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Proceedings of SPIE Volume 3678

Advances in Resist Technology and Processing XVI
Editor(s): Will Conley
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Volume Details

Volume Number: 3678
Date Published: 11 June 1999
Softcover: 138 papers (1438) pages
ISBN: 9780819431523

Table of Contents
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Chemically amplified resists: past, present, and future
Author(s): Hiroshi Ito
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Outlook for 157-nm resist design
Author(s): Roderick R. Kunz; Theodore M. Bloomstein; D. E. Hardy; Russell B. Goodman; Deanna K. Downs; Jane E. Curtin
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Development of an incremental structural parameter model for predicting reactive ion etch rates of 193-nm photoresist polymer platforms
Author(s): Thomas I. Wallow; Phillip J. Brock; Richard A. Di Pietro; Robert D. Allen; Juliann Opitz; Ratnam Sooriyakumaran; Donald C. Hofer; Ann Marie Mewherter; Yuping Cui; Wendy Yan; G. Worth; Wayne M. Moreau; Jeff Meute; Jeff D. Byers; Georgia K. Rich; Martin McCallum; Saikumar Jayaraman; Richard Vicari; Joy Cagle; Shenliang Sun; Karen A. Hullihen
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New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins
Author(s): Ilya L. Rushkin; Francis M. Houlihan; Janet M. Kometani; Richard S. Hutton; Allen G. Timko; Elsa Reichmanis; Omkaram Nalamasu; Allen H. Gabor; Arturo N. Medina; Sydney G. Slater; Mark O. Neisser
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Design and development of high-performance 193-nm positive resist based on functionalized poly(cyclicolefins)
Author(s): Pushkara Rao Varanasi; J. Maniscalco; Ann Marie Mewherter; Margaret C. Lawson; George M. Jordhamo; Robert D. Allen; Juliann Opitz; Hiroshi Ito; Thomas I. Wallow; Donald C. Hofer; Leah Langsdorf; Saikumar Jayaraman; Richard Vicari
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Approaches to etch-resistant 193-nm photoresists: performance and prospects
Author(s): Robert D. Allen; Juliann Opitz; Hiroshi Ito; Thomas I. Wallow; Daniel V. Casmier; Richard A. Di Pietro; Phillip J. Brock; Gregory Breyta; Ratnam Sooriyakumaran; Carl E. Larson; Donald C. Hofer; Pushkara Rao Varanasi; Ann Marie Mewherter; Saikumar Jayaraman; Richard Vicari; Larry F. Rhodes; Shenliang Sun
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Block copolymers as additives: a route to enhanced resist performance
Author(s): Narayan Sundararajan; Kenji Ogino; Suresh Valiyaveettil; Jianguo Wang; Shu Yang; Atsushi Kameyama; Christopher Kemper Ober; Robert D. Allen; Jeff D. Byers
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Model study by FT-IR of the interaction of select cholate dissolution inhibitors with poly(norbornene-alt-maleic anhydride) and its derivatives
Author(s): Gary Dabbagh; Francis M. Houlihan; Ilya Rushkin; Richard S. Hutton; Omkaram Nalamasu; Elsa Reichmanis; Allen H. Gabor; Arturo N. Medina
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Carbon-rich cyclopolymers: their synthesis, etch resistance, and application to 193-nm microlithography
Author(s): Dario Pasini; Eric Low; Robert P. Meagley; Jean M. J. Frechet; C. Grant Willson; Jeff D. Byers
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NMR analysis of chemically amplified resist films
Author(s): Hiroshi Ito; Mark Sherwood
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Physico-chemical properties of polymers for 193-nm lithography incorporating alicyclic norbornene-alt-maleic anhydride structures
Author(s): Patrick Jean Paniez; Franck Perrier; Benedicte P. Mortini; Severine Gally; Pierre-Olivier Sassoulas; Charles Rosilio
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New method for determination of the photoresist Dill parameters using spectroscopic ellipsometry
Author(s): Pierre Boher; Christophe Defranoux; Jean-Philippe Piel; Jean-Louis P. Stehle
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Experimental method for quantifying acid diffusion in chemically amplified resists
Author(s): Gregory M. Wallraff; William D. Hinsberg; Frances A. Houle; Mons D. Morrison; Carl E. Larson; Martha I. Sanchez; John A. Hoffnagle; Phillip J. Brock; Gregory Breyta
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Electrical property study of line-edge roughness in top surface imaging process by silylation
