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Proceedings of SPIE Volume 3677

Metrology, Inspection, and Process Control for Microlithography XIII
Editor(s): Bhanwar Singh
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Volume Details

Volume Number: 3677
Date Published: 14 June 1999
Softcover: 101 papers (1084) pages
ISBN: 9780819431516

Table of Contents
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Application of atomic force microscopy to lithography characterization and control
Author(s): Mark E. Lagus; James T. Marsh
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High-aspect-ratio depth determination using nondestructive AFM
Author(s): V.C. Jai Prakash; Mark E. Lagus; A. Meyyappan; Sylvain Muckenhirn
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Dimensional metrology with the NIST calibrated atomic force microscope
Author(s): Ronald G. Dixson; Rainer G.J. Koening; Vincent Wen-Chieh Tsai; Joseph Fu; Theodore V. Vorburger
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Quantitative line edge roughness characterization for sub-0.25-um DUV lithography
Author(s): Avinash Kant; George Talor; Nandasiri Samarakone
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Evaluation of atomic force microscopy: comparison with electrical CD metrology and low-voltage scanning electron microscopy
Author(s): Sanjay K. Yedur; Bhanwar Singh
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Metrology methods for quantifying edge roughness: II
Author(s): Carla M. Nelson-Thomas; Susan C. Palmateer; Anthony R. Forte; Susan G. Cann; S. Deneault; Theodore M. Lyszczarz
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Measuring fab overlay programs
Author(s): Richard J. Martin; Xuemei Chen; Itzik Goldberger
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Supersparse overlay sampling plans: an evaluation of methods and algorithms for optimizing overlay quality control and metrology tool throughput
Author(s): Joseph C. Pellegrini; Ziad R. Hatab; Jeffrey M. Bush; Thomas R. Glass
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Characterizing lens distortion to overlay accuracy by using fine measurement pattern
Author(s): Ronfu Chu; Chungwei Hsu; Tsu-wen Hwang
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Focus and edge detection algorithms and their relevance to the development of an optical overlay calibration standard
Author(s): Stephen H. Fox; Richard M. Silver; Edward Kornegay; Mario Dagenais
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Alignment and overlay metrology issues for copper/low-K dual-damascene interconnect
Author(s): Kafai Lai; Chris Nelson; Mark R. Breen; Theodore G. Doros; Dan W. Holladay
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Algorithm implementation and techniques for providing more-reliable overlay measurements and better tracking of the shallow-trench isolation (STI) process
Author(s): Doug Schramm; Dale Bowles; Martin E. Mastovich; Paul C. Knutrud; Anastasia Tyurina
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Two-dimensional calibration artifact and measurement methodology
Author(s): Richard M. Silver; Theodore D. Doiron; William B. Penzes; Edward Kornegay; Stephen H. Fox; Michael T. Takac; Stephen C. Rathjen; David T. Owens
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Distinguishing dose from defocus for in-line lithography control
Author(s): Christopher P. Ausschnitt
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Scatterometry for post-etch polysilicon gate metrology
Author(s): Christopher C. Baum; Robert A. Soper; Stephen W. Farrer; J. Leon Shohet
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Specular spectroscopic scatterometry in DUV lithography
Author(s): Xinhui Niu; Nickhil H. Jakatdar; Junwei Bao; Costas J. Spanos; Sanjay K. Yedur
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Instrumentation of a deep-UV microscope resolving less than 0.15 um
Author(s): Katsumi Ogino; Jiro Mizuno; Atushi Takeuchi; Noboru Amemiya; Yasuo Yonezawa; Toshiaki Nihoshi; Hisao Osawa; Hiroshi Ooki
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Sensitivity analysis of fitting for scatterometry
Author(s): Petre-Catalin Logofatu; John Robert McNeil
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Automatic in-situ focus monitor using line-shortening effect
Author(s): Young-Chang Kim; Gisung Yeo; Jae-Han Lee; Hak Kim; U-In Chung
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Understanding optical end of line metrology
Author(s): David H. Ziger; Pierre Leroux
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New approach to correlating overlay and yield
Author(s): Moshe E. Preil; John S. McCormack
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Characterization and optimization of overlay target design for shallow-trench isolation (STI) process
Author(s): Stephen Hsu; Jason K. Saw; Daniel R. Busath
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Comparison of optical, SEM, and AFM overlay measurement
Author(s): V.C. Jai Prakash; Christopher J. Gould
