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PROCEEDINGS VOLUME 2195

Advances in Resist Technology and Processing XI
Editor(s): Omkaram Nalamasu
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Volume Details

Volume Number: 2195
Date Published: 16 May 1994
Softcover: 75 papers (894) pages
ISBN: 9780819414908

Table of Contents
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Robust and environmentally stable deep UV positive resist: optimization of SUCCESS ST2
Author(s): Reinhold Schwalm; H. Binder; Thomas Fischer; Dirk J. H. Funhoff; Anne-Marie Goethals; Andreas Grassmann; Holger Moritz; Patrick Jean Paniez; Marijan E. Reuhman-Huisken; Francoise Vinet; Han J. Dijkstra; A. Krause
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Origin of delay times in chemically amplified positive DUV resists
Author(s): Patrick Jean Paniez; Charles Rosilio; B. Mouanda; Francoise Vinet
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Environmentally stable chemically amplified DUV resist based on diazoketone chemistry
Author(s): Premlatha Jagannathan; Wu-Song Huang; Ahmad D. Katnani; George J. Hefferon; Robert L. Wood
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Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist
Author(s): Wu-Song Huang; Ranee W. Kwong; Ahmad D. Katnani; Mahmoud Khojasteh
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Advanced positive photoresists for practical deep-UV lithography
Author(s): Norbert Muenzel; Heinz E. Holzwarth; Pasquale A. Falcigno; Hans-Thomas Schacht; Reinhard Schulz; Omkaram Nalamasu; Allen G. Timko; Elsa Reichmanis; Janet M. Kometani; Douglas R. Stone; Thomas X. Neenan; Edwin A. Chandross; Sydney G. Slater; M. D. Frey; Andrew J. Blakeney
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Structure-property relationship in acetal-based chemically amplified three-component DUV resist
Author(s): Munirathna Padmanaban; Yoshiaki Kinoshita; Takanori Kudo; Thomas J. Lynch; Seiya Masuda; Yuko Nozaki; Hiroshi Okazaki; Georg Pawlowski; Klaus Juergen Przybilla; Horst Roeschert; Walter Spiess; Natusmi Suehiro; Horst Wengenroth
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Effects of deprotected species on chemically amplified resist systems
Author(s): Toshiyuki Ota; Yoji Ikezaki; Toru Kajita; Eiichi Kobayashi; Akira Tsuji
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Relationship between physical properties and lithographic behavior in a high-resolution positive tone deep-UV resist
Author(s): Ulrich P. Schaedeli; Norbert Muenzel; Heinz E. Holzwarth; Sydney G. Slater; Omkaram Nalamasu
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Structural design of acid-decomposable dissolution inhibitors for a 3-components positive CA resist
Author(s): Toshiaki Aoai; Tsukasa Yamanaka; Tadayoshi Kokubo
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Dissolution characteristics optimization for chemically amplified positive resist
Author(s): Toshiro Itani; Haruo Iwasaki; Masashi Fujimoto; Kunihiko Kasama
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Synthesis, characterization, and lithography of alpha-substituted 2-nitrobenzyl arylsulfonate photo-acid generators with improved resistance to post exposure bake
Author(s): Francis M. Houlihan; Evelyn Chin; Omkaram Nalamasu; Janet M. Kometani; Thomas X. Neenan; A. Pangborne
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Effect of resin molecular weight on the resolution of DUV negative photoresists
Author(s): James W. Thackeray; George W. Orsula; Mark Denison
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Acid size effect of chemically amplified negative resist on lithographic performance
Author(s): Haruo Iwasaki; Toshiro Itani; Masashi Fujimoto; Kunihiko Kasama
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Negative resists for i-line lithography utilizing acid-catalyzed intramolecular dehydration reaction
Author(s): Takumi Ueno; Shou-ichi Uchino; Keiko T. Hattori; Toshihiko Onozuka; Seiichiro Shirai; Noboru Moriuchi; Michiaki Hashimoto; S. Koibuchi
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Photogenerated acid-catalyzed formation of phosphonic/phosphoric acids by deprotection of esters
Author(s): Marcia L. Schilling; Howard Edan Katz; Francis M. Houlihan; Janet M. Kometani; Susan M. Stein; Omkaram Nalamasu
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Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist
Author(s): Kaichiro Nakano; Katsumi Maeda; Shigeyuki Iwasa; Jun-ichi Yano; Yukio Ogura; Etsuo Hasegawa
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Quantum chemical studies of chemically amplified resist materials for electron-beam and ArF excimer laser