Author(s): Myoung-Soo Kim; Hyoung-Gi Kim; Seung Ho Pyi; Hyeong-Soo Kim; Ki-Ho Baik; Il-Hyun Choi
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Aerial image contrast using interferometric lithography: effect on line-edge roughness
Author(s): Martha I. Sanchez; William D. Hinsberg; Frances A. Houle; John A. Hoffnagle; Hiroshi Ito; Cattien V. Nguyen
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Methacrylate resists and antireflective coatings for 193-nm lithography
Author(s): Gary N. Taylor; Peter Trefonas; Charles R. Szmanda; George G. Barclay; Robert J. Kavanagh; Robert F. Blacksmith; Lori Anne Joesten; Michael J. Monaghan; Suzanne Coley; Zhibiao Mao; James F. Cameron; Ricky Hardy; Dana Gronbeck; S. Connolly
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Dual-layer inorganic SiON bottom ARC for 0.25-um DUV hard mask applications
Author(s): Qunying Lin; Alex Cheng; John L. Sudijono; Charles Lin
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Suppression of resist pattern deformation on SiON bottom antireflective layer in deep-UV lithography
Author(s): Ryoko Yamanaka; Takashi Hattori; Toshiyuki Mine; Keiko T. Hattori; Toshihiko P. Tanaka; Tsuneo Terasawa
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Application of polysilanes for deep-UV antireflective coating
Author(s): Yasunobu Onishi; Yasuhiko Sato; Eishi Shiobara; Seiro Miyoshi; Hideto Matsuyama; Junko Abe; Hideo Ichinose; Tokuhisa Ohiwa; Yoshihiko Nakano; Sawako Yoshikawa; Shuzi Hayase
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Novel silicon-containing resists for EUV and 193-nm lithography
Author(s): Carl R. Kessel; Larry D. Boardman; Steven J. Rhyner; Jonathan L. Cobb; Craig C. Henderson; Veena Rao; Uzodinma Okoroanyanwu
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Optimization of 193-nm single-layer resists through statistical design
Author(s): Allen H. Gabor; Ognian N. Dimov; Arturo N. Medina; Mark O. Neisser; Sydney G. Slater; Ruey H. Wang; Francis M. Houlihan; Raymond A. Cirelli; Gary Dabbagh; Richard S. Hutton; Ilya L. Rushkin; James R. Sweeney; Allen G. Timko; Omkaram Nalamasu; Elsa Reichmanis
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Novel 193-nm single-layer resist containing a multifunctional monomer
Author(s): Geunsu Lee; Cha-Won Koh; Jae Chang Jung; Min-Ho Jung; Hyeong-Soo Kim; Ki-Ho Baik; Il-Hyun Choi
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High-resolution 248-nm bilayer resist
Author(s): Qinghuang Lin; Karen E. Petrillo; Katherina Babich; Douglas C. LaTulipe; David R. Medeiros; Arpan P. Mahorowala; John P. Simons; Marie Angelopoulos; Gregory M. Wallraff; Carl E. Larson; Debra Fenzel-Alexander; Ratnam Sooriyakumaran; Gregory Breyta; Phillip J. Brock; Richard A. Di Pietro; Donald C. Hofer
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Bilayer silylation process for 193-nm lithography
Author(s): Isao Satou; Koichi Kuhara; Masayuki Endo; Hiroaki Morimoto
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Resist outgassing as a function of differing photoadditives
Author(s): Francis M. Houlihan; Ilya L. Rushkin; Richard S. Hutton; Allen G. Timko; Omkaram Nalamasu; Elsa Reichmanis; Allen H. Gabor; Arturo N. Medina; Sanjay Malik; M. Neiser; Roderick R. Kunz; Deanna K. Downs
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Physical modeling of deprotection-induced thickness loss
Author(s): Nickhil H. Jakatdar; Junwei Bao; Costas J. Spanos; Ramkumar Subramanian; Bharath Rangarajan
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Structural design of new alicyclic acrylate polymers with androstane moiety for 193-nm resist
Author(s): Toshiaki Aoai; Kenichiro Sato; Kunihiko Kodama; Yasumasa Kawabe; Hajime Nakao; Morio Yagihara
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Toward the ultimate storage device: the fabrication of an ultrahigh-density memory device with 193-nm lithography
Author(s): Raymond A. Cirelli; J. Bude; William M. Mansfield; G. L. Timp; Fred P. Klemens; Pat G. Watson; Gary R. Weber; James R. Sweeney; Francis M. Houlihan; Allen H. Gabor; Fred Baumann; M. Buonanno; G. F. Forsyth; D. Barr; T. C. Lee; C. S. Rafferty; Richard S. Hutton; Allen G. Timko; J. Hergenrother; Elsa Reichmanis; Lloyd R. Harriott; S. J. Hillenius; Omkaram Nalamasu
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Effects of polymer structure on dissolution characteristics in chemically amplified 193-nm resists
