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Proceedings of SPIE Volume 1466

Advances in Resist Technology and Processing VIII
Editor(s): Hiroshi Ito
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Volume Details

Volume Number: 1466
Date Published: 1 June 1991
Softcover: 62 papers (692) pages
ISBN: 9780819405654

Table of Contents
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Airborne chemical contamination of a chemically amplified resist
Author(s): Scott A. MacDonald; Nicholas J. Clecak; H. Russell Wendt; C. Grant Willson; Clinton D. Snyder; C. J. Knors; N. B. Deyoe; John G. Maltabes; James R. Morrow; Anne E. McGuire; Steven J. Holmes
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Preliminary lithographic characteristics of an all-organic chemically amplified resist formulation for single-layer deep-UV lithography
Author(s): Omkaram Nalamasu; Elsa Reichmanis; May Cheng; Victor Pol; Janet M. Kometani; Francis M. Houlihan; Thomas X. Neenan; M. P. Bohrer; David A. Mixon; Larry F. Thompson; Clifford H. Takemoto
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Onium salt structure/property relationships in poly(4-tert-butyloxycarbonyloxystyrene) deep-UV resists
Author(s): George Schwartzkopf; Nagla N. Niazy; Siddhartha Das; Geetha Surendran; John B. Covington
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Dissolution inhibition mechanism of ANR photoresists: crosslinking vs. -OH site consumption
Author(s): James W. Thackeray; George W. Orsula; Martha M. Rajaratnam; Roger F. Sinta; Daniel J.C. Herr; Edward K. Pavelchek
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Chemically amplified negative-tone photoresist for sub-half-micron device and mask fabrication
Author(s): Will Conley; Robert Dundatscheck; Jeffrey D. Gelorme; John Horvat; Ronald M. Martino; Elizabeth Murphy; Anne Petrosky; Gary T. Spinillo; Kevin J. Stewart; Robert Wilbarg; Robert L. Wood
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New aqueous base-developable negative-tone photoresist based on furans
Author(s): James T. Fahey; Jean M. J. Frechet
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Novel acid-hardening positive photoresist technology
Author(s): Karen A. Graziano; Stephen D. Thompson; Mark R. Winkle
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Single-component chemically amplified resist materials for electron-beam and x-ray lithography
Author(s): Anthony E. Novembre; Woon Wai Tai; Janet M. Kometani; James E. Hanson; Omkaram Nalamasu; Gary N. Taylor; Elsa Reichmanis; Larry F. Thompson
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Structural effects of DNQ-PAC backbone on resist lithographic properties
Author(s): Kazuya Uenishi; Yasumasa Kawabe; Tadayoshi Kokubo; Sydney G. Slater; Andrew J. Blakeney
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Exposure dose optimization for a positive resist containing polyfunctional photoactive compound
Author(s): Peter Trefonas; Chris A. Mack
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Novolak design for high-resolution positive photoresists (IV): tandem-type novolak resin for high-performance positive photoresists
Author(s): Makoto Hanabata; F. Oi; Akihiro Furuta
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Studies of dissolution inhibition mechanism of DNQ-novolak resist (II): effect of extended ortho-ortho bond in novolak
Author(s): Kenji Honda; Bernard T. Beauchemin; Edward A. Fitzgerald; Alfred T. Jeffries; Sobhy P. Tadros; Andrew J. Blakeney; Rodney J. Hurditch; Shiro Tan; Shinji Sakaguchi
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Novolak resin design concept for high-resolution positive resists
Author(s): Tsutomu Noguchi; Hidemi Tomita
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Novel novolak resins using substituted phenols for high-performance positive photoresist
Author(s): Toru Kajita; Toshiyuki Ota; Hiroaki Nemoto; Yoshiji Yumoto; Takao Miura
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Progress in DUV resins
Author(s): Klaus Juergen Przybilla; Heinz Roeschert; Walter Spiess; Charlotte Eckes; Subhankar Chatterjee; Dinesh N. Khanna; Georg Pawlowski; Ralph R. Dammel
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Dissolution of poly(p-hydroxystyrene): molecular weight effects
Author(s): Treva Long; Ferdinand Rodriguez
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Evaluation of poly(p-trimethylsilylstyrene and p-pentamethyldisilylstyrene sulfone)s as high-resolution electron-beam resists
Author(s): Antoni S. Gozdz; Hiroshi Ono; Seiki Ito; John A. Shelburne; Minoru Matsuda
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Bilayer resist system utilizing alkali-developable organosilicon positive photoresist
