Share Email Print
cover

PROCEEDINGS VOLUME 10918 • new

Gallium Nitride Materials and Devices XIV
For the purchase of this volume in printed format, please visit Proceedings.com

Volume Details

Volume Number: 10918
Estimated Publication Date: 7 March 2019

Table of Contents
show all abstracts | hide all abstracts
Growth and optical properties of wurtzite AlBGaN thin films (Conference Presentation)
Author(s): Ferdinand Scholz; Oliver Rettig; Jan-Patrick Scholz; Natja Steiger; Sebastian Bauer; Yueliang Li; Haoyuan Qi; Johannes Biskupek; Ute Kaiser; Klaus Thonke
Show Abstract
Sapphire nanomembrane technology for high-efficiency micro-LED displays (Conference Presentation)
Author(s): Euijoon Yoon
Show Abstract
Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation)
Author(s): Michal Bockowski; Izabella Grzegory; Tomasz Sochacki; Boleslaw Lucznik; Michal Fijalkowski; Mikolaj Amilusik; Malgorzata Iwinska; Aneta Sidor; Elzbieta Litwin-Staszewska; Ryszard Piotrzkowski; Marcin Zajac
Show Abstract
Implantation of beryllium into thin unintentionally doped layers of gallium nitride crystallized by halide vapor phase epitaxy (Conference Presentation)
Author(s): Michal Bockowski; Michal Fijalkowski; Tomasz Sochacki; Mikolaj Amilusik; Boleslaw Lucznik; Malgorzata Iwinska; Aneta Sidor; Grzegorz Kamler; Marek Oklej; Rafal Jakiela; Adam Barcz
Show Abstract
Enhanced optical and structural properties of MBE-grown AlGaN nanowires on Si substrate by H-ion implantation and UV ozone treatment
Author(s): Raman Kumar; Ravinder Kumar; Debiprasad Panda; Mahitosh Biswas; Sourabh Upadhyay; Debabrata Das; Songrui Zhao; Zetian Mi; Subhananda Chakrabarti
Show Abstract
Growth of GaN nanowire on indium-tin-oxide coated fused silica for simultaneous transparency and conductivity (Conference Presentation)
Author(s): Aditya Prabaswara; Jung-Wook Min; Malleswara R. Tangi; Ram Chandra Subedi; Davide Priante; Tien Khee Ng; Boon S. Ooi
Show Abstract
High-Q gallium nitride photonic crystal cavities on silicon (Conference Presentation)
Author(s): Nicolas Grandjean
Show Abstract
III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors
Author(s): Jialin Wang; Chuan-Wei Tsou; Hoon Jeong; Young-Jae Park; Theeradetch Detchprohm; Karan Mehta; P. Douglas Yoder; Russell D. Dupuis; Shyh-Chiang Shen
Show Abstract
Fabrication of GaN monolithic doubly-resonant microcavity SHG device on Si trapezoidal structure (Conference Presentation)
Author(s): Tomoaki Nambu; Tenta Komatsu; Keishi Shiomi; Yasufumi Fujiwara; Masahiro Uemukai; Ryuji Katayama
Show Abstract
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Author(s): Akhil R. K. Kalapala; Dong Liu; Sang June Cho; Jeongpil Park; Deyin Zhao; Rafael Dalmau; John D. Albrecht; Baxter Moody; Zhenqiang Ma; Weidong Zhou
Show Abstract
GaN waveguide directional coupler for optical quantum information processing systems (Conference Presentation)
Author(s): Junya Miwa; Masafumi Kihira; Keishi Shiomi; Yasufumi Fujiwara; Masahiro Uemukai; Ryuji Katayama
Show Abstract
Probing the homogeneity of an In-rich InGaN layer by nanoscale cathodoluminescence (Conference Presentation)
Author(s): Bowen Sheng; Xiantong Zheng; Gordon Schmidt; Peter Veit; Ping Wang; Frank Bertram; Zhaoying Chen; Jürgen Christen; Bo Shen; Xinqiang Wang
Show Abstract
Green InGaN/GaN based LEDs: high luminance and blue shift
Author(s): Anis Daami; François Olivier; Ludovic Dupré; Christophe Licitra; Franck Henry; François Templier; Stéphanie Le Calvez
Show Abstract
Investigation of the device degradation for commercial light-emitting diodes (LEDs) using spatially and time-resolved electro- and photoluminescence
Author(s): Nassim Rahimi; Alain Price; Xinhua Pan; Askari Ghasempour; Francis Ndi
Show Abstract
Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO2 microsphere array
