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Proceedings of SPIE Volume 3334

Optical Microlithography XI
Editor(s): Luc Van den Hove
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Volume Details

Volume Number: 3334
Date Published: 29 June 1998
Softcover: 107 papers (1106) pages
ISBN: 9780819427793

Table of Contents
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Application of alternating phase-shifting masks to 140-nm gate patterning: II. Mask design and manufacturing tolerances
Author(s): Hua-Yu Liu; Linard Karklin; Yao-Ting Wang; Yagyensh C. Pati
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Impact of coma on CD control for multiphase PSM designs
Author(s): Regina T. Schmidt; Chris A. Spence; Luigi Capodieci; Zoran Krivokapic; Bernd Geh; Donis G. Flagello
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0.18-um optical lithography performances using an alternating DUV phase-shift mask
Author(s): Yorick Trouiller; N. Buffet; Thierry Mourier; Patrick Schiavone; Yves Quere
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Narrow-pitch contact array patterning technique for Gb DRAM using multi-phase-shifting mask
Author(s): Takashi Nakabayashi; Koji Matsuoka; Shigeo Irie; Hiromasa Fujimoto; Takayuki Yamada; Shuichi Mayumi
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Evaluation of phase-edge phase-shifting mask for sub-0.18-um gate patterns in logic devices
Author(s): DongHo Cha; Jongwook Kye; Nakgeuon Seong; Hoyoung Kang; Hanku Cho; Joo-Tae Moon
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CD control comparison of step-and-repeat versus step-and-scan DUV lithography for sub-0.25-um gate printing
Author(s): Kurt G. Ronse; Mireille Maenhoudt; Thomas Marschner; Luc Van den hove; Bob Streefkerk; Jo Finders; Jan B.P. van Schoot; Paul Frank Luehrmann; Anna Maria Minvielle
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Effect of stage synchronization error of KrF scan on 0.18-um patterning
Author(s): Takayuki Uchiyama; Takeo Hashimoto; Masashi Fujimoto; Seiji Matsuura; Tamio Yamazaki; Kunihiko Kasama
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Intrafield critical dimension variation using KrF scanner system for 0.18-um lithography
Author(s): Donggyu Yim; Hyeong-Soo Kim; Ki-Ho Baik
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Lithographic effects of mask critical dimension error
Author(s): Alfred K. K. Wong; Richard A. Ferguson; Lars W. Liebmann; Scott M. Mansfield; Antoinette F. Molless; Mark O. Neisser
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Lithography of 180-nm design rule for 1-Gb DRAM
Author(s): Dongseok Nam; Junghyun Lee; Chang-Hwan Kim; Seong-Woon Choi; Hoyoung Kang; Joo-Tae Moon
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Reduction of mask-induced CD errors by optical proximity correction
Author(s): John Randall; Alexander V. Tritchkov; Rik M. Jonckheere; Patrick Jaenen; Kurt G. Ronse
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Subresolution assist feature and off-axis illumination optimization for 200- and 240-nm contact windows using 248-nm lithography
Author(s): Pat G. Watson; Raymond A. Cirelli; Allen G. Timko; Omkaram Nalamasu; Carl Lockstamphor; Steven D. Berger; Neil J. Bassom; Ganesh Sundaram
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Revalidation of the Rayleigh resolution and DOF limits
Author(s): Bruce W. Smith
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Quasi-physical model for fast resist contour simulation: importance of lens aberrations and acid diffusion in LSI pattern design
Author(s): Hiroshi Fukuda; Keiko T. Hattori
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Lithographic process simulation for scanners
Author(s): Andreas Erdmann; Michael Arnz; Mireille Maenhoudt; Jan Baselmans; Jan-Chris van Osnabrugge
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Lithography simulation employing rigorous solutions to Maxwell's equations
Author(s): Ronald L. Gordon; Chris A. Mack
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LAVA: lithography analysis using virtual access
Author(s): Chang Hsu; Rona Yang; Jeffery Cheng; Peter Chien; Victor Wen; Andrew R. Neureuther
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0.25-um logic manufacturability using practical 2D optical proximity correction
Author(s): Michael E. Kling; Kevin D. Lucas; Alfred J. Reich; Bernard J. Roman; Harry Chuang; Percy V. Gilbert; Warren D. Grobman; Edward O. Travis; Paul Tsui; Tam Vuong; Jeff P. West
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Practical approach to control the full-chip-level gate CD in DUV lithography
