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Proceedings of SPIE Volume 3873

19th Annual Symposium on Photomask Technology
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Volume Details

Volume Number: 3873
Date Published: 30 December 1999
Softcover: 100 papers (1056) pages
ISBN: 9780819434685

Table of Contents
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Electron-beam lithography simulation for mask making: V. Impact of GHOST proximity effect correction on process window
Author(s): Chris A. Mack; Charles A. Sauer
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Advanced e-beam lithography system JBX-9000MV for 180-nm masks
Author(s): Hitoshi Takemura; Tadashi Komagata; Yasutoshi Nakagawa; Kazumitsu Tanaka
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CD performance of a new high-resolution laser pattern generator
Author(s): Per Liden; Tomas Vikholm; Lars Kjellberg; Mans Bjuggren; Klas A. Edgren; John-Oscar Larson; Steven Haddleton; Per Askebjer
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Extension of graybeam writing for the 130-nm technology node
Author(s): Jan M. Chabala; Frank E. Abboud; Charles A. Sauer; Suzanne Weaver; Maiying Lu; Henry Thomas Pearce-Percy; Ulrich Hofmann; Matthew Vernon; Dinh Ton; Damon M. Cole; Robert J. Naber
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Improved critical dimension control in 0.8-NA laser reticle writers
Author(s): Henry Chris Hamaker; Gregory E. Valentin; Jerry Martyniuk; Brenda G. Martinez; Mike Pochkowski; Lorna D. Hodgson
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Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator
Author(s): Benjamen M. Rathsack; Cyrus Emil Tabery; Timothy B. Stachowiak; Tim E. Dallas; Cheng-Bai Xu; Mike Pochkowski; C. Grant Willson
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Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads
Author(s): Chris Constantine; Russell J. Westerman; Jason Plumhoff
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Dry etching technology of Cr films to produce fine-pattern reticles under 720 nm with ZEP-7000
Author(s): Hitoshi Handa; Satoshi Yamauchi; Kouji Hosono; Yutaka Miyahara
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Dry etch yield enhancement by use of after-develop inspection
Author(s): Franklin D. Kalk; Keith J. Brankner; Lori Peters; Anthony Vacca; Scott Pomeroy; David Emery
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High-transmission PSM inspection sensitivity
Author(s): Chunhung Wu; David Wang; Chien-Ming Wang; Li-Jui Chen; Shuo-Yen Chou; Clare Wu; Nathan Schumann; Reuven Falah; Wolfgang Staud
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Detection and repair of multiphase defects on alternating phase-shift masks for DUV lithography
Author(s): Susumu Nagashige; Kohki Hayashi; Shinji Akima; Hiroyuki Takahashi; Kazuaki Chiba; Yoshiro Yamada; Yuichi Matsuzawa
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High-resolution DUV inspection system for 150-nm generation masks
Author(s): Mitsuo Tabata; Hideo Tsuchiya; Yasushi Sanada; Takeshi Nishizaka; Hiroaki Hirazawa; Noboru Kobayashi; Hideo Nagai; Tomohide Watanabe; Katsuki Oohashi; Hiromu Inoue; Takehiko Nomura; Akira Ono
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High-resolution ultraviolet defect inspection of DAP (darkfield alternate phase) reticles
Author(s): Lars W. Liebmann; Scott M. Mansfield; Alfred K. K. Wong; Jacek G. Smolinski; Song Peng; Kurt R. Kimmel; Maciej W. Rudzinski; James N. Wiley; Larry S. Zurbrick
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Formation and detection of subpellicle defects by exposure to DUV system illumination
Author(s): Brian J. Grenon; Charles R. Peters; Kaustuve Bhattacharyya; William Waters Volk
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Definition of new quality criteria and assessment means for masks at 150-nm design rules and beyond
Author(s): Emanuele Baracchi; Hans-Juergen Brueck; Thomas Engel; Yair Eran; Frederic P. Lalanne; Olivier Maurin; Volodymyr Ordynskyy; Thomas Schaetz; Karl Sommer
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MEEF in theory and practice
Author(s): Franklin M. Schellenberg; Chris A. Mack
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Novel high-speed approach for CD uniformity mapping and monitoring
Author(s): Shirley Hemar; Amikam Sade; Juergen Fandrich
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Techniques to detect and analyze photomask CD uniformity errors
Author(s): Anthony Vacca; Waiman Ng; Geoffrey T. Anderson; Barry Rockwell; Aihua Dong; Darren Taylor
