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Proceedings of SPIE Volume 3333

Advances in Resist Technology and Processing XV
Editor(s): Will Conley
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Volume Details

Volume Number: 3333
Date Published: 29 June 1998
Softcover: 142 papers (1500) pages
ISBN: 9780819427786

Table of Contents
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Polymer design in surface modification resist process for ArF lithography
Author(s): Takahiro Matsuo; Masayuki Endo; Shigeyasu Mori; Koichi Kuhara; Masaru Sasago; Masamitsu Shirai; Masahiro Tsunooka
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Design of cycloolefin-maleic-anhydride resist for ArF lithography
Author(s): Jae Chang Jung; Cheol-Kyu Bok; Ki-Ho Baik
Show Abstract
ArF single-layer photoresists based on alkaline-developable ROMP-H resin
Author(s): Mitsuhito Suwa; Haruo Iwasawa; Toru Kajita; Masafumi Yamamoto; Shin-Ichiro Iwanaga
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Deblocking reaction of chemically amplified ArF positive resists
Author(s): Mitsuharu Yamana; Toshiro Itani; Hiroshi Yoshino; Shuichi Hashimoto; Hiroyoshi Tanabe; Kunihiko Kasama
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Adhesion characteristics of alicyclic polymers for use in ArF excimer laser lithography
Author(s): Kaichiro Nakano; Shigeyuki Iwasa; Katsumi Maeda; Etsuo Hasegawa
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Novel strategy for the design of highly transparent ArF resists with excellent dry etch resistance
Author(s): Wenwei Zhao; Takeshi Ohfuji; Masaru Sasago; Seiichi Tagawa
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Discrimination enchancement in polysilsesquioxane-based positive resists for ArF lithography
Author(s): Jun Hatakeyama; M. Nakashima; I. Kaneko; Shigehiro Nagura; Toshinobu Ishihara
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193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids
Author(s): Francis M. Houlihan; Janet M. Kometani; Allen G. Timko; Richard S. Hutton; Raymond A. Cirelli; Elsa Reichmanis; Omkaram Nalamasu; Allen H. Gabor; Arturo N. Medina; John J. Biafore; Sydney G. Slater
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New approach to 193-nm photoresists: polyspironorbornane polymers
Author(s): Robert P. Meagley; Linus Y. Park; Jean M. J. Frechet
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Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method
Author(s): Naomi Shida; Takeshi Okino; Koji Asakawa; Tohru Ushirogouchi; Makoto Nakase
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Design and study of water-soluble positive- and negative-tone imaging materials
Author(s): Jennifer M. Havard; Dario Pasini; Jean M. J. Frechet; David R. Medeiros; Kyle Patterson; Shintaro Yamada; C. Grant Willson
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Reactive ion etching of 193-nm resist candidates: current platforms and future requirements
Author(s): Thomas I. Wallow; Phillip J. Brock; Richard A. Di Pietro; Robert D. Allen; Juliann Opitz; Ratnam Sooriyakumaran; Donald C. Hofer; Jeff Meute; Jeff D. Byers; Georgia K. Rich; Martin McCallum; S. Schuetze; Saikumar Jayaraman; Karen A. Hullihen; Richard Vicari; Larry F. Rhodes; Brian L. Goodall; Robert A. Shick
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Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography
Author(s): Thomas Steinhaeusler; Allen H. Gabor; Daniela White; Andrew J. Blakeney; David R. Stark; Daniel A. Miller; Georgia K. Rich; Victoria L. Graffenberg; Kim R. Dean
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Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography
Author(s): Daniela White; Bernard T. Beauchemin; Andrew J. Blakeney; Thomas Steinhaeusler
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Lithographic performance of a dry-etch stable methacrylate resist at 193 nm
