Share Email Print
cover

PROCEEDINGS VOLUME 3051

Optical Microlithography X
Editor(s): Gene E. Fuller
Format Member Price Non-Member Price
Softcover $105.00 * $105.00 *

*Available as a photocopy reprint only. Allow two weeks reprinting time plus standard delivery time. No discounts or returns apply.


Volume Details

Volume Number: 3051
Date Published: 7 July 1997
Softcover: 95 papers (996) pages
ISBN: 9780819424655

Table of Contents
show all abstracts | hide all abstracts
Pattern deformation induced from intensity-unbalanced off-axis illumination
Author(s): Jin-Ha Kim; Seok-Hwan Oh; Dong-Seon Lee; Jeong-Ho Yeo; Yong Hun Yu; Jeong-Lim Nam
Show Abstract
Optical proximity effect of a next-generation superresolution technique
Author(s): Kazuya Kamon
Show Abstract
Reduction of mask-error effect utilizing pupil filter in alternative phase-shift lithography
Author(s): Shuji Nakao; Akihiro Nakae; Kouichirou Tsujita; Yasuji Matsui
Show Abstract
Understanding across chip line width variation: the first step toward optical proximity correction
Author(s): Lars W. Liebmann; Antoinette F. Molless; Richard A. Ferguson; Alfred K. K. Wong; Scott M. Mansfield
Show Abstract
Full-field CD control for sub-0.20-um patterning
Author(s): John L. Sturtevant; John A. Allgair; Mark William Barrick; Chong-Cheng Fu; Kent G. Green; Robert R. Hershey; Lloyd C. Litt; John G. Maltabes; Carla M. Nelson-Thomas; Bernard J. Roman; John Singelyn
Show Abstract
Phase shifting and optical proximity corrections to improve CD control on logic devices in manufacturing for sub-0.35-um i-line
Author(s): Paul W. Ackmann; Stuart E. Brown; John L. Nistler; Chris A. Spence
Show Abstract
Characteristics of Ge-based ARL for DUV lithography
Author(s): Yongbeom Kim; Dong-Wan Kim; Hoyoung Kang; Joo-Tae Moon; Moon-Yong Lee
Show Abstract
Effects of excimer laser radiation on attenuated phase-shift masking materials
Author(s): Bruce W. Smith; Lena Zavyalova; Shahid A. Butt; Anatoly Bourov; Nathan Bergman; Carlos A. Fonseca; Zulfiquar Alam
Show Abstract
DOF enhancement of isolated line patterns by newly developed assistant pattern method
Author(s): Seiji Matsuura; Takeo Hashimoto; Takayuki Uchiyama; Masashi Fujimoto; Kunihiko Kasama
Show Abstract
Process latitude and CD bias evaluation of attenuated PSM
Author(s): Regina T. Schmidt; Chris A. Spence
Show Abstract
Yield management and reticle defects
Author(s): Kent B. Ibsen; Mark D. Eickhoff; Z. Mark Ma; Sonya Yvette Shaw; Steven D. Carlson; H. Tomomatsu
Show Abstract
NA/sigma optimization strategies for an advanced DUV stepper applied to 0.25- and sub-0.25-um critical levels
Author(s): Maaike Op de Beeck; Kurt G. Ronse; Kouros Ghandehari; Patrick Jaenen; Harry Botermans; Jo Finders; John A. Lilygren; Daniel Claire Baker; Geert Vandenberghe; Peter De Bisschop; Mireille Maenhoudt; Luc Van den Hove
Show Abstract
Challenge of 1-Gb DRAM development when using optical lithography
Author(s): Timothy R. Farrell; Ronald Nunes; Donald J. Samuels; Alan C. Thomas; Richard A. Ferguson; Antoinette F. Molless; Alfred K. K. Wong; Will Conley; Donald C. Wheeler; Santo Credendino; Munir Naeem; Peter Hoh; Zhijian G. Lu
Show Abstract
Application of alternating phase-shifting mask to 0.16 um CMOS logic gate patterns
Author(s): Koji Matsuoka; Akio Misaka
Show Abstract
0.25-um multilevel interconnect with DUV processing
Author(s): William L. Krisa; Sonya Yvette Shaw; Ken Brennan; Girish A. Dixit; Manoj K. Jain