Author(s): Cheng Liu; Bryan Melanson; Yu Kee Ooi; Matthew Hartensveld; Jing Zhang
Show Abstract
Optimized design, growth, and operation of frequency-stabilised GaN laser diodes and GaN tapered amplifiers at 461 nm (Conference Presentation)
Author(s): John Macarthur; Ludwig Prade; Christopher Carson; Caspar C. Clark; John Sharp; Yeshpal Singh; Kai Bongs; Steve Najda; P. Perlin; T. Suski; L. Marona; S. Stanczyk; P. Wisniewski; S. Grzanka; D. Schiavon; M. Leszczynski; Loyd McKnight
Show Abstract
Structural investigation of InGaN/GaN heterostructures and quantum wells for long wavelength emission (Conference Presentation)
Author(s): Pierre Ruterana
Show Abstract
Electron beam induced current investigation of Ga(In)N nanowires (Conference Presentation)
Author(s): Omar Saket; Fabien Bayle; François Julien; Martina Morassi; Nuno Amador; Jean-Christophe Harmand; Noelle Gogneau; Maria Tchernycheva
Show Abstract
Recent progress of Mg-ion implantation and thermal activation process for p-doping in GaN (Conference Presentation)
Author(s): Hideki Sakurai; Masato Omori; Shinji Yamada; Yukihiro Furukawa; Hideo Suzuki; Tetsuo Narita; Keita Kataoka; Michal Bockowski; Jun Suda; Tetsu Kachi
Show Abstract
Magnesium implant-activation in GaN: Impact of high-temperature annealing techniques on the state of implant induced defects and Mg activation (Conference Presentation)
Author(s): Kasey Hogan; Sean Tozier; Milena Graziano; Michael Derenge; Michael Shevelev; Vlad Sklyar; Andrew C. Lang; Kenneth Jones; Mitra L. Taheri; Woongje Sung; F. Shadi Shahedipour-Sandvik
Show Abstract
Enhanced p-type conductivity in N-polar GaN photocathode structures and correlation with GaN hillock density (Conference Presentation)
Author(s): Emma Rocco; Isra Mahaboob; Kasey Hogan; Sean Tozier; Vincent Meyers; Ben McEwen; Steven Novak; Baishakhi Mazumder; L. D. Bell; F. Shadi Shahedipour-Sandvik
Show Abstract
New physics in GaN resonant tunneling diodes
Author(s): Huili Grace Xing; Jimy Encomendero; Debdeep Jena
Show Abstract
Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area
Author(s): Mi-Hee Ji; Hoon Jeong; Marzieh Bakhtiary-Noodeh; Shyh-Chiang Shen; Theeradetch Detchprohm; Ashok K. Sood; P. Parminder Ghuman; Sachidananda Babu; Nibir K. Dhar; Jay Lewis; Russell D. Dupuis
Show Abstract
Vertical GaN power devices: current status and future prospects (Conference Presentation)
Author(s): Tetsu Kachi
Show Abstract
Vertical power devices enabled by bulk GaN substrates
Author(s): Travis J. Anderson; Jennifer K. Hite; Andrew D. Koehler; Lunet E. Luna; James C. Gallagher; Alan G. Jacobs; Boris N. Feigelson; Karl D. Hobart; Francis J. Kub
Show Abstract
Degradation physics of GaN-based lateral and vertical devices
Author(s): Matteo Meneghini; Carlo De Santi; Alessandro Barbato; Matteo Borga; Eleonora Canato; Francesca Chiocchetta; Elena Fabris; Fabrizio Masin; Arianna Nardo; Fabiana Rampazzo; Maria Ruzzarin; Alaleh Tajalli; Marco Barbato; Gaudenzio Meneghesso; Enrico Zanoni
Show Abstract
Fabrication and characterization of high-voltage AlGaN/GaN HEMTs on silicon substrates (Conference Presentation)
Author(s): Anna Szerling; Marek Ekielski; Maciej Kozubal; Karolina Pagowska; Andrzej Taube; Marek Guziewicz; Maciej Kaminski; Kamil Kosiel; Krystyna Golaszewska-Malec; Renata Kruszka; Iwona Sankowska; Anna Piotrowska; Joanna Zdunek; Boguslawa Adamczyk-Cieślak
Show Abstract
Simple ohmic contact formation in HEMT structures: application to AlGaN/GaN
Author(s): Clarissa D. Vazquez-Colon; David C. Look; Eric Heller; John S. Cetnar; Arturo A. Ayon
Show Abstract
Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates
Author(s): Melisa Ekin Gulseren; Berkay Bozok; Gokhan Kurt; Omer Ahmet Kayal; Mustafa Ozturk; Sertac Ural; Bayram Butun; Ekmel Ozbay
