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PROCEEDINGS VOLUME 1106

Future Infrared Detector Materials
Editor(s): Jan W. Baars; Randolph E. Longshore
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Volume Details

Volume Number: 1106
Date Published: 12 September 1989
Softcover: 21 papers (221) pages
ISBN: 9780819401427

Table of Contents
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New Techniques For The Growth Of HgCdTe By Molecular Beam Epitaxy
Author(s): C. J. Summers; R. G. Benz; B. K. Wagner; J. D. Benson; D. Rajavel
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The Scope Of MOVPE For Advanced IR CMT Detectors
Author(s): J. B. Mullin; S. J.C. Irvine; J. Giess; J. S. Gough; A. Royle; M. C.L. Ward; G. Crimes
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Organometallic Vapor Phase Epitaxial Growth Of HgTe And HgCdTe Using Methylallyltelluride
Author(s): Ishwara B. Bhat; Hassan Ehsani; Sorab K. Ghandhi
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(Hg,Zn)Te Among The Other Materials For IR Detection
Author(s): R. Triboulet; M. Bourdillot; A. Durand; T. Duy Nguyen
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Growth Of CdTe Crystals By The Heat Exchanger Method (HEMN)
Author(s): C. P. Khattak; F. Schmid
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Recent Progress In Lattice Matched Substrates For HgCdTe EPITAXY
Author(s): Carl J. Johnson
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High Mobility LPE HgCdTe By Post Growth Indium Doping
Author(s): P. Koppel; K. E. Owens; R. E. Longshore
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Diffusion In Cadmium Mercury Telluride
Author(s): Helen D. Palfrey
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Spectroscopic Techniques For The Analysis Of CdTe Substrates Used For The Growth Of HgCdTe
Author(s): Donald E. Cooper; J. Bajaj; Robert C. Bowman
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Characterization Of MOCVD Films
Author(s): W. H. Wright; P. L. Anderson; P. K. Liao; A. J. Syllaios
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The Role Of n+-Accumulation Layers On The Carrier Lifetime Of n-Hg1-xCdxTe
Author(s): G. Mahr von Staszewski; R. Wollrab
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Equilibrium Barrier Formation In p-on-N And P-on-n Graded HgCdTe Heterojunctions
Author(s): Frank L. Madarasz; Frank Szmulowicz
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On Speeding-Up Pyroelectric Detectors
Author(s): P. Marquardt; G. Ntimtz; G. Galeczki
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High Tc Superconductor Infrared Detectors
Author(s): W. Biter; A. Rothwarf; K. Scoles
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Room-Temperature Detectors For 800-2600 nm Based On InGaAsP Alloys
Author(s): V. S. Ban; G. Erickson; S. Mason; K. Woodruff; G. Gasparian; G. H. Olsen
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The MBE Growth And Electronic Structure Of a-SnxGe1-x Alloys
Author(s): Hartmut Hochst; Michael A. Engelhardt; David W. Niles
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Planar Heterojunctions Made On MBE Grown Mercury Cadmium Telluride Using Low Energy Ion Sputtering
Author(s): S. S. Yoo; M. Boukerche; M. DeSouza; J. P. Faurie
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Angle-Resolved X-Ray Photoelectron Spectroscopy As A Noninvasive Characterization Technique For The Surface Region Of Processed (Hg, Cd)Te
Author(s): M. Seelmann-Eggebert; H. J. Richter; J. Ziegler
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Far Infrared Analysis Of The HgTe-CdTe Superlattice
Author(s): S. Perkowitz; L. S. Kim; O. K. Wu; J. N. Schulman
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Interface Properties Of Various Passivations Of HgCdTe
Author(s): S. E. Schacham; E. Finkman
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Experimental And Theoretical Analysis Of The Contribution Of The Graded Region To The Current And RoA Of HgCdTe Diodes
Author(s): S. E. Schacham; E. Finkman
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