Author(s): Ralph R. Dammel; Stanley A. Ficner; Joseph E. Oberlander; Axel Klauck-Jacobs; Munirathna Padmanaban; Dinesh N. Khanna; Dana L. Durham
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Dual-wavelength photoresist for sub-200-nm lithography
Author(s): Stefan Hien; Guenther Czech; Wolf-Dieter Domke; Hans Raske; Michael Sebald; Iris Stiebert
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Progress in 193-nm top-surface imaging process development
Author(s): John M. Hutchinson; Veena Rao; Guojing Zhang; Adam Richard Pawloski; Carlos A. Fonseca; Janet Chambers; Susan M. Holl; Siddhartha Das; Craig C. Henderson; David R. Wheeler
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Processing of acrylate-based 193-nm resists: influence of physico-chemical properties
Author(s): Benedicte P. Mortini; Charles Rosilio; Alain Prola; Patrick Jean Paniez
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Negative-tone TSI process for 193-nm lithography
Author(s): Koichi Kuhara; Shigeyasu Mori; Yuko Kaimoto; Taku Morisawa; Takeshi Ohfuji; Masaru Sasago
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Effect of the dissolution contrast on process margins in 193-nm lithography
Author(s): Makoto Takahashi; Shinji Kishimura; Takuya Naito; Takeshi Ohfuji; Masaru Sasago
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Chemical and lithographic aspects of organic deep-UV BARCs
Author(s): Munirathna Padmanaban; Wen-Bing Kang; Ken Kimura; Yoshino Nishiwaki; Georg Pawlowski; Hatsuyuki Tanaka
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Positive bilayer resists for 248- and 193-nm lithography
Author(s): Ratnam Sooriyakumaran; Gregory M. Wallraff; Carl E. Larson; Debra Fenzel-Alexander; Richard A. Di Pietro; Juliann Opitz; Donald C. Hofer; Douglas C. LaTulip; John P. Simons; Karen E. Petrillo; Katherina Babich; Marie Angelopoulos; Qinghuang Lin; Ahmad D. Katnani
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Deep-ultraviolet antireflective coating with improved conformality, optical density, and etch rate
Author(s): Douglas J. Guerrero; James D. Meador; Gu Xu; Hitoshi Suzuki; Yasuhisa Sone; Vandana N. Krishnamurthy; James B. Claypool; James E. Lamb
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Choice of amines as stabilizers for chemically amplified resist systems
Author(s): Lawrence Ferreira; Sanjay Malik; Thomas R. Sarubbi; Andrew J. Blakeney; Brian Maxwell
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Positive- and negative-tone water-processable photoresists: a progress report
Author(s): Shintaro Yamada; David R. Medeiros; Kyle Patterson; Wei-Lun K. Jen; Timo Rager; Qinghuang Lin; Carlos Lenci; Jeff D. Byers; Jennifer M. Havard; Dario Pasini; Jean M. J. Frechet; C. Grant Willson
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Modeling parameter extraction for DNQ-novolak thick film resists
Author(s): Clifford L. Henderson; Steven A. Scheer; Pavlos C. Tsiartas; Benjamen M. Rathsack; John P. Sagan; Ralph R. Dammel; Andreas Erdmann; C. Grant Willson
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Probabilistic model for the mechanism of phenolic polymer dissolution
Author(s): Lewis W. Flanagin; Christopher L. McAdams; Pavlos C. Tsiartas; Clifford L. Henderson; William D. Hinsberg; C. Grant Willson
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Extension of 248-nm optical lithography: a thin film imaging approach
Author(s): Qinghuang Lin; Ahmad D. Katnani; Timothy A. Brunner; Charlotte DeWan; Cindy Fairchok; Douglas C. LaTulipe; John P. Simons; Karen E. Petrillo; Katherina Babich; David E. Seeger; Marie Angelopoulos; Ratnam Sooriyakumaran; Gregory M. Wallraff; Donald C. Hofer
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Study of bake mechanisms by real-time in-situ ellipsometry
Author(s): Patrick Jean Paniez; Aime Vareille; Patrice Ballet; Benedicte P. Mortini
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Can sub-0.18-um FEOL be realized in production with KrF DUV?
