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Proceedings of SPIE Volume 2724

Advances in Resist Technology and Processing XIII
Editor(s): Roderick R. Kunz
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Volume Details

Volume Number: 2724
Date Published: 14 June 1996
Softcover: 70 papers (786) pages
ISBN: 9780819421005

Table of Contents
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Patterning ULSI Circuits
Author(s): John R. Carruthers
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Science and technolgy policy in the 104th Congress
Author(s): Zoe Lofgren
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Lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP)
Author(s): Will Conley; Gregory Breyta; William R. Brunsvold; Richard A. Di Pietro; Donald C. Hofer; Steven J. Holmes; Hiroshi Ito; Ronald Nunes; Gabrielle Fichtl; Peter Hagerty; James W. Thackeray
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PED-stabilized chemically amplified photoresist
Author(s): Takayoshi Tanabe; Yasutaka Kobayashi; Akira Tsuji
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Quarter- and subquarter-micron deep-UV lithography with chemically amplified positive resist
Author(s): Yasunobu Onishi; Kazuo Sato; Kenzi Chiba; Masafumi Asano; Hirokazu Niki; Rumiko Horiguchi Hayase; Takao Hayashi
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Undercut elimination in DUV negative systems: application to lithography and etching of metal levels
Author(s): Francoise Vinet; Michel Heitzmann; Thierry Mourier; Dominique Poncet; Bernard Previtali; C. Vizioz; Patrick Jean Paniez; Andre Schiltz
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Reduction of substrate dependency of chemically amplified resist
Author(s): Jun-Sung Chun; Cheol-Kyu Bok; Ki-Ho Baik
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Free volume variations during exposure and PEB of DUV positive resists: effect on dissolution properties
Author(s): Laurent Pain; Charles Le Cornec; Charles Rosilio; Patrick Jean Paniez
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Postexposure bake characterization and parameter extraction for positive deep-UV resists through broad-area exposure experiments
Author(s): Marco Antonio Zuniga; Andrew R. Neureuther
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Substrate effects of silicon nitride on i-line and deep-UV lithography
Author(s): Byeong-Chan Kim; Hoon Huh; Jaejeong Kim
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Substrate effect in chemically amplified resist
Author(s): Shigeyasu Mori; Takeo Watanabe; Kouichirou Adachi; Takashi Fukushima; Keichiro Uda; Yuichi Sato
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Stable process for chemically amplified resists using a new adhesion promotor
Author(s): Masayuki Endo; Satoko Kawasaki; Akiko Katsuyama
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Method of comparing chemical contrast with resist contrast
Author(s): Gregory M. Wallraff; Juliann Opitz; Gregory Breyta; Hiroshi Ito; Bruce M. Fuller
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Design of high performance chemically amplified resist
Author(s): Takaaki Niinomi; Hiroshi Tomiyasu; Yasuhiro Kameyama; Michinori Tsukamoto; Yuki Tanaka; Jun Fujita; Satoshi Shimomura; Tameichi Ochiai
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Application of photodecomposable base concept to two-component deep-UV chemically amplified resists
Author(s): Satoru Funato; N. Kawasaki; Yoshiaki Kinoshita; Seiya Masuda; Hiroshi Okazaki; Munirathna Padmanaban; T. Yamamoto; Georg Pawlowski
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Synthesis and lithographic performance of highly branched polymers from hydroxyphenylmethylcarbinols
Author(s): James R. Sounik; Richard Vicari; Ping-Hung Lu; Elaine Kokinda; Stanley A. Ficner; Ralph R. Dammel
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Effect of substituent groups of phenol-derivative dissolution inhibitors on inhibition efficiency
Author(s): Naoko Kihara; Satoshi Saito; Takuya Naito; Tohru Ushirogouchi; Koji Asakawa; Makoto Nakase
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Halation reduction for single-layer DUV resist processing
Author(s): Hiroshi Yoshino; Toshiro Itani; Shuichi Hashimoto; Mitsuharu Yamana; Norihiko Samoto; Kunihiko Kasama
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Acetal-based three-component CARs: a versatile concept to tailor optical properties of resists
Author(s): Munirathna Padmanaban; Yoshiaki Kinoshita; N. Kawasaki; Hiroshi Okazaki; Satoru Funato; Georg Pawlowski
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Manipulation of the thermal properties of positive DUV polymers
Author(s): Roger F. Sinta; George G. Barclay; Timothy G. Adams; David R. Medeiros
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Narrow polydispersity polymers for microlithography: synthesis and properties
Author(s): George G. Barclay; C. J. Hawker; Hiroshi Ito; Arturo J. Orellana; P. R.L. Malenfant; Roger F. Sinta
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Characterization of Shipley's positive deep-UV experimental resists: deblocking studies
