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Proceedings of SPIE Volume 3741

Lithography for Semiconductor Manufacturing
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Volume Details

Volume Number: 3741
Date Published: 28 April 1999
Softcover: 26 papers (270) pages
ISBN: 9780819432216

Table of Contents
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Millennium maskmaking
Author(s): Andrew C. Hourd
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Alignment performance as a function of chemical mechanical polishing techniques and stepper optimization
Author(s): Bryan Hubbard; Albert H. Liu
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ASM stepper alignment through thick epitaxial silicon films
Author(s): Iain Black
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Recent trends and progress in deep-UV lithography
Author(s): Kurt G. Ronse; Anne-Marie Goethals; Geert Vandenberghe; Mireille Maenhoudt
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Process window overlap for posts and lines and spaces: optimization by resist type, optical settings, and mask bias
Author(s): Michael T. Reilly; Karen Kvam; Jentry Willie
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Challenge of extending optical lithography
Author(s): Keith A. Chivers
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193-nm lithography: new challenges, new worries
Author(s): Martin McCallum; Wolf-Dieter Domke; Jeff D. Byers; David R. Stark
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Advantages of isofocal printing in maskmaking with the ALTA 3500
Author(s): Scott E. Fuller; Mike Pochkowski
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Assessment of a hypothetical road map that extends optical lithography through the 70-nm technology node
Author(s): John S. Petersen; Martin McCallum; Nishrin Kachwala; Robert John Socha; J. Fung Chen; Thomas L. Laidig; Bruce W. Smith; Ronald L. Gordon; Chris A. Mack
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OAI and PSM used in 193-nm microlithography
Author(s): HanMin Yao; Xiangang Luo; Xunan Chen; Feng Boru
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Understanding advanced lithographic materials: challenges and new characterization techniques
Author(s): Patrick Jean Paniez; Benedicte P. Mortini; Severine Gally; Alain Prola; Charles Rosilio; Pierre-Olivier Sassoulas
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New method for determination of the photoresist Dill parameters using spectroscopic ellipsometry
Author(s): Pierre Boher; Christophe Defranoux; Jean-Philippe Piel; Jean-Louis P. Stehle
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New versatile system for characterization of antireflective coatings using combined spectroscopic ellipsometry and grazing x-ray reflectance
Author(s): Pierre Boher; Patrick Evrard; Jean-Louis P. Stehle
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Performance of 193-nm resists based on alicyclic methacrylate and cyclo-olefin systems
Author(s): Munirathna Padmanaban; Michelle M. Cook; Dana L. Durham; Dinesh N. Khanna; Axel Klauck-Jacobs; Joseph E. Oberlander; M. Dalil Rahman; Ralph R. Dammel
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Use of a MEBES tool to manufacture 180-nm reticles
Author(s): Charles A. Sauer
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Direct-write electron beam lithography automatically aligned with optical lithography for device fabrication
Author(s): Grahame C. Rosolen; Warren D. King
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Evaluation of Shipley UV5 resist for electron beam lithography
Author(s): Stephen Thoms; Douglas S. Macintyre; Yifang Chen
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Effect of developer temperature and normality on conventional and chemically amplified photoresist dissolution
Author(s): Chris A. Mack; Mark John Maslow; Jeff D. Byers
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FIRM: a new software tool for calibration of lithography simulation
Author(s): Dietmar Krueger; Christian K. Kalus; Andreas Erdmann; Christoph M. Friedrich; Rainer Kaesmaier; Axel Feike
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Deep-ultraviolet lithography simulator tuning by resist profile matching
Author(s): Xinhui Niu; Nickhil H. Jakatdar; Costas J. Spanos
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Submicron structure image formation by one-pulse intracavity laser processing
Author(s): Vasily V. Valyavko; Vladimir P. Osipov
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Enhanced microlithography using coherent multiple imaging
Author(s): Miklos Erdelyi; Karoly Osvay; Zsolt Bor; William L. Wilson; Michael C. Smayling; Frank K. Tittel
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Best focus shift issues from focusing system of ASML PAS-5000/50 steppers
Author(s): Ming-Huei Tseng; Feng-Liang Lai; Li-Kong Turn
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Effect of reticle manufacturing quality on full chip optical proximity correction
Author(s): Brian Martin; Graham G. Arthur
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Analysis technique for quantifying the effectiveness of optical-proximity-corrected photomasks and its application to defect printability
Author(s): Graham G. Arthur; Brian Martin
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Effect of photoresist contrast on intrafield critical dimensions in sub-half-micron optical lithography
Author(s): Christine Wallace; Brian Martin; Graham G. Arthur
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