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Proceedings of SPIE Volume 2438

Advances in Resist Technology and Processing XII
Editor(s): Robert D. Allen
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Volume Details

Volume Number: 2438
Date Published: 9 June 1995
Softcover: 81 papers (918) pages
ISBN: 9780819417862

Table of Contents
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Considerations in the development of deep-UV photoresist materials and processes
Author(s): Will Conley
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Influence of acid generator structure on T-top formation in high-temperature bake processes for environmental stabilization
Author(s): Hiroshi Ito; Gregory Breyta; Donald C. Hofer; Thomas Fischer; R. Bruce Prime
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Effect of dissolution inhibitors on the dissolution characteristics of chemically amplified positive-tone electron beam resist
Author(s): Hideo Horibe; Teruhiko Kumada; Shigeru Kubota; Yoshika Kimura
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DUV positive resist system designed for Micrascan use
Author(s): James W. Thackeray; Timothy G. Adams; Michael Francis Cronin; Theodore H. Fedynyshyn; J. Michael Mori; John S. Petersen; Roger F. Sinta
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Structural design of ketal and acetal blocking groups in two-component chemically amplified positive DUV resists
Author(s): Carlo Mertesdorf; Norbert Muenzel; Heinz E. Holzwarth; Pasquale A. Falcigno; Hans-Thomas Schacht; Ottmar Rohde; Reinhard Schulz; Sydney G. Slater; David Frey; Omkaram Nalamasu; Allen G. Timko; Thomas X. Neenan
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Kinetics of chemically amplified resists
Author(s): Gregory M. Wallraff; William D. Hinsberg; Frances A. Houle; Juliann Opitz; Dale Hopper; John M. Hutchinson
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Optimization of dissolution-rate characteristics of chemically amplified positive resist
Author(s): Toshiro Itani; Haruo Iwasaki; Hiroshi Yoshino; Masashi Fujimoto; Kunihiko Kasama
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Optimization of CD control in DUV positive resists: influence of photoresist viscoelastic properties on PEB conditions
Author(s): Francoise Vinet; N. Buffet; Pierre Fanton; Laurent Pain; Patrick Jean Paniez
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Investigation into the origin of microbridging in chemically amplified negative-tone photoresists
Author(s): Leo L. Linehan; Randolph S. Smith; Judy Dorn; James T. Fahey; Wayne M. Moreau; Gary T. Spinillo; Erik A. Puttlitz; James P. Collins
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Study for the design of high-resolution novolak-DNQ photoresist: the effects of low-molecular-weight phenolic compounds on resist systems
Author(s): Hidetoshi Miyamoto; Toshio Nakamura; Katsumi Inomata; Toshiyuki Ota; Akira Tsuji
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Profile defects in novolac/DNQ resists: I. formation of microgrooves
Author(s): Peter Trefonas; George P. Mirth; Michael J. Monaghan; Pamela Turci; L. DeJordy; Catherine C. Meister
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Performance properties of near-monodisperse novolak resins
Author(s): Robert D. Allen; K. Rex Chen; Paula M. Gallagher-Wetmore
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Effect of molecular weight distribution on the dissolution properties of novolac blends
Author(s): Pavlos C. Tsiartas; Logan L. Simpson; Anwei Qin; C. Grant Willson; Robert D. Allen; Val J. Krukonis; Paula M. Gallagher-Wetmore
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Formulation and modeling of dyed positive i-line resist for control of the reflective notching and CD variation
Author(s): Marina V. Plat; William R. Brunsvold; Randolph S. Smith; Nicholas K. Eib; Christopher F. Lyons
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Effect of PAC structure and resist morphology on the control of surface inhibition in positive photoresist systems
Author(s): Bernard T. Beauchemin; Rodney J. Hurditch; Medhat A. Toukhy; Andrew J. Blakeney
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Spectroscopic characterization of molecular interactions between DNQ-PACs and phenolic resins using selectively nitrogen-15 labeled DNQs
Author(s): Marie Borzo; Joseph J. Rafalko; Monica Joe; Ralph R. Dammel; M. Dalil Rahman; Martine A. Ziliox
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Mechanism of inhibitor action in novolak film
Author(s): Hsiao-Yi Shih; Arnost Reiser
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Evaluation of chemically amplified resist based on adamantyl methacrylate for 193-nm lithography
