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Proceedings of SPIE Volume 2726

Optical Microlithography IX
Editor(s): Gene E. Fuller
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Volume Details

Volume Number: 2726
Date Published: 7 June 1996
Softcover: 86 papers (926) pages
ISBN: 9780819421029

Table of Contents
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Patterning ULSI circuits
Author(s): John R. Carruthers
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Challenges to depth-of-focus enhancement with a practical super-resolution technique
Author(s): Tohru Ogawa; Masaya Uematsu; Koichi Takeuchi; Atsushi Sekiguchi; Tatsuji Oda
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Viability of conventional high-NA KrF imaging for sub-0.25-um lithography
Author(s): Timothy R. Farrell; Ronald Nunes; Robert Campbell; Peter Hoh; Donald J. Samuels; Joseph P. Kirk; Will Conley; Junichiro Iba; Tsuyoshi Shibata
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Photolithography using the AERIAL illuminator in a variable-NA wafer stepper
Author(s): Richard Rogoff; Guy Davies; Jan Mulkens; Jos de Klerk; Peter van Oorschot; Gabriele Kalmbach; Johannes Wangler; Wolfgang Rupp
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Signamization
Author(s): Burn Jeng Lin
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Wafer and chip deformation caused by pattern transfer
Author(s): Akira Imai; Norio Hasegawa; Shinji Okazaki; Kouichi Sakaguchi
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Pattern transfer at k1=0.5: get 0.25-um lithography ready for manufacturing
Author(s): Wilhelm Maurer; Kimihiro Satoh; Donald J. Samuels; Thomas Fischer
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Application of deep-UV resist for 0.25-um metal and poly processing
Author(s): William L. Krisa; Christopher J. Progler; Ken Brennan; J. C. Schell
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Approximate models for resist processing effects
Author(s): Timothy A. Brunner; Richard A. Ferguson
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Mathematical and CAD framework for proximity correction
Author(s): Nicolas B. Cobb; Avideh Zakhor; Eugene A. Miloslavsky
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Lithography model tuning: matching simulation to experiment
Author(s): Stephen H. Thornton; Chris A. Mack
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Simulations and experiments with the phase-shift focus monitor
Author(s): Timothy A. Brunner; Rebecca D. Mih
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Top-surface imaging and optical proximity correction: a way to 0.18-um lithography at 248 nm
Author(s): Anne-Marie Goethals; J. Vertommen; Frieda Van Roey; Anthony Yen; Alexander V. Tritchkov; Kurt G. Ronse; Rik M. Jonckheere; Luc Van den Hove
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Effects of radially nonsymmetric pupil filters and multiple-pupil exposure
Author(s): Rudolf M. von Buenau; Hiroshi Fukuda; Tsuneo Terasawa
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How focus budgets are spent: limitations of advanced i-line lithography
Author(s): Andreas Grassmann; Rebecca D. Mih; Andreas Kluwe
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Migrating deep-UV lithography to the 0.25-um regime: issues and outlook
Author(s): Kevin J. Orvek; Sasha K. Dass; Len Gruber; Scott A. Dumford; MaryAnn Piasecki; Gregory W. Pollard; Ian D. Fink
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Measurement of microlithography aerial image quality
Author(s): Joseph P. Kirk; Timothy A. Brunner
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Practical implementation of alternating PSM to memory device of sub-0.25-um technology
Author(s): Chang-Nam Ahn; Hung-Eil Kim; Hee-Bom Kim; Ki-Ho Baik
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0.2-um lithography using i-line and alternating phase-shift mask
Author(s): Patrick Schiavone; Frederic P. Lalanne
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Implementation of attenuated PSMs in DRAM production
Author(s): Tatsuo Chijimatsu; Toru Higashi; Yasuko Tabata; Naoyuki Ishiwata; Satoru Asai; Isamu Hanyu
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Practical topography design for alternating phase-shifting mask
