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PROCEEDINGS VOLUME 1595

Rapid Thermal and Integrated Processing
Editor(s): Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong
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Volume Details

Volume Number: 1595
Date Published: 1 February 1992
Softcover: 18 papers (218) pages
ISBN: 9780819407269

Table of Contents
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Modeling and control of rapid thermal processing
Author(s): Charles D. Schaper; Young Man Cho; Poogyeon Park; Stephen A. Norman; Paul Gyugyi; G. Hoffmann; S. Balemi; Stephen P. Boyd; Gregory Franklin; Thomas Kailath; Krishna C. Saraswat
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Review of rapid thermal processing: system design and applications
Author(s): Xiao-Li Xu; Jim J. Wortman; Mehmet C. Ozturk; Furman Yates Sorrell
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Influence of pyrometer signal absorption due to process gas on temperature control in rapid thermal processing
Author(s): Julius C. Chang; Tue Nguyen; James S. Nakos; Josef W. Korejwa
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Application of modern quality improvement techniques to rapid thermal processing
Author(s): Joseph C. Davis; Ronald S. Gyurcsik; Jeng-Chang Lu; Richard H. Perkins
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Wafer emissivity correction using dual-color pyrometry
Author(s): David Mordo; Yuval Wasserman; Arnon Gat
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Improved wafer temperature measurements
Author(s): David W. Voorhes; Deirdre M. Hall
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Applications of surface charge analyzer for use in process control and in-line characterization of reoxidized nitrided oxide (ONO) films
Author(s): James S. Cable; Chandra Kantamneni; Izak Bencuya
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Uniformity characterization of rapid thermal processor thin films
Author(s): Charles B. Yarling; Dawn-Marie Cook
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Epitaxial growth and processing of Si1-xGex/Si for heterojunction bipolar transistors using rapid thermal techniques
Author(s): Judy L. Hoyt; T. Ghani; D. B. Noble; James F. Gibbons
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Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition
Author(s): James C. Sturm; Xiaodong Xiao; H. Manoharan; P. V. Schwartz
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Control of polysilicon emitter interface using RTCVD
Author(s): Ahmad Kermani; Bahram Jalali
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Rapid thermal annealing of ion-implanted InP, InGaAs, and InSb
Author(s): Mulpuri V. Rao
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Damage and RTA kinetics in Ar+ and Si+ ion-implanted CZ silicon characterized by thermal wave modulated optical reflectance
Author(s): Sookap Hahn; Walter Lee Smith; Tohru Hara; H. Hagiwara; H. Suzuki; Yeong-Keun Kwon; Kwang-Il Kim; Y.-H. Bae; W. J. Chung; Charles B. Yarling; L. A. Larson; Richard Meinecke
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RTP for advanced CMOS process integration
Author(s): Mehrdad M. Moslehi; John Kuehne; Lino Velo; David Yin; Dick Yeakley; Steve S.H. Huang; Rhett Barry Jucha; Terence Breedijk
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Oxidation of hydrogen silsesquioxane, (HSiO3/2)n, by rapid thermal processing
Author(s): Theresa E. Gentle
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In-situ characterization of SiO2 deposition and growth for gate-oxides
Author(s): Michael Liehr
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Chemically modified ultrathin oxides fabricated by rapid thermal processing
Author(s): Atul B. Joshi; G. Q. Lo; J. Ahn; Windsor Ting; Dim-Lee Kwong
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Development and characterization of an ultrathin rapid thermal silicon nitride for IC sensor applications
Author(s): Richard A. Williams; Louie J. Arias; Dennis W. Hess
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