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Proceedings of SPIE Volume 3625

Physics and Simulation of Optoelectronic Devices VII
Editor(s): Peter Blood; Akira Ishibashi; Marek Osinski
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Volume Details

Volume Number: 3625
Date Published: 6 August 1999
Softcover: 84 papers (840) pages
ISBN: 9780819430953

Table of Contents
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Characterization of InGaN/AlGaN multiple-quantum-well laser diodes
Author(s): Michael Kneissl; David P. Bour; Linda T. Romano; Daniel Hofstetter; Matt D. McCluskey; Clarence John Dunnrowicz; Mark Teepe; Rose M. Wood; Noble M. Johnson
Recombination lifetimes in undoped and doped ZnCdSe laser structures
Author(s): John F. Donegan; Christopher Jordan; G. Laird; S. Taniguchi; T. Hino; E. Kato; N. Noguchi; Akira Ishibashi
Modeling the optical constants of wide-bandgap materials
Author(s): Aleksandra B. Djurisic; KwokOn Tsang; E. Herbert Li
Nonlinear optical spectroscopy of band tail states in highly excited InGaN
Author(s): Theodore J. Schmidt; Yong-Hoon Cho; Sergiy Bidnyk; Jin-Joo Song; Stacia Keller; Umesh K. Mishra; Steven P. DenBaars
Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells
Author(s): Sergiy Bidnyk; Theodore J. Schmidt; Brian D. Little; Jerzy S. Krasinski; Jin-Joo Song; Stacia Keller; Steven P. DenBaars
Orthogonal coupled-mode theory for rectangular dielectric waveguides
Author(s): Aref Bakhtazad; Habibollah Abiri; Rahim Ghayour; Mohammad H. Rahnavard; Mehrdad Zomorrodi
Recent advances in ultrafast all-optical signal processing
Author(s): Robert J. Manning; A. E. Kelly; A. D. Ellis; Ian D. Phillips; Alistair J. Poustie; Keith J. Blow
Generation of short wavelength-tunable semiconductor laser pulses
Author(s): Dieter Huhse; Christian Warmuth; Markus Schulze; Dieter Bimberg
Electrical autocorrelation of pin photodiodes
Author(s): Anthony J. Vickers; Ercan Ucgun; Majid A. Hassan; Richard A. Dudley; Geoff Hill
Cross gain modulation in semiconductor optical amplifier
Author(s): Honglei Fan; Chiming Wu; Niloy K. Dutta; Uziel Koren; C. H. Chen; Alfonso B. Piccirilli
Analysis of surface-mode coupled semiconductor laser structures with adjustable emission wavelength
Author(s): Norman Finger; Peer Oliver Kellermann; Werner Schrenk; Erich Gornik
Electronic structure and optical polarization anisotropy of self-organized InAs/GaAs quantum dots
Author(s): Weidong Yang; Hao Lee; Peter C. Sercel; A. G. Norman
Long-wavelength vertical-cavity lasers
Author(s): Klaus P. Streubel; Mattias Hammar; F. Salomonsson; J. Bentell; Sebastian Mogg; S. Rapp; Joel Jacquet; J. Boucart; Christophe Starck; Antonina Plais; F. Gaborit; E. Derouin; N. Bouche; Alok P. Rudra; Alexei V. Syrbu; Vladimir P. Iakovlev; Claude-Albert Berseth; O. Dehaese; Eli E. Kapon
GaInAsP/InP vertical-cavity surface-emitting laser for 1.5-um operation
Author(s): Russell Sceats; Desi M. Ramoo; J. Masum; Naci Balkan; Michael J. Adams; A. J. Dann; Simon D. Perrin; Ian Reid; J. Reed; P. Cannard; Michael A. Fisher; D. J. Elton; M. Harlow
Hot-electron VCSEL
Author(s): Naci Balkan; Ismail Sokmen; Angela O'Brien-Davies; Richard J. Potter; Carl J. Hepburn; Adrian Boland-Thoms; Michael J. Adams; John Stuart Roberts
Characterization of a vertical-cavity surface-emitting laser (VCSEL) by electrical and optical noise measurements
Author(s): Guillaume Belleville; Philippe Signoret; Jean-Marie Peransin; Robert M. Alabedra; Bernard Pierre Orsal
Process simulation of selective-area MOCVD growth for optoelectronic integrated circuits
Author(s): Muhammad A. Alam; Roosevelt People; Mark S. Hybertsen
Development of an advanced computational model for OMCVD of indium nitride
Author(s): Carlos A. Cardelino; Craig E. Moore; Beatriz H. Cardelino; Ning Zhou; Samuel A. Lowry; Anantha Krishnan; Donald O. Frazier; Klaus J. Bachmann
Carrier transport in AlGaInP laser structures
Author(s): Peter Blood; Scott Wood; Peter M. Smowton; Catherine H. Molloy; Chris C. Button
Characterization of the effects of Al incorporation in AlGaInP light emitters
Author(s): Paul C. Mogensen; Peter Blood; G. Jones; Stephen W. Bland; N. J. Cain; D. W. Peggs; David J. Mowbray
Optical properties of tensile-strained barrier GaAsP/GaAs intermixed quantum well structure
Author(s): Steven K. H. Sim; Michael C. Y. Chan; E. Herbert Li
Magneto-excitons in (411)A and (100)-oriented GaAs/AlGaAs multiple quantum well structures
Author(s): Eric D. Jones; Keisuke Shinohara; Satoshi Shimomura; Satoshi Hiyamizu; Ilya Krivorotov; Krishan K. Bajaj
Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment
Author(s): Mark S. Hybertsen; Muhammad A. Alam; Gleb E. Shtengel; Gregory L. Belenky; C. Lewis Reynolds; Dmitri V. Donetsky; R. Kent Smith; Gene A. Baraff; Rudolf F. Kazarinov; James D. Wynn; L. E. Smith
Numerical simulation of energy balance equations in AlGaAs/GaAs p-i-n diodes with single quantum wells
Author(s): Hamid Z. Fardi; Dave W. Winston; Russell E. Hayes; Mark C. Hanna
Simulation of optical coupling in quantum well infrared photodetectors
Author(s): Prafulla J. Masalkar; Hironori Nishino; Kousaku Yamamoto; Yoshihiro Miyamoto; Toshio Fujii
Circuit-level model of semiconductor photodetectors
Author(s): Pablo V. Mena; James J. Morikuni; Austin V. Harton; Karl W. Wyatt
Simulations of InAs/InGaSb type-II heterostructures for mid-IR lasers
Author(s): Jun Zheng; C.H. Thompson Lin; Shin Shem Pei
Properties of spontaneous emission in semiconductor structures
Author(s): Christa L. A. Hooijer; Gao-Xiang Li; Klaas Allaart; Daan Lenstra
Oscillator parameters of semiconductor heterostructures
Author(s): Nadezhda Pavlovna Netesova
Electro-optic probing of GaAs
Author(s): Khalid A. Murad Ali; Anthony J. Vickers
Mid-infrared GaAs/AlGaAs quantum cascade lasers
Author(s): Peter Kruck; Carlo Sirtori; Stefano Barbieri; Philippe Collot; Julien Nagle; Mattias Beck; Jerome Faist; Ursula Oesterle
Many-body aspects of excitonic Rabi oscillations in semiconductors
Author(s): Rolf H. Binder; Maj Lindberg; Alex Schuelzgen; M. E. Donavan; Kai Wundke; Hyatt M. Gibbs; Galina Khitrova; Nasser Peyghambarian

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