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PROCEEDINGS VOLUME 3332

Metrology, Inspection, and Process Control for Microlithography XII
Editor(s): Bhanwar Singh
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Volume Details

Volume Number: 3332
Date Published: 8 June 1998
Softcover: 74 papers (760) pages
ISBN: 9780819427779

Table of Contents
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AFM: a valid reference tool?
Author(s): Herschel M. Marchman; Nichole Dunham
Strategy for faster blind reconstruction of tip geometry for scanned probe microscopy
Author(s): John S. Villarrubia
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Metrology methods for the quantification of edge roughness
Author(s): Carla M. Nelson-Thomas; Susan C. Palmateer; Theodore M. Lyszczarz
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Plasma etch process characterization: an application of atomic force microscopy
Author(s): Wenge Yang; Bhanwar Singh
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Ultralow-energy imaging for metrology
Author(s): David C. Joy
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Approach to CD-SEM metrology utilizing the full waveform signal
Author(s): John M. McIntosh; Brittin C. Kane; Jeffery B. Bindell; Catherine B. Vartuli
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Nanometer-level metrology with a low-voltage CD SEM
Author(s): Toshiyuki Yoshimura; Makoto Ezumi; Tadashi Otaka; Hideo Todokoro; Jiro Yamamoto; Tsuneo Terasawa
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Evaluation of scanning electron microscope resolution
Author(s): Aude Maulny; Gilles L. Fanget
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Influence of various factors on charging effects in linewidth metrology
Author(s): Yeong-Uk Ko
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Matching analysis on seven manufacturing CD SEMs
Author(s): Reginald R. Bowley; James E. Beecher; Robert M. Cogley; Sandra R. Dupuis; Dewey L. Farrington
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Some issues in SEM-based metrology
Author(s): David C. Joy
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Subnanometer-precision metrology for 100-nm gate linewidth control
Author(s): Kevin M. Monahan; Craig W. MacNaughton; Waiman Ng; Herschel M. Marchman; Jerry E. Schlesinger
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Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applications
Author(s): Richard A. Allen; Rathindra N. Ghoshtagore; Michael W. Cresswell; Loren W. Linholm; Jeffry J. Sniegowski
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Measuring the size and intensity distribution of SEM beam spot
Author(s): Alex Goldenshtein; Yaron I. Gold; Haim Chayet
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Toward a unified advanced CD-SEM specification for sub-0.18-um technology
Author(s): John A. Allgair; Charles N. Archie; G. William Banke; E. Hal Bogardus; Joseph E. Griffith; Herschel M. Marchman; Michael T. Postek; Lumdas H. Saraf; Jerry E. Schlesinger; Bhanwar Singh; Neal T. Sullivan; Lee E. Trimble; Andras E. Vladar; Arnold W. Yanof
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High-resolution profilometry for improved overlay measurements of CMP-processed layers
Author(s): Anna Mathai; Jason Schneir
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New method of correlating product wafer yield to alignment performance and an optimized accounting method for product wafer alignment
Author(s): Hao Zhou
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Overlay error due to lens coma and asymmetric illumination dependence on pattern features
Author(s): Hiroshi Nomura; Takashi Sato
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Seeing the forest for the trees: a new approach to CD control
Author(s): Christopher P. Ausschnitt; Mark E. Lagus
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Defect inspection and linewidth measurement of SCALPEL thin membrane masks using optical transmission
Author(s): Reginald C. Farrow; Myrtle I. Blakey; Richard J. Kasica; James Alexander Liddle; Masis M. Mkrtchyan; Anthony E. Novembre; Milton L. Peabody; Thomas E. Saunders; David L. Windt; Larry S. Zurbrick; James N. Wiley; Christopher M. Aquino; Steve L. Hentschel; Larry C. Davis; B. Boyer
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Rapid yield learning through optical defect and electrical test analysis
Author(s): Shaun S. Gleason; Kenneth W. Tobin; Thomas P. Karnowski; Fred Lakhani
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SPC tracking and run monitoring of a CD SEM
Author(s): John A. Allgair; Dustin G. Ruehle; Richard C. Elliott; Pedro P. Herrera; John D. Miller
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Ultrasonic cure and temperature monitoring of photoresist during the pre-exposure bake process
Author(s): Susan L. Morton; F. Levent Degertekin; Butrus T. Khuri-Yakub
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In-situ metrology for deep-ultraviolet lithography process control
Author(s): Nickhil H. Jakatdar; Xinhui Niu; John T. Musacchio; Costas J. Spanos
