Share Email Print
cover

PROCEEDINGS VOLUME 1672

Advances in Resist Technology and Processing IX
Editor(s): Anthony E. Novembre
Format Member Price Non-Member Price
Softcover $105.00 * $105.00 *

*Available as a photocopy reprint only. Allow two weeks reprinting time plus standard delivery time. No discounts or returns apply.


Volume Details

Volume Number: 1672
Date Published: 1 June 1992
Softcover: 59 papers (696) pages
ISBN: 9780819408273

Table of Contents
show all abstracts | hide all abstracts
Effects of polymer end groups on chemical amplification
Author(s): Hiroshi Ito; William Preston England; Stephen B. Lundmark
Show Abstract
Toward the development of a stable chemically amplified DUV positive photoresist
Author(s): James W. Thackeray; Diane L. Canistro; Mark Denison; Joseph J. Ferrari; Richard C. Hemond; David R. Medeiros; George W. Orsula; Edward K. Pavelchek; Martha M. Rajaratnam; Roger F. Sinta
Show Abstract
Quantitation of airborne chemical contamination of chemically amplified resists using radiochemical analysis
Author(s): William D. Hinsberg; Scott A. MacDonald; Nicholas J. Clecak; Clinton D. Snyder
Show Abstract
Critical process parameters of an acetal-based deep-UV photoresist
Author(s): Horst Roeschert; Klaus Juergen Przybilla; Walter Spiess; Horst Wengenroth; Georg Pawlowski
Show Abstract
Deep-UV resists with improved delay capabilities
Author(s): Dirk J. H. Funhoff; H. Binder; Reinhold Schwalm
Show Abstract
Characteristics of a chemically amplified silicone-based negative resist in KrF excimer laser lithography
Author(s): Yoshio Kawai; Akinobu Tanaka; Hiroshi Ban; Jiro Nakamura; Tadahito Matsuda
Show Abstract
Alicyclic polymer for ArF and KrF excimer resist based on chemical amplification
Author(s): Yuko Kaimoto; Koji Nozaki; Satoshi Takechi; Naomichi Abe
Show Abstract
Acid diffusion, standing waves, and information theory: a molecular-scale model of chemically amplified resist
Author(s): Peter Trefonas; Mary Tedd Allen
Show Abstract
Tert-Butoxycarbonylated novolac resins as chemically amplified imaging materials
Author(s): Antoni S. Gozdz; John A. Shelburne
Show Abstract
Novel chemical amplification positive-resist material for EB lithography
Author(s): Naoko Kihara; Tohru Ushirogouchi; Tsukasa Tada; Takuya Naito; Satoshi Saito; Osamu Sasaki
Show Abstract
Percolation view of novolak dissolution and dissolution inhibition
Author(s): Tung-Feng Yeh; Hsiao-Yi Shih; Arnost Reiser
Show Abstract
Influence of sensitizer spatial distribution on the dissolution mechanism in diazonaphthoquinone resists
Author(s): Veena Rao; William D. Hinsberg; Curtis W. Frank; Roger Fabian W. Pease
Show Abstract
Design of PACs for high-performance photoresists (I): role of di-esterified PACs having hindered -OH groups
Author(s): Ryotaro Hanawa; Yasunori Uetani; Makoto Hanabata
Show Abstract
Study of photosensitizer for i-line lithography
Author(s): Tomoyuki Kitaori; Seiki Fukunaga; Hiroo Koyanagi; Shin'ichi Umeda; Kohtaro Nagasawa
Show Abstract
Selectively DNQ-esterified PAC for high-performance positive photoresists
Author(s): Kazuya Uenishi; Shinji Sakaguchi; Yasumasa Kawabe; Tadayoshi Kokubo; Medhat A. Toukhy; Alfred T. Jeffries; Sydney G. Slater; Rodney J. Hurditch
Show Abstract
Liquid phase silylation for the DESIRE process
Author(s): Ki-Ho Baik; Kurt G. Ronse; Luc Van den Hove; Bruno Roland
Show Abstract
Ester degradation in the DESIRE process
Author(s): J. P. O'Neil; Khalil I. Arshak; Robert Jan Visser
Show Abstract
Surface-imaged silicon polymers for 193-nm excimer laser lithography
Author(s): Roderick R. Kunz; Mark W. Horn; Russell B. Goodman; Patricia Anne Bianconi; David Alastair M Smith; J. R. Eshelman; Gregory M. Wallraff; Robert D. Miller; Eric J. Ginsburg
