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PROCEEDINGS VOLUME 1362

Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Editor(s): Manijeh Razeghi

*This item is only available on the SPIE Digital Library.


Volume Details

Volume Number: 1362
Date Published: 1 February 1991

Table of Contents
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Surface plasmon enhanced light emission in GaAs/AlGaAs light emitting diodes
Author(s): Erich Gornik; Anton Koeck; C. Thanner; Lutz Korte
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High-efficiency vertical-cavity lasers and modulators
Author(s): Larry A. Coldren; Scott W. Corzine; Randall S. Geels; Arthur C. Gossard; K. K. Law; James L. Merz; Jeff W. Scott; Robert J. Simes; Ran Hong Yan
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New materials for high-performance III-V ICs and OEICs: an industrial approach
Author(s): Gerard Maric Martin; Peter M. Frijlink
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High-Tc superconductors, physics, and applications
Author(s): Julien Bok
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Superconducting YBa2Cu307 films for novel optoelectronic device structures
Author(s): Davor Pavuna; Benjamin Dwir; Andrea Gauzzi; Jonathan H. James; Bruce J. Kellett
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Thin films of YBaCuO for electronic applications
Author(s): Joseph M. Baixeras; Ferechteh Hosseini Teherani; Alain J. Kreisler; Alain Straboni; Kathy Barla
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Growth and properties of YBCO thin films by metal-organic chemical vapor deposition and plasma-enhanced MOCVD
Author(s): Jing-Fu Zhao; Y. Q. Li; Chyi Shyuan Chern; Wei-Feng Huang; Peter E. Norris; B. M. Gallois; B. H. Kear; P. Lu; G. A. Kulesha; F. Cosandey
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Long-wavelength GaAs quantum-well infrared photodetectors
Author(s): Barry F. Levine
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Corbino-capacitance technique for contactless measurements on conducting layers: application to persistent photoconductivity
Author(s): Ole Per Hansen; Anders Kristensen; Henrik Bruus; Manijeh Razeghi
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Modulation doping and delta doping of III-V compound semiconductors
Author(s): Peter Hendriks; E. A. E. Zwaal; Jos E. M. Haverkort; Joachim H. Wolter
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Quasi-three-dimensional electron systems and superlattices in wide parabolic wells: fabrication and physics
Author(s): Mansour Shayegan
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Structure optimization of selectively doped heterojunctions: evidences for a magnetically induced Wigner solidification
Author(s): Bernard Etienne; E. Paris; C. Dorin; Veronique Thierry-Mieg; F. I. B. Williams; D. C. Glattly; G. Deville; E. Y. Andrei; Oliver Probst
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Recent progress in device-oriented II-VI research at the University of Wuerzburg
Author(s): Gottfried Landwehr; Andreas Waag; K. Hofmann; Norbert Kallis; Robert N. Bicknell-Tassius
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Cold to hot electron transition devices
Author(s): Chun-Yen Chang
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Optically coupled 3-D common memory with GaAs on Si structure
Author(s): Masataka Hirose; Harumi Takata; Mitsumasa Koyanagi
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InGaAs/InP monolithic photoreceivers for 1.3-1.5 um optical fiber transmission
Author(s): Andre Scavennec; M. Billard; P. Blanconnier; E. Caquot; P. Carer; Louis Giraudet; L. Nguyen; F. Lugiez; Jean-Pierre Praseuth
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Optical fiber amplifiers
Author(s): Tetsuhiko Ikegami; Motohiro Nakahara
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Semiconductor waveguides for optical switching
Author(s): Suzanne Laval
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Invited paper: Millimeter-wave and optoelectronic applications of heterostructure integrated circuits
Author(s): Dimitris Pavlidis
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Current technologies for very high performance VLSI ICs
Author(s): Ernesto H. Perea
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Lattice-mismatched elemental and compound semiconductor heterostructures for 2-D and 3-D applications
Author(s): El-Hang Lee
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Magnetocapacitance and photoluminescence spectroscopy studies of charge storage, bistability, and energy relaxation effects in resonant tunneling devices
Author(s): Laurence Eaves; David Hayes; M. L. Leadbeater; P. E. Simmonds; Maurice S. Skolnick
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Regular doping structures: a Si-based, quantum-well infrared detector
Author(s): J. Frederick Koch
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Theory of optical-phonon interactions in a rectangular quantum wire
Author(s): Michael A. Stroscio; Ki Wook Kim; Michael A. Littlejohn
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Nonlinear energy transfer between nanosecond pulses in iron-doped InP crystals
Author(s): Gerald Roosen
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Quantum-well excitonic devices for optical computing
Author(s): Jasprit Singh; Pallab Bhattacharya
