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PROCEEDINGS VOLUME 3546

18th Annual BACUS Symposium on Photomask Technology and Management
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Volume Details

Volume Number: 3546
Date Published: 18 December 1998
Softcover: 68 papers (686) pages
ISBN: 9780819430076

Table of Contents
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Electron-beam lithography simulation for mask making: III. Effect of spot size, address grid, and raster writing strategies on lithography performance with PBS and ZEP-7000
Author(s): Chris A. Mack
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Development of a next-generation e-beam lithography system
Author(s): Yasutoshi Nakagawa; Tadashi Komagata; Hitoshi Takemura; Nobuo Gotoh; Kazumitsu Tanaka
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Evaluation of the practical use of GHOST technique for various e-beam resists
Author(s): Byung-Cheol Cha; Jin-Min Kim; Byung Guk Kim; Seong-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn
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Assessment of corner-rounding improvement by automatic software correction on laser pattern generator manufactured photomasks
Author(s): Wolfram Ziegler; Anja Rosenbusch
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New MEBES pattern generator
Author(s): Jan M. Chabala; Frank E. Abboud; Suzanne Weaver; Damon M. Cole
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1998 mask industry quality assessment
Author(s): Emilio P. Gonzalez-Lao
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Inductively coupled plasma etch of DUV MoSi photomasks: a designed study of etch chemistries and process results
Author(s): Chris Constantine; David J. Johnson; Russell J. Westerman; Andrew C. Hourd
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180-nm mask fabrication process using ZEP 7000, multipass gray, GHOST, and dry etch for MEBES 5000
Author(s): Maiying Lu; Thomas P. Coleman; Charles A. Sauer
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High-resolution near-field mask repair with femtosecond laser
Author(s): Yosi Shani; Ian Melnik; Sasha Yoffe; Yuval Sharon; Klony S. Lieberman; Hanan Terkel
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MoSi PSM defect inspection and sensitivity analysis
Author(s): Jerry Xiaoming Chen; Robert K. Henderson; Franklin D. Kalk
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Use of KLA-Tencor STARlight SL 300 for in-process contamination inspection to control reticle defect densities
Author(s): Duane Dutton; Wayne P. Shen; Richard Yee; James A. Reynolds
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Size matters: defect detectability in reticle and wafer inspection including advanced aerial image simulation for defect printability
Author(s): Eli Almog; Roger F. Caldwell; Fang Cheng Chang; J. Fung Chen; Nigel R. Farrar; Linard Karklin; Thomas L. Laidig; Saeed Sabouri; Wayne P. Shen; Wolfgang Staud; Clive Wu; Jeremy Zelenko
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Detecting CD error or transmission error of photomask patterns
Author(s): Kyoji Yamashita
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Compatibility of CD-SEM metrology with advanced e-beam resists
Author(s): Waiman Ng; Geoffrey T. Anderson; Suzanne Weaver; Homer Y. Lem
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LWM 200 CD metrology tool evaluation
Author(s): Robert Uitz; John M. Whittey
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Pellicle-induced reticle distortion: an experimental investigation
Author(s): Wen Chen; James A. Carroll; Glenn Storm; Ronald G. Ivancich; John P. Maloney; Olivier Maurin; Eric Souleillet
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Submicron optical CD metrology on photomasks
Author(s): Michael R. Schmidt; Leonard F. Dubuque; Lyndon Scott Gibbs
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Masks for extreme ultraviolet lithography
Author(s): Stephen P. Vernon; Patrick A. Kearney; William M. Tong; Shon T. Prisbrey; Cindy C. Larson; Craig E. Moore; Frank J. Weber; Gregory Frank Cardinale; Pei-yang Yan; Scott Daniel Hector
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Stencil mask technology for ion beam lithography
Author(s): Albrecht Ehrmann; Sabine Huber; Rainer Kaesmaier; Andreas B. Oelmann; Thomas Struck; Reinhard Springer; Joerg Butschke; Florian Letzkus; Karl Kragler; Hans Loeschner; Ivo W. Rangelow
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EUV mask absorber defect repair with focused ion beam
Author(s): Pei-yang Yan; Souping Yan; Guojing Zhang; Patrick A. Kearney; John D. Richards; Patrick Kofron; Jenn Chow
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Effects of material properties on patterning distortions of optical reticles