Show Abstract
Experimental results on optical proximity correction with variable-threshold resist model
Author(s): Nicolas B. Cobb; Avideh Zakhor; Mehran Reihani; Farvardin Jahansooz; Vijaya N.V. Raghavan
Show Abstract
Spatial-filter models to describe IC lithographic behavior
Author(s): John P. Stirniman; Michael L. Rieger
Show Abstract
Effect of the partial coherence on reflective notching
Author(s): Robert John Socha; Christopher J. Progler; Andrew R. Neureuther
Show Abstract
Process-specific tuning of lithography simulation tools
Author(s): Mark E. Mason; Robert A. Soper; R. Mark Terry; Chris A. Mack
Show Abstract
Practical method of evaluating two-dimensional resist features for lithographic DRC
Author(s): Hiroki Futatsuya; Tatsuo Chijimatsu; Satoru Asai; Isamu Hanyu
Show Abstract
Potential causes of across field CD variation
Author(s): Christopher J. Progler; Hong Du; Greg Wells
Show Abstract
Toward a comprehensive control of full-field image quality in optical photolithography
Author(s): Donis G. Flagello; Jos de Klerk; Guy Davies; Richard Rogoff; Bernd Geh; Michael Arnz; Ulrich Wegmann; Michael Kraemer
Show Abstract
Overlay error of fine patterns by lens aberration using modified illumination
Author(s): Takashi Saito; Hisashi Watanabe; Yoshimitsu Okuda
Show Abstract
Photolithographic lens characterization of critical dimension variation using empirical focal-plane modeling
Author(s): Mircea V. Dusa; Bo Su; Stephen Dellarochetta; Terrence E. Zavecz
Show Abstract
Optical proximity effects correction at 0.25 um incorporating process variations in lithography
Author(s): Alexander V. Tritchkov; Michael L. Rieger; John P. Stirniman; Anthony Yen; Kurt G. Ronse; Geert Vandenberghe; Luc Van den Hove
Show Abstract
Comparison between optical proximity effect of positive and negative tone patterns in KrF lithography
Author(s): Masashi Fujimoto; Takeo Hashimoto; Takayuki Uchiyama; Seiji Matsuura; Kunihiko Kasama
Show Abstract
Optical proximity correction of alternating phase-shift masks for 0.18-um KrF lithography
Author(s): Tadao Yasuzato; Shinji Ishida; Satomi Shioiri; Hiroyoshi Tanabe; Kunihiko Kasama
Show Abstract
Optical proximity correction in DRAM cell using a new statistical methodology
Author(s): Akio Misaka; Akihiko Goda; Koji Matsuoka; Hiroyuki Umimoto; Shinji Odanaka
Show Abstract
Application of a simple resist model to fast optical proximity correction
Author(s): Christoph Dolainsky; Wilhelm Maurer
Show Abstract
Minimization of total overlay errors on product wafers using an advanced optimization scheme
Author(s): Harry J. Levinson; Moshe E. Preil; Patrick J. Lord
Show Abstract
Control and uniformity of 280-nm features in i-line lithography using optical proximity corrections and off-axis illumination
Author(s): Pat G. Watson; Joseph G. Garofalo; M. Hansen; Ilya M. Grodnensky; Ludwik J. Zych; R. Takahashi; Willie J. Yarbrough; Edward Ehrlacher; A. Reim; R. M. Vella; A. Dunbar; Albert Colina; B. Herrero; D. Castro
Show Abstract
Use of exposure compensation to improve device performance for speed and binning based on electrical parametric feedback into fabrication design
Author(s): Paul W. Ackmann; Stuart E. Brown; Richard D. Edwards; Doug Downey; Mark Michael; Karen L. Turnquest; John L. Nistler
Show Abstract
Manufacturing optimization strategies for 0.35-um design rules