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Characterization of overlay tolerance requirements for via to metal alignment
Author(s): John A. Allgair; Mike Schippers; Brad Smith; Richard C. Elliott; John D. Miller; John Charles Robinson
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Wafer mapping for stepper effects characterization
Author(s): Yuan Zhang; Ronald A. Carpio; Lucian Wagner; Peter V. Golubtsov
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Quantification of wafer printability improvements with scanning steppers using new flatness metrics
Author(s): Yiorgos Kostoulas; Sahra Berman Tanikawa; David Kallus; Randal K. Goodall
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Effect of the control of global planarity of intermetal dielectric layers on the lithographic process window
Author(s): Shani Keysar; Leah Markowitz; Corin Ben-Gigi; Rama Tweg; Ayelet Margalit-Ilovich; Avishai Kepten; Amir Wachs; Roey Shaviv
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CD-SEM precision: improved procedure and analysis
Author(s): Mina Menaker
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Multiple CD-SEM matching for 0.18-um lines/spaces at different exposure conditions
Author(s): Andre Engelen; Ingrid Minnaert-Janssen
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Characteristics of accuracy for CD metrology
Author(s): G. William Banke; Charles N. Archie
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Contact hole characterization by SEM waveform analysis
Author(s): Douglas G. Sutherland; Andrei Veldman; Zoe A. Osborne
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CD-SEM edge width applications and analysis
Author(s): Eric P. Solecky; Roger S. Cornell
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Production metrology and control of color filter array photolithography for CMOS imagers
Author(s): Arnold W. Yanof; A. Daou; James P. Annand; M. Pantel; Cliff I. Drowley; John N. Helbert; Carlos L. Ygartua; Clive Hayzelden
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Ultrasonic monitoring of photoresist processing
Author(s): Susan L. Morton; F. Levent Degertekin; Butrus T. Khuri-Yakub
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Real-time methodologies for monitoring airborne molecular contamination in modern DUV photolithography facilities
Author(s): Oleg P. Kishkovich; Devon A. Kinkead; John K. Higley; Robert Kirwin; John Piatt
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Algorithm for controlling objective lens temperature
Author(s): Weiming Chen; Chao He; Yeyi Liu
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Improved wafer stepper alignment performance using an enhanced phase grating alignment system
Author(s): Jaap H. M. Neijzen; Robert D. Morton; Peter Dirksen; Henry J. L. Megens; Frank Bornebroek
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CD error budget analysis for 0.18-um inlaid trench lithography
Author(s): Sergei V. Postnikov; John L. Sturtevant; Kevin D. Lucas; Chong-Cheng Fu
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Lithography performance indicator (LPI) and a new lumped parameter to derive resist images from aerial images
Author(s): Burn Jeng Lin
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Data analysis for photolithography
Author(s): Chris A. Mack; Sven Jug; Dale A. Legband
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Application of model-based lithographic process control for cost-effective IC manufacturing at 0.13 um and beyond
Author(s): Kevin M. Monahan; Patrick J. Lord; Clive Hayzelden; Waiman Ng
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Parameter extraction framework for DUV lithography simulation
Author(s): Nickhil H. Jakatdar; Junwei Bao; Costas J. Spanos; Xinhui Niu; Joseph J. Bendik; Stephen L. Hill
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Antireflective coating optimization techniques for sub-0.2-um geometries
Author(s): Kevin D. Lucas; C. Cook; K. Lee; Jamie A. Vasquez; B. Montgomery; K. Wehmer; Stanley M. Filipiak; D. O'Meara; Charles Fredrick King; Anna Phillips; Benjamin C. P. Ho
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Factors that determine the optimum reduction factor for wafer steppers
Author(s): Harry J. Levinson; Paul W. Ackmann; Moshe E. Preil; William T. Rericha
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Productive application of voltage contrast for detection of optically undetectable defects
Author(s): Christopher G. Talbot; Richard Barnard; John Jamieson; Chiwoei Wayne Lo; Pierre Perez; Andy Pindar
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Method for enhancing topography and material contrast in automatic SEM review
Author(s): Noam Dotan
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Methodology for yield enhancement based on the analysis of defects at the lithographic step
Author(s): Manda Kulkarni; Andrew Skumanich
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New patterned wafer inspection system with the function to classify fatal defects
Author(s): Masami Ikota; Aritoshi Sugimoto; Yuko Inoue; Hisato Nakamura
