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Proceedings of SPIE Volume 3049

Advances in Resist Technology and Processing XIV
Editor(s): Regine G. Tarascon-Auriol
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Volume Details

Volume Number: 3049
Date Published: 7 July 1997
Softcover: 96 papers (1044) pages
ISBN: 9780819424631

Table of Contents
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Role of photoacid structure on the performance of 193-nm resists
Author(s): Robert D. Allen; Juliann Opitz; Carl E. Larson; Richard A. Di Pietro; Gregory Breyta; Donald C. Hofer
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Function-integrated alicyclic polymer for ArF chemically amplified resists
Author(s): Katsumi Maeda; Kaichiro Nakano; Shigeyuki Iwasa; Etsuo Hasegawa
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Practical resists for 193-nm lithography using 2.38% TMAH: physicochemical influences on resist performance
Author(s): Charles R. Szmanda; Jaclyn J. Yu; George G. Barclay; James F. Cameron; Robert J. Kavanagh; Robert F. Blacksmith; Peter Trefonas; Gary N. Taylor
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Acid amplification of chemically amplified resists for 193-nm lithography
Author(s): Takeshi Ohfuji; Makoto Takahashi; Koichi Kuhara; Tohru Ogawa; Hiroshi Ohtsuka; Masaru Sasago; Kunihiro Ichimura
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Recent advances in 193-nm single-layer photoresists based on alternating copolymers of cycloolefins
Author(s): Francis M. Houlihan; Thomas I. Wallow; Allen G. Timko; E. Neria; Richard S. Hutton; Raymond A. Cirelli; Omkaram Nalamasu; Elsa Reichmanis
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New single-layer positive photoresists for 193-nm photolithography
Author(s): Uzodinma Okoroanyanwu; Tsutomu Shimokawa; Jeff D. Byers; David R. Medeiros; C. Grant Willson; Qingshang Jason Niu; Jean M. J. Frechet; Robert D. Allen
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Novel single-layer chemically amplified resist for 193-nm lithography
Author(s): Sang-Jun Choi; Yool Kang; Dong-Won Jung; Chun-Geun Park; Joo-Tae Moon
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Novel functional nortricyclene polymers and copolymers for 248- and 193-nm chemically amplified resists
Author(s): Qingshang Jason Niu; Jean M. J. Frechet; Uzodinma Okoroanyanwu; Jeff D. Byers; C. Grant Willson
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Terpolymer of maleic anhydride and cycloolefin derivatives as an ArF photoresist
Author(s): Seong-Ju Kim; Joo Hyeon Park; Ji-Hong Kim; Ki-Dae Kim; Hosull Lee; Jae Chang Jung; Cheol-Kyu Bok; Ki-Ho Baik
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Effect of polymer structure on dissolution-rate characteristics in carboxylated alicyclic polymers for 193-nm lithography
Author(s): Shigeyuki Iwasa; Katsumi Maeda; Kaichiro Nakano; Etsuo Hasegawa
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Probing the environmental stability and bake latitudes of acetal vs. ketal protected polyvinylphenol DUV resist systems
Author(s): Uday Kumar; Ashish Pandya; Roger F. Sinta; Wu-Song Huang; Rao Bantu; Ahmad D. Katnani
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High-sensitivity silylation process for 193-nm lithography
Author(s): Shigeyasu Mori; Koichi Kuhara; Takeshi Ohfuji; Masaru Sasago
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Process techniques for improving post-exposure delay stability in chemically amplified resists
Author(s): Sassan Nour; Edward K. Pavelchek; Tracy K. Lindsay; Matthew L. Moynihan; Lori Gambin
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Modulated-temperature DSC (MT-DSC): a new technique for the extensive thermal characterization of complex chemically amplified systems
Author(s): Patrick Jean Paniez; S. Brun; S. Derrough
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Time-dependent simulation of acid and product distributions in chemically amplified resist
Author(s): Kazuya Kamon; Keisuke Nakazawa; Atsuko Yamaguchi; Nobuyuki N. Matsuzawa; Takeshi Ohfuji; Seiichi Tagawa
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Enhancing the development-rate model for optimum simulation capability in the subhalf-micron regime
Author(s): Graham G. Arthur; Brian Martin; Chris A. Mack
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Photoresist development modeling based on continuity equations
Author(s): Yueqi Zhu; Luigi Capodieci; Franco Cerrina