Author(s): Wendy F.J. Gehoel-van Ansem; Peter Zandbergen; Jos de Klerk
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Resist edge roughness with reducing pattern size
Author(s): Eishi Shiobara; Daisuke Kawamura; Kentaro Matsunaga; Toru Koike; Shoji Mimotogi; Tsukasa Azuma; Yasunobu Onishi
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Inorganic bottom ARC SiOxNy for interconnection levels on 0.18-um technology
Author(s): Yorick Trouiller; N. Buffet; Thierry Mourier; Yveline Gobil; Patrick Schiavone; Yves Quere
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Novel antireflective structure for metal layer patterning
Author(s): Sang-Soo Choi; Han Sun Cha; Jong-Soo Kim; Jong Mun Park; Dohoon Kim; Kag Hyeon Lee; Jin-Ho Ahn; Hai Bin Chung; Bo Woo Kim
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Advance of resist profile control in multilayer resist process for sub-150-nm lithography
Author(s): Yasuki Kimura; Hiroyuki Endo; Akihiro Endo
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Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists
Author(s): Will Conley; Carl P. Babcock; Nigel R. Farrar; Hua-Yu Liu; Bill Peterson; Kazuo Taira
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Application of plasma-polymerized methylsilane for 0.18-um photolithography
Author(s): Cedric Monget; Carol Y. Lee; Olivier P. Joubert; Gilles R. Amblard; Timothy W. Weidman; Dian Sugiarto; John W. Yang; F. Cormont; R. L. Inglebert
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Effect of resin molecular weight on novolak dissolution
Author(s): Hsiao-Yi Shih; Huifang Zhuang; Arnost Reiser; Paula M. Gallagher-Wetmore
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Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group
Author(s): Katsuji Douki; Toru Kajita; Shin-Ichiro Iwanaga
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Control of acidity of the substrate for precise pattern fabrication using a chemically amplified resist
Author(s): Isao Satou; Sachiko Yabe; Minoru Watanabe; Takashi Taguchi
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Effects of a visualization dye in a thick film photoresist
Author(s): Kathryn H. Jensen; Stanley A. Ficner
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New development model: aggregate extraction development
Author(s): Toru Yamaguchi; Hideo Namatsu; Masao Nagase; Kenji Yamazaki; Kenji Kurihara
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Proximity bias swing: origin and characterization
Author(s): Peter Zandbergen; Wendy F.J. Gehoel-van Ansem; Jos de Klerk; Geert Vandenberghe; Frank T.G.M. Linskens
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Resist deposition without spinning by using novel inkjet technology and direct lithography for MEMS
Author(s): Gokhan Percin; Tom Hyongsok Soh; Butrus T. Khuri-Yakub
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Novel ArF photoresist system using acrylic polymer
Author(s): Bang-Chein Ho; Jui-Fa Chang; Ting-Chung Liu; Jian-Hong Chen
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Techniques for the analysis of Cl- ion in TMAH
Author(s): Bang-Chein Ho; Mong-Ling Chang; Yu-Ping Lin
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Image reversal at nm scales
Author(s): Saleem H. Zaidi; Xiaolan Chen; Steven R. J. Brueck
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Improved positive surface modification resist process for 193-nm lithography
Author(s): Masayuki Endo; Takahiro Matsuo; Shigeyasu Mori; Taku Morisawa; Koichi Kuhara; Masaru Sasago; Masamitsu Shirai; Masahiro Tsunooka
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New design principle for the PACs of novolak resists
Author(s): Salil Jha; Arnost Reiser
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Examination of develop puddle time and its effects on lithographic performance
Author(s): Mark S. Markowski
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Application of a bilayer silylated resist process in volume production
Author(s): Robert Franzen; Andreas Grassmann; Markus Kirschinger; Thorsten Schedel; Harald Wiedenhofer; Markus Witte
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Contrast enhancement by alkali decomposable additives in quinonediazide-type positive resists
Author(s): Yasunori Uetani; Jun Tomioka; Hiroshi Moriuma; Yoshiko Miya
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Chemistry of photoresist reclamation
Author(s): Hideki Nishida; Yoriko Nagao; Akihiko Igawa
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Standard developer available ArF resist and performance
