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PROCEEDINGS VOLUME 1927

Optical/Laser Microlithography
Editor(s): John D. Cuthbert
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Volume Details

Volume Number: 1927
Date Published: 8 August 1993
Softcover: 75 papers (952) pages
ISBN: 9780819411617

Table of Contents
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Comparison of various phase-shift strategies and application to 0.35-μm ASIC designs
Author(s): Kurt G. Ronse; Rik M. Jonckheere; Casper A. H. Juffermans; Luc Van den Hove
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Exposure alignment compensation method for rim phase-shifting mask fabrication
Author(s): Minoru Sugawara; Hiroichi Kawahira; Akihiro Ogura; Satoru Nozawa
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Phase-shifting mask topography effects on lithographic image quality
Author(s): Christophe Pierrat; Alfred K. K. Wong; Sheila Vaidya; Matthew Vernon
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Fabrication of 0.1-um T-shaped gates by phase-shifting optical lithography
Author(s): Hua-Yu Liu; Chung-yi Su; Nigel R. Farrar; Robert E. Gleason
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Rim phase-shift mask combined with off-axis illumination: a path to .5Λ/NA geometries
Author(s): Timothy A. Brunner
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Aerial image-based design of rim phase-shift masks with annular illumination
Author(s): David M. Newmark; Joseph G. Garofalo; Sheila Vaidya
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Application of phase-shifting mask to DRAM cell capacitor fabrication
Author(s): Emiko Sugiura; Hisashi Watanabe; Takashi Saito; Tadashi Imoriya; Yoshihiro Todokoro; Morio Inoue
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Off-axis illumination--working principles and comparison with alternating phase-shifting masks
Author(s): Burn Jeng Lin
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Optimization of the spatial properties of illumination for improved lithographic response
Author(s): Chris A. Mack
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0.35-μm lithography using off-axis illumination
Author(s): Paul Frank Luehrmann; Peter van Oorschot; Hans Jasper; Sunny Stalnaker; Steve K. Brainerd; J. Brett Rolfson; Linard Karklin
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Depth of focus and resolution enhancement of i-line and deep-UV lithography using annular illumination
Author(s): William N. Partlo; Paul Jay Tompkins; Paul G. Dewa; Paul F. Michaloski
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Quarter-micron lithography using a deep-UV stepper with modified illumination
Author(s): Anthony Yen; William N. Partlo; Shane R. Palmer; Maureen A. Hanratty; Michael C. Tipton
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Effect of lens aberration on oblique-illumination stepper system
Author(s): Pei-yang Yan; Qi-De Qian; Joseph C. Langston
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170-nm gates fabricated by phase-shift mask and top antireflector process
Author(s): Timothy A. Brunner; Pia N. Sanda; M. Wordeman; Tom Lii
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New resolution-enhancing mask for projection lithography based on in-situ off-axis illumination
Author(s): Rainer Pforr; Rik M. Jonckheere; Wolfgang Henke; Kurt G. Ronse; Patrick Jaenen; Ki-Ho Baik; Luc Van den Hove
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New mask technique for optical lithography--dummy diffraction mask
Author(s): Yong-Ho Oh; Hyung Joun Yoo; Byung-Sun Park; Zion Cha; Hyo-Joong Kim; Young Jin Jeon
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New method of tilted illumination using grating mask: advanced tilted illumination on mask
Author(s): Hoyoung Kang; Chul Hong Kim; Woo-Sung Han; Young-Bum Koh; Moon-Yong Lee
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New ring array off-axis illumination system for subhalf-micron lithography
Author(s): Haixing Zou; Qihua Yan; Yu Yan
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Stability of krypton fluoride laser in real stepper mode operation
Author(s): Masahiko Kowaka; Yukio Kobayashi; Osamu Wakabayashi; Noritoshi Ito; Junichi Fujimoto; Takanobu Ishihara; Hiroaki Nakarai; Hakaru Mizoguchi; Yoshiho Amada; Yasuhiro Nozue
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Parametric studies and the operating latitude of a spectrally narrowed KrF excimer laser for the deep-UV stepper
Author(s): Uday K. Sengupta; Toshihiko Ishihara; Richard L. Sandstrom
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Practical resolution enhancement effect by new complete antireflective layer in KrF excimer laser lithography
Author(s): Tohru Ogawa; Mitsumori Kimura; Tetsuo Gocho; Yoichi Tomo; Toshiro Tsumori
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Optimization of antireflection layers for deep-UV lithography
Author(s): Han J. Dijkstra; Casper A. H. Juffermans
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0.35-μm excimer DUV photolithography process
Author(s): Donald O. Arugu; Kent G. Green; Peter D. Nunan; Marcel Terbeek; Sue E. Crank; Lam Ta; Elliott Sean Capsuto; Satyendra S. Sethi
