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Proceedings of SPIE Volume 1985

Physical Concepts and Materials for Novel Optoelectronic Device Applications II
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Volume Details

Volume Number: 1985
Date Published: 19 November 1993
Softcover: 89 papers (828) pages
ISBN: 9780819412348

Table of Contents
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Fast optical addressing using plasma gratings stabilized by deep centers in semiconductors
Author(s): N. Gouaichault-Brugel; Laurent Nardo; Michel Pugnet; Jacques H. Collet; J. L. Iehl; R. Grac
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Novel flat-panel display made of amorphous SiN:H/SiC:H thin-film LED
Author(s): Wirote Boonkosum; Dusit Kruangam; Somsak Panyakeow
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Fast semiconductor optical amplifier modulator design
Author(s): Serge Mottet; Thierry Mercier; Marc Le Ligne; Alain Le Corre; Agnese Piccirillo; Daniele Bertone; Ettore Dovio
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Picosecond signal recovery of type II tunneling bi-quantum-well etalon in all-optical gate operation
Author(s): Atsushi Tackeuchi; Tsuguo Inata; Yoshiki Nakata; Satoshi Nakamura; Yoshihiro Sugiyama; Shunichi Muto
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Fast optical recording and photonic switching at room temperature using KCl:LiFA centers
Author(s): Jari Luostarinen; Kai-Erik Peiponen; Pertti Silfsten
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Application of thin-film electroluminescent and photoconducting devices in an optoelectronic memory cell
Author(s): Zbigniew W. Porada
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Optical properties of planar and selectively grown SiGe/Si multiple quantum wells
Author(s): Detlev A. Gruetzmacher; T. O. Sedgwick; Greg A. Northrop; Adrian R. Powell; Carol Stanis
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Investigation of strain relaxation in short-period SimGen superlattices using reciprocal space mapping
Author(s): E. Koppensteiner; P. Hamberger; Guenther E. Bauer; Horst Kibbel; Hartmut Presting; Erich Kasper; Andreas Pesek
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Time-resolved fluorescence investigation of SiC epitaxy layer
Author(s): Harald Bergner; Ralf Goerlich; A. Krause
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Band offsets engineering at semiconductor heterojunctions
Author(s): M. Peressi; L. Colombo; Alfonso Baldereschi; R. Resta; Stefano Baroni
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Modification of heterojunction band offsets at III-V/IV/III-V interfaces
Author(s): G. Biasiol; L. Sorba; Gvido Bratina; R. Nicolini; Alfonso Franciosi
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In-situ structured MBE-grown crystals for applications in optoelectronics
Author(s): Karlheinz H. Gulden; Michael Kneissl; Peter Kiesel; A. Hoefler; S. Malzer; Gottfried H. Doehler; X. X. Wu; John Stephen Smith
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New class of coupled-quantum-well semiconductors with large electric field-tunable nonlinear susceptibilities in the infrared
Author(s): Carlo Sirtori; Federico Capasso; Alfred Y. Cho
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Si-SiGe and GaAl-AlAs quantum-well structures for second harmonic generation
Author(s): K. B. Wong; Mike J. Shaw; B. M. Adderley; Elizabeth A. Corbin; Milan Jaros
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Second harmonic generation in ZnTe waveguides
Author(s): Hans-Peter Wagner; H. Schmitzer; Harald Stanzl
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Very large |x(2)(2w)| in the near infrared in AlSb/GaSb-InAsSb/AlSb asymmetric quantum wells
Author(s): Sandro Scandolo; Alfonso Baldereschi; Federico Capasso
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Hot carrier model for highly nondegenerate four-wave-mixing in semiconductor laser devices
Author(s): Gian Paolo Bava; Pierluigi De Bernardis; M. Tonetti
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Optical bistability of p-i-n and n-i-p-i structures at very low optical power
Author(s): Peter Kiesel; Karlheinz H. Gulden; A. Hoefler; Michael Kneissl; Bernhard Knuepfer; Stefan U. Dankowski; Peter Riel; X. X. Wu; John Stephen Smith; Guenter Weimann; Gottfried H. Doehler
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Demonstration of low-power nonlinearity in InGaAs/InP multiple-quantum-well waveguides
Author(s): Domenico Campi; C. Cacciatore; Claudio Coriasso; Cesare F. Rigo; Heinz-Christoph Neitzert
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Nonlinear optical phenomena and lasing in semiconductor quantum dots and wires
Author(s): V. S. Dneprovskii; V. A. Karavanskii; Victor I. Klimov; D. K. Okorokov; Yu. V. Vandyshev
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Growth and characterization of ultrathin InAs/GaAs quantum wells
Author(s): Romuald Houdre; E. Tuncel; Jean Louis Staehli