Author(s): Jacek K. Tyminski; Sean J. McNamara; Toshihiro Sasaya; Masaya Komatsu; Dean C. Humphrey; Arthur Winslow
Characterization of positive DUV resists at 0.25-um polygate using organic and inorganic antireflection schemes
Author(s): Sasha K. Dass; Kevin J. Orvek; Len Gruber; Mike C. Broomfield; John Tremblay; MaryAnn Piasecki
Show Abstract
Micrascan III: performance of a third-generation catadioptric step-and-scan lithographic tool
Author(s): Daniel R. Cote; Keith W. Andresen; David J. Cronin; Hilary G. Harrold; Marc D. Himel; J. Kane; Joe Lyons; Louis Markoya; Christopher J. Mason; Diane C. McCafferty; Matthew E. McCarthy; Geoffrey O'Connor; Harry Sewell; David M. Williamson
Show Abstract
Performance of a step-and-scan system for DUV lithography
Author(s): Gerard de Zwart; Martin A. van den Brink; Richard A. George; Danu Satriasaputra; Jan Baselmans; H. Butler; Jan B.P. van Schoot; Jos de Klerk
Show Abstract
Alignment strategies for planarizing technologies
Author(s): Naomasa Shiraishi; Ayako Sugaya; Derek P. Coon
Show Abstract
Alignment sensor corrections for tool-induced shift (TIS)
Author(s): Tsuneo Kanda; Kazuhiko Mishima; Eiichi Murakami; Hideki Ina
Show Abstract
Six degrees of freedom Mag-Lev stage development
Author(s): Mark Williams; Peter Faill; Paul M. Bischoff; Steven P. Tracy; Bill Arling
Show Abstract
ArF excimer laser for 193-nm lithography
Author(s): Uwe Stamm; Juergen Kleinschmidt; Peter Heist; Igor Bragin; Rainer Paetzel; Dirk Basting
Show Abstract
Performance of excimer lasers as light sources for 193-nm lithography
Author(s): Jan H. C. Sedlacek; Scott P. Doran; Michael Fritze; Roderick R. Kunz; Mordechai Rothschild; Ray S. Uttaro; Daniel A. Corliss
Show Abstract
Solid state lasers for 193-nm photolithography
Author(s): Roy D. Mead; Charles E. Hamilton; Dennis D. Lowenthal
Show Abstract
Subpicometer ArF excimer laser for 193-nm lithography
Author(s): Jun Akita; Hiroshi Komori; Noriaki Kouda; Shunsuke Yoshioka; Yasuo Itakura; Hakaru Mizoguchi
Show Abstract
ArF excimer laser lithography using monochromatic projection lens coupled with narrowed-bandwidth laser
Author(s): Jun-ichi Yano; Shinji Ito; Hitoshi Sekita; Akifumi Tada; Yukio Ogura
Show Abstract
Experimental study on nonlinear multiple-exposure method
Author(s): Hiroshi Ooki; Derek P. Coon; Soichi Owa; Toshihiko Sei; Kazuya Okamoto
Show Abstract
New optical imaging method for lithography and high-resolution inspections
Author(s): Alice Gheen; Y. Wang; ZhiJiang Wang
Show Abstract
Analysis of nonlinear overlay errors by aperture mixing related with pattern asymmetry
Author(s): Chang-Moon Lim; Ki-Sung Kwon; Donggyu Yim; Dong-Hwan Son; Hyeong-Soo Kim; Ki-Ho Baik
Show Abstract
Mask CD control requirement at 0.18-um design rules for 193-nm lithography
Author(s): Pei-yang Yan; Joseph C. Langston
Show Abstract
Process optimization by reducing I-D bias for 0.25-um logic devices
Author(s): Ki-Yeop Park; Byoung-Il Choi; Won-Kyu Lee; Chul-Gi Ko
Show Abstract
Minimization of DUV multi-interference effect in 0.25-um device fabrication
Author(s): Ju-Hwan Kim; Seung-Chan Moon; Bong-Sang Ko; Hee Kook Park; Tae-Gook Lee; Ki-Soo Shin; Daehee Kim
Show Abstract
Planarizing BARC 0.32-um i-line lithography process for the reduction of intradie CD variation
Author(s): Jeffrey R. Johnson; Audrey M. Davis; Andrew E. Bair; Peter D. Nunan; Charles R. Spinner; Mark A. Spak; Ralph R. Dammel
Show Abstract