Author(s): Toshiro Itani; Hiroshi Yoshino; Masaharu Takizawa; Mitsuharu Yamana; Hiroyoshi Tanabe; Kunihiko Kasama
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Correlations between dissolution data and lithography of various resists
Author(s): Ronald DellaGuardia; Wu-Song Huang; K. Rex Chen; Doris Kang
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Progress of a CVD-based photoresist 193-nm lithography process
Author(s): Carol Y. Lee; Dian Sugiarto; Ling Liao; David Mui; Timothy W. Weidman; Michael P. Nault; Tony Tryba
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Considerations for the use of application-specific photoresists
Author(s): John L. Sturtevant; Benjamin C. P. Ho; Kevin D. Lucas; John S. Petersen; Chris A. Mack; Edward W. Charrier; William C. Peterson; Nobu Koshiba; Gregg A. Barnes
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Edge lithography as a means of extending the limits of optical and nonoptical lithographic resolution
Author(s): Steven J. Holmes; Toshiharu Furukawa; Mark C. Hakey; David V. Horak; Paul A. Rabidoux; K. Rex Chen; Wu-Song Huang; Mahmoud Khojasteh; Niranjan Patel
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Mechanism of the Trefonas effect (polyphotolysis) in dissolution inhibition resists
Author(s): Yu-Kai Han; Arnost Reiser
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Analysis of molecular diffusion in resist polymer films simulated by molecular dynamics
Author(s): Minoru Toriumi; Takeshi Ohfuji; Masayuki Endo; Hiroaki Morimoto
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Effect of photoacid generators on the formation of residues in an organic BARC process
Author(s): Koji Shimomura; Yoshimitsu Okuda; Hiroshi Okazaki; Yoshiaki Kinoshita; Georg Pawlowski
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Lithographic properties of novel acetal-derivatized hydroxy styrene polymers
Author(s): Sanjay Malik; Andrew J. Blakeney; Lawrence Ferreira; Brian Maxwell; Allyn Whewell; Thomas R. Sarubbi; Murrae J. Bowden; Veerle Van Driessche; Toru Fujimori; Shiro Tan; Toshiaki Aoai; Kazuya Uenishi; Yasumasa Kawabe; Tadayoshi Kokubo
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Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification
Author(s): Takashi Hattori; Yuko Tsuchiya; Yoshiyuki Yokoyama; Hiroaki Oizumi; Taku Morisawa; Atsuko Yamaguchi; Hiroshi Shiraishi
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Chemically amplified resist based on the methacrylate polymer with 2-trimethylsilyl-2-propyl ester protecting group
Author(s): Jin-Baek Kim; Hyun-Woo Kim; Si-Hyeung Lee; Sang-Jun Choi; Joo-Tae Moon
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Characterization and lithographic parameter extraction for the modified resists
Author(s): Fu-Hsiang Ko; June-Kuen Lu; Tien-Chi Chu; Tiao-Yuan Huang; ChinCheng Yang; Jinn-Tsair Sheu; Hui-Ling Huang
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Reactivity determination of carbon atoms on benzene rings of phenols
Author(s): Jiangnan Gu; Xiao Tong; Yingquan Zou; Shaoren He; Shangxian Yu
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Developer concentration influence on DUV process
Author(s): Tsu-Yu Chu; Kun-Pi Cheng
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Chemically amplified negative resist optimized for high-resolution x-ray lithography
Author(s): Jiro Nakamura; Yoshio Kawai; Kimiyoshi Deguchi; Masatoshi Oda; Tadahito Matsuda
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Photoresist silylation and "swelling": simulation using finite element analysis and physical boundary movement algorithms
Author(s): Arousian Arshak; Thomas J. Kinsella; Declan McDonagh
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Process characterization of 100-um-thick photoresist films
Author(s): Warren W. Flack; Sylvia White; Bradley Todd
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Controlled developing time for higher-resolution i-line photoresist
Author(s): Yutaka Saito; Tatsuya Yamada; Kunio Itoh
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Contrast enhancement by alkali decomposable additives in chemically amplified negative i-line resists
Author(s): Yasunori Uetani; Hiroshi Moriuma; Yuko Hirai; Yoshiyuki Takata; Airi Yamada
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Positive ArF resist with 2EAdMA/GBLMA resin system
Author(s): Yasunori Uetani; Hiroaki Fujishima; Kaoru Araki; Kazuhisa Endo; Ichiki Takemoto
