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PROCEEDINGS VOLUME 3679

Optical Microlithography XII
Editor(s): Luc Van den Hove
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Volume Details

Volume Number: 3679
Date Published: 26 July 1999
Softcover: 115 papers (1214) pages
ISBN: 9780819431530

Table of Contents
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Practicing extension of 248-nm DUV optical lithography using trim-mask PSM
Author(s): Michael E. Kling; Nigel Cave; Bradley J. Falch; Chong-Cheng Fu; Kent G. Green; Kevin D. Lucas; Bernard J. Roman; Alfred J. Reich; John L. Sturtevant; Ruiqi Tian; Drew R. Russell; Linard Karklin; Yao-Ting Wang
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Effects of phase-shift masks on across-field linewidth control
Author(s): Richard E. Schenker
Show Abstract
Alternating phase-shifted mask for logic gate levels, design, and mask manufacturing
Author(s): Lars W. Liebmann; Ioana C. Graur; William C. Leipold; James M. Oberschmidt; David S. O'Grady; Denis Regaill
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Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask: II. Experimental results
Author(s): Robert John Socha; Xuelong Shi; Ken C. Holman; Mircea V. Dusa; Will Conley; John S. Petersen; J. Fung Chen; Thomas L. Laidig; Kurt E. Wampler; Roger F. Caldwell; M. C. Chu; Chung Jen Su; Kuei-Chun Hung; C. Chen; F. Wang; C. Le; Christophe Pierrat; Bo Su
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Imaging contrast improvement for 160-nm line features using subresolution assist features with binary, six percent ternary attenuated phase-shift mask with process-tuned resist
Author(s): Nishrin Kachwala; John S. Petersen; J. Fung Chen; Mike Canjemi; Martin McCallum
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Application of blazed gratings for determination of equivalent primary azimuthal aberrations
Author(s): Joseph P. Kirk; Christopher J. Progler
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Novel aberration monitor for optical lithography
Author(s): Peter Dirksen; Casper A. H. Juffermans; Rudy J. M. Pellens; Mireille Maenhoudt; Peter De Bisschop
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Mathematical treatment of condenser aberrations and their impact on linewidth control
Author(s): Christof G. Krautschik; Masato Shibuya; Kenny K.H. Toh
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Measurement of effective source shift using a grating-pinhole mask
Author(s): Kazuya Sato; Satoshi Tanaka; Tadahito Fujisawa; Soichi Inoue
Show Abstract
Performance of a phase-shift focus monitor reticle designed for 193-nm use
Author(s): Roderick R. Kunz; M. S. Chan; Scott P. Doran
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Design, reticle, and wafer OPC manufacturability for the 0.18-um lithography generation
Author(s): Kevin D. Lucas; Martin McCallum; Bradley J. Falch; James L. Wood; Franklin D. Kalk; Robert K. Henderson; Drew R. Russell
Show Abstract
Verifying the "correctness" of your optical proximity correction designs
Author(s): Vinod K. Malhotra; Fang Cheng Chang
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Comparison study for sub-150-nm DUV lithography between high-NA KrF and ArF lithography
Author(s): Donggyu Yim; Ki-Sung Kwon; Young-Mog Ham; Ki-Ho Baik
Show Abstract
Illumination condition and mask bias for 0.15-um pattern with KrF and ArF lithography
Author(s): Hiroki Tabuchi; Y. Shichijo; N. Oka; N. Takenaka; K. Iguchi
Show Abstract
Understanding systematic and random CD variations using predictive modeling techniques
Author(s): Donis G. Flagello; Hans van der Laan; Jan B.P. van Schoot; Igor Bouchoms; Bernd Geh
Show Abstract
Variable-threshold resist models for lithography simulation