Process and resolution enhancement using a new inorganic bottom antireflective layer for i-line lithography
Author(s): Qunying Lin; Dai Xue Chun; Ronfu Chu
Show Abstract
Line-width variation with different sublayers for 0.25-um minimum feature size in DUV lithography
Author(s): Hye-Keun Oh; Young-Seon Cho; Yeon-Un Jeong; Hoyoung Kang; Gun-Sang Lee; Ilsin An; In-Ho Park
Show Abstract
Focused-ion-beam repair of embedded phase-shift masks
Author(s): Zheng Cui; Philip D. Prewett; John G. Watson
Show Abstract
Simulation and optimization of phase-shift masks for dense contact patterns with i-line illumination
Author(s): Chuen-Huei Yang; Chang-Ming Dai
Show Abstract
Edge-phase-shifting lithography for sub-0.3-um T-gates
Author(s): Axel Huelsmann; Fred Becker; Jochen Hornung; Dagmar Koehler; Joachim Schneider
Show Abstract
New approach to data preparation and processing for high-density patterns
Author(s): Anders Thuren; Torbjoern Sandstrom
Show Abstract
Effects of illumination wavelength on the accuracy of optical overlay metrology
Author(s): Jae-Seong Han; Hak Kim; Jeong-Lim Nam; Myung-Soo Han; Soon-Kwon Lim; Shimon D. Yanowitz; Nigel P. Smith; Andrew M.C. Smout
Show Abstract
Stepper matching for optimum line performance
Author(s): Tom Dooly; Ying-Ying Yang
Show Abstract
Non-ARC solution to metal reflective notching: its evaluation and selection
Author(s): Stephen Jack Buffat
Show Abstract
Three-dimensional nonplanar lithography simulation using a periodic fast multipole method
Author(s): Michael S. Yeung; Eytan Barouch
Show Abstract
Practical 3D lithography simulation system
Author(s): Hirotomo Inui; Hirokatsu Kaneko; Keiichiro Tounai; Kiroyoshi Tanabe; Toshiyuki Ohta
Show Abstract
Influence of optical nonlinearities of the photoresist on the photolithographic process: basics
Author(s): Andreas Erdmann; Clifford L. Henderson; C. Grant Willson; Wolfgang Henke
Show Abstract
Methodology for utilizing CD distributions for optimization of lithographic processes
Author(s): Edward W. Charrier; Chris A. Mack; Qiang Zuo; Mark John Maslow
Show Abstract
Sub-half-micron contact window design with 3D photolithography simulator
Author(s): Steve K. Brainerd; Douglas A. Bernard; Juan C. Rey; Jiangwei Li; Yuri Granik; Victor V. Boksha
Show Abstract
Fast modeling of 3D planar resist images for high-NA projection lithography
Author(s): Vladimir V. Ivin; Dmitry Yu. Larin; Kevin D. Lucas; Tariel M. Makhviladze; Andrew A. Rogov; Sergey V. Verzunov
Show Abstract
Photolithography simulation on nonplanar substrate using the finite-element method with absorbing boundary conditions
Author(s): In-Ho Park; Hye-Keun Oh; S. B. Hyun
Show Abstract
Topography description model for 3D exposure simulation
Author(s): Mumit Khan; Srinivas B. Bollepalli; Franco Cerrina
Show Abstract
Simulation of reflective notching with TEMPEST
Author(s): Thomas V. Pistor; Andrew R. Neureuther
Show Abstract
Comparison between rigorous light-scattering methods
Author(s): Mark P. Davidson; Bernd H. Kleemann; Joerg Bischoff
Show Abstract
Signamization of resist images
Author(s): Burn Jeng Lin
Show Abstract
Measuring flare and its effect on process latitude
Author(s): Jungchul Park; Hoyoung Kang; Jootae Moon; Moonyoung Lee
Show Abstract
Aberration effects in the region of 0.18 um lithography with KrF excimer stepper
Author(s): Donggyu Yim; Chang-Moon Lim; Hyeong-Soo Kim; Ki-Ho Baik
Show Abstract
Estimation of optical proximity effect caused by mask fabrication error