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Optimal temperature profiles for postexposure bake of photoresist
Author(s): Anders Hansson; Stephen P. Boyd
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Ellipsometric scatterometry for sub-0.1-um CD measurements
Author(s): Stephen A. Coulombe; Petre-Catalin Logofatu; Babar K. Minhas; S. Sohail H. Naqvi; John Robert McNeil
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Automated defect inspection: past, present, and future
Author(s): Paul Sandland
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Methodology for the optimization of an i-line lithographic process for defect reduction
Author(s): Khoi A. Phan; Gurjeet S. Bains; David Ashby Steele; Jonathan A. Orth; Ramkumar Subramanian
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Specific defect density: a new approach for defect reduction
Author(s): Venkat R. Nagaswami; Jos van Gessel; Dries van Wezep
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Defect inspection of zero E-field border on i-line 9% PSM
Author(s): Jerry Xiaoming Chen; Franklin D. Kalk
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New particle-inspection system for CMP-planarization-processed metal layers
Author(s): Masami Ikota; Aritoshi Sugimoto; Yuko Inoue; Junichi Taguchi; Tetsuya Watanabe
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Optimal sampling strategies for sub-100-nm overlay
Author(s): Bharath Rangarajan; Michael K. Templeton; Luigi Capodieci; Ramkumar Subramanian; Alec B. Scranton
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Overlay target design characterization and optimization for tungsten CMP
Author(s): Stephen Hsu; Mircea V. Dusa; Joost Vlassak; Cameron Harker; Michelle L. Zimmerman
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Influence of lens aberrations on high-resolution imaging on low-reflectivity substrates
Author(s): Brian Martin; Graham G. Arthur; Christine Wallace
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Refractive-index measurements of photoresist and antireflective coatings with variable angle spectroscopic ellipsometry
Author(s): Ron A. Synowicki; James N. Hilfiker; Ralph R. Dammel; Clifford L. Henderson
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Manufacturability of subwavelength features using reticle and substrate enhancements
Author(s): Martin McCallum; Kevin D. Lucas; John G. Maltabes; Michael E. Kling
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Characterizing optical properties of red, green, and blue color filters for automated film-thickness measurement
Author(s): Feng Yang; Milad Tabet; William A. McGahan
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Optical thin-film decomposition for DUV positive-tone resist process monitoring
Author(s): Xinhui Niu; Nickhil H. Jakatdar; Costas J. Spanos; Joseph J. Bendik; Ronald P. Kovacs
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Measurement of pitch and width samples with the NIST calibrated atomic force microscope
Author(s): Ronald G. Dixson; Rainer G.J. Koening; Theodore V. Vorburger; Joseph Fu; Vincent Wen-Chieh Tsai
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Photomask-edge-roughness characterization using an atomic force microscope
Author(s): Scott E. Fuller; Michael Young
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Developing a method to determine linewidth based on counting the atom spacings across a line
Author(s): Richard M. Silver; Carsten P. Jensen; Vincent Wen-Chieh Tsai; Joseph Fu; John S. Villarrubia; E. Clayton Teague
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Scanning force microscope using point diffraction interferometer
Author(s): Xu-Dong Mou; Yifeng You; Yongmo Zhuo; Yongying Yang; Ming Xu
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Advanced surface inspection techniques for SOI wafers
Author(s): Mari Nozoe; Aritoshi Sugimoto; Takahide Ikeda
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Advances in characterizing SiON for 0.18- and 0.25-um technologies
Author(s): A. Rahim Forouhi; George G. Li; Iris Bloomer
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Accuracy and traceability in dimensional measurements
Author(s): James E. Potzick
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Monte Carlo simulations of electron-beam/solid interactions as an aid in interpretation of EDS and auger analysis of particles and defects
Author(s): Jeffrey R. Kingsley; David W. Harris
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Examination of several novel approaches for the measurement of two-dimensional roughness of sidewalls of high-aspect-ratio patterns using the atomic force microscope
Author(s): Jeffrey R. Kingsley; Robert J. Plano; Kuo-Jen Chao
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Fast-etch antireflective coating for sub-0.35-um i-line microlithography applications
Author(s): Paul Williams; Xie Shao; James E. Lamb; Colin Hester; Tony D. Flaim
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Limitation of CD AFM on resist foot detection