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III-V semiconductor integrated optoelectronics for optical computing
Author(s): Osamu Wada
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Wave-function engineering in Si-Ge microstructures: linear and nonlinear optical response
Author(s): Milan Jaros; Richard M. Turton
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Indirect stimulated emission at room temperature in the visible range
Author(s): Michael Rinker; Heinz Kalt; Yin-Cheng Lu; Elisabeth Bauser; Klaus Koehler
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Some characteristics of 3.2 um injection lasers based on InAsSb/InAsSbP system
Author(s): Habib Mani; Andre Francis Joullie
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InGaAs/AlGaAs vertical optical modulators and sources on a transparent GaAs substrate
Author(s): Luc Buydens; Piet M. A. Demeester; Peter M. De Dobbelaere; Peter Van Daele
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Generalization of Bragg reflector geometry: application to (Ga,Al)As - (Ca,Sr)F2 reflectors
Author(s): Chantal Fontaine; Philippe Requena; Antonio Munoz-Yague
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Optoelectronic and optical bistabilities of photocurrent and photoluminescence at low-temperature avalanche breakdown in GaAs epitaxial films
Author(s): Oleg A. Ryabushkin; Nikolay S. Platonov; Vladimir A. Sablikov; V. I. Sergeyev; Vladimir Antonovich Bader
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Metal-superconductor-insulator transitions in oxide materials
Author(s): W. Y. Liang
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Performances of gallium arsenide on silicon substrate photoconductive detectors
Author(s): Monique T. Constant; Luc Boussekey; Didier J. Decoster; Jean-Pierre Vilcot
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Characterization of picosecond GaAs metal-semiconductor-metal photodetectors
Author(s): Josef Rosenzweig; C. Moglestue; A. Axmann; Joachim Schneider; Axel Huelsmann; M. Lambsdorff; Juergen Kuhl; Markus Klingenstein; H. Leier; Alfred W. B. Forchel
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InGaAs/GaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 1.3 um grown by molecular beam epitaxy
Author(s): Boris S. Elman; Jagannath Chirravuri; A. N. M. Masu Choudhury; Andrew Silletti; Andrew J. Negri; J. Powers
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Band-structure dependence of impact ionization: bulk semiconductors, strained Ge/Si alloys, and multiple-quantum-well avalanche photodetectors
Author(s): Igor K. Czajkowski; Jeremy Allam; Alfred R. Adams
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Advanced InGaAs/InP p-type pseudomorphic MODFET
Author(s): Eric Malzahn; Michael Heuken; Detlev A. Gruetzmacher; M. Stollenwerk; Klaus Heime
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Use of admittance spectroscopy to probe the DX-centers in AlGaAs
Author(s): S. Subramanian; S. Chakravarty; S. Anand; B. M. Arora
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Hot carrier relaxation in bulk InGaAs and quantum-wells
Author(s): Andrew Gregory; Richard T. Phillips; Fariduddin A. Majumder
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Far-IR magneto-emission study of the quantum-hall state and breakdown of the quantum-hall effect
Author(s): Andre Raymond; C. Chaubet; Manijeh Razeghi
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Bias dependence of the hole tunneling time in AlAs/GaAs resonant tunneling structures
Author(s): Chris A. Van Hoof; Etienne Goovaerts; Gustaaf Borghs
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Picosecond photocurrent measurements of negative differential velocity in GaAs/AlAs superlattices
Author(s): Christophe Minot; H. Le Person; Francis Mollot; Jean Francois Palmier
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Transport time and single-particle relaxation time in two-dimensional semiconductors
Author(s): Alfred Gold
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Buried-ridge-stripe lasers monolithically integrated with butt-coupled passive waveguides for OEIC
Author(s): D. Remiens; V. Hornung; B. Rose; D. Robein
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Integrated optical devices with silicon oxynitride prepared by plasma-enhanced chemical vapor deposition (PECVD) on Si and GaAs substrates
Author(s): Dethard Peters; Joerg Mueller
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Refractive index of multiple-quantum-well waveguides subject to impurity induced disordering using boron and fluorine
Author(s): Stein I. Hansen; John H. Marsh; John Stuart Roberts; C. Jeynes
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Ferroelectric microdomain reversal on Y-cut LiNbO3 surfaces
Author(s): Holger Seibert; Wolfgang Sohler
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Absorption, fluorescence, and stimulated emission in Ti-diffused Er:LiNbO3 waveguides
Author(s): R. Brinkmann; Wolfgang Sohler; Hubertus Suche
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Optical nonlinearities due to long-lived electron-hole plasmas
Author(s): Philip Dawson; Ian Galbraith; Alicia I. Kucharska; C. Thomas Foxon
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Semiconductor laser amplifiers as all-optical frequency converters
Author(s): Nikolaus Schunk; Gerd Grosskopf; Reinhold Ludwig; Ronald Schnabel; Hans-Georg Weber
