-section lattice-plane counts of submicrometer features replicated in (100) silicon-on-insulator material
Author(s): Michael W. Cresswell; John E. Bonevich; Thomas J. Headley; Richard A. Allen; Lucille A. Giannuzzi; Sarah C. Everist; Rathindra N. Ghoshtagore; Patrick J. Shea
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Linewidth measurement intercomparison on a BESOI sample
Author(s): John S. Villarrubia; Andras E. Vladar; Jeremiah R. Lowney; Michael T. Postek; Richard A. Allen; Michael W. Cresswell; Rathindra N. Ghoshtagore
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193-nm scanner characterization by SEM and electrical CD measurements
Author(s): Laurent Pain; Yorick Trouiller; Alexandra Barberet; O. Guirimand; Gilles L. Fanget; N. Martin; Yves Quere; M. E. Nier; Emile Lajoinie; Didier Louis; Michel Heitzmann; P. Scheiblin; A. Toffoli
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Benchmarking of advanced CD-SEMs against the new unified specification for sub-0.18-um lithography
Author(s): Alain G. Deleporte; John A. Allgair; Charles N. Archie; G. William Banke; Michael T. Postek; Jerry E. Schlesinger; Andras E. Vladar; Arnold W. Yanof
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Potentials of online scanning electron microscope performance analysis using NIST reference material 8091
Author(s): Michael T. Postek; Andras E. Vladar; Nien-Fan Zhang; Robert D. Larrabee
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Metrics of resolution and performance for CD-SEMs
Author(s): David C. Joy; Yeong-Uk Ko; Justin J. Hwu
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Is a production-level scanning electron microscope linewidth standard possible?
Author(s): Michael T. Postek; Andras E. Vladar; John S. Villarrubia
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Improving stigmation control of the CD-SEM
Author(s): Bryan Choo; Shobhana Punjabi; Carmen Morales; Bhanwar Singh; Michael K. Templeton; Mark P. Davidson
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E-beam column monitoring for improved CD SEM stability and tool matching
Author(s): Timothy S. Hayes; Randall S. Henninger
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Phase profilometry for the 193-nm lithography gate stack
Author(s): Nickhil H. Jakatdar; Xinhui Niu; Junwei Bao; Costas J. Spanos; Sanjay K. Yedur; Alain G. Deleporte
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Manufacturing considerations for implementation of scatterometry for process monitoring
Author(s): John A. Allgair; David C. Benoit; Robert R. Hershey; Lloyd C. Litt; Ibrahim S. Abdulhalim; William Braymer; Michael Faeyrman; John Charles Robinson; Umar K. Whitney; Yiping Xu; Piotr Zalicki; Joel L. Seligson
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Scatterometry for the measurement of metal features
Author(s): Christopher J. Raymond; Stephen W. Farrer; Scott Sucher
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Lithographic process monitoring using diffraction measurements
Author(s): Emmanuel M. Drege; Dale M. Byrne
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Process window metrology
Author(s): Christopher P. Ausschnitt; William Chu; Linda M. Hadel; Hok Ho; Peter Talvi
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Design and analysis of across-chip linewidth variation for printed features at 130 nm and below
Author(s): J. Fung Chen; Robert John Socha; Kumar Puntambekar; Kurt E. Wampler; Roger F. Caldwell; Mircea V. Dusa; John C. Love; Greg Yeric; Brenda Stoner
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Process control and optimization of conventional metal process for 0.18-micron logic technology
Author(s): Ramkumar Subramanian; Stuart E. Brown; Susan H. Chen; Carmen Morales; Ernesto Gallardo; Bhanwar Singh
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New process monitor for reticles and wafers: the MEEF meter
Author(s): Franklin M. Schellenberg; Pat LaCour; Olivier Toublan; Geoffrey T. Anderson; Raymond Yip
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Influence of intermetal dielectric thickness on overlay mark size variation in photolithography
Author(s): Suk-Joo Lee; Ji-Yong Yoo; Young-Chang Kim; Hak Kim; Jeong-Lim Nam; U-In Chung; Geung-Won Kang; Woo-Sung Han
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Dimensional metrology system of shape and scale in pattern transfer
Author(s): John M. McIntosh; Brittin C. Kane; Erik C. Houge; Catherine B. Vartuli; Xin Mei
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Automated process control monitor for 0.18-um technology and beyond
Author(s): Bryan Choo; Trina Riley; Bernd Schulz; Bhanwar Singh
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Feature integrity monitoring for process control using a CD SEM
Author(s): John A. Allgair; Gong Chen; Stephen J. Marples; David M. Goodstein; John D. Miller; Frank Santos
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Shape control using sidewall imaging
Author(s): Bo Su; Ramiel Oshana; Mina Menaker; Yogev Barak; Xuelong Shi