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Photoresist characterization for lithography simulation: IV. Processing effects on resist parameters
Author(s): Clifford L. Henderson; Pavlos C. Tsiartas; Lewis W. Flanagin; Sanju Pancholi; Sajed A. Chowdhury; Katherine D. Dombrowski; Ammar N. Chinwalla; C. Grant Willson
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Non-chemically amplified 248-nm resist materials
Author(s): C. Grant Willson; Wang Yueh; Michael J. Leeson; Thomas Steinhaeusler; Christopher L. McAdams; Ralph R. Dammel; James R. Sounik; M. Aslam; Richard Vicari; Michael T. Sheehan
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Environmentally stable chemically amplified resist
Author(s): Yasuhiro Kameyama; Hiroshi Tomiyasu; Michinori Tsukamoto; Takaaki Niinomi; Yuki Tanaka; Jun Fujita; Tameichi Ochiai; Akira Uedono; Shoichiro Tanigawa
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Acid evaporation property in chemically amplified resists
Author(s): Shuichi Hashimoto; Toshiro Itani; Hiroshi Yoshino; Mitsuharu Yamana; Norihiko Samoto; Kunihiko Kasama
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Application of a general reaction/diffusion resist model to emerging materials with extension to nonactinic exposure
Author(s): Marco Antonio Zuniga; Nicholas N. Rau; Andrew R. Neureuther
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Deblocking reaction of chemically amplified positive DUV resists
Author(s): Mitsuharu Yamana; Toshiro Itani; Hiroshi Yoshino; Shuichi Hashimoto; Norihiko Samoto; Kunihiko Kasama
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New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices
Author(s): Will Conley; William R. Brunsvold; Fred Buehrer; Ronald DellaGuardia; David Dobuzinsky; Timothy R. Farrell; Hok Ho; Ahmad D. Katnani; Robin Keller; James T. Marsh; Paul Muller; Ronald Nunes; Hung Y. Ng; James M. Oberschmidt; Michael Pike; Deborah Ryan; Tina Cotler-Wagner; Ron Schulz; Hiroshi Ito; Donald C. Hofer; Gregory Breyta; Debra Fenzel-Alexander; Gregory M. Wallraff; Juliann Opitz; James W. Thackeray; George G. Barclay; James F. Cameron; Tracy K. Lindsay; Michael Francis Cronin; Matthew L. Moynihan; Sassan Nour; Jacque H. Georger; Mike Mori; Peter Hagerty; Roger F. Sinta; Thomas M. Zydowsky
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DUV resist strategy for applications of next-generation devices
Author(s): Yoshiaki Arai; Kazufumi Sato
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Characterization and optimization of positive-tone DUV resists on TiN substrates
Author(s): Peter Zandbergen; Wendy F.J. Gehoel-van Ansem; Geert Vandenberghe; Veerle Van Driessche; Hans Vloeberghs
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Design and process of a new DUV ARCH3 resist
Author(s): N. R. Bantu; Brian Maxwell; Arturo N. Medina; Thomas R. Sarubbi; Medhat A. Toukhy; Hans-Thomas Schacht; Pasquale A. Falcigno; Norbert Muenzel; Klaus Petschel; Francis M. Houlihan; Omkaram Nalamasu; Allen G. Timko
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Effect of salt on the dissolution of novolac in base
Author(s): Myoung-Soo Kim; Arnost Reiser
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New approach to PEB mechanisms in novolac-DNQ resists: influence of physical and viscoelastic properties
Author(s): Olivier Toublan; Helene Peloso; Alain Prola; Patrick Jean Paniez
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Diffusivity measurements in polymers: IV. Acid diffusion in chemically amplified resists
Author(s): Katherine E. Mueller; William J. Koros; Chris A. Mack; C. Grant Willson
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Robust i-line resist engineering using neural network and statistical design applications
Author(s): Medhat A. Toukhy; David J. Brzozowy
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PHS with inert blocking groups for DUV negative resist
Author(s): William R. Brunsvold; Will Conley; Pushkara Rao Varanasi; Mahmoud Khojasteh; Niranjan M. Patel; Antoinette F. Molless; Mark O. Neisser; Gregory Breyta
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Prediction of lithographic performance of resist/BARC bilayers in topographic situations: application to organic and inorganic BARCs
Author(s): Andre Schiltz; Patrick Schiavone
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Process effects resulting from an increased BARC thickness
Author(s): Ronald J. Eakin; Shangting F. Detweiler; Gregory J. Stagaman; Mark R Tesauro; Mark A. Spak; Ralph R. Dammel