Author(s): Kazuo Nate; Akiko Mizushima; Hisashi Sugiyama
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Polysilanes for microlithography
Author(s): Gregory M. Wallraff; Robert D. Miller; Nicholas J. Clecak; M. Baier
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Polysilyne resists for 193 nm excimer laser lithography
Author(s): Roderick R. Kunz; Patricia Anne Bianconi; Mark W. Horn; R. R. Paladugu; David C. Shaver; David Alastair M Smith; Charles A. Freed
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Application aspects of the Si-CARL bilayer process
Author(s): Michael Sebald; Joerg Berthold; Michael Beyer; Rainer Leuschner; Christoph Noelscher; Ulrich Scheler; Recai Sezi; Hellmut Ahne; Siegfried Birkle
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Evaluation of phenolic resists for 193 nm surface imaging
Author(s): Mark A. Hartney; Donald W. Johnson; Allen C. Spencer
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In-situ monitoring of silylation mechanisms by laser interferometry
Author(s): Christophe Pierrat; Patrick Jean Paniez; P. Martin
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Study of silylation mechanisms and kinetics through variations in silylating agent and resin
Author(s): T. Teresa Dao; Chris A. Spence; Dennis W. Hess
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Generalized characteristic model for lithography: application to negative chemically amplified resists
Author(s): David H. Ziger; Chris A. Mack; Romelia G. Distasio
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Reliability of contrast and dissolution-rate-derived parameters as predictors of photoresist performance
Author(s): Peggy M. Spragg; Rodney J. Hurditch; Medhat A. Toukhy; John N. Helbert; Sandeep Malhotra
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Effect of sensitizer spatial distribution on dissolution inhibition in novolak/diazonaphthoquinone resists
Author(s): Veena Rao; Laura L. Kosbar; Curtis W. Frank; Roger Fabian W. Pease
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Some experimental techniques for characterizing photoresists
Author(s): Chris A. Spence; Richard A. Ferguson
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Physical aging of resists: the continual evolution of lithographic material
Author(s): Patrick Jean Paniez; Andre P. Weill; Stephane D. Cohendoz
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Study of the chemically amplifiable resist materials for electron-beam lithography
Author(s): Hiroo Koyanagi; Shin'ichi Umeda; Seiki Fukunaga; Tomoyuki Kitaori; Kohtaro Nagasawa
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Novel base-generating photoinitiators for deep-UV lithography
Author(s): Charles Kutal; Scott K. Weit; Robert D. Allen; Scott A. MacDonald; C. Grant Willson
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Nonmetallic acid generators for i-line and g-line chemically amplified resists
Author(s): William R. Brunsvold; Warren Montgomery; Bao Hwang
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Polyvinylphenols protected with tetrahydropyranyl group in chemical amplification positive deep-UV resist systems
Author(s): Nobuaki Hayashi; Leo Schlegel; Takumi Ueno; Hiroshi Shiraishi; Takao Iwayanagi
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Mechanistic studies on the poly(4-tert-butoxycarbonyloxystyrene)/triphenylsulfonium salt photoinitiation process
Author(s): Nigel P. Hacker; Kevin M. Welsh
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Process latitude for the chemical amplification resists AZ PF514 and AZ PN114
Author(s): Charlotte Eckes; Georg Pawlowski; Klaus Juergen Przybilla; Winfried Meier; Michel Madore; Ralph R. Dammel
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Negative chemical amplification resist systems based on polyhydroxystyrenes and N-substituted imides or aldehydes
Author(s): Hiroshi Ito; Klaas Schildknegt; Eugene A. Mash
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Acid-catalyzed pinacol rearrangement: chemically amplified reverse polarity change
Author(s): Ratnam Sooriyakumaran; Hiroshi Ito; Eugene A. Mash
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Negative resist systems using acid-catalyzed pinacol rearrangement reaction in a phenolic resin matrix
Author(s): Shou-ichi Uchino; Takao Iwayanagi; Takumi Ueno; Nobuaki Hayashi
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Preparations and properties of novel positive photosensitive polyimides
Author(s): Rumiko Horiguchi Hayase; Naoko Kihara; Naohiko Oyasato; S. Matake; Masayuki Oba
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Novel quinonediazide-sensitized photoresist system for i-line and deep-UV lithography
Author(s): Seiki Fukunaga; Tomoyuki Kitaori; Hiroo Koyanagi; Shin'ichi Umeda; Kohtaro Nagasawa