Author(s): Kazuya Kamon; Tetsuro Hanawa; Koichi Moriizumi
Show Abstract
Temperature dependence of UV-induced compaction in fused silica
Author(s): Fan Piao; Richard E. Schenker; William G. Oldham
Show Abstract
Real-time stage position measurement with nanometer-scale accuracy
Author(s): Philip D. Henshaw; Donald P. DeGloria; Sandra A. Kelly; Robert F. Dillon
Show Abstract
Performance of small-field 193-nm exposure system
Author(s): Dohoon Kim; Kag Hyeon Lee; Jong-Soo Kim; Sang-Soo Choi; Hye-Keun Oh; Hai Bin Chung; Hyung Joun Yoo
Show Abstract
Reliability studies of 1-kHz KrF excimer lasers for DUV lithography
Author(s): Palash P. Das; Hilary Heinmets; Cynthia A. Maley; Igor V. Fomenkov; Ray Cybulski; Donald G. Larson
Show Abstract
Excimer laser interactions with dielectric thin films for advanced projection optics
Author(s): Norbert Kaiser; Roland Thielsch; Michael Mertin; Harry H. Bauer; Eberhard Welsch
Show Abstract
Performance analysis of ArF excimer laser lithography optics
Author(s): Kag Hyeon Lee; Dohoon Kim; Jong-Soo Kim; Hai Bin Chung; Hyung Joun Yoo
Show Abstract
Optical microlithography with nearly nondiffracting beams
Author(s): Miklos Erdelyi; Zoltan L. Horvath; Zsolt Bor; Gabor Szabo; Joseph R. Cavallaro; Michael C. Smayling; Frank K. Tittel
Show Abstract
Submicron DUV lithography using second-harmonic light of copper vapor laser
Author(s): Huijie Huang; Dunwu Lu; Hongwu Ren; Peihui Liang; Longlong Du
Show Abstract
Half-micron excimer laser lithography using a 1:1 broadband catadioptric lens with a half-circle field
Author(s): Dunwu Lu; Huijie Huang; Yu Yan; Longlong Du; Ruichang Gao
Show Abstract
New approach to global alignment in IC manufacturing based on a neural network model
Author(s): Amir Aalam Ghazanfarian; Roger Fabian W. Pease; Xun Chen; Mark A. McCord
Show Abstract
Model-based optical proximity correction including effects of photoresist processes
Author(s): Jiangwei Li; Douglas A. Bernard; Juan C. Rey; Victor V. Boksha
Show Abstract
Mask defect printability at 0.18-um design rules for 193-nm lithography
Author(s): Pei-yang Yan; An Tran; Michael R. Schmidt
Show Abstract
Calculation and simulation of intensity distribution of uniform-illumination optical systems for submicron photolithography
Author(s): Chongxi Zhou; Dajian Lin; HanMin Yao
Show Abstract
Practical method for full-chip optical proximity correction
Author(s): J. Fung Chen; Thomas L. Laidig; Kurt E. Wampler; Roger F. Caldwell
Show Abstract
Phase-shift focus monitor applications to lithography tool control
Author(s): Donald C. Wheeler; Eric P. Solecky; T. Dinh; Rebecca D. Mih
Show Abstract
Characterization of autofocus uniformity and precision on ASML steppers using the phase-shift focus monitor reticle
Author(s): Richard D. Edwards; Paul W. Ackmann; Christine Fischer; Mark Desrocher; Mark Puzerewski
Show Abstract
Compaction of fused silica under low-fluence/long-term 193-nm irradiation
Author(s): Charlene M. Smith; Nicholas F. Borrelli; Douglas C. Allan; Thomas P. Seward
Show Abstract
Wavefront engineering from 500- to 100-nm CD
Author(s): David Levenson
Show Abstract
Optical lithography--thirty years and three orders of magnitude: the evolution of optical lithography tools
Author(s): John H. Bruning
Show Abstract
Photoresist materials: a historical perspective
Author(s): C. Grant Willson; Ralph R. Dammel; Arnost Reiser
Show Abstract

© SPIE. Terms of Use
Back to Top