Share Email Print
cover

Proceedings of SPIE Volume 1802

Microelectronics Manufacturing and Reliability
Editor(s): Barbara Vasquez; Anant G. Sabnis; Kenneth P. MacWilliams; Jason C.S. Woo
Format Member Price Non-Member Price
Softcover $105.00 * $105.00 *

*Available as a photocopy reprint only. Allow two weeks reprinting time plus standard delivery time. No discounts or returns apply.


Volume Details

Volume Number: 1802
Date Published: 14 January 1993
Softcover: 25 papers (268) pages
ISBN: 9780819410009

Table of Contents
show all abstracts | hide all abstracts
Application of concept selection methodology in IC process design
Author(s): Myung-Kul Kim
Show Abstract
Implications of scaling on static RAM bit cell stability and reliability
Author(s): Mary Ann Coones; Norm Herr; Al Bormann; Kent Erington; Vince Soorholtz; John Sweeney; Michael Phillips
Show Abstract
Characterization of PECVD process-induced degradation of EEPROM reliability
Author(s): Mark D. Griswold; Frank R. Myers; Karen Ramondetta; Alex Shaw
Show Abstract
Strategy for continuous improvement in IC manufacturability, yield, and reliability
Author(s): Dean J. Dreier; Mark Berry; Phil Schani; Michael Phillips; Joe Steinberg; Gary DePinto
Show Abstract
Improving built-in product reliability through the efficient identification of nonrandom contamination events
Author(s): Carl Aspin
Show Abstract
Particle evaluation/control of the Ti/TiN barrier layer in BiCMOS processing
Author(s): Ping Wang; Bin Liu; Mike May; Mark Granum
Show Abstract
Defect reduction in the resist apply area
Author(s): John G. Costigan; Thomas M. Wolf
Show Abstract
Defect reduction on the metal sputter cassette transfer system
Author(s): Bin Liu
Show Abstract
Lifetest IC failures due to metal extrusion and migration resulting from process-induced stress relief
Author(s): Phil Schani; Horacio Mendez; Dean J. Dreier; Pat Liston; Michael Phillips; John Sweeney; Mark Franklin; Norm Herr; Brian Aubin; Paul Tuohy
Show Abstract
Example of the `upstream approach` methodology: an investigation of open-contact failures in ASIC devices
Author(s): Tam T. Le; R. R. Mitchell; Jen-Jiang J. Lee; C. E. Chen; Hoang Huy Hoang
Show Abstract
Investigation of particle-induced timing sensitivity in one-megabit DRAMs
Author(s): Ed Black; John Bridwell; R. McConnell
Show Abstract
Imaging gate oxide ruptures
Author(s): Horacio Mendez; Steve Morris; Sudhindra Tatti; Nicholas Dickson; Ronald E. Pyle
Show Abstract
Failure analysis for improved electromigration performance
Author(s): Kevin Hussey; E. Widener; Mark Fernandes; Kuan Yu Fu; Tom Guckert
Show Abstract
Wafer level reliability
Author(s): Theodore A. Dellin; William M. Miller; Donald G. Pierce; Eric S. Snyder
Show Abstract
Investigation into bake-reversible low-level ESD-induced leakage
Author(s): Nicholas Dickson; James W. Miller; Mark Jackson; Stella Kohn; Ronald E. Pyle; Sudhindra Tatti
Show Abstract
Use of the charge-induced voltage alteration technique to analyze precursors to dielectric breakdown
Author(s): Daniel L. Barton; Edward I. Cole
Show Abstract
Etching-related reverse short channel effect in buried channel P-MOSFET
Author(s): Chorng Ping Chang; K. K. Ng; W. S. Lindenberger; Taeho H. Kook; Fred N. Preuninger; Avi Kornblit
Show Abstract
Impact of statistics on hot-carrier lifetime estimates of n-channel MOSFETs
Author(s): Eric S. Snyder; Ashish Kapoor; Clint Anderson
Show Abstract
Maximization of nMOSFET hot-carrier injection stability through optimization of device and process design
Author(s): Harrison B. Haver; Shu-Wu Chiu; Thomas V. Meixner; James W. Miller
Show Abstract
Breakdown voltage of submicron MOSFETs in fully depleted SOI
Author(s): Neal Kistler; Eric Ver Ploeg; Jason C.S. Woo; James D. Plummer
Show Abstract
Effects of hot light holes in n-channel silicon-on-sapphire MOSFETs
Author(s): Emil Yu-ming Chao; Guann-pyng Li
Show Abstract
Current gain degradation of boron-doped polysilicon emitter transistors under forward current stress in a C-BiCMOS technology
Author(s): Ji Zhao; Guann-pyng Li; K. Y. Liao; Maw-Rong Chin; J. Y.-C. Sun
Show Abstract
Temperature dependence of hot-carrier lifetime due to trapped charge and interface state generation
Author(s): Miryeong Song; Kenneth P. MacWilliams; Jason C.S. Woo
Show Abstract
Hot-carrier effects in thin-film, p-channel, hydrogen-passivated polysilicon-on-insulator LDD MOSFETs
Author(s): Swapan Bhattacharya; R. Kovelamudi; S. Batra; M. Lobo; Sanjay K. Banerjee; Bich-Yen Nguyen; Phil J. Tobin
Show Abstract
Characterization of polysilicon thin-film resistors with irreversible resistance transition
Author(s): Dragan M. Petkovic
Show Abstract

© SPIE. Terms of Use
Back to Top