Author(s): Yasunori Uetani; Hiroaki Fujishima; Yoshiko Miya; Ichiki Takemoto
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Resin fractionation effect for photoresist performance
Author(s): Tatsuya Yamada; Yutaka Saito; Kunio Itoh
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Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography
Author(s): Masafumi Asano; Yumiko Maruyama; Toru Koike; Kenji Chiba; Eishi Shiobara; Takahiro Ikeda
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Novel single-layer photoresist containing cycloolefins for 193 nm
Author(s): Joo Hyeon Park; Dong-Chul Seo; Ki-Dae Kim; Sun-Yi Park; Seong-Ju Kim; Hosull Lee; Jae Chang Jung; Cheol-Kyu Bok; Ki-Ho Baik
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Novolak resin analogs for resist applications
Author(s): Stan F. Wanat; Kathryn H. Jensen; Ping-Hung Lu; Douglas S. McKenzie
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Novel novolak block copolymers for advanced i-line resists
Author(s): Stan F. Wanat; M. Dalil Rahman; Sunit S. Dixit; Ping-Hung Lu; Douglas S. McKenzie; Michelle M. Cook
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Optimization and characterization of ultrathick photoresist films
Author(s): Warren W. Flack; Warren P. Fan; Sylvia White
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Material design and lithographic performance of novel hydroxystyrene copolymer-based DUV negative resists
Author(s): Takanori Kudo; Kayo Aramaki; Seiya Masuda; Georg Pawlowski
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Analysis of resist pattern collapse and optimization of DUV process for patterning sub-0.20-um gate line
Author(s): Jeong Yun Yu; Goo-Min Jeong; Hoon Huh; Jaejeong Kim; Sang-Pyo Kim; Jae-Keun Jeong; Hong-Seok Kim
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Method to measure ethylene oxide/propylene oxide surfactants in resist developers
Author(s): Rodica Holt; Joseph E. Oberlander; Maria Fides Y. Calindas; Eleazar Gonzalez; Pilarcita L. Ranque
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Synthesis of diazonaphthoquinone (DNQ) photoactive compounds (PACs) using ion exchange resins
Author(s): Joseph E. Oberlander; Eleazar Gonzalez
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Tailoring of isolation structures with top-surface imaging process by silylation
Author(s): Hyoung-Gi Kim; Myoung-Soo Kim; Cheol-Kyu Bok; Byung-Jun Park; Jin-Woong Kim; Ki-Ho Baik; Dai-Hoon Lee
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Compatibility of chemically amplified photoresists with bottom antireflective coatings
Author(s): Hiroshi Yoshino; Toshiro Itani; Shuichi Hashimoto; Mitsuharu Yamana; Tsuyoshi Yoshii; Hiroyoshi Tanabe
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Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography
Author(s): Shigeyuki Iwasa; Kaichiro Nakano; Katsumi Maeda; Etsuo Hasegawa
Show Abstract
Lithographic evaluation of deep-UV photoresists for 0.25- and 0.18-um technology design rules
Author(s): Gilles R. Amblard
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Minimizing photoresist dispense volumes on organic antireflective layers: the effects of chemistry and coating methodology on defect size and density
Author(s): Andrew E. Bair; Audrey M. Davis; Bradley D. Lantz; Jeffrey R. Johnson; Charles R. Spinner; Steve Tanner; Von Jerick T. Marcos; Hiroshi Matsui
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Influence of salting-out effect in ArF resist development
Author(s): Yasuhiro Yoshida; Teruhiko Kumada; Atsuko Sasahara; Atsushi Oshida; Hiroshi Adachi
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Sensitivity and image quality of resists with electron-beam, ion-beam, and optical exposure
Author(s): Nicholas N. Rau; Andrew R. Neureuther; Taro Ogawa; Randall L. Kubena; Fred P. Stratton; Charles H. Fields; C. Grant Willson
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Recent advances in increasing the thermal flow resistance of acetal derivatized polyhydroxystyrene deep-UV matrix resins
Author(s): Janet M. Kometani; Francis M. Houlihan; Allen G. Timko; Omkaram Nalamasu; Elsa Reichmanis; Sharon A. Heffner; Mary E. Galvin-Donoghue
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Photoacid generation in chemically amplified resists: elucidation of structural effects of photoacid generators using new acid-sensitive dyes for monitoring acid generation
Author(s): James F. Cameron; J. Michael Mori; Thomas M. Zydowsky; Doris Kang; Roger F. Sinta; Matthew King; Juan C. Scaiano; Gerd Pohlers; Susan Virdee; Terry Connolly