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Defect reduction methodology in the lithography module
Author(s): Ingrid B. Peterson
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Application of spatial signature analysis to electrical test data: validation study
Author(s): Thomas P. Karnowski; Kenneth W. Tobin; Shaun S. Gleason; Fred Lakhani
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Using laser surface scanning and bare wafer review to diagnose photolithography track developer process-induced defect issues
Author(s): Linda M. Bond; Christine Fischer; Michael J. Satterfield; Dan Sutton; Karen L. Turnquest
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Reduction of postdevelop defects and process times for DUV lithography
Author(s): Murthy S. Krishna; Emir Gurer; Ed C. Lee; Gary E. Flores; Sandra S. Ooka; John W. Salois; Royal Cherry; Reese M. Reynolds
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Post-pattern-inspection strategy
Author(s): Mouli Vaidyanathan
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Analysis of adhesion behavior of microresist pattern by direct collapse method with atomic force microscope tip
Author(s): Akira Kawai
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2001 and beyond: a challenge for metrology
Author(s): Syed A. Rizvi
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Intercomparison of SEM, AFM, and electrical linewidths
Author(s): John S. Villarrubia; Ronald G. Dixson; Samuel N. Jones; Jeremiah R. Lowney; Michael T. Postek; Richard A. Allen; Michael W. Cresswell
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Telepresence: a new paradigm for industrial and scientific collaboration
Author(s): Michael T. Postek; Marylyn Hoy Bennett; Nestor J. Zaluzec
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Novel metrology for measuring spectral purity of KrF lasers for deep-UV lithography
Author(s): Alexander I. Ershov; Gunasiri G. Padmabandu; Jeremy D. Tyler; Palash P. Das
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Secondary electron spectroscopy for microanalysis and defect review
Author(s): David C. Joy; Neeraj Khanna; David Braski
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Inverse scattering approach to SEM linewidth measurements
Author(s): Mark P. Davidson; Andras E. Vladar
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Monte Carlo simulation of charging effects in linewidth metrology: II. On insulator substrate
Author(s): Yeong-Uk Ko; Myung-Sai Chung
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Determining measurement variation of lens parameters using Monte Carlo simulations
Author(s): Wilco C.A. Ligthart
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Modeling and experimental aspects of apparent beam width as an edge resolution measure
Author(s): Charles N. Archie; Jeremiah R. Lowney; Michael T. Postek
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Optical linewidth models: then and now
Author(s): Robert D. Larrabee; Richard M. Silver; Mark P. Davidson
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Numerical modeling of the excimer beam
Author(s): Ying Lin; Jesse D. Buck
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Wafer printability simulation accuracy based on UV optical inspection images of reticle defects
Author(s): Donald W. Pettibone; Mohan Ananth; Maciej W. Rudzinski; Sterling G. Watson; Larry S. Zurbrick; Hua-Yu Liu; Linard Karklin
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CD error sensitivity to "sub-killer" defects at k1 near 0.4
Author(s): J. Fung Chen; Nathan A. Diachun; Kent H. Nakagawa; Robert John Socha; Mircea V. Dusa; Thomas L. Laidig; Kurt E. Wampler; Roger F. Caldwell; Douglas J. Van Den Broeke
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Direct interferometric phase measurement using an aerial image measurement system
Author(s): Song Peng; Michael S. Hibbs
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Atomic force microscopy: a diagnostic tool (in) for mask making in the coming years
Author(s): Syed A. Rizvi; A. Meyyappan
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Thermal analysis of hot plate resist baking using a lumped capacitance model
Author(s): Bo Zhou
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Automatic macroinspection system
Author(s): Koichiro Komatsu; Takeo Omori; Toshiaki Kitamura; Yasuharu Nakajima; Arun A. Aiyer; Kyoichi Suwa
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Defect detection difficulties post TEOS (oxide) deposition
Author(s): Mouli Vaidyanathan
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Defect inspection on CMP process and its application
Author(s): Minori N. Noguchi; Yoshimasa Oshima; Hidetoshi Nishiyama; Kenji Watanabe; Aritoshi Sugimoto
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Automated high-precision measurement of critical dimensions using the scanning probe microscope
Author(s): Donald A. Chernoff; David L. Burkhead
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Image processing for SEMs: is this the way to go for CD metrology?