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I-line lithography for subhalf-micron design rules
Author(s): Barton A. Katz; Leif R. Sloan; James Foster; Richard Rogoff; Ronfu Chu; Daniel Hao-Tien Lee
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NA and Σ optimization for high-NA i-line lithography
Author(s): Koji Yamanaka; Haruo Iwasaki; Hiroshi Nozue; Kunihiko Kasama
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Optimizing NA and sigma for subhalf-micrometer lithography
Author(s): William N. Partlo; Setha G. Olson; Christopher Sparkes; James E. Connors
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Isolated-grouped linewidth bias on SVGL Micrascan
Author(s): Vasanti A. Deshpande; Karey L. Holland; Alex Hong
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Three-dimensional lithography cases for exploring technology solutions and benchmarking simulators
Author(s): John Joseph Helmsen; Andrew R. Neureuther
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Vector diffraction analysis of phase-mask imaging in photoresist films
Author(s): Donis G. Flagello; Alan E. Rosenbluth
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Three-dimensional resist profile simulation
Author(s): Masaya Komatsu
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Suitability of high-numerical-aperture i-line steppers with oblique illumination for linewidth control in 0.35-μm complex circuit patterns
Author(s): Michael K. Templeton; Eytan Barouch; Uwe Hollerbach; Steven A. Orszag
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Intensity optimization for phase-shifting masks
Author(s): Kevin D. Lucas; Andrzej J. Strojwas; K. K. Low; Chi-Min Yuan
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Extension of the Hopkins theory of partially coherent imaging to include thin-film interference effects
Author(s): Michael S. Yeung; Derek Lee; Robert S. Lee; Andrew R. Neureuther
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Experiment and simulation of sub-0.25-μm resist processes for 193-nm lithography
Author(s): Roderick R. Kunz; Mark A. Hartney; Richard W. Otten; Eytan Barouch; Uwe Hollerbach
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Computer-aided phase-shift mask design with reduced complexity
Author(s): Yong Liu; Avideh Zakhor
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Advanced lithography simulation tools for development and analysis of wide-field high numerical aperture projection optical systems
Author(s): James E. Connors; Todd Kos; Robert C. Pack; Bruce W. Smith
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Phase-contrast lithography
Author(s): Chris A. Mack
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Phase-contrast lithography
Author(s): Soichi Inoue; Tadahito Fujisawa; Satoshi Tanaka; Shuichi Tamamushi; Yoji Ogawa; Makoto Nakase
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Simulating the stitching performance of flat-panel-display steppers
Author(s): Roger C. Sumner; David S. Holbrook
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Overlay distortions in wafer-scale integration lithography
Author(s): Warren W. Flack
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Mask alignment technique using phase-shifted moire signals
Author(s): Rina Sharma; Gururaj A. Bhat; Alok K. Kanjilal; Ram Narain; M. S. Rashmi; Vijay Trimbak Chitnis; Yoshiyuki Uchida
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Subhalf-micron stepper with a reticle particle monitor
Author(s): Michio Kohno; Nobuhiro Kodachi; Kazumi Yajima; Seiya Miura
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Wide-field deep-UV wafer stepper for 0.35-μm production
Author(s): Stefan Wittekoek; Martin A. van den Brink; G. J Poppelaars; Marijan E. Reuhman-Huisken; A. Grassman; U. Boettinger
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Performance of a 0.5 NA broadband DUV step-and-scan system
Author(s): Mark William Barrick; Doug Bommarito; Karey L. Holland; Katherine C. Norris; Bob Patterson; Yumiko Takamori; Joseph C. Vigil; Timothy J. Wiltshire
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Design and analysis of a high-NA projection optical system for 0.35-μm deep-UV lithography
Author(s): Andrew V. Hill; James E. Webb; Anthony R. Phillips; James E. Connors
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Self-aligned rim-type phase-shift mask fabrication by backside exposure
Author(s): David S. O'Grady; Stan P. Bajuk; Edward T. Smith
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Phase-shift reticles for the fabrication of subhalf-micron gates in GaAs integrated circuits using optical stepper lithography
Author(s): Joachim Schneider; Fred Becker; Brian Raynor; Birgit Weismann
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Multiple shifter arrays for repairing phase defects in conjugate twin-shifter phase-shift mask
Author(s): Hiroshi Ohtsuka; Kazuyuki Kuwahara; Toshio Onodera
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Determine submicron process window volume with simulator tools
Author(s): Mircea V. Dusa; Linard Karklin; Mark Goldmann; William M. Gouin; George P. Mirth