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Development of DUV resist formulations with excellent performance on metal substrates
Author(s): Martha M. Rajaratnam; James F. Cameron; Jacque H. Georger; Doris Kang; Gregory P. Prokopowicz; Roger F. Sinta; James W. Thackeray
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Lithographic characteristics of 193-nm resists imaged at 193 and 248 nm
Author(s): Juliann Opitz; Robert D. Allen; Thomas I. Wallow; Gregory M. Wallraff; Donald C. Hofer
Show Abstract
New approaches to production-worthy 193-nm photoresists based on acrylic copolymers
Author(s): Thomas I. Wallow; Robert D. Allen; Juliann Opitz; Richard A. Di Pietro; Phillip J. Brock; Ratnam Sooriyakumaran; Donald C. Hofer
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Design of an etch-resistant cyclic olefin photoresist
Author(s): Robert D. Allen; Juliann Opitz; Thomas I. Wallow; Richard A. Di Pietro; Donald C. Hofer; Saikumar Jayaraman; Karen A. Hullihan; Larry F. Rhodes; Brian L. Goodall; Robert A. Shick
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Etch integration issues in the development of deep submicron contacts utilizing DUV resist and organic BARC
Author(s): Viswanathan Ramanathan; Shixiong Chen; Kafai Lai; Maureen R. Brongo; Nandasiri Samarakone
Show Abstract
Acid diffusion in a chemically amplified negative i-line photoresist
Author(s): Judy Connolly; K. Rex Chen; Ranee W. Kwong; Margaret C. Lawson; Leo L. Linehan; Wayne M. Moreau
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Photoresist ultrafiltration optimization
Author(s): George M. Jordhamo; Ian Melville; Ann Marie Mewherter
Optimization of optical parameters for a critical i-line resist system
Author(s): Rosemary Bell
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Effect of processing on surface roughness for a negative-tone chemically amplified resist exposed by x-ray lithography
Author(s): Geoffrey W. Reynolds; James Welch Taylor
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Structural basis for high thermal stability of a resist
Author(s): Sanjay Malik; Andrew J. Blakeney; Lawrence Ferreira; Medhat A. Toukhy; John E. Ferri
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Real-time amine monitoring and its correlation to critical dimension control of chemically amplified resists for sub-0.25-um geometries
Author(s): Will Conley; Carl P. Babcock; John A. Lilygren; Clifford P. Sandstrom; Nigel R. Farrar; John Piatt; Devon A. Kinkead; William Goodwin; Oleg P. Kishkovich; John K. Higley; Phil Cate
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Process and performance optimization of bottom antireflective coatings
Author(s): Shuji Ding; Ping-Hung Lu; Jianhui Shan; Eleazar Gonzalez; Salem Mehtsun; Sunit S. Dixit; Dinesh N. Khanna
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Monitoring and controlling synthesis of bottom antireflective coating materials by in-situ FT-IR technique
Author(s): Shuji Ding; Jianhui Shan; Dinesh N. Khanna
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Deposition of trace metals to a wafer surface from lithography materials
Author(s): Rob W. Ramage; Rita Vos; Marc Meuris; Marcel Lux
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Resist cluster formation model and development simulation
Author(s): Kazuya Kamon; Keisuke Nakazawa; Atsuko Yamaguchi; Nobuyuki N. Matsuzawa; Takeshi Ohfuji; Masaru Sasago; Ken ichi Kanzaki; Seiichi Tagawa
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Taguchi method applied in optimization of Shipley SJR 5740 positive resist deposition
Author(s): Allan P. Hui; Julian O. Blosiu; Dean V. Wiberg
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Dissolution of phenolic polymers in aqueous base: the influence of polymer structure
Author(s): Christopher L. McAdams; Lewis W. Flanagin; Clifford L. Henderson; Adam R. Pawlowski; Pavlos C. Tsiartas; C. Grant Willson
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Effects of structural differences in speed enhancers (dissolution promoters) on positive photoresist composition
Author(s): Michelle M. Cook; M. Dalil Rahman; Ping-Hung Lu
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Novolak resin for ultrafast high-resolution positive i-line photoresist compositions
Author(s): M. Dalil Rahman; Ping-Hung Lu; Michelle M. Cook; Woo-Kyu Kim; Dinesh N. Khanna
Show Abstract
Effects of underlayer on performance of bilayer resists for 248-nm lithography
