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Proceedings of SPIE Volume 3050

Metrology, Inspection, and Process Control for Microlithography XI
Editor(s): Susan K. Jones
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Volume Details

Volume Number: 3050
Date Published: 7 July 1997
Softcover: 59 papers (648) pages
ISBN: 9780819424648

Table of Contents
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Application of statistical metrology to reduce total uncertainty in the CD SEM measurement of across-chip linewidth variation
Author(s): Kevin M. Monahan; Randy A. Forcier; Waiman Ng; Suresh Kudallur; Harry Sewell; Herschel M. Marchman; Jerry E. Schlesinger
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Fourier transform feedback tool for scanning electron microscopes used in semiconductor metrology
Author(s): Michael T. Postek; Andras E. Vladar; Mark P. Davidson
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Survey of scanning electron microscopes using quantitative resolution evaluation
Author(s): Gilles L. Fanget; Herve M. Martin; Brigitte Florin
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Statistical verification of multiple CD-SEM matching
Author(s): Doreen Erickson; Neal T. Sullivan; Richard C. Elliott
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Effect of processing on the overlay performance of a wafer stepper
Author(s): Peter Dirksen; Casper A. H. Juffermans; A. Leeuwestein; Kees A. H. Mutsaers; Tom A. M. Nuijs; Rudy J. M. Pellens; Robert Wolters; Jack Gemen
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Improving metrology signal-to-noise on grainy overlay features
Author(s): Arnold W. Yanof; Woody Windsor; Russ Elias; John N. Helbert; Cameron Harker
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Improving the accuracy of overlay measurements through reduction in tool- and wafer-induced shifts
Author(s): Moshe E. Preil; Bert F. Plambeck; Yoram Uziel; Hao Zhou; Matthew W. Melvin
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Improvement of alignment accuracy for scaled exposure field
Author(s): Satoshi Nakajima; Makoto Tanigawa; Akira Ishihama; Keizo Sakiyama
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Method to characterize overlay tool misalignments and distortions
Author(s): Richard M. Silver; James E. Potzick; Fredric Scire; Christopher J. Evans; M. McGlauflin; Edward Kornegay; Robert D. Larrabee
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Thinking small: challenges for metrology at century's end
Author(s): William H. Arnold
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Effect of reticle bias on isofocal process performance at subhalfmicron resolution
Author(s): Brian Martin; Graham G. Arthur
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Simulation of subhalfmicron-mask defect printability at 1X reticle magnification
Author(s): Warren W. Flack; Gary Newman; Dan L. Schurz
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Simulating photomask edge roughness and corner rounding
Author(s): Konstantinos Adam; Robert John Socha; Thomas V. Pistor; Andrew R. Neureuther
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Investigation of the effects of charging in SEM-based CD metrology
Author(s): Mark P. Davidson; Neal T. Sullivan
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High-precision calibration of a scanning probe microscope (SPM) for pitch and overlay measurements
Author(s): Donald A. Chernoff; Jason D. Lohr; Douglas P. Hansen; Michael Lines
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Dimensional metrology at the nanometer level: combined SEM and PPM
Author(s): Michael T. Postek; Huddee J. Ho; Harrison L. Weese
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Scatterometric process monitor for silylation
Author(s): Shoaib H. Zaidi; John Robert McNeil; S. Sohail H. Naqvi
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Importance of wafer flatness for CMP and lithography
Author(s): Yuan Zhang; Lucian Wagner; Peter Golbutsov
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Plasma antireflective coating optimization using enhanced reflectivity modeling
Author(s): Kevin D. Lucas; Jamie A. Vasquez; Ajay Jain; Stanley M. Filipiak; Tam Vuong; Charles Fredrick King; Bernard J. Roman
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Characterization of real particle size for the process particle monitor using laser surface scanners
Author(s): Yoko Miyazaki; Toshiaki Mugibayashi; Masahiko Ikeno
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Characterization of defect detection schemes using rigorous 3D EM field simulation
Author(s): Aaron L. Swecker; Andrzej J. Strojwas; Ady Levy; Bobby R. Bell
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Application of rigorous topography simulation for modeling of defect propagation/growth in VLSI fabrication
Author(s): Xiaolei Li; Mahesh Reddy; Andrzej J. Strojwas; Linda Milor; YungTao Lin
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Optimizing inline defect monitoring using correlation with electrical failures
Author(s): Prashant A. Aji; Arnaud Lanier
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Comparisons of six different intrafield control paradigms in an advanced mix-and-match environment
Author(s): Joseph C. Pellegrini
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Characterizing overlay registration of concentric 5X and 1X stepper exposure fields using interfield data
Author(s): Francis G. Goodwin; Joseph C. Pellegrini
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Overlay measurements and edge detection methods
Author(s): Alexander I. Zaslavsky
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Basic challenges of optical overlay measurements
Author(s): Anatoly Shchemelinin; Eugene Shifrin; Alexander I. Zaslavsky
