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PROCEEDINGS VOLUME 3287

Photodetectors: Materials and Devices III
Editor(s): Gail J. Brown
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Volume Details

Volume Number: 3287
Date Published: 8 April 1998
Softcover: 41 papers (368) pages
ISBN: 9780819427267

Table of Contents
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Narrow-gap semiconductor photodiodes
Author(s): Antoni Rogalski; Manijeh Razeghi
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InAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detection
Author(s): Frank Fuchs; U. Weimar; E. Ahlswede; Wilfried Pletschen; J. Schmitz; Martin Walther
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Mid-infrared photodetectors based on the InAs/InGaSb type-II superlattices
Author(s): C.H. Thompson Lin; Gail J. Brown; W. C. Mitchel; Mohamad Ahoujja; Frank Szmulowicz
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Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors
Author(s): Hooman Mohseni; Erick J. Michel; Manijeh Razeghi; W. C. Mitchel; Gail J. Brown
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Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications
Author(s): Charles B. Morrison; Andreas P. Glinz; Zheng Zhu; James H. Bechtel; Steven M. Frimel; Kenneth P. Roenker
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Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)
Author(s): Serguei An; W. R. Clark; M. Jamal Deen; Anthony S. Vetter; M. Svilans
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Photoelectric performance degradation of several laser-irradiated Si detectors
Author(s): Jean-Pierre Moeglin; Bernard Gautier; Rene C. Joeckle; Dominique Bolmont
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Ultrafast electronic processes in CVD diamonds and GaAs: picosecond photoconductivity and high-voltage switching
Author(s): Serge V. Garnov; Sergei M. Klimentov; Sergej M. Pimenov; Vitali I. Konov; V. V. Kononenko; Olga G. Tsarkova; S. Gloor; Willy A.R. Luethy; Heinz P. Weber
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Strain-compensated InGaAs/AlGaAsP quantum well intersubband photodetectors for mid-IR wavelengths
Author(s): Kenneth L. Bacher; Amy W.K. Liu; Y. Wu; T. Stewart
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Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors
Author(s): Sang-Kee Si; Sung-June Kim; Ju-Han Lee; Deok Ho Yeo; Kyung-Hun Yoon
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Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors
Author(s): Christopher Louis Jelen; Steven Slivken; Thibaut David; Gail J. Brown; Manijeh Razeghi
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Impurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectors
Author(s): Alex Siew-Wan Lee; E. Herbert Li; R. P. Gamani Karunasiri
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The Bi/Bi1-xSbx multiquantum well structure
Author(s): Xinjian Yi; Xinyu Zhang; Yi Li; Jianhua Hao; Xing-Rong Zhao
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Corrugated QWIP array fabrication and characterization
Author(s): Kwong-Kit Choi; Arnold C. Goldberg; Naresh C. Das; Murzy D. Jhabvala; Robert B. Bailey; Kadri Vural
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Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths
Author(s): Zane A. Shellenbarger; Michael G. Mauk; Jeffrey A. Cox; Joseph South; Joseph D. Lesko; Paul E. Sims; Murzy D. Jhabvala; Marilyn K. Fortin
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Silicon JFETs for cryogenic applications
Author(s): Naresh C. Das; Sachidananda Babu; Murzy D. Jhabvala
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Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots
Author(s): Venkatesh Narayanamurti
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P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices
Author(s): Hui Chun Liu; L. Li; Louis B. Allard; Margaret Buchanan; Zbigniew R. Wasilewski; Gail J. Brown; Frank Szmulowicz; S. M. Hegde
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Noise and photoconductivity in single quantum well infrared photodetectors
Author(s): Maxim Ershov; Alexander N. Korotkov
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Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well
Author(s): A. F. M. Anwar; Kevin R. Lefebvre
