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Proceedings of SPIE Volume 1144

1st Intl Conf on Indium Phosphide and Related Materials for Advanced Electronic and Optical Devices
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Volume Details

Volume Number: 1144
Date Published: 28 November 1989
Softcover: 78 papers (660) pages
ISBN: 9780819401809

Table of Contents
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Indium Phosphide - Into The Future
Author(s): Henry W. Brandhorst
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Growth Of Low-Dislocation-Density InP Single Crystals By The VCZ Method
Author(s): M. Tatsumi; T. Kawase; T. Araki; N. Yamabayashi; T. Iwasaki; Y. Miura; S. Murai; K. Tada; S. Akai
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Recent Developments In Gas Source Molecular Beam Epitaxy
Author(s): M. B. Panish
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Improved MBE Growth Of InGaAs-InAlAs Heterostructures For High-Performance Device Applications
Author(s): Y. C. Kao; A. C. Seabaugh; H. Y. Liu; T. S. Kim; M. A. Reed; P. Saunier; B. Bayraktaroglu; W. M. Duncan
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Incorporation Of Residual Donor Impurities In High Purity Epitaxial Indium Phosphide
Author(s): B. Lee; M. H. Kim.; M. J. McCollum; G. E. Stillman
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Definitive Identification Of The Fe3+/Fe2+ Level In Ga0.47In0.53As Layers
Author(s): G. Guillot; T. Benyattou; F. Ducroquet; B. Wirth; M. Colombet; A. Louati; A. Bencherifa
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InP Based Ternary And Quaternary Thin Film Structures On Large Areas Grown By LP � Movpe
Author(s): D. Schmitz; G. Strauch,; H. Jurgensen; M. Heyen; P. Harde
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Deep Levels In InP By DLTS and TSCAP: Survey And Recent Data
Author(s): A. Singh; W. A. Anderson; Y. S. Lee; K. Jiao
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Lattice Mismatched Heteroepitaxial Growth Of GaAs On InP bY Organometallic Vapor Phase Epitaxy.
Author(s): U. K. Chakrabarti; W. S. Hobson; V. Swaminathan; S. J. Pearton; S. Nakahara; M. Lamont Schnoes; P. M. Thomas
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Spatially Resolved Photoluminescence Characterization Of Fe Doped Semi-Insulating lnP
Author(s): M. Erman; G. Gillardin; J. Le Bris; M. Renaud; E. Tomzig
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Comparison Of The Growth Of InP And InAs By Atomic Layer Epitaxy
Author(s): Weon G. Jeong; E. P. Menu; P. D. Dapkus
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Altering The Composition Of GaInPAs Grown By The Hydride Technique By Introducing HC1 Downstream
Author(s): K. A. Jones; V. S. Ban; G. H. Olsen; C. H. Park
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Flow-Rate Modulation Epitaxy Of InP By Metalorganic Chemical Vapor Deposition
Author(s): W. K. Chen; J. C. Chen; J. F. Chen; C. R. Wie; P. L. Liu; D. M. Hwang
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Characterization Of InP On Si Grown By MBE
Author(s): H. Y. Lee; T. E. Crumbaker; M. J. Hafich; G. Y. Robinson; M. M. Al-Jassim; K. M. Jones
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Electron-Hole Scattering And Minority-Electron Transport In In0.53Ga0.47As, InAs, And. InP: The Role Of The Split-Off Band
Author(s): K. Sadra; C. M. Maziar; B. G. Streetman
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Growth Of InGaAsP Films In A Multi-Wafer High-Speed Rotating Disk Reactor By MOCVD
Author(s): Mark McKee; Paul Reinert; Peter E. Norris; Richard A. Stall
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Room-Temperature Photoreflectance Spectra Of Thin-Layer (<200A) InP Doping Superlattices
Author(s): P. Y. Hsieh; Z. Shi; J. C. Chen; P. L. Liu
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Pumping Requirements And Options For Molecular Beam Epitaxy And Gas Source Molecular Beam Epitaxy/Chemical Beam Epitaxy
Author(s): M. J. McCollum; M. A. Plano; M. A. Haase; V. M. Robbins; S. L. Jackson; K. Y. Cheng; G. E. Stillman
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High Quality InP Substrates For Advanced Electronic And Optical Devices
Author(s): T. I. Ejim; F. Simchock; E. M. Monberg
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Control Of Insulator-Semiconductor Interfaces Of InP And InGaAs For Surface Passivation And Misfet Fabrication
Author(s): Hideki Hasegawa
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High Performance Ion Implanted InP Misfets Passivated With An Anodic Oxide'
Author(s): A. Falcou; G. Post; P. Viktorovitch; R. Blanchet; K. Choujaa; G. Hollinger; Y. Robach; J . Joseph
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Surface Passivation And Barrier Height Enhancement Of N-type In0.53Ga0.47As Schottky Barrier Photodiodes
Author(s): D. H. Lee; Sheng S. Li