Author(s): Tohru Ushirogouchi; Naoko Kihara; Satoshi Saito; Takuya Naito; Koji Asakawa; Tsukasa Tada; Makoto Nakase
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Investigation of onium salt type photoacid generators in positive DUV resist systems
Author(s): Michael Francis Cronin; Timothy G. Adams; Theodore H. Fedynyshyn; Jacque H. Georger; J. Michael Mori; Roger F. Sinta; James W. Thackeray
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Properties and performance of near-UV reflectivity control layers (RCL)
Author(s): Thomas J. Lynch; Valerie R. Paradis; Mark A. Spak; Wayne M. Moreau
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Process window analysis of the ARC and TAR systems for quarter-micron optical lithography
Author(s): Hiroshi Yoshino; Takeshi Ohfuji; Naoaki Aizaki
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Deep-UV resists based on methacrylamide copolymers
Author(s): Carlo Mertesdorf; Bertholt Nathal; Norbert Muenzel; Heinz E. Holzwarth; Hans-Thomas Schacht
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Comparison of the lithographic characteristics of t-BOC-based chemically amplified resist system under deep-UV and electron-beam exposures
Author(s): Regine G. Tarascon-Auriol; Anthony E. Novembre; Woon Wai Tai; Linus A. Fetter; Janet M. Kometani; Omkaram Nalamasu
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Role of process in obtaining optimum lithographic information from chemically amplified resists
Author(s): Charles R. Szmanda; Theodore H. Fedynyshyn; William E. Houck; Jonathan C. Root; Robert F. Blacksmith
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Dialkyl fumarate copolymers: new photoresist materials for deep-ultraviolet and mid-ultraviolet microlithography
Author(s): Graham D. Darling; Chun Hao Zhang; Alexander M. Vekselman
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Effect of partial deprotection on lithographic properties of t-butoxycarbonyloxystyrene-containing polymers
Author(s): David A. Mixon; M. P. Bohrer; J. C. Alonzo
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I-line negative resist (INR): a negative-tone I-line chemically amplified photoresist
Author(s): Leo L. Linehan; Gary T. Spinillo; Randolph S. Smith; Wayne M. Moreau; Barry C. McCormick; Robert L. Wood; Erik A. Puttlitz; James P. Collins; William J. Miller
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Diffusion effects in chemically amplified deep-UV resists
Author(s): Marco Antonio Zuniga; Eric Tomacruz; Andrew R. Neureuther
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Further improvements in CGR formulation and process
Author(s): William R. Brunsvold; Will Conley; Jeffrey D. Gelorme; Ronald Nunes; Ratnam Sooriyakumaran; Steven J. Holmes; John L. Sturtevant
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Photochemical amplified PMMA resists
Author(s): Vladimir N. Genkin
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Plasma polymerized organosilane network polymers: high-performance resists for positive and negative tone deep UV lithography
Author(s): Olivier P. Joubert; Ajey M. Joshi; Timothy W. Weidman; J. T.C. Lee; Gary N. Taylor
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0.25 um lithography development using positive mode top surface imaging photoresist
Author(s): Douglas C. LaTulipe; John P. Simons; David E. Seeger; Leo L. Linehan
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Characterization of the quarter-micron i-line lithography using a top surface imaging process
Author(s): Seung-Chan Moon; Hyeong-Soo Kim; Chang-Moon Lim; Tai-Kyung Won; Soo-Han Choi
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Proximity effects in dry developed lithography for sub-0.35 um application
Author(s): Anne-Marie Goethals; Ki-Ho Baik; Kurt G. Ronse; J. Vertommen; Luc Van den Hove
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Lithographic strategies for 0.35 um poly gates for random logic applications
Author(s): Maaike Op de Beeck; Veerle Van Driessche; Luc Van den Hove; Han J. Dijkstra
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Design of a bottom antireflective layer for optical lithography
Author(s): James T. Fahey; Wayne M. Moreau; Kevin M. Welsh; Steve S. Miura; Nicholas K. Eib; Gary T. Spinillo; John L. Sturtevant
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Materials evaluation of antireflective coatings for single-layer 193-nm lithography
Author(s): Roderick R. Kunz; Robert D. Allen
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Improved reflectivity control of APEX-E positive tone deep UV photoresist
Author(s): Will Conley; Ravindra Akkapeddi; James T. Fahey; George J. Hefferon; Steven J. Holmes; Gary T. Spinillo; John L. Sturtevant; Kevin M. Welsh