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GaN/AlGaN UV photodiodes and phototransistors
Author(s): Wei Yang; Thomas Nohava; S. Krishnankutty; Robert Torreano; Scott A. McPherson; Holly A. Marsh
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Megahertz bandwidth AlxGa1-xN/GaN-based p-i-n detectors
Author(s): Gary A. Smith; Michael J. Estes; Tuoc Dang; Arnel A. Salvador; Zhifang Fan; Guangyu Xu; Andrei Botchkarev; Hadis Morkoc; P. Wolf
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Comparison of GaN Schottky barrier and p-n junction photodiodes
Author(s): Michal Janusz Malachowski; Antoni Rogalski
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GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
Author(s): Patrick Kung; Xiaolong Zhang; Danielle Walker; Adam W. Saxler; Manijeh Razeghi
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Computational materials science: an increasingly reliable engineering tool (example: defects in HgCdTe alloys)
Author(s): Arden Sher; M. van Schilfgaarde; M. A. Berding
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Epitaxial structures for reduced cooling of high-performance infrared detectors
Author(s): Tim Ashley; Neil T. Gordon
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Strain effects in CdTe(111) layers on tilted Si(100) substrate by MBE
Author(s): Tae Won Kang; J. H. Leem; Y. B. Hou; H. C. Jeon; J. K. Hyun; Ho-Young Lee; Myung-Soo Han; Suk-Ryong Hahn
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Novel InTlSb and InSbBi alloys for uncooled photodetector applications
Author(s): J. J. Lee; Manijeh Razeghi
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Photoconductor arrays for a spectral-photometric far-infrared camera on SOFIA
Author(s): Juergen Wolf; Hans Driescher; Josef Schubert; David Rabanus; E. Paul; K. Roesner
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High-performance GaAs homojunction far-infrared detectors
Author(s): A. G. Unil Perera; W. Z. Shen; Hui Chun Liu; Margaret Buchanan; William J. Schaff
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Noise of high-Tc superconducting bolometers
Author(s): Igor A. Khrebtov; Vladimir Nikolaevic Leonov; A. D. Tkachenko; Pavel V. Bratukhin; Andrey A. Ivanov; Alexander V. Kuznetsov; Helmut Neff; Erwin Steinbeiss
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Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfaces
Author(s): Victor A. Petrov
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Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy
Author(s): Yong Ju Park; Cheol Koo Hahn; Kwang Mu Kim; Suk Koo Jung; Eun Kyu Kim; Suk-Ki Min
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Photocurrent decay transient process in a Si1-xGex/Si superlattice
Author(s): X. L. Huang; Mun Seok Jeong; O. H. Cha; J. Y. Kim; Eun-Kyung Suh; Hyung Jae Lee
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Electrical transport properties of highly doped N-type GaN epilayers
Author(s): Hyung Jae Lee; M. G. Cheong; Eun-Kyung Suh; Manijeh Razeghi
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RF magnetron sputtering deposition of CdTe passivation on HgCdTe
Author(s): Jaroslaw Rutkowski; Krzysztof Adamiec; Antoni Rogalski
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Extended dynamical range solid state photon counter
Author(s): Ivan Prochazka; Karel Hamal; Josef Blazej; Georg Kirchner; Franz Koidl
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RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition
Author(s): Yoshiyuki Hirano; Fumio Sato; Ahalapitiya Hewage Jayatissa; Hiroshi Ohtake; Kuniharu Takizawa
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Photoresist microparabolas for beam steering
Author(s): Samuel K. Rotich; Jim G. Smith; Alan G. R. Evans; Arthur Brunnschweiler
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Breakdown mechanisms in Al(GaN) MSM photodetectors
Author(s): Ian T. Ferguson; Matthew J. Schurman; Robert F. Karlicek; Zhe Chuan Feng; S. Lianga; Yicheng Lu; Charles L. Joseph
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Recent progress in quantum well infrared photodetector research and development at Jet Propulsion Lab.
Author(s): Timothy N. Krabach; Sarath D. Gunapala; Sumith V. Bandara; John K. Liu; Frederick S. Pool; Deepak K. Sengupta; C. A. Shott; Ronald J. Carralejo; Norman B. Stetson
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