Author(s): Bassam Shamoun; Walter J. Trybula; Roxann L. Engelstad; Edward G. Lovell
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Automated layout and phase assignment techniques for dark-field alternating PSM
Author(s): Andrew B. Kahng; Huijuan Wang; Alexander Zelikovsky
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Mask specifications and OPC
Author(s): Wilhelm Maurer; Christoph M. Friedrich
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Comparison of single- and dual-exposure phase-shift mask approaches for polygate patterning
Author(s): Richard E. Schenker
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Phase controllability improvement for alternating phase shift mask
Author(s): Masami Nara; Toshifumi Yokoyama; Hiroshi Fujita; Hiroyuki Miyashita; Naoya Hayashi
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Inspection of OPC reticle for 0.18-um-rule devices
Author(s): Akihiko Ando; Yoji Tono-oka; Hiroyuki Shigemura; Haruo Iwasaki; Hiroyoshi Tanabe
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SIA Roadmap: impact on the lithography foodchain (Presentation Only)
Author(s): Klaus-Dieter Rinnen
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Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node
Author(s): John S. Petersen; Martin McCallum; Nishrin Kachwala; Robert John Socha; J. Fung Chen; Thomas L. Laidig; Bruce W. Smith; Ronald L. Gordon; Chris A. Mack
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Optical proximity correction for 0.15-um-rule memory devices
Author(s): Haruo Iwasaki; Hiroyoshi Tanabe; Takashi Inoue; Yoshiyuki Tanaka
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Some challenges for mask making to keep up with the roadmap
Author(s): Rik M. Jonckheere; John N. Randall; Thomas Marschner; Kurt G. Ronse
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In the year 2525, if x ray is still alive, if lithography can survive, they may find...
Author(s): John L. Nistler; Mark Michael; Fred N. Hause; Richard D. Edwards
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Issues on mask technologies: 0.18-um and beyond
Author(s): Naoya Hayashi; Hiroichi Kawahira; Hideaki Hamada
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Accuracy differences among photomask metrology tools and why they matter
Author(s): James E. Potzick
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Gaps in mask technology with respect to the National Technology Roadmap for Semiconductors
Author(s): Wallace R. Carpenter; Kimberly Sadler; Thomas White
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High-contrast positive resists for e-beam mask making
Author(s): Wu-Song Huang; Ranee W. Kwong; Wayne M. Moreau; Marie Angelopoulos; Jim Bucchiagnano; Karen E. Petrillo; Hiroshi Ito
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Characterization of OPC masks for thin-film head pole trimming applications
Author(s): Warren W. Flack; Sylvia White; Calvin Ho; Dan L. Schurz; Fabio Consentino
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Full-chip optical proximity correction using lithography simulation
Author(s): Graham G. Arthur; Brian Martin; Christine Wallace; Anja Rosenbusch; Huw Fryer
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Advanced mask cleaning for 0.20-um technology: an integrated user-supplier approach
Author(s): Rudolf Poschenrieder; Bernd Hay; Matthias Beier; Andrew C. Hourd; Harald Stuemer; Thomas M. Gairing
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Pellicle transmission uniformity requirements
Author(s): Thomas L. Brown; Kunihiro Ito
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Defect inspection capability for advanced OPC photomasks
Author(s): Joseph A. Straub; Anthony Vacca; Larry S. Zurbrick
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The AIMS tool: its potentials, applications, and issues
Author(s): Syed A. Rizvi; Nathan A. Diachun
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Mechanical distortions in advanced photomasks
Author(s): Andrew R. Mikkelson; Roxann L. Engelstad; Edward G. Lovell
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Stage Cartesian self-calibration: a second method
Author(s): Michael T. Takac; John M. Whittey
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Half-multiphase printing: a proposed throughput improvement on MEBES 4500
Author(s): Wayne P. Shen
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New approach to optical proximity correction
Author(s): Anja Rosenbusch; Andrew C. Hourd; Casper A. H. Juffermans; Hartmut Kirsch; Frederic P. Lalanne; Wilhelm Maurer; Carmelo Romeo; Kurt G. Ronse; Patrick Schiavone; Michal Simecek; Olivier Toublan; John G. Watson; Wolfram Ziegler; Rainer Zimmermann