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Resonant behavior of the temporal response of the photorefractive InP:Fe under dc fields
Author(s): Ahmed M. Abdelghani-Idrissi; Cafer Ozkul; Nicole Wolffer; Philippe Gravey; Gilbert Picoli
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Optical nonlinearities in ZnSe multiple-quantum-wells
Author(s): Yudong Liu; Shutian Liu; Chunfei Li; De Zen Shen; Xiwu Fan; Guang Han Fan; Lian Chun Chen
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Asymmetric superlattices for microwave detection
Author(s): Richard T. Syme; Michael Joseph Kelly; Angus Condie; Ian Dale
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Dynamic behavior of internal elements of high-frequency integrated circuits studied by time-resolved optical-beam-induced current (OBIC) method
Author(s): Harald Bergner; Klaus Hempel; Uwe Stamm
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III-V monolithic resonant photoreceiver on silicon substrate for long-wavelength operation
Author(s): Samir Aboulhouda; Manijeh Razeghi; Jean-Pierre Vilcot; Didier J. Decoster; M. Francois; Sophie Maricot
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Picosecond optoelectronic semiconductor switching and its application
Author(s): Volkmar Brueckner; Harald Bergner; Matthias Lenzner; Reiner Strobel
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Novel doping superlattice-based PbTe-IR detector device
Author(s): Josef Oswald; Manfred Pippan; Beate Tranta; Guenther E. Bauer
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Efficient optical waveguide modulation based on Wannier-Stark localization in a InGaAs-InAlAs superlattice
Author(s): Erwan Bigan; Michel Allovon; Madeleine Carre; Alain Carenco; Paul H. Voisin
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Optimization of reflection electro-absorption modulators
Author(s): Bardia Pezeshki; Dominique Thomas; James S. Harris Jr.
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Amplification of amplitude modulated signals in a self-pumped photorefractive phase conjugator
Author(s): Paul Michael Petersen; Preben Buchhave
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Influence of the p-type doping of the InP cladding layer on the threshold current density in 1.5 um QW lasers
Author(s): Bernard Sermage; M. Blez; Christophe Kazmierski; Abdallah Ougazzaden; Andrei Mircea; Jean-Claude Bouley
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Novel device for short-pulse generation using optoelectronic feedback
Author(s): Paul J.A. Phelan; John Hegarty; Wolfgang E. Elsaesser
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Second harmonic generation of diode laser radiation in KNbO3
Author(s): Niko F. van Hulst; Gerard J.T. Heesink; H. de Leeuw; Bouwe Bolger
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Spontaneous emission amplification and the utmost energy characteristics of solid state lasers on the base of optically dense media
Author(s): Alexander Anatolievi Danilov; Svjatoslav Nicolaevit Sorokin
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Temperature instability in silicon-based microheating device
Author(s): Jin-Shown Shie; Jiunn-Long Lian
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Comparative analysis of external factors' influences on the GaP light-emitting p-n-junctions
Author(s): Igor V. Rizikov; George S. Svechnikov; Sergey V. Bulyarsky; Alexander S. Ambrozevich
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External factors' influences on AIIIBV light-emitting structures
Author(s): George S. Svechnikov; Igor V. Rizikov
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Dynamical properties of superconducting superlattices
Author(s): Alexander A. Andronov; Vladimir N. Genkin; Mark Ghinovker; V. G. Kurin; I. Nefedov; A. Okomelkov; I. A. Shereshevsky
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Bonding and nonequilibrium crystallization of a-C:H/a-Se and a-C:H/KCl
Author(s): Da-Ren He; Xiuyan Ji; Ruo Bao Wang; Qihai Liu; Wangdi Wang; Maili Liu; Weizong Chen; Zhiyuan Liu; Wanxi Ji; Ren-ji Zhang
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Nonlinear properties of quasi-optic open resonator with a layer of Crv solution in heavy alcohol under the conditions of magnetic resonance
Author(s): Alexey A. Vertiy; Sergiy P. Gavrilov
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Infrared detector arrays with integrating cryogenic read-out electronics
Author(s): Detlef Engemann; Rudolf Faymonville; Rainer Felten; Otto Frenzl
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Equivalent capacitance photodiode determination by an optical method
Author(s): Adrian Gh. Podoleanu; Paul E. Sterian; Ion M. Popescu; Niculae N. Puscas
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Numerical solution of the one-dimensional Schrodinger equation: application to heterostructures and superlattices
Author(s): Stefano Bottacchi
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Neutron transmutation doping of silicon in the VVR-S type nuclear reactor
Author(s): Eugenia T. Halmagean
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Current-voltage characteristics of resonant tunneling diodes
Author(s): Susanta Sen; B. R. Nag; S. Midday
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Generalized transport model for heterojunction: a computer modeling approach