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Characteristics of overlay accuracy after metal CMP process
Author(s): Young-Keun Kim; Yong-Suk Lee; Won-Kyu Lee; Chul-Gi Ko
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Stability of glass probe tips for critical dimension measurement
Author(s): Joseph E. Griffith; Gabriel L. Miller; Leslie C. Hopkins; Charles E. Bryson; E. J. Snyder; J. J. Plombon; Leonid A. Vasilyev; Jeffery B. Bindell
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Unique approach to high-performance magnification calibration
Author(s): Douglas P. Hansen; Michael Lines; Donald A. Chernoff; Jason D. Lohr
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Novel near-field optical probe for 100-nm critical dimension measurements
Author(s): Brian R. Stallard; Sumanth Kaushik
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Statistical measure for the sharpness of SEM images
Author(s): Nien-Fan Zhang; Michael T. Postek; Robert D. Larrabee; Andras E. Vladar; William J. Keery; Samuel N. Jones
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Automatic classification of spatial signatures on semiconductor wafer maps
Author(s): Kenneth W. Tobin; Shaun S. Gleason; Thomas P. Karnowski; Susan L. Cohen; Fred Lakhani
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Advanced inspection for 0.25-um-generation semiconductor manufacturing
Author(s): Arye Shapiro; Thomas James; Brian M. Trafas
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Improved defect detection performance at metal and contact etch levels using a new optical-comparison segmented-autothreshold technology
Author(s): James F. Garvin; Kevin Keefauver; Mark Tinker
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Detecting lithography's variations: new types of defects for automatic inspection machines
Author(s): Paul Gudeczauskas; Erez Ravid
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Optical characterization of attenuated phase shifters
Author(s): Alessandro Callegari; Katherina Babich
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Optical diffraction tomography for latent image metrology
Author(s): Ziad R. Hatab; Nasir U. Ahmed; S. Sohail H. Naqvi; John Robert McNeil
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Monte Carlo simulation of charging effects on linewidth metrology
Author(s): Yeong-Uk Ko
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Highly accurate CD measurement with a micro standard
Author(s): Katsuhiro Sasada; Nobuyoshi Hashimoto; Hiroyoshi Mori; Tadashi Ohtaka
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Advanced FTIR techniques for photoresist process characterization
Author(s): Ronald A. Carpio; Jeff D. Byers; John S. Petersen; Wolfgang Theiss
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CMP overlay metrology: robust performance through signal and noise improvements
Author(s): John C. Podlesny; Francis Cusack; Susan Redmond
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Alternative method for monitoring an in-line CD SEM
Author(s): Pedro P. Herrera; Susan A. Dick; John A. Allgair
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E-beam-induced distortions on SiN x-ray mask membrane
Author(s): Nikolai L. Krasnoperov; Zheng Chen; Franco Cerrina
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Single-feature metrology by means of light scatter analysis
Author(s): Joerg Bischoff; Karl Hehl
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Novel approach for defect detection and reduction techniques for submicron lithography
Author(s): Jonathan A. Orth; Khoi A. Phan; David Ashby Steele; Roger Y. B. Young
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Monitoring optical properties and thickness of PECVD SiON antireflective layer by spectroscopic ellipsometry
Author(s): Carlos L. Ygartua; Kathy Konjuh; Shari Schuchmann; Kenneth P. MacWilliams; David Mordo
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3D imaging of VLSI wafer surfaces using a multiple-detector SEM
Author(s): Yaron I. Gold; Radel Ben-Av; Mark Wagner
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Offline programming of CD-SEM systems enhances wafer fab productivity
Author(s): Rudolf Schiessl
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Error estimation for lattice methods of stage self-calibration
Author(s): Michael R. Raugh
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Innovations in monitoring for sub-half-micron production
Author(s): Teresa L. Lauck; Kristin Wiley
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CMP-compatible alignment strategy
Author(s): Eric Rouchouze; Jean-Michel Darracq; Jack Gemen
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Complementary alignment metrology: a visual technique for alignment monitoring
Author(s): David H. Ziger; Pierre Leroux
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Precise measurement of ARC optical indices in the deep-UV range by variable-angle spectroscopic ellipsometry
Author(s): Pierre Boher; Jean-Louis P. Stehle; Jean-Philippe Piel; Christophe Defranoux; Louis Hennet
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Contact holes: a challenge for signal collection efficiency and measurement algorithms
Author(s): Eric P. Solecky; Charles N. Archie
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Wavefront engineering from 500-nm to 100-nm CD
Author(s): David Levenson
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0ptical lithography--thirty years and three orders of magnitude: the evolution of optical lithography tools
Author(s): John H. Bruning
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Photoresist materials: a historical perspective
Author(s): C. Grant Willson; Ralph R. Dammel; Arnost Reiser
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