Author(s): John Randall; Kurt G. Ronse; Thomas Marschner; Anne-Marie Goethals; Monique Ercken
Show Abstract
Matching simulation and experiment for chemically amplified resists
Author(s): Chris A. Mack; Monique Ercken; Myriam Moelants
Show Abstract
Method to budget and optimize total device overlay
Author(s): Christopher J. Progler; Scott J. Bukofsky; Donald C. Wheeler
Show Abstract
High-speed alignment simulator for Nikon steppers
Author(s): Derek P. Coon; Arun A. Aiyer; Henry K. Chau; Hiroshi Ooki
Show Abstract
Characterization of CD control for sub-0.18-um lithographic patterning
Author(s): John L. Sturtevant; John A. Allgair; Chong-Cheng Fu; Kent G. Green; Robert R. Hershey; Michael E. Kling; Lloyd C. Litt; Kevin D. Lucas; Bernard J. Roman; Gary Stanley Seligman; Mike Schippers
Show Abstract
CD control comparison for sub-0.18-um patterning using 248-nm lithography and strong resolution enhancement techniques
Author(s): Geert Vandenberghe; Thomas Marschner; Kurt G. Ronse; Robert John Socha; Mircea V. Dusa
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CD uniformity consideration for DUV step and scan tools
Author(s): Rolf Seltmann; Anna Maria Minvielle; Chris A. Spence; Sven Muehle; Luigi Capodieci; Khanh B. Nguyen
Show Abstract
Mask error factor: causes and implications for process latitude
Author(s): Jan B.P. van Schoot; Jo Finders; Koen van Ingen Schenau; Michel Klaassen; Corine Buijk
Show Abstract
Impact of mask errors on full chip error budgets
Author(s): Franklin M. Schellenberg; Victor V. Boksha; Nicolas B. Cobb; J. C. Lai; C. H. Chen; Chris A. Mack
Show Abstract
193-nm lithography on a full-field scanner
Author(s): Anne-Marie Goethals; Ingrid Pollers; Patrick Jaenen; Frieda Van Roey; Kurt G. Ronse; Barbra Heskamp; Guy Davies
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Feasibility studies of ArF lithography for sub-130-nm lithography
Author(s): Seung-Hyuk Lee; Donggyu Yim; Young-Mog Ham; Ki-Ho Baik; Il-Hyun Choi
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Challenge to sub-0.1-um pattern fabrication using an alternating phase-shifting mask in ArF lithography
Author(s): Takahiro Matsuo; Keisuke Nakazawa; Tohru Ogawa
Show Abstract
Optical extension at the 193-nm wavelength
Author(s): Peter Zandbergen; Martin McCallum; Gilles R. Amblard; Wolf-Dieter Domke; Bruce W. Smith; Lena Zavyalova; John S. Petersen
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Depth of focus enhancement for 193-nm window lithography with subresolution assist features
Author(s): Pat G. Watson; Armen Kroyan; Raymond A. Cirelli; H. L. Maynard; James R. Sweeney; Fred P. Klemens; G. L. Timp; Omkaram Nalamasu
Show Abstract
Variations to the influence of lens aberration invoked with PSM and OAI
Author(s): Bruce W. Smith
Show Abstract
Feasibility of printing 0.1-um technology with optical lithography
Author(s): Mireille Maenhoudt; Staf Verhaegen; Kurt G. Ronse; Donis G. Flagello; Bernd Geh; Winfried M. Kaiser
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Higher-order aberration measurement with printed patterns under extremely reduced sigma illumination
Author(s): Hiroshi Nomura; Kazuo Tawarayama; Takuya Kohno
Show Abstract
Flare impact on the intrafield CD control for sub-0.25-um patterning
Author(s): Emmanuelle Luce; Blandine Minghetti; Patrick Schiavone; Olivier Toublan; Andre P. Weill
Show Abstract
Effect of negative-tone mask lithography on lens aberration phenomena
Author(s): Kouichirou Tsujita; Yuuji Yamauchi; Atsushi Ueno; Wataru Wakamiya; Tadashi Nishimura
Show Abstract
Multilevel imaging system realizing k1=0.3 lithography
Author(s): Akiyoshi Suzuki; Kenji Saitoh; Minoru Yoshii
Show Abstract
Resolution and DOF improvement through the use of square-shaped illumination
Author(s): Bruce W. Smith; Lena Zavyalova; S. G. Smith; John S. Petersen