Author(s): James F. Cameron; Arturo J. Orellana; Martha M. Rajaratnam; Roger F. Sinta
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Photosensitization in dyed and undyed APEX-E DUV resist
Author(s): John L. Sturtevant; Will Conley; Stephen E. Webber
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Chemically amplified negative-tone deep-UV photoresist based on poly(alkoxy styrenes) containing acetal groups
Author(s): Joo Hyeon Park; Seong-Ju Kim; Ji-Hong Kim; Dong-Chul Seo; Ki-Dae Kim; Sun-Yi Park; Hosull Lee
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Completely water-processable and other chemically amplified resists from maleic anhydride copolymers
Author(s): Alexander M. Vekselman; Graham D. Darling
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Novel main chain scission positive-tone photoresists for 248-nm lithography with wide post-exposure processing latitude as an alternative to chemically amplified systems
Author(s): Neil D. McMurdie; James B. O'Dwyer
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Negative-tone resist system using vinyl cyclic acetal crosslinker
Author(s): Wu-Song Huang; Kim Y. Lee; K. Rex Chen; Dominic Schepis
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Design and properties of new deep-UV positive photoresist
Author(s): Sang-Jun Choi; Si-Young Jung; Chang-Hwan Kim; Choon-Geun Park; Woo-Sung Han; Young-Bum Koh; Moon-Yong Lee
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Protecting groups for 193-nm photoresists
Author(s): Robert D. Allen; Ratnam Sooriyakumaran; Juliann Opitz; Gregory M. Wallraff; Richard A. Di Pietro; Gregory Breyta; Donald C. Hofer; Roderick R. Kunz; Saikumar Jayaraman; Robert A. Shick; Brian L. Goodall; Uzodinma Okoroanyanwu; C. Grant Willson
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Bilayer resist approach for 193-nm lithography
Author(s): Ulrich P. Schaedeli; Eric Tinguely; Andrew J. Blakeney; Pasquale A. Falcigno; Roderick R. Kunz
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Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography
Author(s): Thomas I. Wallow; Francis M. Houlihan; Omkaram Nalamasu; Edwin A. Chandross; Thomas X. Neenan; Elsa Reichmanis
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Limits to etch resistance for 193-nm single-layer resists
Author(s): Roderick R. Kunz; Susan C. Palmateer; Anthony R. Forte; Robert D. Allen; Gregory M. Wallraff; Richard A. Di Pietro; Donald C. Hofer
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Novel alkaline-soluble alicyclic polymer poly(TCDMACOOH) for ArF chemically amplified positive resists
Author(s): Katsumi Maeda; Kaichiro Nakano; Takeshi Ohfuji; Etsuo Hasegawa
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Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography
Author(s): Takeshi Ohfuji; Katsumi Maeda; Kaichiro Nakano; Etsuo Hasegawa
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TSI process performance in a transformer-coupled plasma dry develop tool
Author(s): John M. Hutchinson; Yosias Melaku; Wendy Nguyen; Siddhartha Das
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Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development
Author(s): Allen H. Gabor; Robert D. Allen; Paula M. Gallagher-Wetmore; Christopher Kemper Ober
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Effect of low-molecular-weight dissolution-promoting compounds in DNQ-novolac positive resist
Author(s): Yasumasa Kawabe; Shiro Tan; Fumiyuki Nishiyama; Shinji Sakaguchi; Tadayoshi Kokubo; Andrew J. Blakeney; Lawrence Ferreira
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Contrast-boosted resist using a polarity-change reaction during aqueous base development
Author(s): Shou-ichi Uchino; Takumi Ueno; Sonoko Migitaka; Jiro Yamamoto; Toshihiko P. Tanaka; Fumio Murai; Hiroshi Shiraishi; Michiaki Hashimoto
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Novel class of highly selective divanillin-based PACs
Author(s): Arturo N. Medina; Lawrence Ferreira; Sobhy P. Tadros; Joseph J. Sizensky; M. Fregeolle; Andrew J. Blakeney; Medhat A. Toukhy
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Bake mechanisms in novolak-based photoresist films: investigation by contact angle measurements
Author(s): Emilienne Fadda; C. Clarisse; Patrick Jean Paniez
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Selectively esterified novolac resins: a study of resist properties as a function of novolac molecular weight and composition
Author(s): Alfred T. Jeffries; David J. Brzozowy; Bernard T. Beauchemin; Ahmad A. Naiini; Edward A. Fitzgerald; Paula M. Gallagher-Wetmore
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Factors affecting the dissolution rate of novolac resins II: developer composition effects
Author(s): Clifford L. Henderson; Pavlos C. Tsiartas; Logan L. Simpson; Kelly D. Clayton; Sanju Pancholi; Adam R. Pawlowski; C. Grant Willson
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Diffusion limitations in high-resolution lithography
Author(s): Lothar Bauch; Ulrich A. Jagdhold; Monika Boettcher; Georg G. Mehliss
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Application of DNQ-based microlithography to patterning bioactive molecules and cells