Author(s): Makoto Takahashi; Satoshi Takechi; Yuko Kaimoto; Isamu Hanyu; Naomichi Abe; Koji Nozaki
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Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer
Author(s): Kaichiro Nakano; Katsumi Maeda; Shigeyuki Iwasa; Takeshi Ohfuji; Etsuo Hasegawa
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Chemically ampilified ArF excimer laser resists using the absorption band shift method
Author(s): Makoto Nakase; Takuya Naito; Koji Asakawa; Akinori Hongu; Naomi Shida; Tohru Ushirogouchi
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Optimization of a 193-nm silylation process for sub-0.25-um lithography
Author(s): Susan C. Palmateer; Roderick R. Kunz; Mark W. Horn; Anthony R. Forte; Mordechai Rothschild
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High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography
Author(s): Katsumi Maeda; Takeshi Ohfuji; Naoaki Aizaki; Etsuo Hasegawa
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Investigation of deep-ultraviolet photoresists on TiN substrates
Author(s): Kim R. Dean; Ronald A. Carpio; Georgia K. Rich
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Effects of substrate treatment in positive chemically amplified resist
Author(s): Akihiro Usujima; Kazuki Tago; Akira Oikawa; Kenji Nakagawa
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Environmentally stable chemically amplified resist effects of organic salt additives
Author(s): Ei Yano; Yohko Kuramitsu; Keiji Watanabe; Takahisa Namiki; Koji Nozaki; Miwa Igarashi
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Effect of basic additives on sensitivity and diffusion of acid in chemical amplification resists
Author(s): Koji Asakawa; Tohru Ushirogouchi; Makoto Nakase
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Shot-size reduction of photoresist formulations
Author(s): Wayne M. Moreau; Kathleen M. Cornett; James T. Fahey; Leo L. Linehan; Warren Montgomery; Marina V. Plat; Randolph S. Smith; Robert L. Wood
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Photolithography process characterization and 3D simulation using track-mounted development rate monitor data
Author(s): Saraubh Dutta Chowdhury; David W. Alexander; Mark Goldman; Alan W. Kukas; Nigel R. Farrar; Clifford H. Takemoto; Bruce W. Smith; Linard Karklin
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Thick film photoresist resolution enhancement with surfactant surface treatment
Author(s): Dennis R. McKean; Thomas P. Russell; Alfred F. Renaldo
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Use of wafer curvature measurement (WCM) techniques in the determination of the process window of positive DUV resists
Author(s): Patrick Jean Paniez; Andre Schiltz
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Supercritical fluid processing: a new dry technique for photoresist developing
Author(s): Paula M. Gallagher-Wetmore; Gregory M. Wallraff; Robert D. Allen
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All-dry resist processes for 193-nm lithography
Author(s): Mark W. Horn; Brian E. Maxwell; Roderick R. Kunz; Michael S. Hibbs; Lynn M. Eriksen; Susan C. Palmateer; Anthony R. Forte
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Aminodisilanes as silylating agents for dry-developed positive-tone resists for deep-ultraviolet (248-nm) and extreme ultraviolet (13.5-nm) microlithography
Author(s): David R. Wheeler; Richard S. Hutton; Craig H. Boyce; Susan M. Stein; Raymond A. Cirelli; Gary N. Taylor
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Chemically amplified resist convertible into inorganic silicate glass (GPR)
Author(s): Miwa Sakata; Maki Kosuge; Hideyuki Jinbo; Toshio Ito
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t-Boc protected poly(p-hydroxystyrene-alt-carbon monoxide): a new class of deep-UV resists
Author(s): M. S. Brookhart; Joseph M. DeSimone; Robert E. Johnson; Shonali Tahiliani
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Novel inorganic photoinitiators
Author(s): Charles Kutal; Bentley J. Palmer; Zhikai Wang
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Process optimization of a positive-tone chemically amplified resist for 0.25-um lithography using a vector scan e-beam tool
Author(s): Ahmad D. Katnani; Dominic Schepis; Ranee W. Kwong; Wu-Song Huang; Zoilo C. H. Tan; Charles A. Sauer
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Reaction diffusion kinetics in deep-UV positive-tone resist systems
Author(s): Marco Antonio Zuniga; Gregory M. Wallraff; Andrew R. Neureuther