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Effects of mask error factor on process window capability
Author(s): Dan L. Schurz; Warren W. Flack; Simon J. Cohen; Thomas H. Newman; Khiem T. Nguyen
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System architecture choices for an advanced mask writer (100 to 130 nm)
Author(s): Varoujan Chakarian; Frederick Raymond; Charles A. Sauer; Sergey V. Babin; Robert Innes; Allan L. Sagle; Ulrich Hofmann; Bassam Shamoun; David Trost; Abe Ghanbari; Frank E. Abboud
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Cost analysis of 4x and 6x 9-in. reticles for future lithography
Author(s): Lloyd C. Litt; Michael E. Kling; Terry Perkinson
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Fabrication of membrane mask for next-generation lithography
Author(s): Dong-Wan Kim; Jared D. Lera; Hanku Cho; Joo-Tae Moon
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CD-SEM characterization of reticle-level pattern density effects
Author(s): Raymond Yip; Mico Chu; Steven Fu; Dave Castro; Waiman Ng; Geoffrey T. Anderson; Micheal J. Sherrill; Norman Chen; Yao Ching Ku
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Integration of optical proximity correction strategies in strong phase shifters design for poly-gate layers
Author(s): Chris A. Spence; Marina V. Plat; Emile Y. Sahouria; Nicolas B. Cobb; Franklin M. Schellenberg
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Development of simplified process for KrF excimer halftone mask with chrome-shielding method
Author(s): Shinji Kobayashi; N. Oka; Kunio Watanabe; Kiyochige Ohmori; M. Inoue; K. Iguchi
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Control methodology of off-target for varying pattern densities with chrome dry etch
Author(s): Juergen Hochmuth; Guenther G. Ruhl; Thomas P. Coleman
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Sub-0.18-um line/space lithography using 248-nm scanners and assisting feature OPC masks
Author(s): Huitzu Lin; John C.H. Lin; Ching Siun Chiu; Ying-Ying Wang; Anthony Yen
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PMJ' 99 panel discussion review: OPC mask technology for KrF lithography
Author(s): Hiroichi Kawahira; Naoya Hayashi; Hideaki Hamada
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Through-focus image balancing of alternating phase-shifting masks
Author(s): Song Peng
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ZrSiO: a new and robust material for attenuated phase-shift mask in ArF lithography
Author(s): Toshio Onodera; Takahiro Matsuo; Keisuke Nakazawa; Junji Miyazaki; Tohru Ogawa; Hiroaki Morimoto; Takashi Haraguchi; Nobuhiko Fukuhara; Tadashi Matsuo; Masao Otaki; Susumu Takeuchi
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Proximity effects of alternating phase-shift masks
Author(s): Wilhelm Maurer; Christoph M. Friedrich; Leonhard Mader; Joerg Thiele
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Realization of practical attenuated phase-shift mask with high-transmission KrF excimer laser exposure
Author(s): Nobuhito Toyama; Hiroyuki Miyashita; Yasutaka Morikawa; Hiroshi Fujita; Kazuya Iwase; Hiroshi Mohri; Naoya Hayashi; Hisatake Sano
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Transmission and phase balancing of alternating phase-shifting masks (5x): theoretical and experimental results
Author(s): Uwe A. Griesinger; Rainer Pforr; Juergen Knobloch; Christoph M. Friedrich
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Challenges and opportunities for 157-nm mask technology
Author(s): Jan Mulkens; Christian Wagner; Kevin D. Cummings; Richard A. George
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Properties of fused silica for 157-nm photomasks
Author(s): Lisa A. Moore; Charlene M. Smith
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Dry and F-doped fused silica for photomask substrate in 157-nm lithography
Author(s): Hiroki Jinbo; Seishi Fujiwara; Norio Komine; Naomasa Shiraishi; Soichi Owa
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Masking materials for 157-nm lithography
Author(s): Bruce W. Smith; Anatoly Bourov; Matthew Lassiter; Michael J. Cangemi
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Mask substrate requirements and development for extreme ultraviolet lithography (EUVL)
Author(s): William M. Tong; John S. Taylor; Scott Daniel Hector; Melissa K. Shell
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Comparison of at-wavelenth inspection, printability, and simulation of nanometer-scale substrate defects in extreme ultraviolet lithography (EUVL)