Show Abstract
Assessment of synchronous filtering as an alternative to phase-shifting masks at k1=0.4
Author(s): Andrew R. Neureuther; Meng Li
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Customized off-axis illumination aperture filtering for sub-0.18-um KrF lithography
Author(s): Chin Chiu Hsia; Tsai-Sheng Gau; Chuen-Huei Yang; Ru-Gun Liu; ChungHsing Chang; Li-Jui Chen; Chien-Ming Wang; J. Fung Chen; Bruce W. Smith; Gue-Wuu Hwang; JiannWen Lay; Dong-Yuan Goang
Show Abstract
Combination of OPC and AttPSM for patterning sub-0.18-um logic devices
Author(s): Hung Jui Kuo; Chia-Hui Lin; San-De Tzu; Anthony Yen
Show Abstract
0.7-NA DUV step-and-scan system for 150-nm imaging with improved overlay
Author(s): Jan B.P. van Schoot; Frank Bornebroek; Manfred Suddendorf; Melchior Mulder; Jeroen van der Spek; Jan Stoeten; Adolph Hunter; Peter Ruemmer
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New technique for optical lithography at low k-factors
Author(s): Harry Sewell; Andrew W. McCullough; John E. Lauria; Keith W. Andresen
Show Abstract
150-nm generation lithography equipment
Author(s): Nobuyoshi Deguchi; Shigeyuki Uzawa
Show Abstract
Performance of 300-mm lithography tools in a pilot production line
Author(s): John G. Maltabes; Alain B. Charles; Steffen R. Hornig; Thorsten Schedel; Dietmar Ganz; Sebastian Schmidt
Show Abstract
Watt-level DUV generation by solid state laser for lithography
Author(s): Yasu Ohsako; Jun Sakuma; Andrew Finch; Kyoichi Deki; Masahiro Horiguchi; Toshio Yokota
Show Abstract
ArF step-and-scan exposure system for 0.15-um and 0.13-um technology nodes
Author(s): Jan Mulkens; Judon M. D. Stoeldraijer; Guy Davies; Marcel Dierichs; Barbra Heskamp; Marco H. P. Moers; Richard A. George; Oliver Roempp; Holger Glatzel; Christian Wagner; Ingrid Pollers; Patrick Jaenen
Show Abstract
Performance of the ArF scanning exposure tool
Author(s): Susumu Mori
Show Abstract
Impact of pellicle damage on patterning characteristics in ArF lithography
Author(s): Junji Miyazaki; Masaya Uematsu; Tohru Ogawa
Show Abstract
Revisiting F2 laser for DUV microlithography
Author(s): Thomas Hofmann; Jean-Marc Hueber; Palash P. Das; Scott Scholler
Show Abstract
Integration of alternating phase-shift mask technology into optical proximity correction
Author(s): Joerg Thiele; Christoph M. Friedrich; Christoph Dolainsky; Paul Karakatsanis; Wilhelm Maurer
Show Abstract
Alternating PSM optimization using model-based OPC
Author(s): Alexander V. Tritchkov; John P. Stirniman; Michael L. Rieger
Show Abstract
Pattern asymmetries in phase-edge imaging
Author(s): Michael Fritze; Susan G. Cann; Peter W. Wyatt
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Clear-field alternating PSM for 193-nm lithography
Author(s): Patrick Schiavone; Frederic P. Lalanne; Alain Prola
Show Abstract
Evaluating the potential of alternating phase-shift masks using lithography simulation
Author(s): Christoph M. Friedrich; Klaus Ergenzinger; Fritz Gans; Andreas Grassmann; Uwe A. Griesinger; Juergen Knobloch; Leonhard Mader; Wilhelm Maurer; Rainer Pforr
Show Abstract
Full-depth optical proximity correction (FD-OPC) based on E-D forest
Author(s): Burn Jeng Lin; Peter Young
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Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-um mask pattern
Author(s): Yong-Ho Oh; Jai-Cheol Lee; Sungwoo Lim
Show Abstract
Hierarchical processing for accurate optical proximity correction for 1-Gb DRAM metal layers
Author(s): Sachiko Kobayashi; Taiga Uno; Kazuko Yamamoto; Satoshi Tanaka; Toshiya Kotani; Soichi Inoue; Hitoshi Higurashi; Susumu Watanabe; Mitsuhiro Yano; Sinichiro Ohki; Kiyoshi Tsunakawa
Show Abstract
Systematic approach to correct critical patterns induced by the lithography process at the full-chip level
