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Proceedings of SPIE Volume 3279

Light-Emitting Diodes: Research, Manufacturing, and Applications II
Editor(s): E. Fred Schubert
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Volume Details

Volume Number: 3279
Date Published: 7 April 1998
Softcover: 20 papers (198) pages
ISBN: 9780819427182

Table of Contents
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Fabrication and characterization of GaN-based blue light-emitting diodes
Author(s): Yuxin Li; Michael G. Brown; Ivan Eliashevich; T. DiCarlo; Chuong A. Tran; Robert F. Karlicek; Richard A. Stall; L. A. Koszi; Yu Cun Lu; Hongen Shen
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InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates
Author(s): Gary M. Smith; Karim S. Boutros; J. W. Szewczuk; J. S. Flynn; V. M. Phanse; Robert P. Vaudo; Joan Marie Redwing
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Life tests and failure mechanisms of GaN/AlGaN/InGaN light-emitting diodes
Author(s): Daniel L. Barton; Marek Osinski; Piotr Perlin; Christopher J. Helms; Niel H. Berg
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GaN-based LEDs grown by molecular beam epitaxy
Author(s): Robert Averbeck; A. Graber; H. Tews; D. Bernklau; Ulrich Barnhoefer; Henning Riechert
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Are cubic nitrides viable materials for optoelectronic devices?
Author(s): Jochen R. Muellhaeuser; R. Klann; H. Yang; Oliver Brandt; Klaus H. Ploog
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Plasma-assisted molecular beam epitaxial growth and characterization of zincblende (In,Al,Ga)N heterostructures on GaAs(001)
Author(s): Jochen R. Muellhaeuser; B. Jenichen; Achim Trampert; Matthias Wassermeier; Oliver Brandt; Klaus H. Ploog
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Yellow photoluminescence in MOCVD-grown n-type GaN
Author(s): E. Fred Schubert; W. Grieshaber; Karim S. Boutros; Joan Marie Redwing
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Material characterization for III-nitride-based light emitters
Author(s): Michael Kneissl; David P. Bour; Linda T. Romano; Brent S. Krusor; Matt D. McCluskey; Werner Goetz; Noble M. Johnson
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Polymer light-emitting logos processed by ink-jet printing technology
Author(s): Yang Yang; Jayesh Bharathan
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Small-molecule organic light-emitting devices in flat panel display applications
Author(s): Janice K. Mahon; Theodore X. Zhou; Paul E. Burrows; Stephen R. Forrest; Mark E. Thompson
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Systematic photoluminescence and electroluminescence study of high-efficiency surface-textured thin-film light-emitting structures
Author(s): Reiner Windisch; Paul L. Heremans; Barundeb Dutta; S. Schoberth; Jan Genoe; Maarten Kuijk; Peter Kiesel; Gottfried H. Doehler; Gustaaf Borghs
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4- to 10-um positive and negative luminescent diodes
Author(s): Tim Ashley; J. A. Beswick; J. Graham Crowder; David T. Dutton; Charles Thomas Elliott; Neil T. Gordon; Alan David Johnson; C. D. Maxey; Graham J. Pryce; Chang Hai Wang
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LEDs on diamond
Author(s): Wolfgang R. Fahrner; Alexander M. Zaitsev; Alexander A. Melnikov; Andrej V. Denisenko; Reinhart Job; Shuit-Tong Lee
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Development of InAsSb-based light-emitting diodes for chemical sensing systems
Author(s): Andrew A. Allerman; Steven R. Kurtz; Robert M. Biefeld; K. C. Baucom; Jeff H. Burkhart
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Erbium-doped silicon light-emitting devices
Author(s): Thomas D. Chen; Anuradha Agarwal; Laura M. Giovane; James S. Foresi; Ling Liao; Desmond R. Lim; Michael T. Morse; Edward J. Ouellette; Sang H. Ahn; Xiaoman Duan; Jurgen Michel; Lionel C. Kimerling
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155-Mb/s and 622-Mb/s transmission through plastic optical fiber and measurement of modal noise
Author(s): Moncef B. Tayahi; Honglei Fan; B. Whitehouse; Niloy K. Dutta; R. Webster
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Sensing applications of diffractive optics with broadband illumination
Author(s): Juergen Jahns; Victor M. Arrizon; D. Hagedorn; Susanne Kinne; Stefan Sinzinger
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MOCVD growth and characterization of 100-mm diameter (Ga1-xAlx)0.5In0.5P/GaAs epitaxial materials for LED applications
Author(s): Zhe Chuan Feng; Ian T. Ferguson; Eric A. Armour; Ashok Chadha; N. Masaun; Richard A. Stall
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Monolithic hemispherical microlenses fabricated by selective oxidation of AlGaAs
Author(s): Yong Xu; Chuan-Cheng Cheng; Reginald K. Lee; John D. O'Brien; Amnon Yariv; Axel Scherer
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Recent advances in In(As,Sb) SLS and QW LEDs for the 3- to 10-um region
Author(s): Christopher C. Phillips; Harvey R. Hardaway; Joerg Heber; Peter Moeck; Mark J. Pullin; Patrick J.P. Tang; Peter Yuen
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