Show Abstract
Evolution of MIMMI: a novel surface imaging resist based on metallic surface imaging of organic photoresists
Author(s): Kenneth J. Radigan; Silvia Liddicoat
Show Abstract
Equipment, materials, and process interactions in a surface-imaging process: part II
Author(s): Cesar M. Garza; Eric J. Solowiej; Mark A. Boehm
Show Abstract
Effective parameters of DESIRE process for controlling resist performance at subhalf to quarter-micron rule
Author(s): Kazunori Kato; Kazuo Taira; Toshihiko Takahashi; Kenji Yanagihara
Show Abstract
Electron cyclotron resonance etching of silylated resist
Author(s): Bob Lynch; Siddhartha Das; Michael A. Lieberman; Dennis W. Hess
Show Abstract
Dry development of resist patterns using RIE based on different electrical conductivity
Author(s): Joachim Bargon; Reinhard R. Baumann; Peter Boeker
Show Abstract
Hexafluoroacetone in resist chemistry: a versatile new concept for materials for deep-UV lithography
Author(s): Klaus Juergen Przybilla; Horst Roeschert; Georg Pawlowski
Show Abstract
High-speed aqueous-developing negative resist based on triflic-acid-catalyzed epoxy polymerization
Author(s): Robert D. Allen; Will Conley; Jeffrey D. Gelorme
Show Abstract
Comparative study of deep-UV resist processes for 0.35-um technology
Author(s): Francoise Vinet; Thierry Mourier; Olivier P. Joubert; Michel Heitzmann; Charles Le Cornec; Michel J. Pons; James W. Thackeray; George W. Orsula
Show Abstract
Modeling of postexposure bake and surface inhibition effects in positive photoresist using absolute thickness data
Author(s): Stewart A. Robertson; J. Tom M. Stevenson; Robert J. Holwill; Steven G. Hansen; Charles E. Ebersole; Mark Thirsk; Ivan S. Daraktchiev
Show Abstract
Pattern transfer capabilities of CAMP deep-UV resist
Author(s): Ivan S. Daraktchiev; Dirk Goossens; P. Matthijs; Mark Thirsk; Andrew J. Blakeney; Omkaram Nalamasu; May Cheng
Show Abstract
Dry development of silylated resist: influence of substrate temperature
Author(s): Olivier P. Joubert; Claude Rouyer; Michel J. Pons; Andre P. Weill; Patrick Jean Paniez
Show Abstract
Correlation of Si wafer FTIR spectra with wafer temperatures and resist durability variations in plasma etching processes
Author(s): Gregory Luckman; Carl P. Babcock; Helen L. Maynard; Chris J. Gamsky; James Welch Taylor
Show Abstract
Acid generation and acid diffusion in photoresist films
Author(s): Dennis R. McKean; Robert D. Allen; Paul H. Kasai; Ulrich P. Schaedeli; Scott A. MacDonald
Show Abstract
Analysis of photosensitive salt distribution in polymer films by 19F multiple-quantum NMR
Author(s): Bruce E. Scruggs; Karen K. Gleason
Show Abstract
Postexposure bake characteristics of a chemically amplified deep-ultraviolet resist
Author(s): John L. Sturtevant; Steven J. Holmes; Paul A. Rabidoux
Show Abstract
New positive-acting chemically amplified resist system for electron-beam lithography
Author(s): Hiroo Koyanagi; Shin'ichi Umeda; Seiki Fukunaga; Tomoyuki Kitaori; Kohtaro Nagasawa
Show Abstract
Effect of humidity, residual solvent, and adventitious clean-room contaminants on the performance of AZ-PN
Author(s): Munirathna Padmanaban; Hajime Endo; Yoshio Inoguchi; Yoshiaki Kinoshita; Takanori Kudo; Seiya Masuda; Yasuhiro Nakajima; Georg Pawlowski
Show Abstract
Quarter-micron KrF excimer laser lithography with a chemically amplifying negative resist
Author(s): Akira Oikawa; Shuichi Miyata; Kimihisa Maeda; Hiroyuki Tanaka; Kenji Nakagawa
Show Abstract
DN 21, DN 41: negative-tone photoresists for deep-UV lithography
Author(s): Horst Roeschert; Ralph R. Dammel; Charlotte Eckes; K. Kamiya; Winfried Meier; Klaus Juergen Przybilla; Walter Spiess; Georg Pawlowski
Show Abstract