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Computer modeling of charging-induced electron beam deflection in electron beam lithography
Author(s): Justin J. Hwu; Yeong-Uk Ko; David C. Joy
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Survey of semiconductor data management systems technology
Author(s): Kenneth W. Tobin; Thomas P. Karnowski; Fred Lakhani
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SEM-based ADC evaluation and integration in an advanced process fab
Author(s): Jeff W. Ritchison; Ariel Ben-Porath; Eric Malocsay
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Paradigm for selecting the optimum classifier in semiconductor automatic defect classification applications
Author(s): Martin A. Hunt; James S. Goddard; James A. Mullens; Regina K. Ferrell; Bobby R. Whitus; Ariel Ben-Porath
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Process-induced defects in sub-0.15-nm device patterning using 193-nm lithography
Author(s): Uzodinma Okoroanyanwu; Christopher Pike; Harry J. Levinson
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Clean solutions to the incoming wafer quality impact on lithography process yield limits in a dynamic copper/low-k research and development environment
Author(s): Patrick S. Lysaght; Israel Ybarra; Harry Sax; Gaurav Gupta; Michael West; Theodore G. Doros; James V. Beach; Jim Mello
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Lithography process control and optimization based on defect capture and reduction
Author(s): Jeffrey A. Leavey; John Boyle; Andrew Skumanich
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Use of intentional-defect wafers for tool inspection validation
Author(s): Richard J. Jarvis; Christine Chua
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Alternating PSM phase defect printability for 100-nm KrF lithography
Author(s): Juhwan Kim; Wang Pen Mo; Ronald L. Gordon; Alvina M. Williams
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Printability of reticle repairs in a 248-nm DUV production environment
Author(s): Xavier Gerard; Laurent Deloraine; Frank Sundermann; Eric Rouchouze
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Design considerations for a photo track monitor reticle
Author(s): Dan Sutton
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Photomask CD correlation of an optical linewidth measurement tool and a scanning electron microscope with reference to a Stylus NanoProfilometer
Author(s): Bryan S. Kasprowicz; Benjamin George Eynon; Troy B. Morrison; Chih-Yu Wang
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Experiments in mask metrology using a CD AFM
Author(s): Martin A. Klos; Sanjay K. Yedur
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Accurate dimensional metrology with atomic force microscopy
Author(s): Ronald G. Dixson; Rainer G.J. Koening; Joseph Fu; Theodore V. Vorburger; Brian T. Renegar
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Integrated reflectance for monitoring silicon oxynitride antireflective coatings on a CVD cluster tool
Author(s): James Matt Holden; William A. McGahan; Martin J. Seamons
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New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm
Author(s): Pierre Boher; Jean-Philippe Piel; Patrick Evrard; Christophe Defranoux; Marta Espinosa; Jean-Louis P. Stehle
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Optical characterization in the vacuum ultraviolet with variable angle spectroscopic ellipsometry: 157 nm and below
Author(s): James N. Hilfiker; Bhanwar Singh; Ron A. Synowicki; Corey L. Bungay
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Overlay measurement: hidden error
Author(s): Christopher J. Gould; Francis G. Goodwin; William R. Roberts
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Predictive process control for sub-0.2-um lithography
Author(s): Terrence E. Zavecz; Rene M. Blanquies
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Overlay performance on tungsten CMP layers using the ATHENA alignment system
Author(s): Giovanni Rivera; Laura Rozzoni; Elisabetta Castellana; Guido Miraglia; Pui Leng Lam; Johannes Plauth; Allan Dunbar; Merritt Phillips
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Effects of alignment accuracy on CMP process for overlay control
Author(s): Jong-Kyun Hong; GuChul Joung; Hyun-Jo Yang; Jinwon Park; Jeong Soo Kim; Bong-Ho Kim
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Subwavelength alignment mark signal analysis of advanced memory products
Author(s): Xiaoming Yin; Alfred K. K. Wong; Donald C. Wheeler; Gary Williams; Eric A. Lehner; Franz X. Zach; Byeong Y. Kim; Yuzo Fukuzaki; Zhijian G. Lu; Santo Credendino; Timothy J. Wiltshire
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Reduction of wafer-scale error between DI and FI in multilevel metallization by adjusting edge detection method
Author(s): Sang-Gil Bae; Young-Keun Kim; Ki-Yeop Park; Jin-Soo Kim; Won-Kyu Lee; S.W. Lee; Dai-Hoon Lee
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The Neolithography Consortium
Author(s): James E. Potzick
