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PROCEEDINGS VOLUME 2397

Optoelectronic Integrated Circuit Materials, Physics, and Devices
Editor(s): Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt
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Volume Details

Volume Number: 2397
Date Published: 24 April 1995
Softcover: 77 papers (796) pages
ISBN: 9780819417442

Table of Contents
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Parallel optical interconnection for high-speed data links
Author(s): Barry F. Levine; James D. Wynn; Daryoosh Vakhshoori; K. Monteleone
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Optical, electronic, magnetic, and superconducting properties of quasiperiodic quantum dot arrays synthesized by a novel electrochemical technique
Author(s): Supriyo Bandyopadhyay; A. E. Miller; Meera Chandrasekhar
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Monolithic integration of 1.3-um InGaAs photodetectors and high-electron-mobility transistor (HEMT) electronic circuits on GaAs
Author(s): Thomas Fink; Volker Hurm; Brian Raynor; Klaus Koehler; Willy Benz; M. Ludwig
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E-beam-pumped semiconductor lasers
Author(s): Robert R. Rice; James F. Shanley; Neil F. Ruggieri
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High-power flared semiconductor laser amplifiers
Author(s): Mario Dagenais; Si Hyung Cho; Ping-Hui S. Yeh; Stephen H. Fox; R. Prakasam; Peter J.S. Heim; Scott A. Merritt; C.-C. Lu; Vijayanand Vusirikala; Badri Prasad Gopalan; Suryaprasad Kareenahalli; Colin E. C. Wood
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Dynamics of ridge-guide strained-layer multiple quantum well 1.3- and 1.55-um semiconductor lasers
Author(s): Gary A. Evans; Jay B. Kirk; Jieh-Ping Sih; T. S. Chou; Jerome K. Butler; Richard K. DeFreez; A. R. Mantie; K. Ouyang; A. D. Ceruzzi
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Novel accurate measurement technique for carrier lifetime in 1.5-um semiconductor laser
Author(s): Marina Meliga; Roberto Paoletti; Marco Bello; Luca Cicchelli; Ivo Montrosset
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AlGaInP/GaInP visible laser diodes with extremely high characteristic temperature To
Author(s): Alexander A. Chelny; Vladimir Alekseevic Gorbylev; Alexander Aluev; Petr Georgievich Eliseev; Vadim Pavlovich Konyaev; Michail Viktorovic Zverkov; Victor Ivanovich Krichevsky; Alexander Yakovlevic Polyakov
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Femtosecond dynamics studies of coherent phonon generation
Author(s): Mildred S. Dresselhaus; H. J. Zeiger; J. Vidal; T. K. Cheng; Erich P. Ippen; George Dresselhaus
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Characterization of semiconductor device structures using contactless electromodulation
Author(s): Fred H. Pollak; Wojciech Krystek; M. Leibovitch; S. Moneger; Hao Qiang; Dong Yan
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Spin tracing: a tool of interface characterization in structures with semimagnetic semiconductors
Author(s): Jan A. Gaj; P. Kossacki; Nguyen The Khoi; J. Cibert; W. Grieshaber; Y. Merle d'Aubigne; Greg Karczewski; J. Kossut; T. Wojtowicz
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Optical characterization and dimension determination of polyaniline films
Author(s): Dang Mo; Yongyao Lin; Hui Z. Wang; Zhaoxian Yu
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Use of scanning probe microscopies to study transport in semiconductor heterostructures
Author(s): Venkatesh Narayanamurti
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Calculation of third-order optical susceptibilities due to excitonic nonlinearities in rectangular GaAs/AlGaAs quantum well wires with finite Al-graded band offsets included
Author(s): Frank L. Madarasz; Frank Szmulowicz; Frank Kenneth Hopkins
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Modulated photoellipsometry measurements of GaAs internal field
Author(s): Regis Vanderhaghen; S. Cueille; Bernard Drevillon; Razvigor Ossikovski
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Photoreflectance spectroscopy of metalorganic chemical vapor deposition (MOCVD)-grown GaAs and GaAs/GaAlAs structures
Author(s): Jan Misiewicz; Krzysztof Jezierski; P. Sitarck; P. Markiewicz; Ryszard Korbutowicz; Marek Panek; Beata Sciana; Marek J. Tlaczala
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Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction
Author(s): Maya P. Mikhailova; Georgy G. Zegrya; Konstantin D. Moiseev; Ivan N. Timchenko; Igor A. Andreev; Yury P. Yakovlev
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Technology for infrared sensors produced in low volume
Author(s): Raymond S. Balcerak
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Improved performance of IR photodetectors with 3D gap engineering
Author(s): Jozef Piotrowski; Manijeh Razeghi
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Quantum well and superlattice heterostructures for space-based long-wavelength infrared photodetectors
Author(s): Anjali Singh; M. Omar Manasreh
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Ultraviolet detectors for astrophysics: present and future
Author(s): Melville P. Ulmer; Manijeh Razeghi; Erwan Bigan
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Optical effect in small geometry devices
Author(s): B. B. Pal; R. K. Sahoo
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High-brightness laser diode arrays
Author(s): Charlie Ward Trussell; Vernon King; Leslie R. Condiff
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Fabrication of dense optoelectronic device arrays
Author(s): Mark B. Spitzer; Shambhu K. Shastry; Robert W. McClelland
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High-detection resolution presented by large-area thin-film position-sensitive detectors
Author(s): Elvira Fortunato; Guilherme Lavareda; Rodrigo Martins; Fernando Soares; Luis Fernandes
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Damage-free indium-tin-oxide contacts to indium-phosphide-based devices
Author(s): Alain Azema; Corinne Coutal; Jean-Claude Roustan; Stephen Taylor; Andre Leycuras
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Semiconductors of the future, and the future is now!