Author(s): Gregory Frank Cardinale; John E. M. Goldsmith; Avijit K. Ray-Chaudhuri; Aaron Fisher; Scott Daniel Hector; Pawitter J. S. Mangat; Zorian S. Masnyj; David P. Mancini; Bill Wilkinson; Jeffrey Bokor; Seongtae Jeong; Scott C. Burkhart; Charles J. Cerjan; Christopher C. Walton; Cindy C. Larson; Pei-yang Yan; Guojing Zhang
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Process optimization of e-beam lithography with high-accelerated voltage
Author(s): Jun Yoshida; Noriaki Takagi; Masayoshi Tsuzuki; Naoki Takahashi; Yoshiro Yamada; Yuichi Matsuzawa
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Improvement of CD accuracy for next-generation reticles using HL-800M and CA resists
Author(s): Hidetoshi Satoh; Yasunari Sohda; Hidetaka Saitoh; Morihisa Hoga; Suyo Asai; Katsuhiro Kawasaki; Kazui Mizuno
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Traceability, reproducibility, and comparability of grid calibrations
Author(s): Harald Bosse; Wolfgang Haessler-Grohne; Bernd Brendel
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Lithography simulation of sub-0.30-um resist features for photomask fabrication using i-line optical pattern generators
Author(s): Benjamen M. Rathsack; Cyrus Emil Tabery; Cecilia E. Philbin; C. Grant Willson
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Performance of the EL-4+ maskwriter for advanced chrome on glass reticles
Author(s): Neal Caldwell; Raymond Jeffer; Mark Lawliss; John G. Hartley
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Practical gold thin-film photocathodes for advanced electron-beam lithography
Author(s): Suresh Gosavi; Jack M. McCarthy; C. Neil Berglund; William A. Mackie; L. A. Southall
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Incorporation of laser proximity correction into mask production
Author(s): Anja Rosenbusch; James Unruh; Hartmut Kirsch; David Y. Chan
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Reduction of beam-induced pattern placement errors in MEBES systems
Author(s): David W. Alexander; Lee Veneklasen; Suzanne Weaver; Jeffrey K. Varner; Damon M. Cole
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Measurement of residual birefringence in photomask blanks
Author(s): Baoliang Bob Wang; Patrick M. Troccolo
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Puddle developers for ZEP 7000
Author(s): Kakuei Ozawa; Nobunori Abe
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High-resolution thickness measurements and evaluation of a photomask blank
Author(s): Teruyoshi Hirano; Ryuji Matsuo; Kozue Tomiyama; Ichiro Yazawa; Hiroshi Wada; Masao Otaki; Kazuhiko Omote
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Analysis of photomask CD errors depending on development methods
Author(s): Seong-Yong Moon; Won-Tai Ki; Byung-Cheol Cha; Seong-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn
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Chemically amplified positive resist for next-generation photomask fabrication
Author(s): Kohji Katoh; Kei Kasuya; Tadashi Arai; Toshio Sakamizu; Hidetoshi Satoh; Hidetaka Saitoh; Morihisa Hoga
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Birefringence dispersion in photomask substrates for DUV lithography
Author(s): Richard Priestley
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Improving CDs on a MEBES system by improving the ZEP 7000 development and dry etch process
Author(s): Barbara Albrethsen-Keck; Maiying Lu; Charles A. Sauer
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Comparison of DNQ/novolac resists for e-beam exposure
Author(s): Theodore H. Fedynyshyn; Scott P. Doran; Michele L. Lind; Theodore M. Lyszczarz; William F. DiNatale; Donna Lennon; Charles A. Sauer; Jeff Meute
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Die-to-die and die-to-database capability analysis for advanced OPC inspection
Author(s): Jerry Xiaoming Chen; Drew R. Russell; Robert Terhune; John Riddick; Franklin D. Kalk; Kevin D. Lucas; Bradley J. Falch
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Repair and printability study of binary chrome masks with OPC features for 0.18-um technology node
Author(s): Diane K. Stewart; David C. Ferranti; John C. Morgan; Joshua Lessing; Jeff Kuo; Ching Siun Chiu
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Defect sensitivity and inspectability of the KLA SEMSpec for alternating phase-shift masks
Author(s): Jason M. Benz
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Reticle defect size calibration using low-voltage SEM and pattern recognition techniques for sub-200-nm defects