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Structure of poly(p-hydroxystyrene) film
Author(s): Minoru Toriumi; Masatoshi Yanagimachi; Hiroshi M. Masuhara
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DQN photoresist with tetrahydroxydiphenylmethane as ballasting group in PAC
Author(s): Chao Huei Tzeng; Dhei-Jhai Lin; Song-Shiang Lin; Dong-Tsair Huang; Hwang-Kuen Lin
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Mechanism of dissolution inhibition of novolak-diazoquinone resist
Author(s): Mitsuhiro Furuta; Shingo Asaumi; Akira Yokota
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Dissolution kinetics of high-resolution novolac resists
Author(s): Katsuyuki Itoh; Koji Yamanaka; Hiroshi Nozue; Kunihiko Kasama
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Technology and chemistry of high-temperature positive resist
Author(s): Medhat A. Toukhy; Thomas R. Sarubbi; David J. Brzozowy
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Surface imaging on the basis of phenolic resin: experiments and simulation
Author(s): Lothar Bauch; Ulrich A. Jagdhold; Helge H. Dreger; Joachim J. Bauer; Wolfgang W. Hoeppner; Hartmut H. Erzgraeber; Georg G. Mehliss
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Synthesis and lithographic evaluation of alternating copolymers of linear and cyclic alkenyl(di)silanes with sulfur dioxide
Author(s): Antoni S. Gozdz; John A. Shelburne
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Novel surface imaging masking technique for high-aspect-ratio dry etching applications
Author(s): Gary S. Calabrese; Livingstone N. Abali; John F. Bohland; Edward K. Pavelchek; Prasit Sricharoenchaikit; Gerald Vizvary; Stephen M. Bobbio; Patrick Smith
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Highly sensitive microresinoid siloxane resist for EB and deep-UV lithography
Author(s): Satomi Yamazaki; Shinji Ishida; Hiroshi Matsumoto; Naoaki Aizaki; Naohiro Muramoto; Katsutoshi Mine
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Progress in the study of development-free vapor photolithography
Author(s): Xiaoyin Hong; Dan Liu; Zhong-Zhe Li; Ji-Quang Xiao; Gui-Rong Dong
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Resist design for dry-developed positive working systems in deep-UV and e-beam lithography
Author(s): Francoise Vinet; Michele Chevallier; Christophe Pierrat; Jean Charles Guibert; Charles Rosilio; B. Mouanda; A. Rosilio
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Effect of silylation condition on the silylated image in the DESIRE process
Author(s): Kazuo Taira; Junichi Takahashi; Kenji Yanagihara
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Dry development and plasma durability of resists: melt viscosity and self-diffusion effects
Author(s): Patrick Jean Paniez; Olivier P. Joubert; Michel J. Pons; Jean Claude Oberlin; Andre P. Weill
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Oxygen plasma etching of silylated resist in top-imaging lithographic process
Author(s): Han J. Dijkstra
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Applicability of dry developable deep-UV lithography to sub-0.5 um processing
Author(s): Anne-Marie Goethals; Ki-Ho Baik; Luc Van den Hove; Serge V. Tedesco
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Characterizing a surface imaging process in a high-volume DRAM manufacturing production line
Author(s): Cesar M. Garza; David L. Catlett; Ricky A. Jackson
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Optimization of optical properties of resist processes
Author(s): Timothy A. Brunner
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Critical dimension shift resulting from handling time variation in the track coat process
Author(s): John M. Kulp
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Resist parameter extraction with graphical user interface in X
Author(s): Anita S. Chiu; Richard A. Ferguson; Takeshi Doi; Alfred K. K. Wong; Nelson Tam; Andrew R. Neureuther
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Process latitude measurements on chemically amplified resists exposed to synchrotron radiation
Author(s): Carl P. Babcock; James Welch Taylor; Monroe Sullivan; Doowon Suh; Dean Plumb; Shane R. Palmer; Amanda K. Berry; Karen A. Graziano; Theodore H. Fedynyshyn
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Simulation of connected image reversal and DESIRE techniques for submicron lithography
Author(s): Dan V. Nicolau; Mircea V. Dusa; Florin Fulga
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Process control capability using a diaphragm photochemical dispense system
Author(s): Terrell D. Cambria; Scott F. Merrow
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