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Design of a new bottom antireflective coating composition for KrF resist
Author(s): Kazuyoshi Mizutani; Makoto Momota; Toshiaki Aoai; Morio Yagihara
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Optimizing a DUV positive resist for metal layers
Author(s): Sanjay Malik; Brian Maxwell; Anna Gandolfi; Alberto Ornaghi; Allyn Whewell; Kenneth Uhnak; Stefano Volpi; Veerle Van Driessche; Thomas R. Sarubbi; Steven G. Hansen; Murrae J. Bowden
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Acid diffusion and evaporation in chemically amplified resists
Author(s): Jin-Baek Kim; Young-Gil Kwon; Jae-Hak Choi; Min-Ho Jung
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Toward individually addressable nanometer-size surface pixels: ultrathin dendrimer films as resists for scanning probe lithography
Author(s): David C. Tully; Alexander R. Trimble; Jean M. J. Frechet; Kathryn Guarini; Calvin F. Quate
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Bottom antireflective coatings for ArF, KrF, and i-line applications: a comparison of theory, design, and lithographic aspects
Author(s): Munirathna Padmanaban; Shuji Ding; Stanley A. Ficner; Wen-Bing Kang; Dinesh N. Khanna; Ralph R. Dammel
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Chemical aspects of silicon-containing bilayer resists
Author(s): Larry D. Boardman; Carl R. Kessel; Steven J. Rhyner
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Comparison of measured sidewall roughness for positive-tone chemically amplified resists exposed by x-ray lithography
Author(s): Geoffrey W. Reynolds; James Welch Taylor
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Chemically amplified resists using the absorption band shift method in conjunction with alicyclic compounds for ArF excimer laser lithography
Author(s): Takeshi Okino; Koji Asakawa; Naomi Shida; Tohru Ushirogouchi
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Novel e-beam resist with alicyclic olefin moieties for high etch selectivity
Author(s): Sung-Eun Hong; Chi-Hyeong Roh; Jae Chang Jung; Min-Ho Jung; Hyeong-Soo Kim; Ki-Ho Baik
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Protein patterning using bilayer lithography and confocal microscopy
Author(s): Dan V. Nicolau; Robert A. Cross; Nick Carter; Takahisa Taguchi
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Design of acid labile protecting groups in chemically amplified resists
Author(s): Jun Fujita; Koshi Sasaki; Yasuhiro Kameyama; Yuzuru Chika; Takeshi Kashiwagi; Takaaki Niinomi; Yuki Tanaka; Shinji Tarutani; Tameichi Ochiai
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Line-edge roughness characterized by polymer aggregates in photoresists
Author(s): Toru Yamaguchi; Hideo Namatsu; Masao Nagase; Kenji Kurihara; Yoshio Kawai
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Chemically amplified resists based on acrylate polymers containing ketal groups in the side chains
Author(s): Jin-Baek Kim; Jong Jin Park; Ji Hyun Jang; Jae-Young Kim
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Spin-coatable Al2O3 resists in electron-beam nanolithography
Author(s): Mohammad S.M. Saifullah; Hideo Namatsu; Toru Yamaguchi; Kenji Yamazaki; Kenji Kurihara
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Refractive index change during exposure for 193-nm chemically amplified resists
Author(s): Hye-Keun Oh; Young-Soo Sohn; Moon-Gyu Sung; Young-Mi Lee; Eun-Mi Lee; Sung Hwan Byun; Ilsin An; Kun-Sang Lee; In-Ho Park
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Chemistry of photoresist recycling: II
Author(s): Hideki Nishida; Masamichi Moriya; Itaru Shiiba; Katsuto Taniguchi
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New photoresist stripper and a system for recycling it
Author(s): Hideki Nishida; Hiroshi Kikuchi; Kensuke Yano; Hiroyasu Matsuda
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Evaluation of PAC performance in a thick film photoresist
Author(s): Kathryn H. Jensen; Stanley A. Ficner; Yvette M. Perez
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Chemically amplified negative-tone resist using novel acryl polymer for 193-nm lithography
Author(s): Hideo Hada; Takeshi Iwai; Toshimasa Nakayama
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Metal ion removal from photoresist solvents
Author(s): Dennis Capitanio; Yoshiki Mizuno; Joseph Lee
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Develop temperature and process study on a thick film photoresist