Author(s): Bo Su; K. C. Rajkumar; Mahesh Agrawal
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Optical scatterometry of quarter-micron patterns using neural regression
Author(s): Joerg Bischoff; Joachim J. Bauer; Ulrich Haak; Lutz Hutschenreuther; Horst Truckenbrodt
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Comparison of recent development models in optical lithography simulation
Author(s): Graham G. Arthur; Christine Wallace; Brian Martin
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Contamination monitoring for ammonia, amines, and acid gases utilizing ion mobility spectroscopy (IMS)
Author(s): Tad Bacon; Kurt Webber; Ronald A. Carpio
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Precision improvement for the calibration of submicron dimension reference for electron-beam metrology system
Author(s): Beomhoan O; Byong Chon Park; Yeong-Uk Ko
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Evaluation of the KLA-Tencor 2138 for line monitoring applications
Author(s): Brian Metteer; James F. Garvin; Frank Cataldi; Albert Ng; Jon Button; Robyn Newell; Mike D. Rodriguez; Arlisa Miller
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Characterization of a chemically amplified photoresist for simulation using a modified "poor man's DRM" methodology
Author(s): Nickhil H. Jakatdar; Xinhui Niu; Costas J. Spanos
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Characterization of a positive chemically amplified photoresist for process control
Author(s): Nickhil H. Jakatdar; Xinhui Niu; Costas J. Spanos; Andrew R. Romano; Joseph J. Bendik; Ronald P. Kovacs; Stephen L. Hill
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Definition and control of contact holes in a CMP process
Author(s): Christine Wallace; Brian Martin; Graham G. Arthur
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Reticle defect printability and photoresist modeling of contact structures
Author(s): Warren W. Flack; Dan L. Schurz; Richard B. Lee; Calvin Ho
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SEM image sharpening by reversing the effect of a nonideal beam spot
Author(s): Yaron I. Gold; Alex Goldenshtein
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Competitive assessment of 200-mm epitaxial silicon wafer flatness
Author(s): Howard R. Huff; D. W. McCormack
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TIS characterization of surface roughness
Author(s): Jeff A. Blau; Robert Pagliaro; Tod F. Schiff
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Photoresist focus exposure matrix (FEM) measurements using critical-dimension atomic force microscopy (CD AFM)
Author(s): A. Meyyappan; Sylvain Muckenhirn
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Critical-dimension atomic force microscope (CD-AFM) measurement of masks
Author(s): Sylvain Muckenhirn; A. Meyyappan
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Parameter extraction with neural networks
Author(s): Luca Cazzanti; Mumit Khan; Franco Cerrina
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Sampling requirements for the analysis of misregistration
Author(s): Ramkumar Subramanian; William D. Heavlin; Eileen M. Coons; Bharath Rangarajan
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Nitride film surface properties to reduce nitride residue
Author(s): Fu-Tien Weng; Chih-Hsiung Lee; Kuo-Liang Lu; Yeong-Pey Chyn
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Relation between film character and wafer alignment: critical alignment issues on HV device for VLSI manufacturing
Author(s): Yi-Chuan Lo; Chih-Hsiung Lee; Hsun-Peng Lin; Chiou-Shian Peng
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Comparing inorganic and organic BARC for a deep submicron gate patterning and etch
Author(s): Julia M. Wu; Sagar Kekare; Karen Fox; Kafai Lai; Nandasiri Samarakone
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Efficient and cost-effective photo defect monitoring
Author(s): Khoi A. Phan; Robert Jue Chiu; Shobhana Punjabi; Bhanwar Singh
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Trace contaminants from photoresist materials by modern spectrometry determination
Author(s): Dumitru Gh. Ulieru
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Implementation of a closed-loop CD and overlay controller for sub-0.25-um patterning
Author(s): John L. Sturtevant; Michele R. Weilemann; Kent G. Green; John Dwyer; Eric Robertson; Robert R. Hershey
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Measurement of contamination rate and stage drift in scanning electron microscopes
Author(s): Andras E. Vladar
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Elimination of bottom-pinching effect in environmentally stable chemically amplified resists
Author(s): Choi Pheng Soo; Ming Hui Fan; Antony J. Bourdillon; Lap Hung Chan
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Application of scanning thermal microscopy to the study of thermophysical properties of ultrathin photoresist films
Author(s): Fernando A. Escobedo; David S. Fryer; Juan J. de Pablo
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