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Optimal design of antireflective layer for DUV lithography and experimental results
Author(s): Seung-Gol Lee; Kyung-Il Lee; Choong-Ki Seo; Jong-Ung Lee; Yongkyoo Choi; Byung-Ho Nam; Jeong Yun Yu; Jae-Keun Jeong
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Practical implementation of top-surface imaging process by silylation to sub-0.20-um lithography
Author(s): Byung-Jun Park; Ki-Ho Baik; Hyoung-Gi Kim; Jin-Woong Kim; Cheol-Kyu Bok; Johan Vertommen; Rik Rosenlund
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Design of a positive-tone water-soluble resist
Author(s): Jennifer M. Havard; Jean M. J. Frechet; Dario Pasini; Brenda Mar; Shintaro Yamada; David R. Medeiros; C. Grant Willson
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Acid diffusion control in chemical amplification positive resists by exchange reaction of conjugate bases
Author(s): Toshio Sakamizu; Tadashi Arai; Hidenori Yamaguchi; Hiroshi Shiraishi
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High-contrast chemically amplified resist for SR lithography
Author(s): Teruhiko Kumada; Hiroshi Adachi; Hiroshi Watanabe; Hiroaki Sumitani
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Overview of photoacid generator design for acetal resist systems
Author(s): Francis M. Houlihan; Omkaram Nalamasu; Elsa Reichmanis; Allen G. Timko; Ulrike Varlemann; Thomas I. Wallow; N. R. Bantu; John J. Biafore; Thomas R. Sarubbi; Pasquale A. Falcigno; H. J. Kirner; Norbert Muenzel; Klaus Petschel; Hans-Thomas Schacht; Reinhard Schulz
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Complex triarylsulfonium salts as photoacid generators for deep-UV microlithography: synthesis, identification, and lithographic characterization of key individual components
Author(s): James F. Cameron; Timothy G. Adams; Arturo J. Orellana; Martha M. Rajaratnam; Roger F. Sinta
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ArF photoresist system using alicyclic polymer
Author(s): Joo Hyeon Park; Seong-Ju Kim; Sun-Yi Park; Hosull Lee; Jae Chang Jung; Cheol-Kyu Bok; Ki-Ho Baik
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Reactivity and kinetic parameters for UVIIHS
Author(s): Gregory M. Wallraff; Juliann Opitz; William D. Hinsberg; Frances A. Houle; James W. Thackeray; Theodore H. Fedynyshyn; Doris Kang; Martha M. Rajaratnam
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Environmentally stable chemically amplified positive resist containing vinyllactam terpolymers
Author(s): Cheol-Kyu Bok; Cha-Won Koh; Min-Ho Jung; Ki-Ho Baik; Jin-Baek Kim; Jong-Ho Cheong
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Laser-specific photochemistry and lithography of DNQ-4-sulfonic-acid-ester-based photoresists
Author(s): Juergen Bendig; Siegrun Helm; A. Uhl; Lothar Bauch
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Dissolution promotion in novolac-diazoquinone resists
Author(s): Hsiao-Yi Shih; Arnost Reiser
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Measurement of trace acid levels in diazonaphthoquinone photoactive compounds (PACs)
Author(s): Joseph E. Oberlander; Stan F. Wanat; Eleazar Gonzalez; Douglas S. McKenzie
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Predicting photoactive compound (PAC) decomposition tendencies in resists
Author(s): Stan F. Wanat; Joseph E. Oberlander; Eleazar Gonzalez; Douglas S. McKenzie
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Evaluation of an on-site developer blending system on the variability of developer concentration
Author(s): Debra M. Carrieri; Travis A. Lemke; Paul J. Adams; Ashok V. Rao; Wayne L. Funk; Eric V. Estep; Jason B. Johnson
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Synthesis of novolac resin by acid removal after condensation (ARAC) process
Author(s): Michelle M. Cook; M. Dalil Rahman; Dinesh N. Khanna
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Dissolution behavior of phenolic resins and resists as studied by quartz crystal microbalance
Author(s): Hiroshi Ito; Debra Fenzel-Alexander; Gregory Breyta
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Bleaching-induced changes in the dispersion curves of DNQ photoresists
Author(s): Clifford L. Henderson; C. Grant Willson; Ralph R. Dammel; Ron A. Synowicki
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Structure and property relationships of fractionated novolac resins
Author(s): K. Rex Chen; Ranee W. Kwong; George M. Jordhamo; Robert D. Allen; Paula M. Gallagher-Wetmore
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Novel process of isolating novolac resin fractions