Author(s): Katherina Babich; Alessandro Callegari; Karen E. Petrillo; John P. Simons; Douglas C. LaTulipe; Marie Angelopoulos; Qinghuang Lin
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Some aspects of thick-film resist performance and modeling
Author(s): Andreas Erdmann; Clifford L. Henderson; C. Grant Willson; Ralph R. Dammel
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Photoacid generators in chemically amplified resists
Author(s): Yasuhiro Suzuki; Donald W. Johnson
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High-performance profiles and characteristics of chemically amplified resist
Author(s): Hideaki Mochizuki; Hiroshi Tomiyasu; Yasuhiro Kameyama; Michinori Tsukamoto; Takaaki Niinomi; Yuki Tanaka; Jun Fujita; Tameichi Ochiai
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Lithographic evaluation of a new high-performance photoresist composition
Author(s): Warren Montgomery; Neal P. Callan; Alan E. Kozlowski
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Footing reduction of positive deep-UV photoresists on plasma-enhanced ARL (PE ARL) SiON substrates
Author(s): Lori Anne Joesten; Matthew L. Moynihan; Tracy K. Lindsay; Michael T. Reilly; Kathy Konjuh; David Mordo; Kenneth P. MacWilliams; Srini Sundararajan
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Characterization of low-viscosity photoresist coating
Author(s): Murthy S. Krishna; John W. Lewellen; Gary E. Flores
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Improving the performance of 193-nm photoresists based on alicyclic polymers
Author(s): Kyle Patterson; Uzodinma Okoroanyanwu; Tsutomu Shimokawa; Sungseo Cho; Jeff D. Byers; C. Grant Willson
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Monitoring photoacid generation in chemically amplified resist systems
Author(s): Uzodinma Okoroanyanwu; Jeff D. Byers; Ti Cao; Stephen E. Webber; C. Grant Willson
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Advanced negative resists using novel aminoplast crosslinkers
Author(s): Ali Afzali-Kushaa; Jeffrey D. Gelorme; Laura L. Kosbar; Mark O. Neisser; W. Brunswold; Christopher Feild; Margaret C. Lawson; Pushkara Rao Varanasi
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High-silicon-concentration TSI process for 193-nm lithography
Author(s): Shigeyasu Mori; Taku Morisawa; Nobuyuki N. Matsuzawa; Yuko Kaimoto; Masayuki Endo; Takahiro Matsuo; Koichi Kuhara; Takeshi Ohfuji; Masaru Sasago
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Recent advantages of bilevel resists based on silsesquioxane for ArF lithography
Author(s): Taku Morisawa; Nobuyuki N. Matsuzawa; Shigeyasu Mori; Yuko Kaimoto; Masayuki Endo; Takeshi Ohfuji; Koichi Kuhara; Masaru Sasago
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Theoretical calculations of silylation reaction of photoresists
Author(s): Nobuyuki N. Matsuzawa; Shigeyasu Mori; Taku Morisawa; Yuko Kaimoto; Masayuki Endo; Takeshi Ohfuji; Koichi Kuhara; Masaru Sasago
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Dry etching resistance of methacrylate polymers for ArF excimer laser lithography
Author(s): Takeshi Ohfuji; Masayuki Endo; Makoto Takahashi; Takuya Naito; Tetsuya Tatsumi; Koichi Kuhara; Masaru Sasago
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Negative-type chemically amplified resists for ArF excimer laser lithography
Author(s): Takuya Naito; Makoto Takahashi; Takeshi Ohfuji; Masaru Sasago
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Dissolution-rate analysis of ArF resist polymers based on the percolation model
Author(s): Atsuko Yamaguchi; Shinji Kishimura; Nobuyuki N. Matsuzawa; Takeshi Ohfuji; Tomoaki Tanaka; Seiichi Tagawa; Masaru Sasago
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Rapid simulation of silylation and the role of physical mechanisms in profile shapes
Author(s): Marco Antonio Zuniga; Ebo H. Croffie; Andrew R. Neureuther
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Photoresist performance evaluation of implant resist systems
Author(s): David C. Pritchard; Warren Montgomery; James P. Kimball; Jeff A. Albelo
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Advanced ARCH resist
Author(s): N. R. Bantu; J. Marshall; T. Holt; D. Perry; D. Khan
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Lithographic performance of recent DUV photoresists
Author(s): Bob Streefkerk; Koen van Ingen Schenau; Corine Buijk
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Top surface imaging through silylation
Author(s): Sergei V. Postnikov; Mark H. Somervell; Clifford L. Henderson; Steven Katz; C. Grant Willson; Jeff D. Byers; Anwei Qin; Qinghuang Lin