Lithographic evaluation and characterization of a negative deep-UV resist system for the next generation of DRAMs
Author(s): Doowon Suh; Shane R. Palmer; Subhankar Chatterjee; Hans-Joachim Merrem; Robert C. Haltom
Show Abstract
Experimental investigation of a novel dissolution model
Author(s): Medhat A. Toukhy; Steven G. Hansen; Rodney J. Hurditch; Chris A. Mack
Show Abstract
Studies of dissolution inhibition mechanism of DNQ novolak resists: part III--secondary inhibition with quaternary ammonium salts in development process
Author(s): Kenji Honda; Bernard T. Beauchemin; Rodney J. Hurditch; Andrew J. Blakeney; Tadayoshi Kokubo
Show Abstract
Structural effects of NQD PAC and novolak resin on resist performance
Author(s): Hiroaki Nemoto; Katsumi Inomata; Toshiyuki Ota; Yoshiji Yumoto; Takao Miura; Hitoshi Chawanya
Show Abstract
Lithographic performance and dissolution behavior of novolac resins for various developer surfactant systems
Author(s): Gary E. Flores; James E. Loftus
Show Abstract
Improving resist performance by PROMOTE processing
Author(s): Han J. Dijkstra
Show Abstract
Comparison of etching tools for resist pattern transfer
Author(s): Mark W. Horn; Mark A. Hartney; Roderick R. Kunz
Show Abstract
In-situ IR study of the kinetics of silylation
Author(s): Dan V. Nicolau; Gheorghita Jinescu; Florin Fulga
Show Abstract
Quarter-micron deep-UV lithography with silylation process
Author(s): Masayuki Endo; Takahiro Matsuo; Kazuhiko Hashimoto; Masaru Sasago; Noboru Nomura
Show Abstract
Poly(p-trimethylgermylstyrene sulfone)s as a high-resolution electron-beam resist
Author(s): Seong-Ju Kim; Byung-Sun Park; Haiwon Lee
Show Abstract
Silylation processes for 193-nm lithography using acid-catalyzed resists
Author(s): Mark A. Hartney; James W. Thackeray
Show Abstract
Novel resist patterning strategies for the definition of high resolution via holes in polyimide interlayer dielectric
Author(s): Brian Martin; Neil M. Harper
Show Abstract
Photoresist formulation optimization through the use of statistical design of experimentation
Author(s): Ken L. Bell; Nadine A. Acuna; Sunit S. Dixit; Richard M. Lazarus; George Talor
Show Abstract
Charge transfer approach to negative resists
Author(s): Reinhard R. Baumann; Joachim Bargon
Show Abstract
Limitation of removal particles in positive photoresist
Author(s): Shingo Asaumi; Mitsuhiro Furuta; Akira Yokota
Show Abstract
Physical description of lithographic processes: correlation between bake conditions and photoresist contrast
Author(s): Patrick Jean Paniez; Gilles Festes; Jean-Paul E. Chollet
Show Abstract
Enhancement of deep-UV patterning integrity and process control using antireflective coating
Author(s): Bruce W. Dudley; Susan K. Jones; Charles R. Peters; David A. Koester; Gregg A. Barnes; Tony D. Flaim; James E. Lamb
Show Abstract
Diazonaphthoquinone-sensitized deep-UV resist materials
Author(s): Seiki Fukunaga; Tomoyuki Kitaori; Hiroo Koyanagi; Shin'ichi Umeda; Kohtaro Nagasawa
Show Abstract
Efficient approach for experimental characterization of resist profile in electron-beam-exposed resists
Author(s): Nikolina Atanassova Madjarova
Show Abstract
Fabrication of ultrahigh-quality vertical structures in GaAs
Author(s): Mats Hagberg; Bjorn Jonsson; Anders G. Larsson
Show Abstract
Novel DNQ PACs for high-resolution i-line lithography
Author(s): William R. Brunsvold; Nicholas K. Eib; Christopher F. Lyons; Steve S. Miura; Marina V. Plat; Ralph R. Dammel; O. B. Evans; M. Dalil Rahman; Dinesh N. Khanna; Sangya Jain; Ping-Hung Lu; Stanley A. Ficner
Show Abstract
Nature and degree of substitution patterns in novolaks by carbon-13 NMR spectroscopy
Author(s): Mohammad A. Khadim; M. Dalil Rahman; Dana L. Durham
Show Abstract

© SPIE. Terms of Use
Back to Top