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Novel spacer technique by silylation: experiment and simulation
Author(s): Ulrich A. Jagdhold; Lothar Bauch; A. Wolff; Joachim J. Bauer
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Evaluation of a bilayer resist system based on a zirconium-containing polymer
Author(s): Ferdinand Rodriguez; Ashwin S. Ramachandran
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Deep ultraviolet positive resist image by dry etching (DUV PRIME): a robust process for 0.3 um contact holes
Author(s): Didier Louis; Philippe Laporte; Pascale Molle; H. Ullmann
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Diffusion enhanced silylation resist (DESIM): a simulator for the DESIRE process
Author(s): Bhvanesh P. Mathur; Khalil I. Arshak; Arousian Arshak; Declan McDonagh
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Liquid phase silylation process for 248 nm lithography using EL IR photoresist
Author(s): Guojing Zhang; Bruce W. Smith; Lynn F. Fuller
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Percolation view of novolak dissolution: 3. dissolution inhibition
Author(s): Hsiao-Yi Shih; Tung-Feng Yeh; Arnost Reiser; Ralph R. Dammel; Hans-Joachim Merrem; Georg Pawlowski
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Dissolution behavior of the chemically modified polyvinylphenol with introduced high-ortho structure
Author(s): Kenji Honda; Sydney G. Slater; Bernard T. Beauchemin; Medhat A. Toukhy; Sobhy P. Tadros; Toshiaki Aoai; Yasumasa Kawabe
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Lithographic performance of isomeric hydroxystyrene polymers
Author(s): Ralph R. Dammel; M. Dalil Rahman; Ping-Hung Lu; Anthony Canize; Varadaraj Elango
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Highly regioselective PACs for i-line resist design: synthetic reaction model, dissolution kinetics and lithographic response
Author(s): Ashish Pandya; Peter Trefonas; Anthony Zampini; Pamela Turci
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Characterization of the development of DNO/novolac resists by surface energy measurements
Author(s): Emilienne Fadda; Gilles R. Amblard; Andre P. Weill; Alain Prola
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Modeling of solvent evaporation effects for hot plate baking of photoresist
Author(s): Chris A. Mack; David P. DeWitt; Benjamin K. Tsai; Gil Yetter
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Role of residual casting solvent in dissolution behavior of poly (3-methyl-4-hydroxystyrene) films
Author(s): Veena Rao; William D. Hinsberg; Curtis W. Frank; Roger Fabian W. Pease
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Influence of retained and absorbed solvent on novolak and resist film dissolution and thermal behavior
Author(s): Bernard T. Beauchemin; Charles E. Ebersole; Ivan S. Daraktchiev
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Reliability of photospeed and related measures of resist performances
Author(s): Karin R. Schlicht; Patricia Scialdone; Peggy M. Spragg; Steven G. Hansen; Rodney J. Hurditch; Medhat A. Toukhy; David J. Brzozowy
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Influence of post exposure bake on resist contrast
Author(s): Medhat A. Toukhy; Steven G. Hansen
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I-line negative resist manufacturing process qualification
Author(s): Erik A. Puttlitz; James P. Collins
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Novolak-polyhydroxystyrene copolymer and photoresist compositions
Author(s): M. Dalil Rahman; Ping-Hung Lu; Mohammad A. Khadim; Elaine Kokinda; Daniel P. Aubin
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Interaction of novolak oligomers with hydrogen bond acceptors
Author(s): Tung-Feng Yeh; Jian Ping Huang; Arnost Reiser; Kenji Honda; Bernard T. Beauchemin; Rodney J. Hurditch
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Molecular bases for the interaction between novolaks and diazonaphthoquinone photoactive compounds
Author(s): Marie Borzo; Joseph J. Rafalko; Ralph R. Dammel
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Rearrangement of novolak resins
Author(s): M. Dalil Rahman; Ralph R. Dammel; Dana L. Durham
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Identification of diazonaphthoquinone esters of polyhydroxybenzophenone compounds
Author(s): John DiCarlo; O. B. Evans; J. Fedyk; Stanley A. Ficner; Mohammad A. Khadim; Ralph R. Dammel
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Dissolution inhibition of phenolic polymers: does a simple percolation field scaling law suffice?