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Evidence Of A Surface Trap By DLTS Measurements On GalnAs Planar PIN Photodiodes
Author(s): F. Ducroquet; G. Guillot; J. C. Renaud; A. Nouailhat
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InP/Low-Temperature-Deposited SiO2 Interface
Author(s): P. D. Gardner; S. Y. Narayan
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Low Temperature Dielectrics And Surface Passivation Of InP
Author(s): R. Iyer; Z. Zou; C. W. Wilmsen; D. L. Lile
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Chemical Nature Of Encapsulant-Semiconductor Interface After Rapid Thermal Annealing For InP MISFETs
Author(s): M. D. Biedenbender; V. J. Kapoor
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Interface Properties Of High Barrier Height MIS Diodes On InP
Author(s): Y. S. Lee; W. A. Anderson
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Hydrogenation Of InP Surface By Phosphorus-Added Hydrogen Plasma
Author(s): Takashi Sugino; Aniroot Boonyasirikool; Hiroshi Hashimoto; Junji Shirafuji
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MIS Structures On InP Using Oxide Deposited Near 100°C
Author(s): K. Vaccaro; B. R. Bennett; J. P. Lorenzo; A. Davis; H. G. Lipson
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Electrical Properties Of InxPNy-InP MIS Structures
Author(s): Y. Iwase; F. Arai; T. Sugano
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Characterization Of InP Surfaces Using Integral Photoluminescence Measurements
Author(s): H. J. Frenck; W. Kulisch; R. Kassing
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Down Stream Pecvd Deposition Of Silicon Dioxide Films On InP With Improved Interface Properties
Author(s): W. Kulisch; R. Kassing
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The Passivation Of InP By In (PO3)3 Condensed Phosphates For MISFET Applications
Author(s): J. Joseph; Y. Robach; G. Hollinger; P. Ferret; M. Pitaval
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High Pressure Oxidation Studies Of InP And GaAs
Author(s): U. K. Chakrabarti; G. P. Schwartz; R. A. Laudise; A. J. Caporaso
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Passivation Of InP Using A Surface Science Approach : THE Al2O3/As//InP CASE
Author(s): M. Gendry; R. Blanchet; G. Hollinger; C. Santinelli; R. Skheyta; P. Viktorovitch
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The Sulfur Passivation Of InP And GaAs Surfaces
Author(s): K. M. Geib; J. Shin; C. W. Wilmsen
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Technology And Drift Characteristics Of UVCVD-SiO2 / InP MISFET Devices
Author(s): P. Dimitriou; A. Falcou; P. Krauz; G. Post; A. Scavennec
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A New Fabrication Approach For Planar, Ion-Implanted InP JFETs
Author(s): J. B. Boos; W. Kruppa; B. Molnar
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Annealing Conditions For Fe Doped Semi-Insulating InP
Author(s): K. Kainosho; H. Shimakura; H. Yamamoto; T. Inoue; O. Oda
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Pt/Ti Low Resistance Non-Alloyed Ohmic Contacts To Inp-Based Photonic Devices
Author(s): A. Katz; S. N. G. Chu; P. M. Thomas; W. C. Dautremont-Smith
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Rapid Thermal Annealing Of S-Implanted Sent-Insulating InP
Author(s): Parimala Karighattam; D. A. Thompson
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A Study Of Enhanced Barrier Height Gates For n-InP MESFET's
Author(s): A. A. Iliadis; W. Lee; O. A. Aina
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Barrier Ohmic Contacts To Indium Gallium Arsenide
Author(s): P. J. T. Mellor; J. Herniman
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A Monolithically Inletrated Receiver Front-End Comprista& Ion-Implanted Lateral Interdigitated IngaAs Pin And Inp Jfet Devices
Author(s): W. S. Lee; S. A. Kitching; S. W. Bland
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Nickel In Ohmic Contacts To Indium Phosphide
Author(s): M. F.J. O'Keefe; R. E. Miles; M. J. Howes
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Pseudomorphic GaInP Schottky Diode On InP
Author(s): S. Loualiche; A. Ginudi; D. Le Corre; A. Lecrosnier
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Monolithically Integrated Ga0.47In0.53As MISFET Inverters
Author(s): M. Renaud; P. Boher; J. Schneider; E. Boucherez; Y. Hily; D. Schmitz; H. Jurgensen
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An InP-InGaAs Light Amplifying Optical Switch
Author(s): S. A. Feld; C. W. Wilmsen; M. Hafich; J. Quigley; G. Y. Robinson
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Wide-Wavelength InQaAs/InP PIN Photodiodes Sensitive From 0.7 To 1.55 um
Author(s): S. Kagawa; K. Inoue; I Ogawa; Y. Takada; T. Shibata
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InP/InGaAs Based Charge-Coupled Devices For MQW Spatial Light Modulator Applications