Author(s): Chul-Hong Park; Yoo-Hyon Kim; Ji-Soong Park; Kwan-Do Kim; Moon-Hyun Yoo; Jeong-Taek Kong
Show Abstract
Effects of subresolution assist features on depth of focus and uniformity of contact windows for 193-nm lithography
Author(s): Armen Kroyan; Pat G. Watson; Raymond A. Cirelli; Omkaram Nalamasu; Frank K. Tittel
Show Abstract
Application of a new approach to optical proximity correction
Author(s): Anja Rosenbusch; Andrew C. Hourd; Casper A. H. Juffermans; Hartmut Kirsch; Frederic P. Lalanne; Wilhelm Maurer; Carmelo Romeo; Kurt G. Ronse; Patrick Schiavone; Michal Simecek; Olivier Toublan; Tom Vermeulen; John G. Watson; Wolfram Ziegler; Rainer Zimmermann
Show Abstract
Optical proximity correction considering process latitude
Author(s): Akio Misaka; Shinji Odanaka
Show Abstract
Development of a lithographic DRC technique for interactive use and batch processing
Author(s): Hiroki Futatsuya; Tatsuo Chijimatsu; Satoru Asai; Isamu Hanyu
Show Abstract
Practical methodology of optical proximity correction in subquarter-micron lithography
Author(s): Chang-Moon Lim; Jae-Wook Seo; Chun-Soo Kang; Young-Soo Park; Jong-Tai Yoon; Chul-Seung Lee; Seung-Chan Moon; Bong-Ho Kim
Show Abstract
Automatic parallel optical proximity correction system for application with hierarchical data structure
Author(s): Eiji Tsujimoto; Takahiro Watanabe; Kyoji Nakajo
Show Abstract
Optical proximity correction for submicron lithography by laser direct writing
Author(s): Yongkang Guo; Jinglei Du; Qizhong Huang; Jun Yao; Chuankai Qiu; Zheng Cui
Show Abstract
Reduction of isolated-dense bias by optimization off-axis illumination for 150-nm lithography using KrF
Author(s): Seok-Kyun Kim; Chang-Nam Ahn; Seo-Min Kim; Young-Mog Ham; Ki-Ho Baik
Show Abstract
Illuminator optimization for projection printing
Author(s): Eytan Barouch; Steven L. Knodle; Steven A. Orszag; Michael S. Yeung
Show Abstract
New technology for enhancing depth of focus using birefringent material
Author(s): Dohoon Kim; Hai Bin Chung; Kyoung Ik Cho; Dae Yong Kim
Show Abstract
Spatial frequency analysis of optical lithography resolution enhancement techniques
Author(s): Steven R. J. Brueck; Xiaolan Chen
Show Abstract
Process issues of sub-0.20-um contact hole patterns for logic devices and DRAM
Author(s): Hyun-Jo Yang; Jin Young Yoon; Goo-Min Jeong; Hoon Huh; Jaejeong Kim
Show Abstract
Experimental comparison of off-axis illumination and imaging interferometric lithography
Author(s): Xiaolan Chen; Steven R. J. Brueck
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New mask having functions of OAI and PSM to realize sub-0.2-um patterns with 248 nm in microlithography
Author(s): Xiangang Luo; HanMin Yao; Xunan Chen; Feng Boru
Show Abstract
Off-axis illumination for improving depth of focus for isolated features
Author(s): James G. Tsacoyeanes
Show Abstract
Coherent multiple imaging by means of pupil plane filtering
Author(s): Miklos Erdelyi; Armen Kroyan; Karoly Osvay; Zsolt Bor; William L. Wilson; Michael C. Smayling; Frank K. Tittel
Show Abstract
Study of the impact to image quality and overlay by different pupil fills in a DUV scanner via overlay metrology
Author(s): Kafai Lai; Pedro Tasaico; Theodore G. Doros; Dan W. Holladay
Show Abstract
Study of pupil filters for depth of focus enhancement in printing contact holes
Author(s): Chun-Ming Albert Wang; Shinn Sheng Yu; Anthony Yen
Show Abstract
Design of illumination aperture for ArF exposure system with wide exposing latitude
Author(s): Sang-Soo Choi; Han-Sun Cha; Jong-Soo Kim; Kag Hyeon Lee; Dohoon Kim; Hai Bin Chung; Dae Yong Kim
Show Abstract
DOF improvement by complex pupil filtering for DUV lithography
Author(s): Piotr Jedrasik
Show Abstract
Optimization of attenuated phase-shift mask for contact hole printing