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TiSi-nitride attenuating phase-shift photomask for 193-nm lithography
Author(s): Gillian A. M. Reynolds; Roger H. French; Peter F. Carcia; Charlie C. Torardi; Greg P. Hughes; David J. Jones; M. F. Lemon; M. H. Reilly; L. Wilson; C. R. Miao
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Resolution limits with 248-nm strong phase-shifting techniques for contact patterning applications
Author(s): Yulia O. Korobko; Mei-Chien Lu; Jesmar Telans; Jeffrey E. Powers
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Design and analysis of manufacturable alternating phase-shifting masks
Author(s): Ronald L. Gordon; Chris A. Mack; John S. Petersen
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DUV pellicle quality assessment based on customer priorities
Author(s): James L. Wood; Benjamin George Eynon; Franklin D. Kalk
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Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask through simulation I
Author(s): Robert John Socha; John S. Petersen; J. Fung Chen; Thomas L. Laidig; Kurt E. Wampler; Roger F. Caldwell
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Effect of reticle CD uniformity on wafer CD uniformity in the presence of scattering-bar optical proximity correction
Author(s): Konstantinos Adam; Robert John Socha; Mircea V. Dusa; Andrew R. Neureuther
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Impact of the loading effect on CD control in plasma etching of Cr photomasks using ZEP 7000 resist
Author(s): Frederick T. Chen; Wilman Tsai; Scott Chegwidden; S. Yu; Marilyn Kamna; Jeff N. Farnsworth; Thomas P. Coleman
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Actinic detection of EUVL mask blank defects
Author(s): Seongtae Jeong; Mourad Idir; Lewis E. Johnson; Yun Lin; Phillip J. Batson; Richard Levesque; Patrick A. Kearney; Pei-yang Yan; Eric M. Gullikson; James H. Underwood; Jeffrey Bokor
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Process margin in ArF lithography using an alternating phase-shifting mask
Author(s): Takahiro Matsuo; Keisuke Nakazawa; Tohru Ogawa
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Method to determine printability of photomask defects and its use in phase-shift mask evaluations
Author(s): Scott M. Mansfield; Richard A. Ferguson; Lars W. Liebmann; Antoinette F. Molless; Alfred K. K. Wong
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CD guarantee for the next-generation photomasks with CD-SEM
Author(s): Takayuki Iwamatsu; Koji Hiruta; Hiroaki Morimoto; Masashi Ataka; Jun Nitta
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Advanced mask printability analysis using TINT Virtual Stepper System
Author(s): Darren Taylor; Richard D. Eandi
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Reticle writer for next-generation SEMI mask standard: mask handling and exposure
Author(s): Christian Ehrlich
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Making high-performance scattering-bar OPC masks with vector-scan, variable-shaped e-beam, and raster-scan laser mask writers
Author(s): Hao Hsing Lu; Raymond Hwang; Vincent Lee; Willy Q; J. Fung Chen; Thomas L. Laidig; Kurt E. Wampler; Roger F. Caldwell
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Implementation and performance of a femtosecond laser mask repair system in manufacturing
Author(s): Richard A. Haight; Dennis Hayden; Peter Longo; Timothy E. Neary; Alfred Wagner
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Subresolution assist feature tolerences for contact windows using 193-nm lithography
Author(s): Armen Kroyan; Pat G. Watson; Raymond A. Cirelli; Omkaram Nalamasu; Anthony E. Novembre; Frank K. Tittel
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Resist charging in electron-beam lithography
Author(s): Min Bai; Daniel S. Pickard; Corina Tanasa; Mark A. McCord; C. Neil Berglund; Roger Fabian W. Pease
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Comparison of writing strategies subject to resist heating
Author(s): Sergey V. Babin
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Application of HT-PSM to 180-nm logic devices
Author(s): Yasutaka Kikuchi; Takashi Seno; Kensuke Kawanabe; Eiji Bunki; Yuki Otsuka; Yoshiro Yamada
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Rapid at-wavelength inspection of EUV mask blanks by photoresist transfer
Author(s): Steven J. Spector; Donald L. White; Donald M. Tennant; Ping Luo; Obert R. Wood
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Lithography process calibration with applications in defect printability analysis
Author(s): Shao-Po Wu; Hua-Yu Liu; Fang Cheng Chang; Linard Karklin
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