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Proceedings of SPIE Volume 1186

Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Editor(s): Leonard J. Brillson; Fred H. Pollak
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Volume Details

Volume Number: 1186
Date Published: 5 February 1990
Softcover: 22 papers (207) pages
ISBN: 9780819402226

Table of Contents
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In situ Characterization Of MBE Grown Surfaces And Interfaces By Grazing Incidence X-Ray Diffraction
Author(s): R. Pinchaux; M. Sauvage-Simkin; J. Massies; N. Jedrecy; N. Greiser; V. H. Etgens
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Process Development And Control Using Total Reflection X-Ray Fluorescence (TXRF) For Surface Analysis
Author(s): R. S. Hockett
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High Precision Measurement Of Phosphorus In Thin Glass Films Using X-Ray Fluorescence
Author(s): Michael C. Madden; J. Neal Cox
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IN-SITU Monitoring Of OMVPE Of GaAs And Ga1-xAlxAs (x = 0.17) By Contactless Photoreflectance
Author(s): H. Shen; Z. Hang; Fred H. Pollak; K. Capuder; Peter E. Norris
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Damage At Reactive Ion Etched MBE Regrown GaAs Interface
Author(s): J. Rossabi; M. Dutta; M. W. Cole; Doran D. Smith
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Investigation Of Photoablation As A Patterning Technique For Silicon Based Integrated Circuits: Laser Ablation And Physical Damage Threshold Considerations
Author(s): D. L. Singleton; G. Paraskevopoulos; A. D. Buckthought; R. S. Irwin; G. S. Jolly; I.T. Ali Emesh
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Vision Based Instrumentation For Microelectronic Materials Processing
Author(s): Don W. Lake
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IN-SITU Diagnostics For Deposition And Processing Of High Tc Superconducting Thin Films
Author(s): T. Venkatesan
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Development Of A Real Time Monitor For Superconductive Thin Film Preparation
Author(s): C. H. Chen
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Application of the Raman Microprobe Mole to the Characterization of Microelectronic Materials and the Analysis of Manufacturing Defects
Author(s): Fran Adar
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Reflectance-difference spectroscopy of GaAs crystal growth by OMCVD
Author(s): E. Colas; D. E. Aspnes; R. Bhat; A. A. Studna; M. A. Koza; V. G. Keramidas
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IN SITU Analysis Of The Growth Of Semiconductor Materials By Phase Modulated Ellipsometry From UV To IR
Author(s): B. Drevillon
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Photoreflectance Study Of Strain At Si/SiO2 Interfaces Prepared By Thermal Oxidation Of Silicon
Author(s): X. Yin; Fred H. Pollak; J. T. Fitch; C. H. Bjorkman; G. Lucovsky
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Photoelectrochemically Induced Copper Deposition On P-Silicon Electrodes From CuCN Solutions
Author(s): N. T. Silva; G. P. Thim; A. W. Mol; V. Baranauskas
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Analysis of nonlinear optical phenomena: perspective of in-situ monitoring method of the semiconductor-film crystal-structure
Author(s): Valery V. Balaniuk; Victor F. Krasnov; Nikolai A. Kul'chitzkii; Semion L. Musher; Vasily I. Proc'; Alexander M. Rubenchik; Vladimir E. Ryabchenko; Mikhail F. Stupak; Sergey G. Strutz; Vladimir T. Khryapov
Observations Of Epitaxial Growth Using Scanning Tunneling Microscopy
Author(s): D. K. Biegelsen; R. D. Bringans; L. E. Swartz
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In-situ Characterization Of Impurities And Defects At Si Interfaces
Author(s): M. Liehr
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Investigation By Transmission Electron Microscopy Of The Al-SiO2 Thin-Film Reaction Induced By in-situ Rapid Thermal Processing
Author(s): V. Baranauskas
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In-situ Observation On Electron Beam Induced Chemical Vapor Deposition By Transmission Electron Microscopy
Author(s): Toshinari Ichihashi; Shinji Matsui
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Investigation of Copper / Polyimide Interfacial Reactions
Author(s): Rao M. Nagaraj an; Victor A. Wells
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Three-Dimensional Characterization of LiNbO3 Waveguides By Secondary Ion Mass Spectrometry (SIMS) Image Depth Profiling
Author(s): Steven W. Novak; Hilda Kanber; Stephan Bar; Champa Sridhar; Robert Wilson
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Study of Titanium Diffusion in Lithium Niobate by Secondary Ion Mass Spectrometry (SIMS) Three Dimensional Profiling
Author(s): Stephan Bar; Hilda Kanber; Martin Lee; Robert Buckley
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Analysis Of Nonlinear Optical Phenomena: Perspective Of in situ Monitoring Method Of The Semiconductor-Film Crystal-Structure
Author(s): V. Balaniuk; V. Krasnov; N. Kul'chitzkii; S. Musher; V. Proc'; A. Rubenchik; V. Ryabchenko; M. Stupak; S. Strutz; V. Khryapov
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