Author(s): Yung-Tin Chen; Ya-Chih Wang; Ronfu Chu
Show Abstract
Effect of mask critical dimension error for subquarter-micron contact hole
Author(s): Hung-Eil Kim; Jun-Sung Chun; Stanley Barnett; James Shih
Show Abstract
Lithographic implications for Cu/low-k integration
Author(s): Rebecca D. Mih; Nora Chen; Kenneth R. Jantzen; James T. Marsh; Steven Schneider
Show Abstract
Approach to pattern aspect ratio control
Author(s): Alan C. Thomas; Franz X. Zach; Alfred K. K. Wong; Richard A. Ferguson; Donald J. Samuels; Rosemary Longo; John Zhu; Christopher Feild
Show Abstract
Optimization criteria for SRAM design: lithography contribution
Author(s): Daniel C. Cole; Orest Bula; Edward W. Conrad; Daniel S. Coops; William C. Leipold; Randy W. Mann; Jeffrey H. Oppold
Show Abstract
Challenge to 0.13-um device patterning using KrF
Author(s): Insung Kim; Junghyun Lee; DongHo Cha; Joonsoo Park; Hanku Cho; Joo-Tae Moon
Show Abstract
Intrawafer CD control in state-of-the-art lithography
Author(s): Ivan K.A. Pollentier; Christiaan Baert; Thomas Marschner; Kurt G. Ronse; Grozdan Grozev; Mario Reybrouck
Show Abstract
New trends in Brunner's relation: dielectric levels
Author(s): Yorick Trouiller; Anne Didiergeorges; Gilles L. Fanget; Cyrille Laviron; Corinne Comboure; Yves Quere
Show Abstract
Optimization of substrate reflectivity, resist thickness, and resist absorption for CD control and resolution
Author(s): Johannes van Wingerden
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Extending the limits of i-line lithography for via layers and minimization of dense-iso bias
Author(s): Ramkumar Subramanian; Chris A. Spence; Luigi Capodieci; Thomas Werner; Ernesto Gallardo
Show Abstract
Antireflection strategies for sub-0.18-um dual-damascene structure patterning in KrF 248-nm lithography
Author(s): Shuo-Yen Chou; Chien-Ming Wang; Chin Chiu Hsia; Li-Jui Chen; Gue-Wuu Hwang; Shyh-Dar Lee; Jen-Chung Lou
Show Abstract
Comparison of CD variation between organic and inorganic bottom antireflective coating on topographic substrates
Author(s): Satoko Nakaoka; Hisashi Watanabe; Yoshimitsu Okuda
Show Abstract
0.18-um lithography strategies: 248-nm DUV step-and-scanner and advanced chemical amplified resist
Author(s): Qunying Lin; Alex Tsun-Lung Cheng; Wei Wen Ma; John J.J. Cheng
Show Abstract
New application of negative DUV resist for topographical metal layer microlithography
Author(s): Yung-Tin Chen; Ronfu Chu
Show Abstract
Effect of exposure tool illumination settings and objective numerical aperture on the standing wave period within photoresist
Author(s): Stewart A. Robertson; Frank T.G.M. Linskens; Charles R. Szmanda; Kevin J. Dempsey
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0.18-um technology at contact level: deep-UV process development by tuning NA/o and using a bottom antireflective coating
Author(s): Gilles R. Amblard; Jean-Paul E. Chollet
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ARC technology to minimize CD variations during emitter structuring: experiment and simulation
Author(s): Joachim J. Bauer; G. Drescher; Ulrich A. Jagdhold; Ulrich Haak; T. Skaloud
Show Abstract
Advanced resist coating technology for mask manufacturing process
Author(s): Yasuyuki Kushida; Youichi Usui; Toru Kobayashi; Kazumasa Shigematsu
Show Abstract
Quality and performance of late Ga+ ion FIB mask repair with the gas assist in DUV process
Author(s): Sang-Man Bae; Youngmo Koo; Kwang-Yoon Ko; Bong-Ho Kim; Dong-Jun Ahn
Show Abstract
Characterizing absorption and total scattering losses on optical components for 193-nm wafer steppers
Author(s): Klaus R. Mann; Oliver Apel; Eric Eva
Show Abstract
Performance characteristics of ultranarrow ArF laser for DUV lithography
Author(s): Alexander I. Ershov; Herve Besaucele; Palash P. Das
Show Abstract