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Quantitative analysis of chemically amplified negative photoresist using mirror-backed infrared reflection absorption spectroscopy
Author(s): Chris J. Gamsky; Paul M. Dentinger; Glenn R. Howes; James Welch Taylor
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Characterization and modeling of a positive-acting chemically amplified resist
Author(s): John S. Petersen; Chris A. Mack; James W. Thackeray; Roger F. Sinta; Theodore H. Fedynyshyn; J. Michael Mori; Jeff D. Byers; Daniel A. Miller
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Nonconstant diffusion coefficients: short description of modeling and comparison to experimental results
Author(s): John S. Petersen; Chris A. Mack; John L. Sturtevant; Jeff D. Byers; Daniel A. Miller
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UV pretreatments for improved etching of organic antireflective coating (ARC) layer
Author(s): Linda J. Insalaco; Vandana N. Krishnamurthy; John L. Sturtevant; James C. Mitchener
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Characterization of profile dependency on nitride substrate thickness for a chemically amplified I-line negative resist
Author(s): Erik A. Puttlitz; James P. Collins; Thomas M. Glynn; Leo L. Linehan
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Improved resist profiles and CD control through optimized thin dielectric stacks
Author(s): Christopher F. Lyons; Mahesh Agrawal; Bhanwar Singh
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Effect of reducing the contaminant concentration when patterning a chemically amplified positive resist
Author(s): Akira Oikawa; Yasunori Hatakenaka; Yumiko Ikeda; Yoko Kokubo; Motoko Tanishima; Nobuaki Santoh; Naomichi Abe
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Mechanism of amine additive in chemically amplified resist visualized by using Monte Carlo simulation
Author(s): Tohru Ushirogouchi; Koji Asakawa; Makoto Nakase; Akinori Hongu
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Direct evaluation of airborne contamination in chemically amplified resist films
Author(s): Yoshio Yamashita; Takao Taguchi; Takeo Watanabe
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Contamination control for processing DUV chemically amplified photoresists
Author(s): Joseph C. Vigil; Mark William Barrick; Tim H. Grafe
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Molecular simulation of photoresists I: basic techniques for molecular simulation
Author(s): Andrew J. Blakeney; Lawrence Ferreira; Nicholas M. Reynolds
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Molecular simulation of photoresists II: application to PAC diffusion
Author(s): Andrew J. Blakeney; Lawrence Ferreira; Medhat A. Toukhy; Patricia Morra; Nicholas M. Reynolds
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Nonlinear imaging effects using high-contrast resists
Author(s): Rodney J. Hurditch; Steven G. Hansen; John E. Ferri; David J. Brzozowy
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Thermal rearrangement of novolak resins used in microlithography
Author(s): Ricky Hardy; Anthony Zampini; Michael J. Monaghan; Michael J. O'Leary; William J. Cardin; Timothy J. Eugster
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Utilizing contrast enhancement material as a topside antireflective coating (TARC) for maximizing an i-line 0.35-um process window
Author(s): Matthew L. Moynihan; Mark S. Markowski
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Dielectric and chemical characteristics of electron-beam-cured photoresist
Author(s): Ernesto S. Sison; M. Dalil Rahman; Dana L. Durham; James Hermanowski; Matthew F. Ross; Michael J. Jennison
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Advanced photoresist for high-throughput i-line stepper applications
Author(s): Anthony Canize; Walter Spiess; Stanley A. Ficner; Ping-Hung Lu; Ralph R. Dammel; Yvette M. Perez
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Nonchemically amplified positive photoresist for synchrotron radiation x-ray lithography
Author(s): Daniel Bucca; Ari Aviram; David E. Seeger; Will Conley; William R. Brunsvold
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193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system
Author(s): Robert D. Allen; Gregory M. Wallraff; Richard A. Di Pietro; Donald C. Hofer; Roderick R. Kunz
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Characterization and modeling of a chemically amplified resist for ArF lithography
Author(s): John M. Hutchinson; Gregory M. Wallraff; William D. Hinsberg; Juliann Opitz; William G. Oldham
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Applications of plasma-polymerized methylsilane as a resist and silicon dioxide precursor for 193- and 248-nm lithography