Author(s): Chul-Hong Park; Yoo-Hyon Kim; Hoong-Joo Lee; Jeong-Taek Kong; Sang-Hoon Lee
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Accurate proximity correction method with total-process proximity-based correction factor (TCF)
Author(s): Kohji Hashimoto; Satoshi Usui; Shigeru Hasebe; Masayuki Murota; Takeo Nakayama; Fumitomo Matsuoka; Soichi Inoue; Sachiko Kobayashi; Kazuko Yamamoto
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Applications of enhanced optical proximity correction models
Author(s): Jack Q. Zhao; Joseph G. Garofalo; James W. Blatchford; Edward Ehrlacher; Ellis Nease
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Process proximity correction using an automated software tool
Author(s): Wilhelm Maurer; Christoph Dolainsky; Joerg Thiele; Christoph M. Friedrich; Paul Karakatsanis
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Optical lens specifications from the user's perspective
Author(s): Christopher J. Progler; Donald C. Wheeler
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Aberration evaluation and tolerancing of 193-nm lithographic objective lenses
Author(s): Bruce W. Smith; James E. Webb; John S. Petersen; Jeff Meute
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Pupil illumination: in-situ measurement of partial coherence
Author(s): Joseph P. Kirk; Christopher J. Progler
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Characterization of spatial coherence uniformity in exposure tools
Author(s): Ilya M. Grodnensky; Etsuya Morita; Kyoichi Suwa; Shigeru Hirukawa
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Evaluation of coma aberration in projection lens by various measurements
Author(s): Takashi Saito; Hisashi Watanabe; Yoshimitsu Okuda
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ArF excimer laser lithography with bottom antireflective coating
Author(s): Shinji Kishimura; Makoto Takahashi; Keisuke Nakazawa; Takeshi Ohfuji; Masaru Sasago; Masaya Uematsu; Tohru Ogawa; Hiroshi Ohtsuka
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Bottom-ARC optimization methodology for 0.25-um lithography and beyond
Author(s): Maaike Op de Beeck; Geert Vandenberghe; Patrick Jaenen; Feng-Hong Zhang; Christie Delvaux; Paul Richardson; Ilse van Puyenbroeck; Kurt G. Ronse; James E. Lamb; Johan B. C. van der Hilst; Johannes van Wingerden
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Inorganic antireflective coating process for deep-UV lithography
Author(s): Qizhi He; Wei W. Lee; Maureen A. Hanratty; Daty Rogers; Guoqiang Xing; Abha Singh; Eden Zielinski
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Influence of underlayer reflection on optical proximity effects in sub-quarter-micron lithography
Author(s): Atsushi Sekiguchi; Fumikatsu Uesawa; Koichi Takeuchi; Tatsuji Oda
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Deep-UV reflection control for patterning dielectric layers
Author(s): Ramkumar Subramanian; Gurjeet S. Bains; Christopher F. Lyons; Bhanwar Singh; Ernesto Gallardo
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Simulation and experimental evaluation of double-exposure techniques
Author(s): Mark O. Neisser; Antoinette F. Molless
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Illumination pupil filtering using modified quadrupole apertures
Author(s): Bruce W. Smith; Lena Zavyalova; John S. Petersen
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DUV stability of carbon films for attenuated phase-shift mask applications
Author(s): Alessandro Callegari; Katherina Babich; Fuad Doany; Frank Cardone; Sampath Purushothaman
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New projection optical system for beyond 150-nm patterning with KrF and ArF sources
Author(s): Shigeru Hirukawa; Koichi Matsumoto; Kengo Takemasa
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Performance of an i-line step-and-scan system for sub-0.25-um mix-and-match applications
Author(s): Peter van Oorschot; Bert Koek; Jeroen van der Spek; Eric Stuiver; Hans Franken; Herman Botter; Reiner B. Garreis
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Imaging performance of scanning exposure systems
Author(s): Ryuichi Ebinuma; Kazunori Iwamoto; Hiroaki Takeishi; Hiroshi Itoh; Mitsuru Inoue; Kazuhiro Takahashi; Masakatsu Ohta
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Characterization of a next-generation step-and-scan system
Author(s): Timothy J. Wiltshire; Joseph P. Kirk; Donald C. Wheeler; Christopher Obszarny; James T. Marsh; Donald M. Odiwo
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Laser pattern-generation technology below 0.25 um
Author(s): Paul C. Allen
