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Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors III
Editor(s): Robert R. Alfano

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Volume Details

Volume Number: 1282
Date Published: 1 August 1990

Table of Contents
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Correlation of hot carrier and hot phonon effects in semiconductors on a picosecond time scale
Author(s): Henry M. van Driel; Andreas Othonos; Jeffrey F. Young; Paul J. Kelly
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Effect of phonon confinement in quantum well systems
Author(s): Paolo Lugli; Paoli Bordone; S. Gualdi; Stephen M. Goodnick
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Effect of hot phonons on the ultrafast relaxation of holes in GaAs
Author(s): Mohamed A. Osman; Marc M. Cahay
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Nonequilibrium phonon effects on the transient expansion of photogenerated electron-hole plasmas
Author(s): Ravindra P. Joshi; Kong-Thon F. Tsen; David K. Ferry
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Picosecond nonlinear optical characterization of GaAs at lamda=1.064 um
Author(s): Antoniangelo Agnesi; Gian Piero Banfi; Mauro M. Costa; Martina Ghigliazza; Giancarlo C. Reali
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Study of hot carrier relaxation in quantum wells by subpicosecond Raman scattering
Author(s): Dai-sik Kim; Peter Y. Yu
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Femtosecond investigations of optical switching and X(3) in GaAs waveguides
Author(s): Michael J. LaGasse; Kristin K. Anderson; Christine A. Wang; Hermann A. Haus; James G. Fujimoto
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Gamma -> L intervalley and polar optic scattering times in GaAs from cw hot electron luminescence spectroscopy
Author(s): Wolfgang K. P. Hackenberg; Gerhard Fasol; Elisabeth Bauser; Klaus H. Ploog
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Intervalley scattering times from the rigid-pseudoion method
Author(s): Stefan Zollner; Sudha Gopalan; Manuel Cardona
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Determination of the intervalley X6 --> Gamma6, L6 scattering time and the density of states effective mass of the X7 band in GaAs by picosecond time-resolved absorption spectroscopy
Author(s): Wubao B. Wang; Nathan Ockman; Michael A. Cavicchia; Ming Yan; Robert R. Alfano
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Role of electron-electron scattering on ultrafast probe phenomena of photoexcited carriers in GaAs
Author(s): Meng-Jeng Kann; Alfred M. Kriman; David K. Ferry
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Dynamics of nonthermal intrinsic excitons in GaAs quantum wells
Author(s): Theodore C. Damen; Jagdeep Shah; Daniel Y. Oberli; Daniel S. Chemla; John E. Cunningham
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Ultrafast laser probe of interband absorption edges in 3-D and 2-D semiconductors
Author(s): Michael C. Downer; David H. Reitze; Glenn Focht
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Electron-hole plasma thermalization in the GaAs/AlGaAs system: bulk, quantum wells, and superlattices
Author(s): Karl Leo; Wolfgang W. Ruehle; Elisabeth Bauser; Klaus H. Ploog
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Direct measurement of ultrafast carrier processes in optical probing of GaInAs-type narrow band gap semiconductors
Author(s): Clifford R. Pollock; Brian J. Zook; David Cohen; Alphan Sennaroglu
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Energy relaxation of hot holes in GaAs grown on Si
Author(s): Kai Shum; Yoshihiro Takiguchi; Jihad M. Mohaidat; Feng Liu; Robert R. Alfano; Hadis Morkoc
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Simulation of ultrafast carrier relaxation processes in pulse/probe and dual pulse correlation probing of InGaAs-type narrow band gap semiconductors
Author(s): James E. Bair; J. Peter Krusius
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Physical modeling of ultrafast electrical waveform generation and characterization
Author(s): Kevin M. Connolly; Robert O. Grondin; Ravindra P. Joshi; Samir M. El-Ghazaly
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CO2-laser-driven avalanche ionization in InSb at liquid He temperatures
Author(s): Michael P. Hasselbeck
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Theoretical studies of very high frequency quantum transport in nanostructures
Author(s): Yaotian Fu
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