Author(s): Dan V. Nicolau; Takahisa Taguchi; Hiroshi Taniguchi; Susumu Yoshikawa; Mircea V. Dusa
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Lithographic characterization of AZ 7800 high-resolution photoresist
Author(s): Stanley A. Ficner; Oghogho Alile; Ping-Hung Lu; Elaine Kokinda; Ralph R. Dammel
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Diazonaphthoquinone-5-sulfonate composition variants: synthesis and properties
Author(s): Anthony Zampini; Harold F. Sandford; William J. Cardin; Michael J. O'Leary
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Standing waves reducing additives
Author(s): Medhat A. Toukhy; G. McCormick
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Isolation of novolak resin at low temperature
Author(s): M. Dalil Rahman; Daniel P. Aubin; Dinesh N. Khanna
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Dissolution behavior of novolak resins
Author(s): K. Rex Chen; George M. Jordhamo; Wayne M. Moreau
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High-performance TSI process for e-beam using vapor-applied crosslinking silylating agents
Author(s): Mathias Irmscher; Bernd Hoefflinger; Reinhard Springer; Craig Stauffer; William Peterson
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Evaluation of the dry resist octavinylsilsesquioxan and its application to three-dimensional electron-beam lithography
Author(s): Hans W. P. Koops; Sergey V. Babin; Mark A. Weber; G. Dahm; A. Holopkin; M. N. Lyakhov
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Deep-UV hardening of deep-UV resists
Author(s): George M. Jordhamo; Wayne M. Moreau
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Excimer laser photoresist stripping
Author(s): Menachem Genut; Ofer Tehar-Zahav; Eli Iskevitch; Boris Livshits
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Negative resists for electron-beam lithography utilizing acid-catalyzed intramolecular dehydration of phenylcarbinol
Author(s): Sonoko Migitaka; Shou-ichi Uchino; Takumi Ueno; Jiro Yamamoto; Kyoko Kojima; Michiaki Hashimoto; Hiroshi Shiraishi
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Exposing of surface layers of PMMA structures by low-energy (1000-6000 eV) electron irradiation
Author(s): Tatyana Borzenko; Yuri I. Koval; Vladimir A. Kudryashov
Photoresist stabilization for ion implant processing
Author(s): Matthew F. Ross; William R. Livesay; Vladimir Starov; Kirk Ostrowski; Suk Yi Wong
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High-throughput process optimization using the EZ technique
Author(s): Medhat A. Toukhy; Karin R. Schlicht; Patricia Morra; Somboun Chanthalyma
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Development of two new thick-film photoresists
Author(s): Stanley A. Ficner; James Hermanowski; Ping-Hung Lu; Elaine Kokinda; Yvette M. Perez; Ralph R. Dammel
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New contributions to automated processing using different photoresists for microelectronics fabrication
Author(s): Dumitru Gh. Ulieru
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New process for resist removal after lithography process using adhesive tape
Author(s): Tatsuya Kubozono; Yutaka Moroishi; Yoshio Ohta; Hideaki Shimodan; Noboru Moriuchi
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Highly absorbing ARC for DUV lithography
Author(s): Edward K. Pavelchek; James D. Meador; Douglas J. Guerrero; James E. Lamb; Ajit Kache; Manuel doCanto; Timothy G. Adams; David R. Stark; Daniel A. Miller
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Latitude of the BAR process compared to the monolayer and TAR processes for 0.35-um design rules at gate level
Author(s): Sandrine Andre; Andre P. Weill
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Critical dimension control for i-line 0.35-um device using a new antireflective coating
Author(s): Daniel Claire Baker; Elliott Sean Capsuto
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Enhanced i-line lithography using AZ BARLi coating
Author(s): T.-S. Yang; Taeho H. Kook; W. A. Josephson; Mark A. Spak; Ralph R. Dammel
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Removable organic antireflection coating
Author(s): John L. Sturtevant; Linda J. Insalaco; Tony D. Flaim; Vandana N. Krishnamurthy; James D. Meador; John S. Petersen; Andrew R. Eckert
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Optimization of i-line resist process for 0.5-um polysilicon gate structures using a top-coat layer
Author(s): Jean-Paul E. Chollet; Marie-Therese Basso
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Modeling of bottom antireflection layers: sensitivity to optical constants
Author(s): Ralph R. Dammel; Robert A. Norwood
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Calibration of chemically amplified resist models
Author(s): Jeff D. Byers; John S. Petersen; John L. Sturtevant
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Examination of isolated and grouped feature bias in positive-acting chemically amplified resist systems
Author(s): John S. Petersen; Jeff D. Byers
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