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Proceedings of SPIE Volume 2139

Quantum Well and Superlattice Physics V
Editor(s): Gottfried H. Doehler; Emil S. Koteles
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Volume Details

Volume Number: 2139
Date Published: 11 May 1994
Softcover: 37 papers (384) pages
ISBN: 9780819414342

Table of Contents
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Observation of the Mahan exciton using electroreflectance spectroscopy of a quantum well structure
Author(s): Rudiger Goldhahn; Gerhard Gobsch; S. Shokhovets; J. Martyn Chamberlain; Tin S. Cheng; Mohamed Henini
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Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures
Author(s): Hao Qiang; Fred H. Pollak; Ying-Sheng Huang; W. S. Chi; R. Droopad; David L. Mathine; George N. Maracas
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Photoluminescence linewidth broadening due to bound exciton interaction
Author(s): Vivek Srinivas; Ming Te Lin; Yung Jui Chen; Colin E. C. Wood
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Normal-incidence intersubband hole absorption in In0.5Ga0.5As/Al0.45Ga0.55As quantum wells
Author(s): Bartev J. Vartanian; James S. Harris
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Study of the mechanism of the heavy- and light-hole mixing in GaAs/AlAs superlattices by the exciton magnetoluminescence
Author(s): G. E. Pikus; F. G. Pikus
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Magnetoluminescence and Raman study of GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barrier layers
Author(s): Mitra B. Dutta; Jagadeesh Pamulapati; Peter G. Newman; L. P. Fu; Thomas Schmiedel; S. T. Lee; W. Y. Yu; Athos P. Petrou
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Effect of AlAs mole fraction on the integrated luminescence intensity of GaAs/AlxGa1-xAs quantum well heterostructures
Author(s): Elias Towe; Docai C. Sun; R. H. Henderson
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Exciton dynamics in GaAs/GaAlAs, InGaAs/GaAs, and InGaAs/AlGaAs quantum wells
Author(s): Zhong Ying Xu; Changping Luo; Shi Rong Jin; Z. L. Yuan; Jizong Xu; Baozhen Zheng
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Quantum well intermixing for optoelectronic integration
Author(s): John H. Marsh; A. Catrina Bryce
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Optical modulation and bistability using bulk Franz-Keldysh effect in GaAlAs-GaAsAg asymmetric Fabry-Perot device structures
Author(s): Parviz P. Tayebati; Badri N. Gomatam; Linas Jauniskis
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Measurement and simulation of photoluminescence spectra from vertical-cavity quantum-well laser structures
Author(s): David T. Schaafsma; Robert K. Hickernell; David H. Christensen
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Quantum well structures with almost-degenerate valence bands
Author(s): Emil S. Koteles; Farid Agahi; Kei May Lau; Arvind Baliga; Neal G. Anderson
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Demonstration of extremely low switching energies using new n-i-p-i-based smart pixels
Author(s): Michael Kneissl; Peter Kiesel; Peter Riel; K. Reingruber; Karlheinz H. Gulden; Stefan U. Dankowski; Erik Greger; A. Hoefler; Bernhard Knuepfer; Gottfried H. Doehler; X. X. Wu; John Stephen Smith
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Enhanced quantum well intermixing using multiple ion implantation
Author(s): Philip J. Poole; Paul Garrett Piva; Margaret Buchanan; Garth Champion; Ian M. Templeton; Geof C. Aers; Robin L. Williams; Alain P. Roth; Zbigniew R. Wasilewski; Emil S. Koteles; N. Sylvain Charbonneau; Jacques Beauvais
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Performance of multiple quantum well edge-emitting LED
Author(s): Yasumasa Kashima; Akio Matoba; Hiroshi Takano; Hitoshi Kanie; Tazio Irie
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InGaAs strained-layer single-quantum-well lasers' spontaneous emission spectra and their features
Author(s): E. V. Arjanov; Olga V. Danilina; Vadim Pavlovich Konyaev; Alexander S. Logginov; Vasiliy I. Shveikin; Imant I. Vinogradov
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New type of dynamic quantum wells and quantum dots
Author(s): Igor E. Tralle
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Longitudinal and vertical emission laser integration with quasi-phase-matched harmonic layers