Author(s): Timothy W. Weidman; Olivier P. Joubert; Ajey M. Joshi; Robert L. Kostelak
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Design, synthesis and characterization of poly(trimethylsilylmethyl methacrylate-co-chloromethyl styrene) for 193-nm exposure
Author(s): Bruce W. Smith; David A. Mixon; Anthony E. Novembre; Shahid A. Butt
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Plasma etch characteristics of electron-beam processed photoresist
Author(s): Matthew F. Ross; D. Comfort; Georges Gorin
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Modeling and simulation of the PRIME process using the SLITS simulator
Author(s): Declan McDonagh; Khalil I. Arshak; Arousian Arshak; Jules Braddell; Bhvanesh P. Mathur
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Vacuum photoresists on a base of phenoxazine and their lithographic properties
Author(s): Vladimir Enokovich Agabekov; Olga Evgenyevna Ignasheva; Yurii Ivanovich Gudimenko; Vladimir N. Belyatsky
Dry resist material on base of perylene tetracarboxylic acid derivatives for laser lithography
Author(s): Vladimir Enokovich Agabekov; Victor Adamovich Azarko; Olga Petrovna Nevdakh
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Development-free vapor laser photolithography with 0.4-um resolution
Author(s): Yongyuan Yang; Xiaoyin Hong; Liming Dai; Albert W.H. Mau
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Studies on the adhesion contact angle of various substrates and their photoresist profiles
Author(s): Chang-Ming Dai; Daniel Hao-Tien Lee
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Multilayer process of T-shaped transistor gates for GaAs-pseudomorphic HEMTs using e-beam resist technology and i-line negative resist with optical stepper lithography
Author(s): Joachim Schneider; Fred Becker; Karlheinz Glorer; Birgit Weismann; Norbert Muenzel
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Unique spin coat process for positive photoresists
Author(s): Dan Lyons; Bernard T. Beauchemin; Susan Garrard
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Manufacturing requirements for a single-wafer develop process
Author(s): Eric H. Bokelberg; James L. Goetz
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Effects of relative humidity variation on photoresist processing
Author(s): Eric H. Bokelberg; William Venet
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Evaluation and verification of improved edgebead removal process in CMOS production
Author(s): Lorna D.H. Christensen; M. Marchione; K. Luce
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High-aspect-ratio resist for thick-film applications
Author(s): Nancy C. LaBianca; Jeffrey D. Gelorme
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Lithographic performance of a positive photoresist for thick-film applications
Author(s): Alfred F. Renaldo; Laurie J. Lauchlan; Donald C. Hofer; William D. Hinsberg; Dennis R. McKean; Hugo A.E. Santini; C. Grant Willson
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Novel 3D resist shaping process via e-beam lithography, with application for the formation of blased planar waveguide gratings and planar lenses on GaAs
Author(s): Louis C. Poli; Christine A. Kondek; Anthony E. Novembre; George F. McLane
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High-contrast process using a positive-tone resist with antistatic coating and high-energy (100-keV) e-beam lithography for fabricating diffractive optical elements (DOE) on quartz
Author(s): Louis C. Poli; Christine A. Kondek; Barry L. Shoop; George F. McLane
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Modeling of a resist technology for sub-100-nm structuring
Author(s): Ulrich A. Jagdhold; Lothar Bauch
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New positive-tone deep-UV photoresist based on poly(4-hydroxystyrene) and an acid labile protecting group
Author(s): James T. Fahey; Will Conley; William R. Brunsvold; Dominic C. Yang; Wayne M. Moreau; George M. Jordhamo; Steve Pratt; Dale M. Crockatt; George J. Hefferon; Robert L. Wood
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Series of AZ-compatible negative photoresists
Author(s): Anya Voigt; Gabi Gruetzner; E. Sauer; S. Helm; T. Harder; Simone Fehlberg; Juergen Bendig
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Lithography and the future of Moore's law
Author(s): Gordon E. Moore
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Lithography for ULSI
Author(s): Shinji Okazaki
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SEMATECH and the national technology roadmap: needs and challenges
Author(s): Karen H. Brown
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