Author(s): Eric P. Solecky; Charles N. Archie
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Optimization of advanced design rule processes utilizing postdevelop patterned-wafer inspection
Author(s): Andrew Skumanich; John Boyle; Gary Snyder; Xiaoming Yin
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Application of resolution enhancement techniques in thin film head processing
Author(s): Lijun Tong; Joyce Hsiang; Johnny Gossett; Gary Newman; Kelly J. Abreau; Tzu-chin Chuang
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Role of LV-SEM reticle CD measurements on DUV lithography
Author(s): Thomas Marschner; Ivan K.A. Pollentier; Goedele Potoms; Rik M. Jonckheere; Kurt G. Ronse; Marco Polli
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High-resolution UV wavelength reticle contamination inspection
Author(s): Franklin D. Kalk; William Waters Volk; James N. Wiley; Ed Hou; Sterling G. Watson
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High-accuracy characterization of antireflective coatings and photoresists by spectroscopic ellipsometry: a new tool for 300-mm wafer technology
Author(s): Pierre Boher; Christophe Defranoux; Sophie Bourtault; Jean-Louis P. Stehle
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Accelerated testing technique for evaluating performance of chemical air filters for DUV photolithographic equipment
Author(s): Oleg P. Kishkovich; Dennis Bolgov; William Goodwin
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Developments in optical modeling methods for metrology
Author(s): Mark P. Davidson
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Efficiency improvements of offline metrology job creation
Author(s): Victor J. Zuniga; Alan Carlson; John C. Podlesny; Paul C. Knutrud
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Broadband planarizing antireflective coating for i-line, DUV, and 193-nm microlithographic applications
Author(s): Xie Shao; James E. Lamb; James B. Claypool; William J. Simmons; Earnest C. Murphy
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New optimization concepts for photolithography production processes
Author(s): Dumitru Gh. Ulieru
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Evaluation of impurity migration and microwave digestion methods for lithographic materials
Author(s): Fu-Hsiang Ko; Li-Tung Hsiao; Cheng-Tung Chou; Mei-Ya Wang; Tien-Ko Wang; Yuh-Chang Sun; Bor-Jen Cheng; Steven Yeng; Bau-Tong Dai
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Mask error factor and critical dimension budgets for sub-half-micron CMOS processes
Author(s): Graham G. Arthur; Brian Martin
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Improved CD-SEM optics with retarding and boosting electric fields
Author(s): Yoichi Ose; Makoto Ezumi; Hideo Todokoro
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Model considerations, calibration issues, and metrology methods for resist-bias models
Author(s): Edward W. Conrad; Daniel C. Cole; David P. Paul; Eytan Barouch
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Improving the accuracy of overlay measurement through wafer sampling map rearrangement
Author(s): Chungwei Hsu; Ronfu Chu; Jen Ho Chen
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Application of top-down CD-SEM metrology in measuring wafers with resist film thickness of 24 um with various sidewall profiles
Author(s): Sunit S. Dixit; Ying Liu; Amir R. Azordegan
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Resist-profile-dependent photobias and in-line DICD control strategy
Author(s): Chung Yih Lee; Thian Teck Ong; Ma Wei Wen; Alex Tsun-Lung Cheng; Lin Yih Shung
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Improve the accuracy and sensitivity of CD-SEM linewidth measurement for deep-submicron polygate pattern transfer
Author(s): Xin Mei; Ming Hui Fan; Alex Tsun-Lung Cheng
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Pattern measurements of reticles with optical proximity correction assist features using the atomic force microscope
Author(s): Kuo-Jen Chao; Robert J. Plano; Jeffrey R. Kingsley; J. Fung Chen; Roger F. Caldwell
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Precision improvement in diffraction measurement for the one-dimensional grating period
Author(s): Beomhoan O; Won Young Song; Byong Chon Park; Yeong-Uk Ko
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Interferometrical profilometry at surfaces with varying materials
Author(s): Holger Jennewein; Harald Gottschling; Thomas Ganz; Theo T. Tschudi
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Toward nanometer accuracy measurements
Author(s): John Kramar; Edward Amatucci; David E. Gilsinn; Jau-Shi Jay Jun; William B. Penzes; Fredric Scire; E. Clayton Teague; John S. Villarrubia
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Alignment strategy for metal layers after W-CMP
Author(s): Sajan R. Marokkey; Juan Boon Tan; Yan Tse Tak; Alex Tsun-Lung Cheng
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Photoresist removal using gaseous sulfur trioxide cleaning technology
Author(s): Helene Del Puppo; Paul B. Bocian; Ahmad Waleh
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Matching of different pattern placement metrology systems: an example for practical use of different LMS systems in the inspection process for photomasks
Author(s): Thomas Struck; Klaus-Dieter Roeth
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Regional contrast enhancement of SEM images
Author(s): Yaron I. Gold
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