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Proceedings of SPIE Volume 2440

Optical/Laser Microlithography VIII
Editor(s): Timothy A. Brunner
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Volume Details

Volume Number: 2440
Date Published: 26 May 1995
Softcover: 82 papers (960) pages
ISBN: 9780819417886

Table of Contents
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193-nm full-field step-and-scan prototype at MIT Lincoln Laboratory
Author(s): Michael S. Hibbs; Roderick R. Kunz
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Step and scan: the maturing technology
Author(s): Harry Sewell
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Comparative study of i-line and DUV lithography for 0.35 um and beyond
Author(s): Nandasiri Samarakone; Wayne H. Chang; Erik Tandberg; Christina Elliot; Timothy Y. Wang
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Lithography strategy for printing 0.35 um devices
Author(s): Satyendra S. Sethi; Mark William Barrick; Jason Massey; C. Froelich; Michele R. Weilemann; F. Garza
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Implementation of i-line lithography to 0.30 um design rules
Author(s): KeunYoung Kim; Hung-Eil Kim; Il-Ho Lee; Jin-Soo Kim; Jun-Sung Chun; Ikboum Hur; Seung-Chan Moon; Ki-Ho Baik; Soo-Han Choi
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Low cost of ownership KrF excimer laser using a novel pulse power and chamber configuration
Author(s): William N. Partlo; Richard L. Sandstrom; Igor V. Fomenkov; Palash P. Das
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KrF excimer laser with repetition rates of 1 kHz for DUV lithography
Author(s): Rainer Paetzel; Juergen Kleinschmidt; Ulrich Rebhan; Jim Franklin; Heinrich Endert
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Feasibility study of argon fluoride excimer laser for microlithography
Author(s): Hiroshi Komori; Hidetomi Ochi; Osamu Wakabayashi; Hakaru Mizoguchi
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Degradation of fused silica at 193 nm and 213 nm
Author(s): Richard E. Schenker; Ludwig Eichner; Hem Vaidya; Sheila Vaidya; William G. Oldham
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Deep-UV lithography using continuous-wave 266-nm radiation from an all solid state frequency quadrupled Nd:YAG laser
Author(s): Hiroshi Suganuma; Minoru Takeda; Michio Oka; Naoto Ozaki; Motohisa Haga; Shigeo R. Kubota
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UV radiometry issues for UV stabilization of photoresist
Author(s): Jianou Shi; Steven Paul Grindle; Sharine Chen; Greg Owen; Linda J. Insalaco; Christopher L. Cromer; Laurie S. Goldner
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Improvement of the ArF laser for photolithography
Author(s): Alexander N. Novoselov; Boris A. Konstantinov; Victor G. Nikiforov; Boris F. Trinchuk
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Feature biasing versus feature-assisted lithography: a comparison of proximity correction methods for 0.5*(lambda/NA) lithography
Author(s): Rainer Pforr; Kurt G. Ronse; Luc Van den Hove; Anthony Yen; Shane R. Palmer; Gene E. Fuller; Oberdan W. Otto
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Reduction of ASIC gate-level line-end shortening by mask compensation
Author(s): Joseph G. Garofalo; John DeMarco; J. Bailey; Jiabei Xiao; Sheila Vaidya
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Integrating proximity effect corrections with photomask data preparation
Author(s): Oberdan W. Otto; Richard C. Henderson
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OPTIMASK: an OPC algorithm for chrome and phase-shift mask design
Author(s): Eytan Barouch; Uwe Hollerbach; Rakesh R. Vallishayee
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Practical evaluation of optical-proximity effect correction by EDM methodology
Author(s): Minoru Sugawara; Hiroichi Kawahira; Keisuke Tsudaka; Satoru Nozawa
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Study of optical proximity effects using off-axis illumination with attenuated phase shift mask
Author(s): Chang-Nam Ahn; Ki-Ho Baik; Yong-Suk Lee; Hung-Eil Kim; Ikboum Hur; YoungSik Kim; Ju-Hwan Kim; Soo-Han Choi
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Automatic optical proximity correction with optimization of stepper condition
Author(s): Soichi Inoue; Tadahito Fujisawa; Satoshi Tanaka; Shoji Mimotogi; Akiko Nikki; Ichiro Mori
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Quantifying proximity and related effects in advanced wafer processes
Author(s): John P. Stirniman; Michael L. Rieger; Robert E. Gleason
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Fast optical proximity correction: analytical method
Author(s): Satomi Shioiri; Hiroyoshi Tanabe
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Sub-micron low-k1 imaging characteristics using a DUV printing tool and binary masks
Author(s): Pei-yang Yan; Robert F. Hainsey; Jeff N. Farnsworth; Julaine H. Neff
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Effect of pattern density for contact windows in an attenuated phase shift mask
Author(s): Ikboum Hur; Ju-Hwan Kim; Il-Ho Lee; Hung-Eil Kim; Chang-Nam Ahn; Ki-Ho Baik; Soo-Han Choi
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Automated design of halftoned double-exposure phase-shifting masks
Author(s): Yao-Ting Wang; Yagyensh C. Pati; Hisashi Watanabe; Thomas Kailath
