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Proceedings of SPIE Volume 1512

Infrared and Optoelectronic Materials and Devices
Editor(s): Ahmed Naumaan; Carlo Corsi; Joseph M. Baixeras; Alain J. Kreisler
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Volume Details

Volume Number: 1512
Date Published: 1 September 1991
Softcover: 31 papers (310) pages
ISBN: 9780819406217

Table of Contents
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Advanced infrared focal-plane arrays
Author(s): Daniel Amingual
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Smart sensors
Author(s): Carlo Corsi
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Si:Ga focal-plane arrays for satellite and ground-based telescopes
Author(s): Patrick Louis Mottier; Patrick Agnese; Pierre-Olivier Lagage
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Performance of infrared systems under field conditions
Author(s): Krzysztof Chrzanowski
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Symmetry properties of reverse-delta-beta directional couplers
Author(s): Terry L. Smith; David K. Misemer; Daniel V. Attanasio; Gretchen L. Crow; Wiley K. Smith; Mary J. Swierczek; James E. Watson
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Fabrication and properties of chalcogenide IR diffractive elements
Author(s): Peter J.S. Ewen; Christopher W. Slinger; Abdolnasser Zakery; Abdelkarim Zekak; A. E. Owen
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InGaAsP/InP distributed-feedback lasers for long-wavelength optical communication systems, lambda=1.55 um: electrical and optical noises study
Author(s): Bernard Pierre Orsal; Robert M. Alabedra; Philippe Signoret; H. Letellier
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Colorimetric characterization of CCD sensors by spectrophotometry
Author(s): Laurence Daligault; Jean Glasser
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Hot carrier silicon phototransistor
Author(s): Steponas P. Asmontas; Jonas Gradauskas; Edmundas Sirmulis
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Advanced infrared detector materials
Author(s): John Brian Mullin
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Molecular beam epitaxy of CdTe and HgCdTe on large-area Si(100)
Author(s): R. Sporken; M. D. Lange; Jean-Pierre Faurie
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PbEuSeTe/Pb1-xSnxTe buried heterostructure diode lasers grown by molecular beam epitaxy
Author(s): Ze'ev Feit; D. Kostyk; R. J. Woods; Paul S. Mak
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Metal-organic molecular beam epitaxy of II-VI materials
Author(s): Christopher J. Summers; Brent K. Wagner; Rudolph G. Benz; Rajesh D. Rajavel
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Bidirectional transmittance distribution function measurements on ZnSe and on ZnS Cleartran
Author(s): Mauro Melozzi; Alessandro Mazzoni; Gianfranco Curti
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Intrinsic carrier concentration and effective masses in Hg1-xMnxTe
Author(s): Antoni Rogalski
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Interferometric analysis of absorbing objects
Author(s): S. V. Korehazhkin; L. O. Krasnova
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New semiconductor material A1xInAsySb/InAs: LPE synthesis and properties
Author(s): N. A. Charykov; Alexandr M. Litvak; Konstantin D. Moiseev; Yury P. Yakovlev
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Nonstoichiometry effect on mercury thiogallate luminescence
Author(s): Alexander P. Yelisseyev; Elena Feodormna Sinyakova
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Nonlinear polymers and devices
Author(s): Gustaaf R. Moehlmann; Winfried H. G. Horsthuis; Benno H. M. Hams
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HTC microbolometer for far-infrared detection
Author(s): Claus Barholm-Hansen; Mogens T. Levinsen
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Ellipsometric studies of the optical anisotropy of GdBa2Cu3O7-x epitaxial films
Author(s): Ansheng Liu; Ole Keller
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Microwave characterization of high-Tc superconducting thin films for simulation and realization of planar microelectronic circuits
Author(s): J. C. Carru; F. Mehri; D. Chauvel; Y. Crosnier
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Characterization of a high-critical-temperature superconducting thin film by the ring resonator method
Author(s): Maurice Pyee; Pascal Meisse; Henry Baudrand; Michel Chaubet
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Growth and characterization of ultrathin SimGen strained-layer superlattices
Author(s): Hartmut Presting; Milan Jaros; Gerhard Abstreiter
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Epitaxial growth of the semiconducting silicide FeSi2 on silicon
Author(s): Joel Simon Roge Chevrier; V. Le Thanh; J. Derrien
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Formation and electronic properties of epitaxial erbium silicide
Author(s): Tan T.A. Nguyen; J. Y. Veuillen
128 x 128 MWIR InSb focal plane and camera system
Author(s): William J. Parrish; John D. Blackwell; Robert C. Paulson; Harold Arnold
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Magnetoconcentration nonequilibrium IR photodetectors
Author(s): Jozef Piotrowski; Zoran G. Djuric
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10.6-um TEM00 beam transmission characteristics of a hollow circular cross-section multimode waveguide
Author(s): Richard Michael Jenkins; R. W. J. Devereux
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Free-electron lasers as light sources for basic research
Author(s): P. Wim van Amersfoort
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Applications of high-Tc superconductors in optoelectronics
Author(s): Roman Sobolewski
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