Production-ready 2-kHz KrF excimer laser for DUV lithography
Author(s): Dave Myers; Tom A. Watson; Palash P. Das; Gunasiri G. Padmabandu; Paolo Zambon; Thomas Hofmann; William N. Partlo; Christopher Hysham; Richard Dunning
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High-repetition-rate excimer lasers for DUV lithography
Author(s): Uwe Stamm; Rainer Paetzel; Igor Bragin; Vincent Berger; Ingo Klaft; Juergen Kleinschmidt; Rustem Osmanov; Thomas Schroeder; Klaus Vogler; Wolfgang Zschocke; Dirk Basting
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Billion-level durable ArF excimer laser with highly stable energy
Author(s): Osamu Wakabayashi; Tatsuo Enami; Takeshi Ohta; Hirokazu Tanaka; Hirokazu Kubo; Toru Suzuki; Katsutomo Terashima; Akira Sumitani; Hakaru Mizoguchi
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Line-narrowed ArF excimer laser for 193-nm lithography
Author(s): Takashi Saito; Ken-ichi Mitsuhashi; Motohiro Arai; Kyouhei Seki; Akifumi Tada; Tatsushi Igarashi; Kazuaki Hotta
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Performance of a highly stable 2-kHz operation KrF laser
Author(s): Tatsuo Enami; Masaki Nakano; Takayuki Watanabe; Ayako Ohbo; Tsukasa Hori; Takashi Ito; Toshihiro Nishisaka; Akira Sumitani; Osamu Wakabayashi; Hakaru Mizoguchi; Hiroaki Nakarai; Naoto Hisanaga; Takeshi Matsunaga; Hirokazu Tanaka; Tatsuya Ariga; Syouich Sakanishi; Takeshi Okamoto; Ryoichi Nodomi; Takashi Suzuki; Yuichi Takabayashi; Hitoshi Tomaru; Kiyoharu Nakao
Show Abstract
Silicon-oxynitride films prepared for 157-nm attenuated phase-shifting masks
Author(s): Hsuen-Li Chen; Lon A. Wang; L. S. Yeh; F. D. Lai
Show Abstract
Application of the hybrid finite-difference time-domain method to modeling curved surfaces in three-dimensional lithography simulation
Author(s): Michael S. Yeung; Eytan Barouch
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Effect of 3D diffusion on photolithographic simulation results
Author(s): Steven G. Hansen
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Method for choosing "generic" photoresist simulation parameters
Author(s): Steven G. Hansen
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Excimer-laser-induced absorption in fused silica
Author(s): Johannes Moll; Paul M. Schermerhorn
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Studies of nitride- and oxide-based materials as absorptive shifters for embedded attenuated phase-shifting mask in 193 nm
Author(s): Cheng-ming Lin; Keh-wen Chang; Ming-der Lee; Wen-An Loong
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Optimization of a mix-and-match fab: noninteger nonconcentric field overlay
Author(s): Mark E. Notarfrancesco; Paul T. Herrington; Joseph Pelligrini
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Measurement of pitch dependency of overlay errors under OAI by using an electric CD measurement technique
Author(s): Nakgeuon Seong; Hochul Kim; Hanku Cho; Joo-Tae Moon; Sang Min Lee
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Long-term 193-nm laser-induced degradation of fused silica and calcium fluoride
Author(s): Vladimir Liberman; Mordechai Rothschild; Jan H. C. Sedlacek; Ray S. Uttaro; Allen Keith Bates; Chris K. Van Peski
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Index of refraction and its temperature dependence of calcium fluoride near 157 nm
Author(s): John H. Burnett; Rajeev Gupta; Ulf Griesmann; Ted E. Jou
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Synergistic evolution to production-worthy 30-nm lithography
Author(s): Daniel R. Cote; James A. McClay; Noreen Harned
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Business dynamics of lithography at very low k1 factors
Author(s): Sam Harrell; Moshe E. Preil
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