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Energy shift and band offset with elastic strain in InGaSb epilayers on GaSb(100) by metalorganic chemical vapor deposition
Author(s): Yan-Kuin Su; S. M. Chen; C. F. Yu; Y. T. Lu
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Effect of defects due to lattice mismatch between GaAs and InP materials on gate-leakage current and microwave noise of GaAs MESFETS on InP substrates
Author(s): Mourad Chertouk; A. Boudiaf; Rozette Azoulay; A. Clei
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Tuning heterojunction band offsets by interface delta-doping
Author(s): Sandro Scandolo; Alfonso Baldereschi
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Influence of growth rate on the dopant confinement in delta-doped GaAs epitaxial layers grown by low-pressure metal organic vapor phase epitaxy
Author(s): G. Li; Chennupati Jagadish; Andrew Clark; C. A. Larsen; N. Hauser
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Light emission from hot carriers in polar semiconductor devices
Author(s): Paolo Lugli; Aldo Di Carlo; Peter Vogl; G. Zandler
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Hot-electron-induced light emission and impact ionization in GaAs-based devices
Author(s): Carlo Tedesco; Claudio Canali; Manfredo Manfredi; Andrea Neviani; Enrico Zanoni
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Defect characterization of GaAs/InP layers and MESFETs devices by admittance and photoluminescence spectroscopies
Author(s): A. Ben Hamida; Georges E. Bremond; M. A. Garcia Perez; Gerard Guillot; Rozette Azoulay; Mourad Chertouk; A. Clei
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Nonequilibrium charge carriers recombination, diffusion peculiarities, and bleaching in InGaAs(P) epitaxial layers
Author(s): Mindaugas Petrauskas; Saulius Juodkazis; Magnus Willander; Aziz Quacha
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Characterization of process-induced defects in 2.6-um InGaAs photodiodes
Author(s): Vladimir S. Ban; Abhay M. Joshi; Natko B. Urli
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Errors in the determination by HREM of steps at AlAs/GaAs interfaces
Author(s): Sergio I. Molina; Francisco J. Pacheco; Rafael Garcia
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Multiwavelength ellipsometry at strained Si1-xGex layers on Si substrate
Author(s): Marita Weidner; Michael Eichler; Peter Paduschek
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Scaling-law anomaly and band-structure-enhanced optical nonlinearities in semiconductor superlattices
Author(s): Milan Jaros; Mike J. Shaw
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Diacetylenes as nonlinear materials
Author(s): George Harry W. Milburn; A. R. Werninck; A. J. Shand; Jeffrey Wright
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Linear and nonlinear optics of asymmetric quantum wells
Author(s): R. Atanasov; G. F. Bassani
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Electro-optical modulation in silicon-silicon/germanium quantum-well structures
Author(s): Lionel R. Friedman; Richard A. Soref
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Excitonic bistability of GaAs/Ga0.7Al0.3As ridged waveguides
Author(s): Vittorio Pellegrini; Francesco Fuso; Ennio Arimondo
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Nonlinear optical interband transitions between electronic states in semiconductors in crossed-electric and magnetic fields
Author(s): Edmondo De Salvo; Raffaello Girlanda
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Characterization of InP/GaInAs superlattices by spectroscopic ellipsometry
Author(s): Marco Amiotti; Giorgio Guizzetti; Maddalena Patrini; Gunnar Landgren
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Spectroscopic ellipsometry characterisatiion of strained Si1-xGex multi-quantum wells for optoelectronic applications
Author(s): Christopher Pickering; Roger Timothy Carline; David J. Robbins; Weng Y. Leong; Anthony D. Pitt; Anthony G. Cullis
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Vacuum electroreflectance, electrolyte electroreflectance, and photoreflectance study of highly doped GaAs
Author(s): Silvia L. Mioc; Zhijie Zhang; James W. Garland; Paul M. Raccah
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Characterization of main electron scattering mechanisms in InGaAs/InAlAs single quantum wells by optical modulation spectroscopy
Author(s): Y. Baltagi; Catherine Bru; A. Tabata; Taha Benyattou; S. Moneger; A. Georgakilas; K. Zekentes; G. Halkias; Michel Gendry; V. Drouot; Guy R. Hollinger
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Carrier lifetimes in periodically delta-doped MQW structures
Author(s): Anders G. Larsson; Bjorn Jonsson; Ola Sjolund; Jeffrey G. Cody; Thorvald G. Andersson; S. M. Wang; Ulf Sodervall; Daniel H. Rich; Joseph L. Maserjian
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Improved photoresponse in nipi structures
Author(s): Manfred Pippan; Josef Oswald
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Dark current mechanism and the cause of the current-voltage asymmetry in quantum-well intersubband photodetectors