Author(s): M. Dalil Rahman; Ping-Hung Lu; Michelle M. Cook
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Thermal stability of naphthodiazoquinone sensitizers
Author(s): Wayne M. Moreau
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Surface tension and adhesion of photo- and electron-beam resists
Author(s): Joachim J. Bauer; G. Drescher; H. Silz; H. Frankenfeld; M. Illig
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Highly sensitive resist material for deep x-ray lithography
Author(s): Wolfgang Ehrfeld; Volker Hessel; Heinz Lehr; Holger Loewe; Martin Schmidt; Rainer Schenk
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Effect of base additive on process latitude in chemically amplified electron-beam resists
Author(s): Satoshi Saito; Naoko Kihara; Takuya Naito; Makoto Nakase; Tetsuro Nakasugi; Yoshimitsu Kato
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Sub-150-nm electron-beam lithography using AZPN114 chemically amplified resist
Author(s): Zheng Cui; R. A. Moody; Ian M. Loader; John G. Watson; Philip D. Prewett
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Electron-beam processing of deep-UV resist
Author(s): Matthew F. Ross; William R. Livesay; Karen E. Petrillo
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Comparative study of positive chemically amplified photoresist performance for x-ray and DUV lithography
Author(s): Azalia A. Krasnoperova; Hiroshi Ito; Gregory Breyta; Debra Fenzel-Alexander
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Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias
Author(s): Menachem Genut; Ofer Tehar-Zahav; Eli Iskevitch; Boris Livshits
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Submicron contact lithography for etching and lift-off applications using an i-line negative-tone photoresist with controllable slope
Author(s): Howard Huang; Dallas M. Lea; Arthur W. Lichtenberger
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Microlithography and resist technology information at your fingertips via SciFinder
Author(s): Rengin Konuk; John R. Macko; Lisa Staggenborg
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Vacuum-vapor-deposited films based on benzo(a)phenoxazine derivatives under surface plasma fluorination
Author(s): Vladimir Enokovich Agabekov; Olga Evgenyevna Ignasheva; Vladimir N. Belyatsky
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Novel combination of photoactive species: photoresists formed from selectively esterified novolacs and polyfunctional photoactive compounds
Author(s): Alfred T. Jeffries; David J. Brzozowy; Ahmad A. Naiini; Paula M. Gallagher-Wetmore
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60-nm copper lines produced by a lift-off technique with 5-keV electrons: experiment and simulation
Author(s): Ulrich A. Jagdhold; Lothar Bauch; Monika Boettcher
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Novel polymeric dyes for bottom antireflective coatings
Author(s): Shuji Ding; Ping-Hung Lu; Ralph R. Dammel; Jianhui Shan; Salem Mehtsun; T. T. Hannigan; D. E. Eberly; Dinesh N. Khanna; Hatsuyuki Tanaka
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Use of highly absorptive azo dyes in photoresist coatings
Author(s): Ping-Hung Lu; Shuji Ding; T. T. Hannigan; D. E. Eberly; Elaine Kokinda; Sunit S. Dixit; Salem Mehtsun; Anthony J. Corso; Dinesh N. Khanna
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Advanced simulation techniques for thick photoresist lithography
Author(s): Warren W. Flack; Gary Newman; Douglas A. Bernard; Juan C. Rey; Yuri Granik; Victor V. Boksha
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Photoresist characterization for lithography simulation: III. Development parameter measurements
Author(s): Clifford L. Henderson; Pavlos C. Tsiartas; Sanju Pancholi; Sajed A. Chowdhury; Katherine D. Dombrowski; C. Grant Willson; Ralph R. Dammel
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Photoresist characterization for lithography simulation: II. Exposure parameter measurements
Author(s): Clifford L. Henderson; Sanju Pancholi; Sajed A. Chowdhury; C. Grant Willson; Ralph R. Dammel
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Use of complex coordination chemistry for the deposition of inorganic materials: spin on metals and photoresist-free lithography
Author(s): Sharon L. Blair; C. Winnie Chu; Ralph R. Dammel; Ross H. Hill
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Refractive indices in thick photoresist films as a function of bake conditions and film exposure