Author(s): Giovanni Bellomi; Stefano Bottacchi
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Current transport in charge injection devices
Author(s): Chao-Wen Wu; Hao-Hsiung Lin
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Behaviour of a single quantum-well under deep level transient spectroscopy (DLTS) measurement: a new theoretical model
Author(s): Xavier Letartre; Didier Stievenard; R. Barbier
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Relaxation-rate of phonon momentum in semiconductors
Author(s): Rita Gupta; Brian K. Ridley
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Energy and momentum relaxation of electrons in GaAs quantum-wells: effect of nondrifting hot phonons and interface roughness
Author(s): Rita Gupta; Naci Balkan; Brian K. Ridley; M. T. Emeny
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Study of novel oscillations in degenerate GaAs/A1GaAs quantum-wells using electro-optic voltage probing
Author(s): Ernest S.-M. Tsui; Anthony J. Vickers
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Design optimization of three-stage GaAs monolithic optical amplifier using SPICE
Author(s): M. S. Yadav; D. C. Dumka; Ramesh C. Ramola; Subodh Johri; Harshad S. Kothari; Babu Ram Singh
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Characterization of the photorefractive effect in Ti:LiNbO3 stripe waveguides
Author(s): Raimund Volk; Wolfgang Sohler
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Integrated optical channel waveguides in silicon using SiGe alloys
Author(s): Armin O. Splett; Joachim Schmidtchen; Berndt Schueppert; Klaus Petermann
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Nondestructive investigations of multilayer dielectrical coatings
Author(s): Alexander G. Shapiro; Igor V. Yaminsky
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High-efficient fiber-to-stripe waveguide coupler
Author(s): Andrzej W. Domanski; Marcin Roszko; Marek Wojciech Sierakowski
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Deep-level configuration of GaAs:Si:Cu: a material for a new type of optoelectronic switch
Author(s): Karl H. Schoenbach; Hans-Joachim Schulz; Vishnu K. Lakdawala; B. M. Kimpel; Ralf Peter Brinkmann; Rudolf K.F. Germer; Gordon R. Barevadia
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Devices for generation and detection of subnanosecond IR and FIR radiation pulses
Author(s): Eugene V. Beregulin; Sergey D. Ganichev; Ilya D. Yaroshetskii; Peter Lang; Wolfgang Schatz; Karl F. Renk
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Theoretical study of ultrafast dephasing by four-wave mixing
Author(s): Claudine Hoerner; J. P. Lavoine; A. A. Villaeys
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Wave-vector-dependent magneto-optics in semiconductors
Author(s): Edmondo De Salvo; Raffaello Girlanda
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Nonlinear optical gain in InGaAs/InGaAsP quantum-wells
Author(s): M. Rosenzweig; M. Moehrle; H. Dueser; M. Tischel; R. Heitz; Axel Hoffmann
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Growth, surface passivation, and characterization of CdSe microcrystallites in glass with respect to their application in nonlinear optics
Author(s): Ulrike Woggon; I. Rueckmann; J. Kornack; Matthias Mueller; J. Cesnulevicius; Jonas Kolenda; Mindaugas Petrauskas
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Homogeneous thin film lens on LiNbO3
Author(s): Pisu Jiang; Peter J. R. Laybourn; Giancarlo C. Righini
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Optical fiber units with ferroelectric liquid crystals for optical computing
Author(s): Andrzej W. Domanski; Marcin Roszko; Marek Wojciech Sierakowski
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Effective laser with active element rectangular geometry
Author(s): Alexander Anatolievi Danilov; Ernest Y. Nikirui; Vyacheslav V. Osiko; Valery G. Polushkin; Svjatoslav Nicolaevit Sorokin; M. I. Timoshechkin
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Microstructure and superconducting properties of Y1Ba2Cu3O7-delta thin films grown by rapid thermal annealing (RTA) as a function of crystalline structure of zirconia substrates
Author(s): Ferechteh Hosseini Teherani; Alain J. Kreisler; Joseph M. Baixeras
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New concept for multiwafer production of highly uniform III-V layers for optoelectronic applications by MOVPE
Author(s): Meino Heyen
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Shallow-deep bistability behavior of the DX-centers in n-AlxGa1-xAs and the EL2-defects in n-GaAs
Author(s): Abderrahmane Kadri; Jean-Claude Portal
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Bistability of the Sn donor in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy
Author(s): Pierre J. L. Gibart; Don L. Williamson
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Spectral hole burning of strongly confined CdSe quantum dots
Author(s): Christine Spiegelberg; Fritz Henneberger; Joachim Puls
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Photodetectors: how to integrate them with microelectronic and optical devices
Author(s): Didier J. Decoster; Jean-Pierre Vilcot
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Preamplifiers of the high-ohmic high-speed photodetector signals
Author(s): Yevgeny Kovzigin; Yevgeny Potylitsyn
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