Author(s): K. Y. Han; C. W. Chen; J. H. Quigley; M. Hafich; G. Y. Robinson; R. Chang; D. L. Lile
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1.3 µm InGaAsP/InP Flat-Surface Buried Heterostructure Laser Diode Fabricated On P-Type Substrate
Author(s): I. Ushijima; S. Osaka; A. Fukushima; T. Ohizumi; S. Nakai; K. Kihara; S. Isozumi; T. Shibata
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Sensitivity Of Optoelectronic Receivers
Author(s): C. R. Zeisse
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The Origin And Effects Of Carrier Leakage In GaInAsP/InP Lasers
Author(s): K. D. Chik; B. A. Richardson
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New LED In Synthesized InP Yb Material
Author(s): H. L'Haridon; D. Moutonnet; Y. Toudic; M. Salvi; P. N. Favennec
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Progress In Indium Phosphide Solar Cell Research
Author(s): I. Weinberg; D. J. Brinker; C. K. Swartz; R. E. Hart
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Epitaxial InP And Related III-V Compounds Applied To Solar Cells
Author(s): M. W. Wanlass; G. S. Horner; T. A. Gessert; T. J. Coutts; I. Weinberg
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Indium Phosphide Solar Cells Made By Closed-Ampoule Diffusion Of Sulphur Into Cadmium-Doped Inp Substrates: Dependence Of Cell Characteristics On Diffusion Temperature And Time
Author(s): Mircea Faur; Maria Faur; Chandra Goradia; Manju Goradia; Navid Fat emi; David Brinker; Ralph Thomas
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A Review Of ITO/InP Solar Cells
Author(s): T. J. Coutts; X. Li; T. A. Gessert; M. W. Wanlass
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Aspects Of Processing Indium Tin Oxide/Inp Solar Cells
Author(s): T. A. Gessert; X. Li; T. J. Coutts; M. W. Wanlass; A. B. Franz
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Inp Solar Cells On Silicon Substrates
Author(s): C. J. Keavney; S. M. Vernon; V. E. Haven; M. M. Al-Jassim
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XPS, Auger And SEM Analysis Of The InP Surface After Closed-Ampoule Diffusion With Sulphur At Several Diffusion Temperatures
Author(s): Maria Faur; Mircea Faur; Manju Ghalla; Chandra Goradia; Douglas Jayne; Frank Honecy; Irving Weinberg
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MBE Grown A1GaAs/InP Mis System And Its Hetero-Mis Gate InP Fet's
Author(s): T. I toh; K. Asano; K. Kasahara; T. Ozawa; Y. Ando; K. Ohata
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GaInAs Misfet Wideband Microwave Power Amplifiers
Author(s): D. Bechtle; L. C. Upadhyayula; P. D. Gardner; S. Y. Narayan
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"Basics And Recent Applications Of High Efficiency Millimeter Wave Inp Gunn Diodes"
Author(s): Berin Fank; Jim Crowley; Dominic Tringali; Lothar Wandinger
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InP Devices For Millimeter-Wave Monolithic Circuits
Author(s): S. C. Binari; R. E. Neidert; H. B. Dietrich
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LP-MOCVD InP Gunn Diodes Developped For 94 Gift Millimeter Range Operation
Author(s): M. A. di Forte-Poisson; C. Brylinski; N. Proust; D. Pons; M. Secoue; P. Arsene Henry; M. Calligaro; J. Lacombe
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Silicon-Implanted Thermally-Annealed N-InP Layers For Microwave Power MISFETs
Author(s): S. G. Liu; P. D. Gardner; S. Y. Narayan; J. B. Klatskin; S. D. Colvin
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High Dynamic Range GaInAs MISFET Mixers
Author(s): K. W. Chang; E. J. Denlinger; P. D. Gardner
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Indium Phosphide-Based Heterojunction Bipolar Transistors.
Author(s): Jean-Luc Pelouard; Michael A. Littlejohn
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Physics Of InP/InGaAs Heterostructure Bipolar Transistors For EHF Applications
Author(s): M. Meyyappan; M. A. Osman; G. A. Andrews; J. P. Kreskovsky; H. L. Grubin
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Monte Carlo Simulation Of A Submicron Pseudomorphic GaA1As/InGaAs/GaAs HEMT
Author(s): Duke H. Park; Kevin F. Brennan
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Magnetoconductance Oscillations In InGaAs/GaAs Lateral Surface Superlattices
Author(s): J. Ma; R. A. Puechner; W.P. Liu; R. Mezenner; A. M. Kriman; G. N. Maracas; D. K. Ferry; P. Chu; H. H. Wieder
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Monte Carlo Investigation Of Minority Electron Transport In InP
Author(s): M. A. Osman; H. L. Grubin
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Radiation Effects On InP-Based Electrical & Optical Devices
Author(s): K. N. Vu; J. Y. Yaung
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InP JFET Equivalent Circuit And Negative Resistance Effects
Author(s): W. Kruppa; J. B. Boos
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