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Automated layout of mask assist-features for realizing 0.5 k1 ASIC lithography
Author(s): Joseph G. Garofalo; Oberdan W. Otto; Raymond A. Cirelli; Robert L. Kostelak; Sheila Vaidya
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Fast, low-complexity mask design
Author(s): Nicolas B. Cobb; Avideh Zakhor
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Optical proximity correction on attenuated phase-shifting photo mask for dense contact array
Author(s): Yongkyoo Choi; Young Jin Song; Hong-Seok Kim; Woo S. Kim
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Influence of photoresist on the optical performance of high NA steppers
Author(s): Donis G. Flagello; Richard Rogoff
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Pattern-dependent correction of mask topography effects for alternating phase-shifting masks
Author(s): Richard A. Ferguson; Alfred K. K. Wong; Timothy A. Brunner; Lars W. Liebmann
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Effects of wafer topography on the formation of polysilicon gates
Author(s): Robert John Socha; Alfred K. K. Wong; Myron R. Cagan; Zoran Krivokapic; Andrew R. Neureuther
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Fast algorithms for 3D high NA lithography simulation
Author(s): Qi-De Qian; Francisco A. Leon
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Comparison of scalar and vector modeling of image formation in photoresist
Author(s): Chris A. Mack; Ching-Bo Juang
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Three-dimensional reflective-notching simulation using multipole-accelerated physical optics approximation
Author(s): Michael S. Yeung; Andrew R. Neureuther
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Practical use of simulation for advanced lithography techniques
Author(s): Leonhard Mader; Norbert Lehner
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Yield modeling and enhancement for optical lithography
Author(s): Edward W. Charrier; Chris A. Mack
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Simulation study of a new phase-shifting mask: halftone-rim
Author(s): Wen-An Loong; Chin-hwa Yeh; Shyi-Long Shy
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Focus effects in submicron optical lithography, part 4: metrics for depth of focus (Oral Standby)
Author(s): Chris A. Mack
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Focus shift and process latitude of contact holes on attenuated phase-shifting masks
Author(s): Alfred K. K. Wong; Richard A. Ferguson; Ronald M. Martino; Andrew R. Neureuther
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Optical proximity correction using a transmittance-controlled mask (TCM)
Author(s): Woo-Sung Han; Chang-Jin Sohn; Yongbeom Kim; Keeho Kim; Hoyoung Kang; Young-Bum Koh; Moon-Yong Lee
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New system for fast submicron laser direct writing
Author(s): Heinz Kueck; Michael Bollerott; Wolfgang Doleschal; Andreas Gehner; Wolfram Grundke; Detlef Kunze; Rolf Melcher; Joerg Paufler; Rolf Seltmann; Guenter Zimmer
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Application of alternating phase shift mask to device fabrication
Author(s): Sunggi Kim; Sang-Gyun Woo; Woo-Sung Han; Young-Bum Koh; Moon-Yong Lee
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Contact performance with an attenuated phase shift reticle and variable partial coherence
Author(s): William L. Krisa; Cesar M. Garza; Robert D. Bennett
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Role of illumination and thin film layers on the printability of defects
Author(s): Robert John Socha; Andrew R. Neureuther
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Partial rim: a new design of rim phase shift mask for submicron contact holes
Author(s): Zheng Cui; Philip D. Prewett; Brian Martin
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Relative merits of using maximum error versus 3(sigma) in describing the performance of laser-exposure reticle writing systems
Author(s): Henry Chris Hamaker
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Sub-half-micron i-line photolithography process using AZ BARLi
Author(s): Jeffrey R. Johnson; Todd H. Gandy; Gregory J. Stagaman; Ronald J. Eakin; John C. Sardella; Charles R. Spinner; Fu-Tai Liou; Mark A. Spak
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Antireflection coating process characterization and improvement for DUV lithography at 0.25 um: ground rules
Author(s): John L. Sturtevant; M. Chaara; R. Elliot; Larry David Hollifield; Robert A. Soper; David R. Stark; Nathan S. Thane; John S. Petersen
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Impact of optical thin film effects on CD control in DUV lithography
Author(s): Raymond A. Cirelli; Joseph G. Garofalo; Eric L. Raab; Jiabei Xiao; Robert John Socha; Sheila Vaidya
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Improving the backend focus budget for 0.5 um lithography
Author(s): Satyendra S. Sethi; Alex Flores; P. McHale; R. Booth; Steve W. Graca; S. Frezon; C. Fruga
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0.35-um i-line poly processing with a bottom antireflective coating (BARC)
Author(s): William L. Krisa; Cesar M. Garza; J. A. McKee
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Influence of substrate reflectivity on linewidth control
Author(s): Hans Vloeberghs; Ivan S. Daraktchiev