Author(s): Larry S. Zurbrick; Steve Khanna; Jay Lee; James J. Greed; Ellen R. Laird; Rene M. Blanquies
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Reticle blank inspection and its role in zero-defect manufacturing
Author(s): Kevin A. Krause; William B. Howard
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Carbon stain effects from SEM exposure
Author(s): John Grantz; Robert K. Henderson; James L. Wood
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Post-develop inspection for defect control by using the Lasertec 9MD83SRII system
Author(s): Andrew Wang; Wayne P. Shen; T. Nakashima; Kaku Ozawa
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When calibration is not enough
Author(s): Jeffrey R. Kingsley; Leslie Johnson
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Measurement error revisited
Author(s): Robert K. Henderson
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Line-width uniformity verification for 0.18-um and below design rule reticles
Author(s): TaiSheng Tan; Shen Chung Kuo; Wayne P. Shen; Nathan Schumann; Clare Wu
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Comparison study of mask error effects for various mask-making processes
Author(s): Tae-Seung Eom; Ikboum Hur; Youngmo Koo; Ki-Ho Baik; Il-Hyun Choi; Do Yun Kim; Chul Shin
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Using linear programming to improve the determination of photomask magnification and orthogonality corrections
Author(s): Mark D. Cerio
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Defect printability measurement on the KLA-351: correlation to defect sizing using the AVI metrology system
Author(s): Peter Fiekowsky; Daniel Selassie
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Damage control during dry etching of EUV mask: I. Control of surface roughness
Author(s): Eiichi Hoshino; Taro Ogawa; Masashi Takahashi; Hiromasa Hoko; Hiromasa Yamanashi; Naoya Hirano; Shinji Okazaki
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Options for at-wavelength inspection of patterned extreme ultraviolet lithography masks
Author(s): Edita Tejnil; Alan R. Stivers
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Next-generation lithography mask development at the NGL Mask Center of Competency
Author(s): Michael J. Lercel; Cameron J. Brooks; Kenneth C. Racette; Christopher Magg; Mark Lawliss; Neal Caldwell; Raymond Jeffer; Kevin W. Collins; Monica Barrett; Steven C. Nash; Michael J. Trybendis; Lucien Bouchard
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Cross-correlation between actinic and visible defect inspection tool for extreme ultraviolet lithography
Author(s): Seongtae Jeong; Chih-wei Lai; Senajith Rekawa; Christopher C. Walton; Shon T. Prisbrey; Jeffrey Bokor
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Placement measurement and FE modeling results for distortion control of stencil masks
Author(s): Albrecht Ehrmann; Thomas Struck; Rainer Kaesmaier; Ernst Haugeneder; Hans Loeschner; Joerg Butschke; Florian Letzkus; Mathias Irmscher; Reinhard Springer; Roxann L. Engelstad
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CD measurements of IPL stencil masks with optical microscopes
Author(s): Arne Bentfeldt; Albrecht Ehrmann; Thomas Schaetz; Thomas Struck
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Use of programmed multilayer defects in validating a defect compensation strategy for EUV lithography
Author(s): Avijit K. Ray-Chaudhuri; Gregory Frank Cardinale; Aaron Fisher; Pawitter J. S. Mangat; Ted Liang; Donald W. Sweeney
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Modeling of optical constants of materials comprising photolithographic masks in the VUV
Author(s): Dale A. Harrison; John C. Lam; George G. Li; A. Rahim Forouhi; Giang T. Dao
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Proposed successor to barcode for automated reticle identification
Author(s): Thomas White; Winthrop A. Baylies; Karl Andrew Bernal; John Merva; William Bouvier
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CANARY: a high-sensitivity ESD test reticle design to evaluate potential risks in wafer fabs
Author(s): Andreas Englisch; Kees van Hasselt; Michel Tissier; K. C. Wang
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CD error sensitivity to "sub-killer" defects at k1 near 0.4: II
Author(s): Kent H. Nakagawa; J. Fung Chen; Robert John Socha; Mircea V. Dusa; Thomas L. Laidig; Kurt E. Wampler; Roger F. Caldwell; Douglas J. Van Den Broeke
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New mask blank handling system for the advanced electron-beam writer
