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Proceedings of SPIE Volume 2021

Growth and Characterization of Materials for Infrared Detectors
Editor(s): Randolph E. Longshore; Jan W. Baars
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Volume Details

Volume Number: 2021
Date Published: 7 December 1993
Softcover: 22 papers (244) pages
ISBN: 9780819412706

Table of Contents
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Review of key trends in HgCdTe materials for IR focal plane arrays
Author(s): Carlos A. Castro
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Bulk growth of II-VI crystals in the microgravity environment of USML-1
Author(s): Donald C. Gillies; Sandor L. Lehoczky; Frank R. Szofran; David J. Larson; Ching-Hua Su; Yi-Gao Sha; Helga A. Alexander
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Advanced infrared photonic devices based on HgMnTe
Author(s): Piotr Becla
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Application of pyroelectric P(VDF/TrFE) thin films in integrated sensors and arrays
Author(s): Norbert Neumann; Reinhard Koehler
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Uniform deposition of CdTe, HgTe, and HgCdTe by ALE and MOCVD
Author(s): Nasser H. Karam; Kurt J. Linden; Hassan Ehsani; Ishwara B. Bhat
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Recent advances in the metalorganic molecular beam epitaxy of HgCdTe
Author(s): Christopher J. Summers; Brent K. Wagner; Rudolph G. Benz
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MBE-codeposited iridium silicide films on Si(100) and Si(111)
Author(s): Davis Alan Lange; Gary A. Gibson; Charles M. Falco
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Status of HgCdTe MBE technology for IRFPA
Author(s): Owen K. Wu
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1024-element linear InxGa1-xAs/InAsyP1-y detector arrays for environmental sensing from 1 um to 2.6 um
Author(s): Krishna Rao Linga; Abhay M. Joshi; Vladimir S. Ban; S. M. Mason
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Lead sulfide infrared detectors
Author(s): V. Subramanian; K. K. Janarda Pillai; K. R. Murali; N. Rangarajan
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Vapor phase epitaxy of ZnTe on silicon substrates
Author(s): Ishwara B. Bhat; Wen-Sheng Wang; Sudhir B. Trivedi; G. V. Jagannathan; Ronald G. Rosemeier; James J. Kennedy
Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications
Author(s): Hans Zogg; Alexander Fach; Clau Maissen; Jiri Masek; Stefan Blunier; K. Kessler; Peter Mueller; Carmine Paglino; Stefan I. Teodoropol; A. N. Tiwari
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Molecular beam epitaxial growth and characterization of (001) Hg1-xCdxTe-HgTe superlattices
Author(s): Charles R. Becker; V. Latussek; H. Heinke; M. M. Regnet; F. Goschenhofer; S. Einfeldt; Li He; E. Bangert; M. M. Kraus; Gottfried Landwehr
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Normal-incidence quantum-well infrared photodetectors utilizing ellipsoidal valley intersubband transitions in n-type GaSb-AlSb multiquantum wells
Author(s): Lorene A. Samoska; Berinder Brar; Herbert Kroemer
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Thickness uniformity requirements for GaAs/AlGaAs miniband transport quantum-well infrared detector wafers
Author(s): Fredrick J. Towner; S. P. Svensson; John W. Little; William A. Beck
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Quantum-well infrared detectors: photocurrent spectroscopy and volt-ampere characteristics
Author(s): Victor N. Ovsyuk; Konstantin K. Svitashev; Valerii V. Shashkin; Aleksandr I. Toropov; Nicolay T. Moshegov
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Electronic state of three-dimensional quantum wells
Author(s): Youzhou Zhao
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Characterization of impurities and defects in InSb and HgCdTe using novel magneto-optical techniques
Author(s): Chris L. Littler
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Hg1-xCdxTe electrical property changes induced by rapid thermal annealing
Author(s): Tomas R. Rodriguez; J. del Rio; Juan A. Lopez Rubio; J. Sangrador; D. van Praet
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Transient laser-induced surface deformation of Si-based multilayer structures
Author(s): Chun Chi Ma; Woei-Yun Ho; Rodger M. Walser; Michael F. Becker
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Nondestructive characterization of Hg1-xCdxTe layer structures by magneto-thermoelectric measurements
Author(s): Jan W. Baars; D. Brink
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