Author(s): Octavia P. Lehar; Kathryn H. Jensen
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Organic antireflective coatings for 193-nm lithography
Author(s): Peter Trefonas; Robert F. Blacksmith; Charles R. Szmanda; Robert J. Kavanagh; Timothy G. Adams; Gary N. Taylor; Suzanne Coley; Gerd Pohlers
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Optimization of the lithographic performance for lift-off processing
Author(s): Wenyan Yin; Ward Fillmore; Kevin J. Dempsey
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Effect of developer normality on the resist dissolution rate and performance
Author(s): Medhat A. Toukhy; Brian Maxwell; Somboun Chanthalyma
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Formulation robustness of a chemically amplified ESCAP-type resist based on hydroxystyrene/t-butyl acrylate copolymer
Author(s): Medhat A. Toukhy; S. Chnthalyma; D. Khan; G. McCormick; T. V. Jayaraman; Veerle Van Driessche
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Theoretical analysis of line-edge roughness using FFT techniques
Author(s): Takeshi Ohfuji; Masayuki Endo; Hiroaki Morimoto
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Sub-0.25-um i-line photoresist: the role of advanced resin technology
Author(s): Cheng-Bai Xu; Anthony Zampini; Harold F. Sandford; Joseph Lachowski; Judy Carmody
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High-resolution negative-tone chemically amplified i-line resists
Author(s): Edward W. Rutter; Jonathan C. Root; Larry F. Bacchetti
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CVD photoresist performance for 248-nm lithography
Author(s): Cedric Monget; Olivier P. Joubert; Timothy W. Weidman; Olivier Toublan; Jean-Pierre Panabiere; Andre P. Weill
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Experimental study of line-end shortening
Author(s): Xuelong Shi; Robert John Socha; Joseph J. Bendik; Mircea V. Dusa; Will Conley; Bo Su
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Role of acid charge in chemically amplified resists
Author(s): Xuelong Shi
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Impact of photoacid generator structure on DUV resist performance
Author(s): James F. Cameron; Sheri L. Ablaza; Guangyu Xu; Wang Yueh
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Recent progress in 193-nm antireflective coatings
Author(s): James D. Meador; Douglas J. Guerrero; Gu Xu; Xie Shao; Norman Dobson; James B. Claypool; Kelly A. Nowak
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193-nm single-layer process for 150-nm technology generation and below
Author(s): Gilles R. Amblard; Peter Zandbergen; Martin McCallum; Alan Stephen; Jeff D. Byers; Kim R. Dean; Jeff Meute; Carla M. Nelson-Thomas
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Process margin in ArF lithography considering process window distortion
Author(s): Ichiro Okabe; Takeshi Ohfuji; Masayuki Endo; Hiroaki Morimoto
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Chemical and processing aspects of thin imaging layers
Author(s): Wendy F.J. Gehoel-van Ansem; Frank T.G.M. Linskens; Vinh Phuc Pham
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Planarizing AR for DUV lithography
Author(s): Timothy G. Adams; Suzanne Coley; Manuel doCanto; Dana Gronbeck; Matthew King; Edward K. Pavelchek
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Simple method for measuring acid generation quantum efficiency at 193 nm
Author(s): Charles R. Szmanda; Robert J. Kavanagh; John F. Bohland; James F. Cameron; Peter Trefonas; Robert F. Blacksmith
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Methodology for modeling and simulating line-end shortening effects in deep-UV resist
Author(s): Mosong Cheng; Ebo H. Croffie; Andrew R. Neureuther
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Accuracy of current model descriptions of a DUV photoresist
Author(s): Doris Kang; Edward K. Pavelchek; Catherine I. Swible-Keane
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Non-chemically amplified 193-nm top surface imaging photoresist development: polymer substituent and polydispersity effects
Author(s): Myoung-Soo Kim; Hyoung-Gi Kim; Hyeong-Soo Kim; Ki-Ho Baik; Donald W. Johnson; George J. Cernigliaro; David W. Minsek
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Printing various feature types at low k factors with advanced i-line negative resists