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FIB metrology in advanced lithography
Author(s): Drew Barnes; Christian R. Musil; Don E. Yansen
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Accelerated yield learning in agressive lithography
Author(s): Kevin M. Monahan; Scott M. Ashkenaz; Xing Chen; Patrick J. Lord; Mark Andrew Merrill; Rich Quattrini; James N. Wiley
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Defects and metrology of ultrathin resist films
Author(s): Uzodinma Okoroanyanwu; Jonathan L. Cobb; Paul M. Dentinger; Craig C. Henderson; Veena Rao; Kevin M. Monahan; David Luo; Christopher Pike
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Characterization and modeling of out-diffusion of cesium, manganese, and zinc impurities from deep-ultraviolet photoresist
Author(s): Fu-Hsiang Ko; Mei-Ya Wang; Tien-Ko Wang; ChinCheng Yang; Tiao-Yuan Huang; ChengSan Wu
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Contamination control during shipping, handling, and storage of reticles
Author(s): Sheng-Bai Zhu
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Modular monitoring for the photolithography environment
Author(s): Amir Wachs
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Wafer-level colinearity monitoring for TFH applications
Author(s): Patrick Moore; Gary Newman; Kelly J. Abreau
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Diffusion and adsorption mechanism of metallic impurities from chemically amplified photoresist onto silicon-based substrates
Author(s): ChinCheng Yang; Fu-Hsiang Ko; Mei-Ya Wang; Tien-Ko Wang; Tiao-Yuan Huang
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New voltage-contrast imaging method for detection of electrical failures
Author(s): Mari Nozoe; Hidetoshi Nishiyama; Hiroyuki Shinada; Maki Tanaka
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Quantifying the effect of pattern density on focus offset
Author(s): Shane Geary; James Thompson
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Automatic macro inspection system
Author(s): Toshiaki Kitamura; Yasuharu Nakajima; Hiroyuki Matsumoto; Takeo Omori; Koichiro Komatsu
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Active vibration suppression on an image of a scanning electron microscope
Author(s): Koichi Matsuda; Natsuki Kawamura; Yoichi Kanemitsu; Shinya Kijimoto; Kazuhide Watanabe; Eiichi Izumi
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Optimum design for optical proximity correction in submicron bipolar technology using critical shape error analysis
Author(s): Graham G. Arthur; Brian Martin; Christine Wallace
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Metric for process optimization on substrates with transparent stacks in optical lithography
Author(s): Brian Martin; Graham G. Arthur
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Simple model for light scattering by a COP
Author(s): Yoichiro Iwa
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Pitch-dependent intrafield dimensional offsets in advanced lithography
Author(s): Christine Wallace; Brian Martin; Graham G. Arthur
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Implementation of automated macro after develop inspection in a production lithography process
Author(s): Arnold W. Yanof; Vincent E. Plachecki; Frank W. Fischer; Marcelo Cusacovich; Chris Nelson; Mark Andrew Merrill
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Application of optical proximity correction in manufacturing and its effect on process control
Author(s): Christine Wallace; Claire Duncan; Brian Martin
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Utilizing in-line CD SEMs for intensive field mapping
Author(s): Margaret S. Fyfield; George E. Bailey; Waiman Ng; Mohsen Ahmadian
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Measurement of excimer-laser-induced birefringence in fused silica and calcium fluoride
Author(s): Baoliang Bob Wang
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Yield enhancement based on defect reduction using on-the-fly automatic defect classification
Author(s): Manda Kulkarni; Andrew Skumanich
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Monte Carlo model of charging in resists in e-beam lithography
Author(s): Yeong-Uk Ko; Justin J. Hwu; David C. Joy
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Process variations of thin films and antireflective coatings
Author(s): Yoel Cohen; Ori Braitbart
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Characterization of solvent-rich resist coating process
Author(s): Bo Zhou; Ed V. Denison
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At-wavelength characterization of DUV-radiation-induced damage in fused silica
Author(s): Sang Hun Lee; Fan Piao; Patrick P. Naulleau; Kenneth A. Goldberg; William G. Oldham; Jeffrey Bokor
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Enhanced defect capture and analysis based on automatic defect classification at post-lithographic inspection
Author(s): Bryon Hance; Israel Ne'eman; Andrew Skumanich
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Single closed contact for 0.18-micron photolithography process