Author(s): Satoshi Tanaka; Hiroko Nakamura; Kenji Kawano; Soichi Inoue
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Development of a particle-detection system for phase-shifting masks
Author(s): Hiroaki Shishido; Shunichi Matsumoto; Yukio Kenbo; Morihisa Hoga; Yasuhiro Koizumi
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Imaging parameter optimization for advanced lithography based on STELLA
Author(s): Rainer Pforr; Leonhard Mader
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Comprehensive focus-overlay-CD correlation to identify photolithographic performance
Author(s): Mircea V. Dusa; Stephen Dellarochetta; Allen C. Fung; Bo Su; Terrence E. Zavecz
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Characterization and optimization of CD control for 0.25-um CMOS applications
Author(s): Kurt G. Ronse; Maaike Op de Beeck; Anthony Yen; Keeho Kim; Luc Van den Hove
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Novel optimization method for antireflection coating
Author(s): Teruyoshi Yao; Eiichi Kawamura
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Novel antireflection method with gradient photoabsorption for optical lithography
Author(s): Toshihiko P. Tanaka; Naoko Asai; Shou-ichi Uchino
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Optical proximity effects and correction strategies for chemical-amplified DUV resists
Author(s): Maaike Op de Beeck; Bert Bruggeman; Harry Botermans; Veerle Van Driessche; Anthony Yen; Alexander V. Tritchkov; Rik M. Jonckheere; Kurt G. Ronse; Luc Van den Hove
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Evaluation of proximity effects using three-dimensional optical lithography simulation
Author(s): Chris A. Mack
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Fast and accurate optical proximity correction based on aerial image simulation
Author(s): Tetsuro Hanawa; Kazuya Kamon; Akihiro Nakae; Shuji Nakao; Koichi Moriizumi
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Customizing proximity correction for process-specific objectives
Author(s): Michael L. Rieger; John P. Stirniman
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Optimization of stepper parameters and their influence on OPC
Author(s): Rakesh R. Vallishayee; Steven A. Orszag; Eytan Barouch
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Influence of process latitude on exposure characteristics
Author(s): Minoru Sugawara; Hiroichi Kawahira; Satoru Nozawa
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ArF MicroStep for 193-nm process development
Author(s): Christopher Sparkes; Larry F. Thompson; Richard J. Travers
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Material limitations to 193-nm lithographic system lifetimes
Author(s): Richard E. Schenker; Fan Piao; William G. Oldham
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Step-and-scan and step-and-repeat: a technology comparison
Author(s): Martin A. van den Brink; Hans Jasper; Steve D. Slonaker; Peter Wijnhoven; Frans Klaassen
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Stepper exposure system for the quarter-micrometer age
Author(s): Hirohiko Shinonaga; Mikio Arakawa
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KrF step-and-scan exposure system using higher-NA projection lens
Author(s): Kazuaki Suzuki; Shinji Wakamoto; Kenji Nishi
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Micrascan III: 0.25-um resolution step-and-scan system
Author(s): David M. Williamson; James A. McClay; Keith W. Andresen; Gregg M. Gallatin; Marc D. Himel; Jorge Ivaldi; Christopher J. Mason; Andrew W. McCullough; Charles Otis; John J. Shamaly; Carol Tomczyk
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Lithographic lens testing: analysis of measured aerial images, interferometric data, and photoresist measurements
Author(s): Donis G. Flagello; Bernd Geh
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Focus and exposure dose determination using stepper alignment
Author(s): Peter Dirksen; Rudy J. M. Pellens; Casper A. H. Juffermans; Marijan E. Reuhman-Huisken; Hans van der Laan
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Stepper overlay performance measurements using the air-turbulence-compensated interferometer
Author(s): Philip D. Henshaw