Author(s): Richard J. F. Normandin; Hongxing Dai; Siegfried Janz; F. Chatenoud; Chandana Fernando; Yves Beaulieu; Andre Delage
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Optical transitions and nonlinearities in amorphous Si/SiO2 quantum structures
Author(s): Anatoly V. Zayats; Ole Keller; Oleg V. Golonzka; Yury A. Repeyev; Evgenyi A. Vinogradov
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Second harmonic generation in p-type GaAs quantum wells
Author(s): Zhiwei Xu; Jury V. Vandyshev; Gary W. Wicks; Philippe M. Fauchet; Mike J. Shaw; Milan Jaros; Bruce A. Richman; Chris W. Rella; H. Alan Schwettman
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Free-electron laser nonlinear spectroscopy of doubly resonant (5.5-3.0um and 4.1-2.1 um)InGaAs/AlGaAs asymmetric quantum wells
Author(s): Eric L. Martinet; Gary L. Woods; Herman C. Chui; James S. Harris; Martin M. Fejer; Chris W. Rella; Bruce A. Richman
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Nonlocal study of optical second harmonic generation from a GaAs/AlGaAs quantum well subjected to a DC electric field
Author(s): Ansheng Liu; Ole Keller
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Classically, the strangest of things, when quantum dots are quantum rings
Author(s): Andre Delage; Yan Feng; Paul J. Kelly; A. Sachrajda; R. P. Taylor
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Nonlinear characteristics of plasma in 2-D QW structures at superhigh excitation
Author(s): Vladimir G. Litovchenko; Dmytro V. Korbutyak; Yurii V. Kryuchenko
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Stimulated emission in quantum wires fabricated by cleaved edge overgrowth
Author(s): Werner Wegscheider; Loren N. Pfeiffer; Marc Dignam; A. Pinczuk; Kenneth W. West; Robert Hull
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Time-resolved studies of spatially direct and indirect transitions in GaAs/AlGaAs and InGaAs/GaAs quantum wires
Author(s): Philip J. Poole; N. Sylvain Charbonneau; Michael Fritze; Arto V. Nurmikko
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Picosecond time-resolved investigations of carrier lifetime and carrier capture in InGaAs/GaAs quantum dots
Author(s): Franz X. Daiminger; Axel Schmidt; Frank Faller; Alfred W. B. Forchel
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Lateral localization effects in strained InGaAs/GaAs semiconductor quantum wells grown on vicinal surfaces
Author(s): Jose Sanchez-Dehesa; Francisco Meseguer; R. Mayoral; Juan A. Porto; Ceferino Lopez; Jose A. Martinez-Lozano; A. Vinattieri; Marcello Colocci; A. Marti-Ceschin; Nicolas Grandjean; J. Massies
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Room-temperature photoreflectance characterization of process-induced strains in GaAs/Ga0.7Al0.3As quantum dots
Author(s): Hao Qiang; Fred H. Pollak; Yin-Sheng Tang; Peidong D. Wang; Cliva M. Sotomayor-Torres
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Mechanism of the carrier recombination in semiconductor dots
Author(s): Jim P. Zheng; HoiSing Kwok
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Bipolar charge transport in triple-barrier AlAs/GaAs resonant tunneling light-emitting diodes
Author(s): Chris A. Van Hoof; Jan Genoe; Sylvain Raymond; Gustaaf Borghs; Z. Yan; Etienne Goovaerts
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Effects of charge accumulation and biasing on resonant tunneling energies and tunneling dynamics
Author(s): David A. Cardimona; Paul M. Alsing; Anjali Singh; Vassilios Kovanis
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Regular and periodic peaks in device current, capacitance, and intersubband photocurrent from a multiple double-well structure
Author(s): Hui Chun Liu; Jianmeng Li; Margaret Buchanan; Zbigniew R. Wasilewski; J. G. Simmons
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Luminescence kinetics and lifetime of excitons in quantum wells with interface roughness
Author(s): Roland Zimmermann; E. Runge
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Light emission from ordered group-IV materials: concepts and prospects
Author(s): Martin M. Rieger; Peter Vogl; J. A. Majewski
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Absorption and emission characteristics of mesa and ridge waveguide diodes made from strain adjusted SImGEn superlattice and SI/GE quantum well layers grown by MBE
Author(s): Hartmut Presting; Thomas Zinke; Armin O. Splett; Horst Kibbel
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