Author(s): Cristina Cheung; Khoi A. Phan; Robert Jue Chiu
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Characterization of wafer-induced shift on overlay target using post- etch artifact wafers
Author(s): Alan S. Wong
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Metrology issues of reticles with optical proximity correction-assist features using the atomic force microscope
Author(s): Kuo-Jen Chao; Robert J. Plano; Jeffrey R. Kingsley
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Novel design of WIS-free overlay measurement mark
Author(s): Jin-seok Yang; Sang Bok Lee; Seung-Chul Oh; Hoon Huh; Sang-Bum Han
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Defect printability for sub-0.18-micron design rules using 193-nm lithography process and binary OPC reticle
Author(s): Khoi A. Phan; Chris A. Spence; Jeff A. Schefske; Uzodinma Okoroanyanwu; Harry J. Levinson
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Impact of optical absorption on process control for sub-0.15-nm device patterning using 193-nm lithography
Author(s): Uzodinma Okoroanyanwu; Harry J. Levinson; Jeremias Romero; Bhanwar Singh; Shih-Jung Lee
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Ultraprecision focus technique
Author(s): Vivek Garg; Boris B. Grek
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Advancements in organic antireflective coatings for dual-damascene processes
Author(s): Shreeram V. Deshpande; Xie Shao; James E. Lamb; Nickolas L. Brakensiek; Joe Johnson; Xiaoming Wu; Gu Xu; William J. Simmons
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Comparison of ANOVA and Latin square measurement system analysis techniques
Author(s): John A. Allgair
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Effective exposure-dose measurement in optical microlithography
Author(s): Soichi Inoue; Tadahito Fujisawa; Kyoko Izuha
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Application of top-down CD-SEM metrology in measuring and correlating profile with CD data in resist films with various thickness and sidewall profiles
Author(s): Sunit S. Dixit; Amir R. Azordegan; Ying Liu
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New approach to the focus exposure matrix (FEM) sample measurement using CD-SEM
Author(s): Hidetoshi Morokuma; Satoru Yamaguchi; Tatsuya Maeda; Takashi Iizumi; Kazuo Ueda
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Absolute dosimetry for extreme-ultraviolet lithography
Author(s): Kurt W. Berger; Richard H. Campiotti
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Specular spectroscopic profilometry for the sub-0.18-um polySi-gate processes
Author(s): Xinhui Niu; Nickhil H. Jakatdar; Sanjay K. Yedur; Bhanwar Singh
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Interfield sampling method dependency of overlay and global alignment
Author(s): Jin Hong; Junghyun Lee; Hanku Cho; Joo-Tae Moon; Sang-In Lee
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Protecting the DUV process and optimizing optical transmission
Author(s): Andrew J. Dallas; Debbie Arends; Kristen Fischer; Jon Joriman; Kristine M. Graham; Richard Ringold
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Tighter process control of poly- and active-to-contact overlay registration via multilayer analysis
Author(s): Peter M. C. Lee; Paul C. Knutrud
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Specular spectral profilometry on metal layers
Author(s): Junwei Bao; Xinhui Niu; Nickhil H. Jakatdar; Costas J. Spanos; Joseph J. Bendik
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Charging control through extraction field
Author(s): Bo Su; Opher Harel
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Overlay metrology productivity and stability enhancements using an offline recipe database manager (RDM)
Author(s): Stephen J. DeMoor; Robert M. Peters; Todd E. Calvert; Stephanie L. Hilbun; George P. Beck; Kristi L. Bushman; Russell D. Fields
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Determination of optical properties of thin films and surfaces in 157-nm lithography
Author(s): Vladimir Liberman; Theodore M. Bloomstein; Mordechai Rothschild
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Re-evaluating simple lambda-based design rules for low-K1 lithography process control
Author(s): Sergei V. Postnikov; Kevin D. Lucas; Bernard J. Roman; Karl Wimmer
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Use of fast Fourier transform methods in maintaining stability of production CD-SEMs
Author(s): Benjamin D. Bunday; Mark P. Davidson
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Sampling plan optimization for detection of lithography and etch CD process excursions
Author(s): Richard C. Elliott; Raman K. Nurani; Sung Jin Lee; Luis G. Ortiz; Moshe E. Preil; J. George Shanthikumar; Trina Riley; Greg A. Goodwin
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Importance of measurement accuracy in statistical process control
Author(s): Farid Askary; Neal T. Sullivan
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