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Extremely narrow-bandwidth high-repetition-rate laser for high-NA step-and-scan tools
Author(s): Juergen Kleinschmidt; Rainer Paetzel; Peter Heist; Uwe Stamm; Dirk Basting; Michael W. Powell
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High-power KrF excimer laser with a solid state switch for microlithography
Author(s): Hakaru Mizoguchi; Noritoshi Ito; Hiroaki Nakarai; Yukio Kobayashi; Yasuo Itakura; Hiroshi Komori; Osamu Wakabayashi; Taketo Aruga; Takashi Sakugawa; Takehisa Koganezawa
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Efficient all-solid state 213-nm laser source for microlithography
Author(s): Shigeo R. Kubota; Werner Wiechmann; Ling Yi Liu; Michio Oka; Hiroki Kikuchi; Hiroshi Suganuma; Hisashi Masuda; Minoru Takeda
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Improvement of resist pattern fidelity with partial attenuated phase-shift mask
Author(s): Tadao Yasuzato; Shinji Ishida; Kunihiko Kasama
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Swing curve characteristics of halftone PSM with off-axis illumination for i-line lithography
Author(s): Yong-Seok Choi; Hoyoung Kang; Woo-Sung Han; Young-Bum Koh
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Optical proximity correction of bit line pattern in DRAM devices
Author(s): Yongbeom Kim; Chang-Jin Sohn; Hoyoung Kang; Woo-Sung Han; Young-Bum Koh
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Application of alternating phase-shifting masks to sub-quarter-micrometer contact holes
Author(s): Sung-Chul Lim; Jongwook Kye; Sang-Gyun Woo; Sunggi Kim; Hoyoung Kang; Woo-Sung Han; Young-Bum Koh
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Fabrication of single/double crown-shaped capacitors on DRAM cell using phase-shift mask technology
Author(s): John C.H. Lin; Daniel Hao-Tien Lee
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Resolution improvement of isolated line pattern in quarter-micrometer level by layout-optimized assistant pattern method
Author(s): Keiichiro Tounai; Naoaki Aizaki
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Sub-quarter-micrometer contact hole fabrication using annular illumination
Author(s): Miklos Erdelyi; Zsolt Bor; Gabor Szabo; Joseph R. Cavallaro; Michael C. Smayling; Frank K. Tittel; William L. Wilson
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Integrated CAD framework linking VLSI layout editors and process simulators
Author(s): Chaitali Sengupta; Miklos Erdelyi; Zsolt Bor; Joseph R. Cavallaro; Michael C. Smayling; Gabor Szabo; Frank K. Tittel; William L. Wilson
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Improved method for the automated determination of E0 for lithography SPC
Author(s): Mark E. Mason; Robert A. Soper; Cesar M. Garza
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Method for measuring absorbed energy density in photoresist in a laser pattern generation
Author(s): Sergey V. Babin
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Effects of complex illumination on lithography performance
Author(s): Gregory J. Stagaman; Ronald J. Eakin; John C. Sardella; Jeffrey R. Johnson; Charles R. Spinner
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Two new methods for simulating photolithography development in 3D
Author(s): John Joseph Helmsen; Elbridge Gerry Puckett; Phillip Colella; Milo Dorr
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Image and resist profile by sublayer variation in deep-UV lithography
Author(s): Hye-Keun Oh; So-Yeon Baek; Seung-Wook Park; Kun-Sang Lee
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Fabrication of 1D gratings on photoresist for light-scattering and memory-effect measurements
Author(s): Zu-Han Gu; Michel A. Josse
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Fast-marching level-set methods for three-dimensional photolithography development
Author(s): James A. Sethian
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Efficient computational techniques for aerial imaging simulation
Author(s): Douglas A. Bernard; Jiangwei Li; Juan C. Rey; Khosro Rouz; Valery Axelrad
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Fabrication of submicrometer grating by holographic lithography and shadow deposition of metal or insulator layers