Author(s): Shusuke Yoshitake; Kenji Ooki; Ryoichi Hirano; Toru Tojo; Yoji Ogawa; Katsuhito Ogura; Teruaki Yamamoto; Masaki Toriumi; Yoshiaki Tada
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Simulation study and fabrication of high-transmittance attenuated phase-shifting mask
Author(s): Eunah Kim; Seungbum Hong; Seong-Yong Moon; Yong-Hoon Kim; Hee-Sun Yoon; Kwangsoo No
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Evaluation of lens aberrations depending on the transmittance of DUV-attenuated PSM
Author(s): JoHyun Park; Yong-Hoon Kim; Sung-Chul Lim; Kyung Hee Lee; Seong-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn
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Application of phase-edge PSM for narrow logic gate
Author(s): Byeongsoo Kim; Chul-Hong Park; Manhyoung Ryoo; Kyounghee Lee; Hanku Cho; Joo-Tae Moon
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Fabrication process of Cr-based attenuated phase-shift masks for KrF excimer laser lithography
Author(s): Ichiro Kagami; Kiichi Ishikawa; Daichi Kakuta; Hiroichi Kawahira
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Absorbing assist pattern technique (A2PT) for effective sidelobe control for attenuated phase-shifting masks in optical projection lithography
Author(s): Rainer Pforr; Fritz Gans; Juergen Knobloch; Joerg Thiele
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TiSi-nitride-based attenuated phase-shift mask for ArF lithography
Author(s): Sang-Sool Koo; Ikboum Hur; Youngmo Koo; Ki-Ho Baik; Il-Hyun Choi; Lee-Ju Kim; Keuntaek Park; Chul Shin
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Development of ZrSiO attenuated phase-shift mask for ArF excimer laser lithography
Author(s): Nobuhiko Fukuhara; Takashi Haraguchi; Koichiro Kanayama; Tadashi Matsuo; Susumu Takeuchi; Kozue Tomiyama; Tadashi Saga; Yusuke Hattori; Takashi Ooshima; Masao Otaki
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Evaluation of an advanced mask-writing system: II
Author(s): Shinji Kubo; Koji Hiruta; Masao Sugiyama; Takayuki Iwamatsu; Tatsuya Fujisawa; Hiroaki Morimoto
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Optimization of ZEP 7000 writing and development conditions
Author(s): Daniel Courboin; Philippe Gervot; Chantal Gayou; Patrick Montarou
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Advanced mask technology for 230-mm reticle fabrication
Author(s): Koji Hiruta; Shinji Kubo; Takayuki Iwamatsu; Tatsuya Fujisawa; Masao Sugiyama; Hiroaki Morimoto
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Method to devise multiphase complex mask in submicron lithography
Author(s): Xiangang Luo; HanMin Yao
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Cleaning of SCALPEL next-generation lithography masks using PLASMAX, a revolutionary dry cleaning technology
Author(s): John J. Festa; Anthony E. Novembre; Darryl A. Bennett; Richard J. Kasica; Brad Bailey; Myrtle I. Blakey
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Practical technology path to sub-0.10-um process generations via enhanced optical lithography
Author(s): J. Fung Chen; Thomas L. Laidig; Kurt E. Wampler; Roger F. Caldwell; Kent H. Nakagawa; Armin Liebchen
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Practical applications of IDEAL exposure method
Author(s): Masanobu Hasegawa; Kenji Saitoh; Minoru Yoshii; Akiyoshi Suzuki
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Techniques to inspect SCALPEL masks
Author(s): Darren Taylor; William B. Howard; Richard J. Kasica; Reginald C. Farrow; Anthony E. Novembre; Carlos Caminos; Chester S. Knurek
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Comparison of binary mask defect printability analysis using virtual stepper system and aerial image microscope system
Author(s): Khoi A. Phan; Chris A. Spence; S. Dakshina-Murthy; Vidya Bala; Alvina M. Williams; Steve Strener; Richard D. Eandi; Junling Li; Linard Karklin
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Experimental study of mask line edge roughness transfer in DUV and EUV lithography patterning process
Author(s): Pei-yang Yan; Guojing Zhang
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New silica glass for 157-nm lithography
Author(s): Yoshiaki Ikuta; Shinya Kikugawa; T. Kawahara; H. Mishiro; Noriaki Shimodaira; H. Arishima; Shuhei Yoshizawa
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1999 mask industry quality assessment
Author(s): Brian J. Grenon
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Beta test performance of the Leica LWM 250 UV CD measurement tool
Author(s): Robert K. Henderson
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