Author(s): Hui Chun Liu; Alan G. Steele; Zbigniew R. Wasilewski; Margaret Buchanan
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IV-VI on fluoride/Si structures for IR-sensor-array applications
Author(s): Alexander Fach; Clau Maissen; Jiri Masek; Stefan I. Teodoropol; Hans Zogg; Harald Boettner
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High-detectivity 8-12-um GaAs multi-quantum-well infrared photodetectors
Author(s): Zhenghao Chen; Junming Zhou; Defu Cai; Qiang Hu; Huibin Lu; Guozhen Yang
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Room-temperature high-sensitivity fast detector of FIR radiation
Author(s): Sergey D. Ganichev; Eugene V. Beregulin; Ilya D. Yaroshetskii
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New fast point detector of FIR laser radiation
Author(s): Sergey D. Ganichev; K. Yu. Glooch; I. N. Kotel'nikov; N. A. Mordovets; A. Ya. Shul'man; Ilya D. Yaroshetskii
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Characterization of electronic transport in amorphous silicon/crystalline silicon photodiodes
Author(s): Heinz-Christoph Neitzert
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In-situ characterization of charge-carrier kinetics in multilayers during plasma growth and etching of amorphous silicon films
Author(s): Heinz-Christoph Neitzert
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Two-dimensional photodetector with the light-controlled area of photosensitivity
Author(s): Andrei V. Kichaev; Peter G. Kasherininov; Sergey Yu. Kuzmin; Aleksey V. Klementiev; Ilya D. Yaroshetskii
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Temperature and light-induced degradation effect on a-Si:H photovoltaic PIN device properties
Author(s): Manuela Vieira; Elvira Fortunato; Carlos N. Carvalho; Guilherme Lavareda; Fernando Soares; Rodrigo Martins
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Performances presented by a position-sensitive detector based on amorphous silicon technology
Author(s): Elvira Fortunato; Manuela Vieira; Carlos N. Carvalho; Guilherme Lavareda; Rodrigo Martins; Fernando Soares; Luis Alberto Almeida Ferreira
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Porous silicon and its application for light emitting diodes
Author(s): Lorenzo Pavesi; G. Mariotto; O. Bisi; Markus Anderle; L. Calliari
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Photoluminescence of porous silicon by pulse exitation
Author(s): A. V. Andrianov; Dmitri I. Kovalev; V. B. Shuman; Ilya D. Yaroshetskii
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Lifetime of excitons in GaAs quantum wells
Author(s): Bernard Sermage; Benoit Deveaud; Martin Berz; F. Clerot; S. Long; D. Scott Katzer; Francis Mollot
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Exciton modes in quantum barriers
Author(s): F. Martelli; Mario Capizzi; Andrea Frova; A. Polimeni; Francesca Sarto; M. R. Bruni; M. G. Simeone
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Intersubband transitions of optically excited excitons in quantum wells
Author(s): Rosana Rodrigues; Ralph A. Hoepfel; Yasuaki Iimura; Takanari Yasui; Yusaburo Segawa; Yoshinobu Aoyagi; Stephen M. Goodnick
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Strained AlGaInP visible-emitting quantum-well lasers
Author(s): Huw D. Summers; Peter Blood
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Frequency tuning of a double-heterojunction AlGaAs/GaAs vertical-cavity surface-emitting laser by a serial integrated modulator diode
Author(s): Claire F. Gmachl; Anton Koeck; Matthias Rosenberger; Erich Gornik; M. Micovic; James A. Walker
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Insight into optical gain effects in InGaAs/InP multiple-quantum-well laser diodes observed by uniaxial stress
Author(s): William S. Ring; Martin O. Henry; James E. A. Whiteaway; Christopher J. Armistead
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Many body theory of strained-quantum-well laser media
Author(s): Mauro Fernandes Pereira; Stephan W. Koch; Weng W. Chow
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Novel surface-emitting GaAs/AlGaAs laser diode beam steering device based on surface mode emission
Author(s): Anton Koeck; Matthias Rosenberger; Claire F. Gmachl; Erich Gornik; C. Thanner; Lutz Korte
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Fabrication and characterization of ZnSe-based blue/green laser diodes
Author(s): Ayumu Tsujimura; Shigeo Yoshii; Shigeo Hayashi; Kazuhiro Ohkawa; Tsuneo Mitsuyu
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Quasi-stationary states and type I and type II heterojunctions in InAsSbP/InAs system
Author(s): Mikhail S. Bresler; Oleg B. Gusev; Irina N. Yassievich; Yury P. Yakovlev; Nonna V. Zotova
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Influence of ultra-thin AlAs barriers on the optical properties of GaAs/AlGaAs quantum-well structures
Author(s): Marcello Colocci; Massimo Gurioli; Jose A. Martinez-Lozano; Bruno Chastaingt; C. Deparis; Gerard Neu; J. Massies