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Assessment of optical coatings for 193-nm lithography
Author(s): Vladimir Liberman; Mordechai Rothschild; Jan H. C. Sedlacek; Ray S. Uttaro; Andrew Grenville; Allen Keith Bates; Chris K. Van Peski
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Damage testing of pellicles for 193-nm lithography
Author(s): Vladimir Liberman; Roderick R. Kunz; Mordechai Rothschild; Jan H. C. Sedlacek; Ray S. Uttaro; Andrew Grenville; Allen Keith Bates; Chris K. Van Peski
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Alignment performance versus mark quality
Author(s): Joseph P. Kirk; Jung H. Yoon; Timothy J. Wiltshire
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High-accuracy alignment based on subspace decomposition
Author(s): Amir Aalam Ghazanfarian; Xun Chen; Mark A. McCord; Roger Fabian W. Pease
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Impacts of reticle and wafer elasticity control on overall alignment management strategy
Author(s): Etsuya Morita; Masaharu Kawakubo; Frank C. Leung; Sean J. McNamara; Joseph T. Parry
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Proposal of a composite phase-shifting mask for 0.15-um hole-pattern delineation using KrF exposure
Author(s): Norio Hasegawa; Katsuya Hayano; Akira Imai; Naoko Asai; Shinji Okazaki
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Optimization of stepper parameters and its design rule for an attenuated phase-shifting mask
Author(s): Hung-Eil Kim; Stanley Barnett; James Shih
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Preventing sidelobe printing in applying attenuated phase-shift reticles
Author(s): Z. Mark Ma; Andrew Andersson
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Resist and oxide thickness effect on process window for 0.2-um contact patterns with off-axis illumination and attenuated phase-shift mask
Author(s): Chuen-Huei Yang; Chang-Ming Dai
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Optimization of DUV photolithography for sub-250-nm technology: contact patterning with attenuated phase-shift mask
Author(s): Lay Cheng Choo; Siu Chung Tam; Alex Cheng; Ida Chui Shan Ho
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New method for improving the practical resolution of complex patterns in sub-half-micron lithography
Author(s): Xunan Chen; Xiangang Luo; HanMin Yao; Qian Xiao; Guobin Yu
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Enhanced microlithography using coated objectives and image duplication
Author(s): Miklos Erdelyi; Zsolt Bor; Gabor Szabo; Frank K. Tittel
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Printing sub-100-nm random logic patterns using binary masks and synthetic-aperture lithography (SAL)
Author(s): Torbjoern Sandstrom
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Optimization of exposure procedures for sub-quarter-micron CMOS applications
Author(s): Shoji Hotta; Toshihiko Onozuka; Keiko Fukumoto; Seiichiro Shirai; Shinji Okazaki
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CD control of ASIC polysilicon gate level
Author(s): Jacek K. Tyminski; Sean J. McNamara; Stephen A. Meisner; Ronald R. Gorham
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Reticle contributions to CD uniformity for 0.25-um DUV lithography
Author(s): Jan Pieter Kuijten; Frank Duray; Ted der Kinderen
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CD control for quarter-micron logic device gates using iso-pitch bias
Author(s): Young-Chang Kim; Gisung Yeo; Hye-soo Shin; Hak Kim; Hoyoung Kang; U-In Chung
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Contributors to focal plane nonuniformity and their impact on linewidth control in DUV step-and-scan system
Author(s): Pradeep K. Govil; James G. Tsacoyeanes; Randell P. Eron; Dave Walters
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Killer defects caused by localized sub-100-nm critical dimension reticle errors
Author(s): Anthony Vacca; Benjamin George Eynon; Steve Yeomans
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Overlay accuracy of reticles
Author(s): Hisatsugu Shirai; Kanji Takeuchi; Kazumasa Shigematsu
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Challenge of 0.3-k1 lithography by optimizing NA/sigma, OAI, biasing, and BARC: practical approach to quarter-micron i-line process
Author(s): KeunYoung Kim; Stanley Barnett; James Shih
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NA optimization of 360-nm and 300-nm pitch devices
Author(s): Hyoungjoon Kim; Sunggi Kim; Chang-Hwan Kim; Jin Hong; Junghyun Lee; Hoyoung Kang; Joo-Tae Moon