Author(s): Max N. Yoder
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Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices
Author(s): Mohamed Asif Khan; Q. Chen; C. J. Sun; Michael S. Shur; M. F. MacMillan; Robert P. Devaty; W. J. Choyke
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Optoelectronic GaN-based field effect transistors
Author(s): Michael S. Shur; Mohamed Asif Khan
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Nonlinear optical properties of metal-nitride thin films
Author(s): Paul M. Lundquist; Weiping Lin; John B. Ketterson; George K. Wong; Long D. Zhu; Peter E. Norris
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Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates
Author(s): Patrick Kung; Xiaolong Zhang; Erwan Bigan; Manijeh Razeghi; Adam W. Saxler
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III-V semiconductors for midinfrared lasers: progress and future trends
Author(s): Michael W. Prairie
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Aluminum-free 980-nm laser diodes for Er-doped optical fiber amplifiers
Author(s): Markus Pessa; Jari T. Nappi; Alexander Ovtchinnikov; Pekka Savolainen; Harry M. Asonen
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Overview of OMVPE optoelectronic material growth at the Jet Propulsion Laboratory
Author(s): James Singletery
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Bulk poling of lithium niobate for frequency conversion applications
Author(s): William K. Bischel; Simon J. Field; Douglas J. Bamford; Mark J. Dyer; David A. Deacon
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Ultrafast hole tunneling in asymmetric double quantum wells
Author(s): Mark F. Krol; Sergey Yu. Ten; Brian P. McGinnis; Michael J. Hayduk; Galina Khitrova; Nasser Peyghambarian
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Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si
Author(s): Erick J. Michel; R. Peters; Steven Slivken; Christopher Louis Jelen; P. Bove; Jianren Xu; Ian T. Ferguson; Manijeh Razeghi
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High-speed and high-power field effect transistors as drivers of optical modulation systems: physical limitations, state of the art, and trends
Author(s): Georges Salmer
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New concepts of optoelectronic integrated circuits for microwave applications: MOMICs
Author(s): Didier J. Decoster
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Er-doped sol-gel glasses for integrated optics
Author(s): C.-Y. Li; J. Ingenhoff; S. Iraj Najafi; J. E. Chisham; M. MacLachlan; Mark P. Andrews; Yu-Hua Kao; John D. Mackenzie; Tomoko Ohtsuki; Nasser Peyghambarian
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Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors
Author(s): Scott A. Barnett; Joanna Mirecki-Millunchick; Jose Gregorio Labanda; Ron Kaspi; L. Hultman
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Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers
Author(s): James R. Hoff; Erwan Bigan; Gail J. Brown; Manijeh Razeghi
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Variation of threshold current with well-barrier hole-burning effect in quantum well lasers
Author(s): Hussain Arbab Tafti; Fatima N. Farokhrooz; K. K. Kamath; P. R. Vaya
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Lasers based on intersubband transitions in quantum wells
Author(s): Ali A. Afzali-Kushaa; George I. Haddad
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Er-doped Si/SiO2 microcavities
Author(s): E. Fred Schubert; J. M. Poate
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Semiconductor microcavity light-emitting structures
Author(s): Igor Vurgaftman; Jasprit Singh
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Design, fabrication, and modeling of high-speed metal-semiconductor-metal (MSM) photodetectors with indium-tin-oxide (ITO) and Ti/Pt/Au contacts
Author(s): Christian Beaulieu; Francois L. Gouin; Julian P. Noad; William Hartman; Ewa Lisicka-Skrzek; Karen A. Vineberg; Ezio Berolo
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High-power coherent sources based on antiguided structures
Author(s): Luke J. Mawst; Dan Botez
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New solid state photomultiplier
Author(s): Dmitry A. Shushakov; Vitaly E. Shubin
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Application of synchrotron radiation to semiconductor surfaces, interfaces, and heterostructures
Author(s): Massimo Altarelli
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Metalorganic chemical vapor deposition (MOCVD) and atomic force microscopy (AFM) study of high-quality Bi-2223 superconducting thin films
Author(s): Kazuhiro Endo
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Accurate determination of surface coverage in migration-enhanced epitaxy of compound semiconductors
Author(s): J. K. Furdyna; H. Luo; Steven W. Short; S. H. Xin
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Defects and interfaces in low-temperature grown Ge/Si heterostructures
Author(s): Serge Oktyabrsky; Jagdish Narayan
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Electron transmission through ultrathin metal layers and its spin dependence for magnetic structures
Author(s): Henri-Jean Drouhin; G. Lampel; Y. Lassailly; A. J. van der Sluijs; C. Marliere