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Near-surface quantum wells in GaAs: recovery of emission efficiency via surface passivation by hydrogen and stability effects
Author(s): Andrea Frova; V. Emiliani; Mario Capizzi; B. Bonanni; Ying-Lan Chang; YongHang Zhang; James L. Merz
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Stark ladder transition of GaAs/AlGaAs superlattices in high-energy region
Author(s): Masahito Yamaguchi; Masato Morifuji; Hitoshi Kubo; Kenji Taniguchi; Chihiro Hamaguchi; Claire F. Gmachl; Erich Gornik
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Exciton-polariton resonances in light absorption spectra of semiconductor superlattices and crystals
Author(s): Ruben P. Seisyan; Vladimir A. Kosobukin; S. A. Vaganov; G. N. Aliev; O. S. Coschug
Magneto-optical study of band parameters in the GaAs/(Al,Ga)As MQW heterosystem
Author(s): Ruben P. Seisyan; S. I. Kokhanovskii; Alexey V. Kavokin; A. I. Nesvizhskii
InGaAs/GaAs frequency tunable twin-guide quantum-well laser designed for steerable surface emission
Author(s): Matthias Rosenberger; Anton Koeck; Claire F. Gmachl; Erich Gornik; Henning Riechert; D. Bernklau
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Line-narrowing and fast modulation of AlGaAs and InGaAlP semiconductor diode lasers
Author(s): Guglielmo M. Tino; Massimo Inguscio; Francesco S. Pavone; Francesco Marin
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Carrier capture time: relevance to laser performance
Author(s): Jos E. M. Haverkort; Paul W. M. Blom; Joachim H. Wolter
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Thermal behavior of a laser diode
Author(s): Mario Bertolotti; M. Albani; Roberto Li Voti; G. L. Liakhou; Francesco Michelotti; Concita Sibilia; A. Ferrari; Alexei V. Syrbou; Vladimir P. Iacovlev
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Novel monolithic MQW modulator/co-cavity two-section optical bistable laser light source
Author(s): Qiming Wang; Feike Xiong; Wen Gao; Rong Han Wu; ShiMing Lin; Quanshen Zhang
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Optically stimulated luminescence in Gd-doped fluoroperovskites for color center lasers
Author(s): Karnati Somaiah; M. Venkata Narayana
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Fulgide-doped PMMA thin-film waveguides for optoelectronics
Author(s): Thiemo Kardinahl; Hilmar Franke
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Optical confinement in PbTe/PbEuTe multi-quantum-well structures
Author(s): Shu Yuan; G. Springholz; H. Krenn; G. Bauer; Manfred Kriechbaum
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Development of an integrated optical microphone by means of waveguide structuring on PMMA
Author(s): D. Garthe; Juergen Kobiela; Renate Kallweit
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Thin polyimide films prepared by a vacuum deposition process (VDP): morphology and properties
Author(s): Gentsho V. Danev; Erintche M. Spassova; Dimitre Z. Dimitrov; Ivo P. Doudevski
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Formation of AlGaAs/InGaAs buried-heterostructure laser diodes with high-quality lateral confinement interfaces
Author(s): Naresh Chand; Niloy K. Dutta; Sung-Nee G. Chu; Alexei V. Syrbou; Alexandru Z. Mereutza; Vladimir P. Iacovlev
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Tuning of an optical interference filter using Pancharatnam's topological phase
Author(s): H. Schmitzer; Susanne Klein; Wolfgang Dultz
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Nonlinear optical behavior of the arachidonic acid and their mixtures with other fatty acids and cholesterol in mesophase
Author(s): Mihaela A. Dumitru; Ion M. Popescu; Maria Honciuc
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Dielectrically confined excitons in natural superlattices: perovskite lead iodide semiconductors
Author(s): E. Muljarov; Sergei G. Tikhodeev; Terry Ishihara
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Mechanism of intensity modulation in ARROW waveguides
Author(s): Jacek Marek Kubica; Jerzy Gazecki; Geoffrey K. Reeves
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Studies of Rb ion-exchanged KTiOPO4 waveguides by x-ray diffraction, SIMS, electron and proton microprobe analysis and comparison with optical refractive index profiles
Author(s): Rumen Duhlev; Christopher W. Pitt; Pamela A. Thomas; A. G. James; G. W. Grime
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Determination of the optical properties of II-VI compounds by spectroscopic ellipsometry
Author(s): Jan C. Jans; J. Petruzzello; J. M. Gaines; Diego J. Olego
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Heterojunction band discontinuities measured by free-electron laser internal photoemission
Author(s): Carlo Coluzza; J. Almeida; E. Tuncel; Jean Louis Staehli; P. A. Baudat; Giorgio Margaritondo; Jim T. McKinley; Akira Ueda; Alan V. Barnes; Royal G. Albridge; Norman H. Tolk; D. Martin; Francois Morier-Genoud; C. Dupuy; Alok P. Rudra; Marc Ilegems
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