Author(s): Lolita G. Rotkina; Alexander V. Lunev; Vladimir B. Smirnitskii; Denis A. Prestinskii
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More stable algorithm for rigorous coupled wave analysis applied to topography simulation in optical lithography and its numerical implementation
Author(s): Seung-Gol Lee; Kyung-Il Lee; Jong-Ung Lee; Yongkyoo Choi; Hong-Seok Kim
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Xe2 excimer lamp (172 nm) for optical lithography
Author(s): Hiroyoshi Tanabe; Yuko Seki; Jun-ichi Yano; Jun Ushioda; Yukio Ogura
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DUV resist profile improvement on TiN-deposited metal layer
Author(s): Chia-Hui Lin; Chun-Cho Chen; Jhy-Sayang Jenq; Maaike Op de Beeck; Luc Van den Hove
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TiSix as a new embedded material for attenuated phase-shift mask
Author(s): Wen-An Loong; Tzu-ching Chen; Shyi-Long Shy; Jin-chi Tseng; Ren-Jang Lin
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Rigorous electromagnetic analysis of aerial image formation in photoresist
Author(s): Sergey V. Babin; John T. Sheridan
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Overlay improvement through overlay modeling
Author(s): Yan A. Borodovsky
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Wafer-level measurement using autofocus
Author(s): Norihiro Yamamoto; Katsuyoshi Kobayashi; Kenji Nakagawa
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Effect of numerical aperture and partial coherence to the resist sidewall angle
Author(s): Hye-Keun Oh; Byoung Sub Nam; So-Yeon Baek
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Probe-beam scan-type autofocus system using position-sensing detector for sub-half-micron lithography tools
Author(s): Dohoon Kim; Byung-Ho Nam; Kag Hyeon Lee; Hai Bin Chung; Hyung Joun Yoo
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Alternate rigorous method for photolithographic simulation based on profile sampling
Author(s): Bernd H. Kleemann; Joerg Bischoff; Alfred K. K. Wong
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Advancing optical lithography using catadioptric projection optics and step-and-scan
Author(s): Harry Sewell
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Micrascan adaptive x-cross correlative independent off-axis modular (AXIOM) alignment system
Author(s): Stan Drazkiewicz; Gregg M. Gallatin; Joe Lyons
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193-nm imaging using a small-field high-resolution imaging resist exposure tool
Author(s): Nadeem Hasan Rizvi; Malcolm C. Gower; Dominic Ashworth; Neil Sykes; Phil T. Rumsby; Bruce W. Smith; Francis N. Goodall; Ronald Albert Lawes
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Lithographic performance at subquarter micrometer using DUV stepper with off-axis illumination technology
Author(s): Chang-Ming Dai
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Design considerations and performance of 1-kHz KrF excimer lasers for DUV lithography
Author(s): Richard G. Morton; Igor V. Fomenkov; William N. Partlo; Palash P. Das; Richard L. Sandstrom
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Lithographic performance at 0.3- to 0.35-um patterns by using i-line stepper with off-axis illumination technology
Author(s): Chin-Lung Lin; Chang-Ming Dai; Chih-Yung Lin
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Postexposure baking-temperature effect on resist profile with bottom antireflective coating
Author(s): Chang-Ming Dai; Chin-Lung Lin; She-Chang Tai; James E. Lamb; Masaru Iida
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Evaluation of OPC efficacy
Author(s): Franklin M. Schellenberg; Hua Zhang; Jim Morrow
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Method of easily extracting resist development parameters for lithography simulation
Author(s): Kevin D. Lucas; Vladimir V. Ivin; Vladislav Kudrya; Dmitry Yu. Larin; Tariel M. Makhviladze; Marina G. Medvedeva; A. A. Rogor; Sergey V. Verzunov; D. C. Yang
Characterization of resists and antireflective coatings by spectroscopic ellipsometry in the UV and deep-UV range
Author(s): Pierre Boher; Jean-Philippe Piel; Christophe Defranoux; Jean-Louis P. Stehle; Louis Hennet
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