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Conformality of photoresist and antireflective coatings over topography
Author(s): James A. Bruce; Ellen Wallander
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Thin-film interference effects for thin resist films on a broadband scanner
Author(s): James A. Bruce; Michael D. Caterer; Dianne L. Sundling
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Optimization of ARC process in DUV lithography
Author(s): Kyung-Jin Shim; Byoung-Il Choi; Ki-Yeop Park; Won-Kyu Lee
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Three-dimensional mask transmission simulation using a single integral equation method
Author(s): Michael S. Yeung; Eytan Barouch
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Use of melting inorganic photoresist for microlens array fabrication
Author(s): Changtai Yu; Fengzhen Guo; Ying Chen; Hua Yu
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Metropole-3D: a rigorous 3D topography simulator
Author(s): Xiaolei Li; Kevin D. Lucas; Aaron L. Swecker; Andrzej J. Strojwas
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Cross-sectional critical shape error: a novel methodology for quantifying process simulation accuracy
Author(s): Mark E. Mason; Robert A. Soper
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High-NA illumination: a simulation study
Author(s): Leonhard Mader; Christoph M. Friedrich
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Novel approximate model for resist process
Author(s): Chang-Nam Ahn; Hee-Bom Kim; Ki-Ho Baik
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Three-dimensional photolithography simulator including rigorous nonplanar exposure simulation for off-axis illumination
Author(s): Heinrich Kirchauer; Siegfried Selberherr
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Development of an integrated 3D lithography simulator
Author(s): Choong-Ki Seo; Seung-Gol Lee; Jong-Ung Lee
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Chip-scale 3D topography synthesis
Author(s): Mariusz Niewczas; Xiaolei Li; Andrzej J. Strojwas; Wojciech P. Maly
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Application of substructuring method to three-dimensional optical lithography simulation
Author(s): Seung-Gol Lee; Choong-Ki Seo; Dong-Hoon Lee; Jong-Ung Lee; MeangHyo S. Cho
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Net-Faim: distributed computation of aerial images
Author(s): Uwe Hollerbach
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Exposure effects on deep-ultraviolet resist thickness
Author(s): Pary Baluswamy; Thomas R. Glass
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Application of artificial neural networks (ANN) and response surface model (RSM) in optical microlithographic process modeling
Author(s): Bo Zhou; Barry A. McPherron
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Coping with the impact of lens aberrations in the context of wavefront engineering
Author(s): Armen Kroyan; David Levenson; Frank K. Tittel
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Effect of lens aberrations as a function of illumination condition on full-field process windows
Author(s): Audrey M. Davis; Andrew E. Bair; Bradley D. Lantz; Jeffrey R. Johnson; Charles R. Spinner
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Measurment of astigmatism in microlithography lenses
Author(s): Joseph P. Kirk
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Influence of aberration on performance during use of resolution enhancement technology
Author(s): Kouichirou Tsujita; Junjiro Sakai; Akihiro Nakae; Shuji Nakao; Wataru Wakamiya
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Differences in pattern displacement error under different illumination conditions
Author(s): Nakgeuon Seong; Jongwook Kye; Hoyoung Kang; Joo-Tae Moon
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Optimal proximity correction: application for flash memory design
Author(s): Y. O. Chen; D. L. Huang; K. T. Sung; J. J. Chiang; M. Yu; F. Teng; Lung Chu; Juan C. Rey; Douglas A. Bernard; Jiangwei Li; Junling Li; V. Moroz; Victor V. Boksha
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Strategy for manipulating the optical proximity effect by postexposure bake processing
Author(s): Tsai-Sheng Gau; Chien-Ming Wang; Chang-Ming Dai
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SEMATECH J111 project: OPC validation
Author(s): Franklin M. Schellenberg; Hua Zhang; Jim Morrow
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Reducing or eliminating line-end shortening and iso/dense bias by tuning NA and sigma
Author(s): Olivier Toublan; Patrick Schiavone