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Characterization of 5-X stepper lenses to improve depth of focus
Author(s): David P. Paul; Maurice A. Hamel; Ken A. Lavallee
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Comparison of state-of-the-art DUV lenses
Author(s): Tracy K. Lindsay; Neal T. Sullivan; Sasha K. Dass; Gregory W. Pollard; Bill Jones
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Detailed study of a phase shift focus monitor
Author(s): Graham M. Pugh; Brian R. DeWitt; Craig B. Sager; Patrick Reynolds
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Latent image metrology for production wafer steppers
Author(s): Peter Dirksen; Walter de Laat; Henry J. L. Megens
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Automatic laser-scanning focus detection method using printed focus pattern
Author(s): Kyoichi Suwa; Hiroki Tateno; Nobuyuki Irie; Shigeru Hirukawa
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New generation i-line lens for 0.35-um lithography
Author(s): Hiroyuki Ishii; Yoshio Kawanobe
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In-situ optimization of an i-line optical projection lens
Author(s): Chunsheng Huang
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Dual-wavelength interferometer for testing projection lenses
Author(s): Klaus R. Freischlad; Chunsheng Huang
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Subquarter micron optical lithography with practical superresolution technique
Author(s): Tohru Ogawa; Masaya Uematsu; Fumikatsu Uesawa; Mitsumori Kimura; Hideo Shimizu; Tatsuji Oda
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Fidelity comparison of island patterns with different types of illuminations and phase shift masks
Author(s): Seong-Yong Moon; Woo-Sung Han; Sang-Gyun Woo; Chang-Jin Sohn; Chul Hong Kim; Young-Bum Koh; Moon-Yong Lee
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Strong phase shifter mask application to 0.25-um and 0.35-um technologies
Author(s): Gerald Li; Yao Ching Ku; William Henry Lea
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Effect of resist surface insoluble layer in attenuated phase-shift mask for window pattern formation
Author(s): Tadao Yasuzato; Shinji Ishida; Kunihiko Kasama
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New spatial frequency doubling method for sub-0.15-um optical lithography
Author(s): Akihiro Otaka; Yoshio Kawai; Akinobu Tanaka; Tadahito Matsuda
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New interferometric phase-shifting technique for sub-half-micron laser microlithography
Author(s): Miklos Erdelyi; Chaitali Sengupta; Zsolt Bor; Joseph R. Cavallaro; Motoi Kido; Michael C. Smayling; Frank K. Tittel; William L. Wilson; Gabor Szabo
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Optimum combination of source, mask, and filter for better lithographic performance
Author(s): Hye-Keun Oh; Jeong-Ung Koo; Young-Min Cho; Byung-Sun Park; Hai Bin Chung; Hyung Joun Yoo
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Optical lithography technique with dummy diffraction mask for 0.20 um T-shaped gate formation
Author(s): Byung-Sun Park; Yong-Ho Oh; Sang-Soo Choi; Hai Bin Chung; Hyung Joun Yoo
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Investigation of lithography yield-loss issues from focusing/leveling system of advance stepper
Author(s): Daniel Hao-Tien Lee; Chia-Jen Cheng; Tah-Te Shih
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Contributions of stepper lenses to systematic CD errors within exposure fields
Author(s): Hua-Yu Liu; Crid Yu; Robert E. Gleason
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Printability study of opaque and transparent defects using standard and modified illumination
Author(s): Sonya Yvette Shaw; Shane R. Palmer; Steven J. Schuda
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Air-turbulence-compensated interferometer for IC manufacturing
Author(s): Steven A. Lis
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Total overlay analysis for designing future aligner
Author(s): Nobutaka Magome; Hidemi Kawai
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Base-line error-free non-TTL alignment system using oblique illumination for wafer steppers
Author(s): Dohoon Kim; Kag Hyeon Lee; Yong-Ho Oh; Jong-Hyun Lee; Hai Bin Chung; Hyung Joun Yoo
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Photolithographic mask aligner based on modified moire technique
Author(s): Rina Sharma; N. D. Kataria; V. N. Ojha; Alok K. Kanjilal; Ram Narain; Vijay Trimbak Chitnis; Yoshiyuki Uchida
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Process capabilities of critical dimensions at gate mask
Author(s): Zoran Krivokapic; William D. Heavlin; David F. Kyser
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Using the focus monitor test mask to characterize lithographic performance
Author(s): Rebecca D. Mih; Alexander Lee Martin; Timothy A. Brunner; David T. Long; Diane L. Brown
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Impact of local partial coherence variations on exposure tool performance
Author(s): Yan A. Borodovsky
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Lithography and the future of Moore's law
Author(s): Gordon E. Moore
Lithography for ULSI
Author(s): Shinji Okazaki
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SEMATECH and the national technology roadmap: needs and challenges
Author(s): Karen H. Brown
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