Author(s): J. Alexander Chediak; Derek Y. Chen; David T. Long; Premlatha Jagannathan; Charles Richwine; Laura Benner
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Characterizing acid mobility in chemically amplified resists via spectroscopic methods
Author(s): Julie L. Jessop; Scott N. Goldie; Alec B. Scranton; Gary J. Blanchard; Bharath Rangarajan; Luigi Capodieci; Ramkumar Subramanian; Michael K. Templeton
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Selection of attenuated phase shift mask compatible contact hole resists for KrF optical lithography
Author(s): Zhijian G. Lu; Yuping Cui; Alan C. Thomas; Scott M. Mansfield; Gerhard Kunkel; David Dobuzinsky; Franz X. Zach; Daniel Liu; K. Rex Chen; George M. Jordhamo; Alois Gutmann; Timothy R. Farrell
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Novel approach for the photostabilization of chemically amplified photoresists
Author(s): Ronald A. Carpio; Roy A. Martinez; Robert D. Mohondro
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Optimization of 300-mm coat, exposure, and develop processes for 180-nm and smaller features
Author(s): Walter H. Swanson; John S. Petersen; Wang Pen Mo; Joseph A. Heck
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Top antireflective coating process for deep-UV lithography
Author(s): Allen C. Fung; Binder K. Mann; Ronald J. Eakin; Pierre Silvestre; Brad Williams; Jason Miyake; Yusuke Takano
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Preparation of lower-dispersity fractionated novolak resins by ultracentrifugation
Author(s): Douglas S. McKenzie; Michelle M. Cook; M. Dalil Rahman; Stan F. Wanat; Melodie I. Munoz; Robert K. Fea; Balaji Narasimhan
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Measurement of parameters for simulation of deep-UV lithography using an FT-IR baking system
Author(s): Atsushi Sekiguchi; Chris A. Mack; Mariko Isono; Toshiharu Matsuzawa
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Effect of developer temperature and normality on chemically amplified photoresist dissolution
Author(s): Mark John Maslow; Chris A. Mack; Jeff D. Byers
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Effects of amines on postlithographic photo and thermal curing of deep-UV resists
Author(s): Robert D. Mohondro; John S. Hallock; Ivan L. Berry; Roy A. Martinez
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Process and performance optimization of bottom antireflective coatings: II
Author(s): Shuji Ding; John P. Sagan; Jianhui Shan; Eleazar Gonzalez; Sunit S. Dixit; Ying Liu; Dinesh N. Khanna
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Second-generation 193-nm bilayer resist
Author(s): Patrick Foster; Thomas Steinhaeusler; John J. Biafore; Gregory D. Spaziano; Sydney G. Slater; Andrew J. Blakeney
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Polymeric base additives for lithographic improvement in DUV resist system
Author(s): Wu-Song Huang
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Benzyloxypropene-protected PHS resist system for e-beam applications
Author(s): Wu-Song Huang; Ranee W. Kwong; Wayne M. Moreau; Mark Chace; Kim Y. Lee; C. K. Hu; David R. Medeiros; Marie Angelopoulos
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Exploratory approaches to the study of acid diffusion and acid loss from polymer films using absorption and fluorescence spectroscopy
Author(s): Chris A. Coenjarts; James F. Cameron; Nicole Deschamps; David Hambly; Gerd Pohlers; Juan C. Scaiano; Roger F. Sinta; Susan Virdee; Anthony Zampini
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Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist
Author(s): Jason P. Minter; Matthew F. Ross; William R. Livesay; Selmer S. Wong; Mark E. Narcy; Trey Marlowe
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Color filter array for CCD and CMOS image sensors using a chemically amplified thermally cured pre-dyed positive-tone photoresist for 365-nm lithography
Author(s): Harris R. Miller
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SiON-based antireflective coating for 193-nm lithography
Author(s): Patrick Schiavone; C. Esclope; A. Halimaoui
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Polymer-platform-dependent characteristics of 193-nm photoresists
Author(s): Juliann Opitz; Robert D. Allen; Gregory Breyta; Donald C. Hofer; Narayan Sundararajan; Christopher Kemper Ober