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Benchmarking of software tools for optical proximity correction
Author(s): Angelika Jungmann; Joerg Thiele; Christoph M. Friedrich; Rainer Pforr; Wilhelm Maurer
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New method for optical proximity correction with gray-level serifs
Author(s): Jinglei Du; Qizhong Huang; Yongkang Guo; Zheng Cui
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New distortion metrology using reticle coordinate error
Author(s): Izumi Tsukamoto; Hirohiko Shinonaga
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Application of the Brewster angle illumination technique to eliminate resist-induced alignment errors
Author(s): Xun Chen; Amir Aalam Ghazanfarian; Mark A. McCord; Roger Fabian W. Pease
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Alignment system for ArF excimer-laser-based step-and-scan system
Author(s): Dohoon Kim; Jong-Soo Kim; Yeung Joon Sohn; Jin Hyuk Kwon; Kag Hyeon Lee; Sang-Soo Choi; Hai Bin Chung; Hyung Joun Yoo; Bo Woo Kim
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Laser alignment strictness for optical diffraction effect in lithography processes
Author(s): Hsun-Peng Lin; Chih-Hsiung Lee; Yi-Chyuan Lo; Kuo-Liang Lu
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Design of illumination system for ArF excimer laser step-and-scanner
Author(s): Kag Hyeon Lee; Dohoon Kim; Jong-Soo Kim; Sang-Soo Choi; Hai Bin Chung; Hyung Joun Yoo; Bo Woo Kim
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DUV synchrotron exposure station at CAMD
Author(s): Chantal G. Khan Malek; Volker Saile; J. Michael Klopf; Louis Rupp; Steven Nguyen
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ArF excimer laser for 193-nm lithography
Author(s): Uwe Stamm; Rainer Paetzel; Juergen Kleinschmidt; Klaus Vogler; Wolfgang Zschocke; Igor Bragin; Dirk Basting
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ArF lasers for production of semiconductor devices with CD<0.15 um
Author(s): Thomas P. Duffey; Todd J. Embree; Toshihiko Ishihara; Richard G. Morton; William N. Partlo; Tom A. Watson; Richard L. Sandstrom
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Feasibility studies of operating KrF lasers at ultranarrow spectral bandwidths for 0.18-um line widths
Author(s): Alexander I. Ershov; Thomas Hofmann; William N. Partlo; Igor V. Fomenkov; George Everage; Palash P. Das; Dave Myers
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High-spectral-purity and high-durability kHz KrF excimer laser with advanced rf preionization discharge
Author(s): Tatsuo Enami; Osamu Wakabayashi; Toshihiro Nishisaka; Natsushi Suzuki; Takashi Nire; Hakaru Mizoguchi; Hiroaki Nakarai; Hirokazu Tanaka; Tatsuya Ariga; Kouji Shio; Takeshi Okamoto; Ryoichi Nodomi; Hitoshi Tomaru; Kiyoharu Nakao
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Stability of optical interference coatings exposed to low-fluence 193-nm ArF radiation
Author(s): Joerg Heber; Roland Thielsch; Holger Blaschke; Norbert Kaiser; Klaus R. Mann; Eric Eva; Uwe Leinhos; Andreas Goertler
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Surface finish and optical quality of CaF2 for UV lithography applications
Author(s): Angela Duparre; Roland Thielsch; Norbert Kaiser; Stefan Jakobs; Klaus R. Mann; Eric Eva
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Characterizing the absorption and aging behavior of DUV optical material by high-resolution excimer laser calorimetry
Author(s): Klaus R. Mann; Eric Eva
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Chromatic aberration-free TTL alignment system for 193-nm step-and-scan exposure system by using phase conjugate waves
Author(s): Jin Hyuk Kwon; Yeung Joon Sohn; Hyo Chang Hwang; Dohoon Kim; Hai Bin Chung
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New variable-transmission illumination technique optimized with design rule criteria
Author(s): Raymond A. Cirelli; Masis M. Mkrtchyan; Pat G. Watson; Lee E. Trimble; Gary R. Weber; David L. Windt; Omkaram Nalamasu
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Improvement of overlay in the oxide- and W-chemical-mechanical polish processes
Author(s): Sen-Shan Yang
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Reformulation for latent image formation model in photolithography using numerical absorbing boundary condition
Author(s): In-Ho Park; Hye-Keun Oh; S. B. Hyun
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Modifications of polymeric ARC films by UV irradiation
Author(s): Ronald A. Carpio; Alan Stephen; Jeffrey A. Eisele
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