Author(s): Peter Trefonas; Gerald Vizvary; Jonathan C. Root; Catherine C. Meister; Charles R. Szmanda
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Comparison of photoresist shelf life in PGMEA and CA solvent systems
Author(s): William C. Nelson
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Investigation of the properties of thick photoresist films
Author(s): Gary E. Flores; Warren W. Flack; Elizabeth Tai
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Correlation between the sensitivity and the contrast of polymer resists for developing in good and bad solvents
Author(s): Vladimir N. Genkin; M. Yu. Myl'nikov
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Microlithography of pi-conjugated polymers
Author(s): Mohammad S. A. Abdou; Z. W. Xie; J. Lowe; Steven Holdcroft
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Photoresist thermal stability measurements using laser scatterometry
Author(s): Robert A. Norwood; Douglas P. Holcomb; Chet J. Sobodacha; Thomas J. Lynch
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Microlithographic wet chemical processing in a capillary space
Author(s): Russell Morgan
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Photochemical curing of epoxies in the liquid-crystalline state
Author(s): Veronika Strehmel; Bernd Strehmel; Jorg Trempler
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Characterization of photochemical cured acrylates with calorimetric methods
Author(s): Bernd Strehmel; Dirk Anwand; Henrik Wetzel
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High-accuracy resist development process with wide margins by quick removal of reaction products
Author(s): Hisayuki Shimada; Toshiyuki Iwamoto; Shigeki Shimomura; Masanobu Onodera; Tadahiro Ohmi
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Novel synthetic aqueous photoresist for CCD micro color filter
Author(s): Koji Shimomura; Tomoko Otagaki; Yoko Tamagawa; Michiyo Kobayashi; Hiromitsu Aoki; Yoshikazu Sano; Sumio Terakawa
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Chemical analysis of electron beam curing of positive photoresist
Author(s): Matthew F. Ross; Lorna D.H. Christensen; John Magvas
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Synthesis and patterning of 2-10 nanometer pinhole-free organic films
Author(s): Sucheta Gorwadkar; G. K. Vinogradov; K. Senda; Ryoichi Inanami; C. Shao; Shinzo Morita
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High-contrast deep-submicron e-beam lithography process for fabricating planar waveguide optical gratings on GaAs
Author(s): Louis C. Poli; Christine A. Kondek
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Process tube characterization method for photoresist and process comparison
Author(s): George P. Mirth; Joseph C. Pellegrini
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Research on ultrahigh resolution of inorganic photoresist film
Author(s): Changtai Yu; Fengzhen Guo; Hua Yu; Zhougfu Qi; Xiangdong Yu; Yongkuan Liu; Peng Li; Zhongyi Zhang
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Evaluation results for the positive deep UV resist AZ DX 46
Author(s): Walter Spiess; Thomas J. Lynch; Charles Le Cornec; Gary C. Escher; Yoshiaki Kinoshita; John Kochan; Takanori Kudo; Seiya Masuda; Thierry Mourier; Yuko Nozaki; Setha G. Olson; Hiroshi Okazaki; Munirathna Padmanaban; Georg Pawlowski; Klaus Juergen Przybilla; Horst Roeschert; Natusmi Suehiro; Francoise Vinet; Horst Wengenroth
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