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Chromeless phase mask by resist silylation for i-line lithography
Author(s): Lothar Bauch; Joachim J. Bauer; Monika Boettcher; Ulrich Haak; Wolfgang W. Hoeppner; Georg G. Mehliss
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Effect of duty ratio of line and space in phase-shifting lithography
Author(s): Junji Miyazaki; Atsumi Yamaguchi; Keiji Fujiwara; Nobuyuki Yoshioka; Hiroaki Morimoto; Katsuhiro Tsukamoto
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Vector aerial image with off-axis illumination
Author(s): Eytan Barouch; Daniel C. Cole; Uwe Hollerbach; Steven A. Orszag
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Chromeless phase-shift technology: the physical mechanism of the dark area produced by phase compensation and its application
Author(s): Long Que; Guoliang Sun; Boru Feng
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Advanced process with magnetically enhanced RIE for phase-shifting mask fabrication
Author(s): Satoshi Aoyama; Haruhiko Kusunose; Minoru Hanazaki; Nobuyuki Yoshioka; Yaichiro Watakabe; Atsushi Hayashi; Akihiko Isao; Yasuo Tokoro
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Use of amorphous silicon for deep-UV masks
Author(s): Charles H. Fields; William G. Oldham; Richard J. Bojko
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KrF excimer lasers for DUV-lithography
Author(s): Rainer Paetzel; Hermann Buecher; Ulrich Rebhan
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High-resolution spectral studies and the absolute-wavelength calibration of a KrF excimer laser for microlithography
Author(s): Igor V. Fomenkov; Richard L. Sandstrom
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Efficient spectral narrowing, tuning, and stabilization devices for KrF laser used in microlithography
Author(s): Alexander N. Novoselov; Victor G. Nikiforov; Alexander F. Silnitsky; Boris F. Trinchuk
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TAR processing for CD control in I-line and 248-nm lithography
Author(s): Christopher F. Lyons; Nicholas K. Eib; Marina V. Plat; Gary T. Spinillo; Kevin M. Welsh
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Photoresist striation study on the 8-inch topography wafer
Author(s): Daniel Hao-Tien Lee; Chih-Yung Lin; Gwo-Yuh Shiau
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Negative deep-UV processes for CMOS and EPROM devices: performances and limits
Author(s): Francoise Vinet; Thierry Mourier; Fabienne Baudru; Charles Le Cornec; Michel Lerme; Bernard Guillaumot; Michel Laurens
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Effect of g-line filter transmission characteristics on dose matching between monochromatic exposure tools in a production environment
Author(s): James R. Przybyla; Tim Emery; Hussein Mukaled
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Photoresist thin-film effects on alignment process capability
Author(s): Gary E. Flores; Warren W. Flack
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Process-induced wafer distortion: its measurement and effects on overlay in stepper-based advanced lithography
Author(s): Giovanni Rivera; Paolo Canestrari
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Cost/benefit analysis of mix-and-match lithography for production of half-micron devices
Author(s): John G. Maltabes; Mark C. Hakey; Alan L. Levine
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Cost analysis of lithographic characterization: an overview
Author(s): Patricia F. Mahoney; Chris A. Mack
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Improvement of the physical-optics approximation for topography simulation in optical lithography
Author(s): Michael S. Yeung; Andrew R. Neureuther
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Comparison of scalar and vector diffraction modeling for deep-UV lithography
Author(s): Bruce W. Smith; Donis G. Flagello; Joseph R. Summa; Lynn F. Fuller
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Calibration of lithography simulator by using subresolution patterns
Author(s): Shay Kaplan; Linard Karklin
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Response surface modeling of rim phase-shift masks
Author(s): Richard D. Holscher; Bruce W. Smith; Steve K. Brainerd
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Polarization effect of illumination light
Author(s): Yasuyuki Unno
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Design and development of a prototype excimer-laser-based stepper
Author(s): Dohoon Kim; Boo-Yeon Choi; Ki Ro Chung; Chi-Hoon Jun; Won-Ick Jang; Youn Tae Kim; Jong-Hyun Lee; Heung Ok Park
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Lithographic performance of a new generation i-line optical system: a comparative analysis
Author(s): Gary E. Flores; Warren W. Flack; Lynn Dwyer
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193-nm deep-UV lithography system using a line-narrowed ArF excimer laser
Author(s): Bruce W. Smith; Malcolm C. Gower; Mark Westcott; Lynn F. Fuller
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Study of excimer-laser direct-projective lithography
Author(s): Haixing Zou; Yudong Zhang
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