Author(s): Stanley A. Ficner; Ralph R. Dammel; Yvette M. Perez; Allen B. Gardiner; C. Grant Willson
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Diffusivity measurements in polymers: II. Residual casting solvent measurement by liquid scintillation counting
Author(s): Allen B. Gardiner; Anwei Qin; Clifford L. Henderson; Sanju Pancholi; William J. Koros; C. Grant Willson; Ralph R. Dammel; Chris A. Mack; William D. Hinsberg
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Tailoring of a photoactive compound for non-chemically amplified 248-nm resist formulations
Author(s): Michael J. Leeson; Adam Richard Pawloski; Vrad Levering; Wang Yueh; C. Grant Willson
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Diffusivity measurements in polymers: III. Quartz crystal microbalance techniques
Author(s): Katherine E. Mueller; William J. Koros; Yvonne Y. Wang; C. Grant Willson
Show Abstract
Fluorescence detection of photoacid in chemically amplified resists
Author(s): Andrew R. Eckert; Wayne M. Moreau
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Chemical optimization of resist/developer systems tuned for sub-0.4-um process window expansion
Author(s): Medhat A. Toukhy; Karin R. Schlicht; Kimberly A. Tarbox
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Determination of resist and development parameters for i-line photoresist AZ 7800 by experiment and simulation
Author(s): Lothar Bauch; Ulrich A. Jagdhold; Walter Spiess
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Tunable AR for DUV lithography
Author(s): Edward K. Pavelchek; Manuel doCanto
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Dry etching resistance of resist base polymer and its improvement
Author(s): Shinji Kishimura; Yoshika Kimura; Junjiro Sakai; Kouichirou Tsujita; Yasuji Matsui
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Effects of DUV resist sensitivities on lithographic process window
Author(s): Kevin G. Kemp; Daniel J. Williams; Joseph W. Cayton; Peter Steege; Steve D. Slonaker; Richard C. Elliott
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Dependence of optical constants of AZ BARLi bottom coating on bake conditions
Author(s): Ralph R. Dammel; John P. Sagan; Ron A. Synowicki
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Effects of crosslinking agent on lithographic performance of negative-tone resists based on poly(p-hydroxystyrene)
Author(s): Qinghuang Lin; Ahmad D. Katnani; C. Grant Willson
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Investigating positive DUV resist profile on TiN
Author(s): Qizhi He; William L. Krisa; Wei W. Lee; Wei-Yung Hsu; Hong Yang
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Evaluation of TER-SYSTEM resist for 193-nm imaging
Author(s): Donald W. Johnson; Matthew I. Egbe; Cindy X. Chen; Lin Lin; Yihua Liao; Ngalula C. Bukasa; Yasuhiro Suzuki
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Determination of sodium and potassium in aqueous developers by flame emission spectroscopy
Author(s): Robert F. Almeida
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Approach to high-aspect-ratio patterning using cleavable adamantyl resist
Author(s): Satoshi Takechi; Akiko Kotachi; Makoto Takahashi; Isamu Hanyu
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Acid diffusion through polymer films
Author(s): Ping Zhang; Andrew R. Eckert; C. Grant Willson; Stephen E. Webber; Jeff D. Byers
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Wafer-cleaning process after plasma metal etch
Author(s): Didier Louis; Wai-Mun Lee; Douglas Holmes
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Tailoring of novolac resins for photoresist applications using a two-step synthesis procedure
Author(s): Guenther Baehr; Ulrich Westerwelle; Gabi Gruetzner
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Diffusivity measurements in polymers: I. Lithographic modeling results
Author(s): Chris A. Mack; Katherine E. Mueller; Allen B. Gardiner; Anwei Qin; Ralph R. Dammel; William J. Koros; C. Grant Willson
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Wavefront engineering from 500- to 100-nm CD
Author(s): David Levenson
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Optical lithography--thirty years and three orders of magnitude: the evolution of optical lithography tools
Author(s): John H. Bruning
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Photoresist materials: a historical perspective
Author(s): C. Grant Willson; Ralph R. Dammel; Arnost Reiser
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