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Ferroelectric oxide thin films for photonic applications
Author(s): Bruce W. Wessels
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Constraints imposed by the data on a successful theory of high-temperature superconductivity
Author(s): Howard A. Blackstead; John D. Dow
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Optical and electrical properties of doped poly-3-octylthiophene films
Author(s): Russell L. Lidberg; Kisholoy Goswami; Marvin R Lovato; Ramasubraman Venkatasubramanian; William H. Engelmann
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Thermal population from hole mixing tunneling in asymmetric coupled double wells
Author(s): Changping Luo; Zhong Ying Xu; De Sheng Jiang; Jizong Xu; Baozhen Zheng; Penghua Zhang; Xiaoping Yang
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Test structures for modeling and fabrication of Fabry-Perot-type GaAs/AlGaAs waveguide modulators
Author(s): Sergiusz Z. Patela; Robert A. Lowkis; Regina Paszkiewicz; Bogdan Paszkiewicz; Marek J. Tlaczala; Jacek M. Radojewski; Anna Sankowska
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Liquid phase epitaxy (LPE) of GaAs from the Ga-Bi solutions
Author(s): Marek Panek; Regina Paszkiewicz; Marek J. Tlaczala; Bogdan Paszkiewicz; Janusz Kozlowski; Sergey Novikov; V. V. Tshaldyshev
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Coupling structures for active and passive integrated optoelectronic components and circuits on silicon
Author(s): Dieter Zurhelle; Jan Peter Schmidt; Rainer Hoffmann; Dietmar Sander; Joerg Mueller
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ZnSe/GaAs(100) thin layers, ZnS-ZnSe-ZnS/GaAs(100) single quantum well structures and ZnS/ZnSe/GaAs(100) superlattices grown by photoassisted VPE
Author(s): Alexander Vladimirov Kovalenko; V. V. Tishchenko
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Hydrogenated amorphous silicon speed sensor based on the flying spot technique
Author(s): Manuela Vieira; Alessandro Fantoni; A. Felipe Macarico; Fernando Soares; Rodrigo Martins
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Spatial microscopic/macroscopic control and modeling of the p.i.n devices stability
Author(s): Alessandro Fantoni; Manuela Vieira; Rodrigo Martins
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Light-induced effects on low-frequency drain conductance and transconductance in GaAs MESFETs
Author(s): Boguslaw Boratynski; Bogdan Paszkiewicz; Iwona Zborowska-Lindert; Miroslaw Szreter
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Stark effect in type II heterostructure: application to electro-optical modulator
Author(s): C. Lugand; Taha Benyattou; Gerard Guillot
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Photoreflectance measurement of internal piezoelectric fields in strained In0.2Ga0.8As/GaAs structures grown on polar substrates
Author(s): Catherine Bru; P. D. Berger; Y. Baltagi; Taha Benyattou; Gerard Guillot; Xavier Marcadet; Julien Nagle
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Investigations of vertical cavity surface emitting lasers (VCSEL) resonant cavities by photoreflectance spectroscopy
Author(s): P. D. Berger; Catherine Bru; Taha Benyattou; Andre L. Chenevas-Paule; Philippe Grosse
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Use of nitrogen as a carrier gas in LP-metalorganic chemical vapor deposition (MOCVD) for growth of GaAs AlGaAs and quantum well infrared photodetectors heterostructures
Author(s): Igor Dmitrievich Zalevsky; Alexander A. Chelny; Vladimir Alekseevic Gorbylev; Grachik H. Avetisyan; Vladimir B. Kulikov
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Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors
Author(s): Rodrigo Martins; Elvira Fortunato
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Modeling of an optically controlled FET
Author(s): V. K. Singh; B. P. Singh
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Natural absorption energetics of the crystal semiconductors
Author(s): Nadezhda Pavlovna Netesova
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Dark current characteristics and background-limited (BLIP) performance of AlGaAs/GaAs quantum well detectors
Author(s): Jan Y. Andersson; Lennart Lundqvist; Jan Borglind
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New capabilities of GaAs detectors for UV applications
Author(s): Monique T. Constant; Dorothee T. Loridant; J. C. Camart; S. Meziere; Luc Boussekey; M. Chive
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Photo- and electro-luminescence studies of uncooled arsenic-rich In(As,Sb) strained layer superlattice light-emitting diodes for the 4-12-um band
Author(s): Patrick J.P. Tang; Mark J. Pullin; S. J. Chung; Christopher C. Phillips; R. A. Stradling; A. G. Norman; Y. B. Li; L. Hart
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Investigation of 0.8-um InGaAsP-GaAs laser diodes with multiple quantum wells
Author(s): Jacqueline E. Diaz; Hyuk Jong Yi; Seongsin Kim; Matthew Erdtmann; Lewis S. Wang; Ivan Eliashevich; Erwan Bigan; Manijeh Razeghi
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Modeling of normal incidence absorption in p-type GaAs/AlGaAs quantum well infrared detectors
Author(s): Gail J. Brown; Frank Szmulowicz
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