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Molecular weight tailoring in methacrylate 193-nm photoresists
Author(s): Thomas I. Wallow; Phillip J. Brock; Hoa D. Truong; Robert D. Allen; Juliann Opitz; Donald C. Hofer
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Low-temperature technique for thick film resist stabilization and curing
Author(s): Jason P. Minter; Selmer S. Wong; Trey Marlowe; Matthew F. Ross; Mark E. Narcy; William R. Livesay
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Comparative study of resist stabilization techniques for metal etch processing
Author(s): Gerry Becker; Matthew F. Ross; Selmer S. Wong; Jason P. Minter; Trey Marlowe; William R. Livesay
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Evaluation of stabilization techniques for ion implant processing
Author(s): Matthew F. Ross; Selmer S. Wong; Jason P. Minter; Trey Marlowe; Mark E. Narcy; William R. Livesay
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Evaluation of electron beam stabilization for ion implant processing
Author(s): Stephen Jack Buffat; Bee Kickel; B. Philipps; J. Adams; Matthew F. Ross; Jason P. Minter; Trey Marlowe; Selmer S. Wong
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Alternate novolak resin fractionation
Author(s): Michelle M. Cook; M. Dalil Rahman; Stan F. Wanat; Douglas S. McKenzie; Balaji Narasimhan; Robert K. Fea; Melodie I. Munoz
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Low-polydispersity novolak resins for i-line resists
Author(s): Stan F. Wanat; M. Dalil Rahman; Dana L. Durham; Douglas S. McKenzie; Michelle M. Cook
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Cycloolefin/maleic anhydride copolymers for 193-nm resist compositions
Author(s): M. Dalil Rahman; Ralph R. Dammel; Michelle M. Cook; Stanley A. Ficner; Munirathna Padmanaban; Joseph E. Oberlander; Dana L. Durham; Axel Klauck-Jacobs
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Effect of cresol monomers in three-component novolak resin on photolithographic performance
Author(s): Woo-Kyu Kim; M. Dalil Rahman; Stanley A. Ficner; Dinesh N. Khanna
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Reactive ion etch studies of DUV resists
Author(s): Ranee W. Kwong; Wayne M. Moreau; Wendy Yan
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Optical lithography simulation and photoresist optimization for photomask fabrication
Author(s): Benjamen M. Rathsack; Cyrus Emil Tabery; Steven A. Scheer; Mike Pochkowski; Cecilia E. Philbin; Franklin D. Kalk; Clifford L. Henderson; Peter D. Buck; C. Grant Willson
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Efficient simulation of postexposure bake processes in STORM
Author(s): Ebo H. Croffie; Mosong Cheng; Marco Antonio Zuniga; Andrew R. Neureuther
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Performance impact of novel polymeric dyes in photoresist applications
Author(s): Ping-Hung Lu; Salem Mehtsun; John P. Sagan; Jianhui Shan; Eleazar Gonzalez; Shuji Ding; Dinesh N. Khanna
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Important role of hydroxyethyl derivatives of poly(hydroxystyrene) in the development of advanced negative resists
Author(s): Pushkara Rao Varanasi; Niranjan Patel
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Spinnable and UV-patternable hybrid sol-gel silica glass for direct semiconductor dielectric layer manufacturing
Author(s): Mark P. Andrews; Ping Zhang; S. Iraj Najafi; Keith K. Chao; Nicholas F. Pasch
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FT-IR method to determine Dill's C parameter for DNQ/novolac resists with e-beam and i-line exposure
Author(s): Theodore H. Fedynyshyn; Scott P. Doran; Chris A. Mack
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Screening of DNQ/novolac resists with e-beam exposure
Author(s): Theodore H. Fedynyshyn; Scott P. Doran; Michele L. Lind; Theodore M. Lyszczarz; William F. DiNatale; Donna Lennon; Charles A. Sauer; Jeff Meute
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Improved resolution with advanced negative DUV photoresist with 0.26N capability
Author(s): Gregory P. Prokopowicz; Jacque H. Georger; Eyad Ayyash; James W. Thackeray; William R. Brunsvold; Laura L. Kosbar; Ali Afzali-Kushaa; Jeffrey D. Gelorme
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Conjugate heat transfer analysis of 300-mm bake station
Author(s): Natarajan Ramanan; Frank F. Liang; James B. Sims
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