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Chemically amplified resist technology for i-line applications
Author(s): Medhat A. Toukhy; Sanjay Malik; Andrew J. Blakeney; Karin R. Schlicht
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Cleaning techniques for low-K dielectric materials for advanced interconnects
Author(s): Didier Louis; Emile Lajoinie; Douglas Holmes; Shihying Lee; Catherine Peyne
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New model for the effect of developer temperature on photoresist dissolution
Author(s): Chris A. Mack; Mark John Maslow; Atsushi Sekiguchi; Ronald A. Carpio
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Lithographic and chemical contrast of single component top surface imaging (TSI) resists
Author(s): John F. Bohland; Janet Chambers; Siddhartha Das; Theodore H. Fedynyshyn; Susan M. Holl; John M. Hutchinson; Veena Rao; Roger F. Sinta
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Advanced complementary color filter technology without dyeing process for CCD image sensors
Author(s): Hiromitsu Aoki; Kenji Yokozawa; Nobuyuki Waga; Tomoko Ohtagaki; Yoshiaki Nishi; Hirotatsu Kodama; Yoshikazu Sano; Sumio Terakawa
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Effect of end group on novolak resin properties
Author(s): Anthony Zampini; Michael J. Monaghan; Cheng-Bai Xu; William J. Cardin
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New method of determination of the photoresist Dill parameters using reflectivity measurements
Author(s): Patrick Schiavone; Stephane Bach
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Conductive bilevel resist system based on polysilphenylenesiloxane and polyaniline for nanometer lithography
Author(s): Keiji Watanabe; Miwa Igarashi; Ei Yano
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Negative pattern fabrication using laser exposure of positive photoresist
Author(s): Boris Kobrin; Colleen Hagen
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Acid-sensitive arylether-protected poly(4-hydroxystyrene) derivatives for chemically amplified deep-UV positive resists
Author(s): Pushkara Rao Varanasi; Kathleen M. Cornett; Ahmad D. Katnani
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Photoresists using tetrahydropyranyl- and tetrahydrofuranyl-protected styrene maleic anhydride half-ester polymers
Author(s): Wu-Song Huang; Ratnam Sooriyakumaran; Ranee W. Kwong; Ahmad D. Katnani
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Monitoring of lithography modules using defect density inspection systems
Author(s): Dieter Gscheidlen; Elke Hietschold; Eyal Duzi; Erez Ravid
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Polymer-bound sensitizer in i-line resist formulations
Author(s): Premlatha Jagannathan; Charlotte DeWan; Andrew R. Eckert; Rebecca D. Mih; Kathleen Martinek; Charles Richwine; Leo L. Linehan; Wayne M. Moreau; Randolph S. Smith
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New dry-developable chemically amplified photoresist
Author(s): Jin-Baek Kim; Hyun-Woo Kim
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Novel approach to surface imaging
Author(s): Mark A. Spak; Fred Mohr; Ronald Bradbury; Ralph R. Dammel; Jason W. Weigold; Stella W. Pang
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Optimizing image transfer into AZ BARLi bottom coat for submicron i-line lithography
Author(s): Alberto Caligiore; Marco Valtolina; Alberto Cipolli; Arialdo Monguzzi; Fred Mohr; Mark A. Spak; Ralph R. Dammel
Show Abstract
Sub-0.30-um i-line photoresist: formulation strategy and lithographic characterization
Author(s): Jaclyn J. Yu; Catherine C. Meister; Gerald Vizvary; Cheng-Bai Xu; Patricia Fallon
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Resist residue generated on TiN topographic substrates in positive chemically amplified resists
Author(s): Hajime Wada; Akihiro Usujima; Yuichiro Yanagishita; Kenji Nakagawa
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Photoresist and the photoresist/wafer interface with a local thermal probe
Author(s): David S. Fryer; Juan J. de Pablo; Paul F. Nealey
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Feasibility of a CVD-resist-based lithography process at 193-nm wavelength
Author(s): Carol Y. Lee; Siddhartha Das; John W. Yang; Timothy W. Weidman; Dian Sugiarto; Michael P. Nault; David Mui; Zoe A. Osborne
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Process effects resulting from conversion to a safe-solvent organic BARC
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