Show Abstract
Electrical and structural characteristics of aged RF GaN HEMTs and irradiated high-power GaN HEMTs with protons and heavy ions
Author(s): Yongkun Sin; Dmitry Veksler; Jeremy Bonsall; Scott Sitzman; Miles Brodie; Zachary Lingley; Brendan Foran
Show Abstract
High-efficiency blue and green laser diodes for laser displays
Author(s): Yoshitaka Nakatsu; Yoji Nagao; Kazuma Kozuru; Tsuyoshi Hirao; Eiichiro Okahisa; Shingo Masui; Tomoya Yanamoto; Shin-ichi Nagahama
Show Abstract
Influence of sandwiched GaN/AlGaN/GaN lower quantum barrier on crystallinity and luminescence of an asymmetric GaN-based high-power laser diode
Author(s): Tian Lan; Guangzheng Zhou; Congcong Wang; Ying Li; Rui Huang; Anru Yan; Zhiyong Wang
Show Abstract
Room temperature continuous wave lasing of GaN-based green vertical-cavity surface-emitting lasers
Author(s): Y. Mei; R. B. Xu; L. Y. Ying; J. P. Liu; Z. W. Zheng; H. Long; B. P. Zhang
Show Abstract
Recent progress in GaN-based vertical-cavity surface-emitting lasers with lateral optical confinement due to an incorporated curved mirror
Author(s): Hiroshi Nakajima; Tatsushi Hamaguchi; Masayuki Tanaka; Masamichi Ito; Tatsuro Jyokawa; Tatsuya Mato; Kentaro Hayashi; Maho Ohara; Noriko Kobayashi; Hideki Watanabe; Rintaro Koda; Katsunori Yanashima
Show Abstract
Influence of Al ion implantation on electrical and optical properties in nitride TJ VCSEL
Author(s): P. Śpiewak; M. Wasiak; R. P. Sarzała
Show Abstract
Development of nanopore-based near ultraviolet vertical-cavity surface emitting lasers
Author(s): Cheng Zhang; Rami T. Elafandy; Jerry Zhang; Songtao Chen; Arto Nurmikko; Jung Han
Show Abstract
Gallium nitride micro-LED displays (Conference Presentation)
Author(s): Martin D. Dawson
Show Abstract
GaN monolithic integration for lighting and display
Author(s): H. W. Choi; W. Y. Fu; K. H. Li; Y. F. Cheung
Show Abstract
Advanced solutions for high-performance GaN MicroLED displays
Author(s): François Templier; Jeannet Bernard; Stéphane Caplet; Alexis Bédoin; Helge Haas
Show Abstract
Growth of monolithic full-color light-emitting diode and its applications
Author(s): J. C. Chen; Milton Yeh; Hussein S. El-Ghoroury; Yoshitake Nakajima
Show Abstract
Investigation of Mg and Si doping at different temperature for multi-color micro-LEDs with tunnel junctions (Conference Presentation)
Author(s): Yoann Robin; Quentin Bournet; Markus Pristovsek; Yamina Andre; Hiroshi Amano
Show Abstract
LEE enhancement in AlGaN UVC LED using photonic crystal reflector fabricated on p-GaN contact layer (Conference Presentation)
Author(s): Hideki Hirayama; Yukio Kashima; Yasuhiro Watanabe; Tomohiko Shibata; Noritoshi Maeda; Masafumi Jo; Eriko Matsuura; Takeshi Iwai; Mitsunori Kokubo; Takaharu Tashiro; Kanji Furuta; Ryuichiro Kamimura; Tamato Osada; Hideki Takagi; Yuuichi Kurashima; Yasushi Iwaisako; Tsugumu Nagano
Show Abstract
Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer
Author(s): Abdullah A. Alhamoud; Nasir Alfaraj; Davide Priante; Bilal Janjua; Abdullah A. Alatawi; Abdulrahman M. Albadri; Ahmed Y. Alyamani; Tien Khee Ng; Boon S. Ooi
Show Abstract
Improvement of light extraction in AlGaN-based deep ultraviolet light-emitting diodes (Conference Presentation)
Author(s): Shiou Yi Kuo; Tien-Chang Lu
Show Abstract
White LED in combination with bulk and porous fluorescent SiC (Conference Presentation)
Author(s): Satoshi Kamiyama; Atsushi Suzuki; Weifang Lu; Motoaki Iwaya; Tetsuya Takeuchi; Isamu Akasaki
Show Abstract
High-speed underwater communication with GaN blue LDs (Conference Presentation)
Author(s): Gong-Ru Lin; Chih-Hsien Cheng; Yu-Fang Huang; Tsai-Chen Wu
Show Abstract
Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111)
Author(s): Richard Liu; Callan McCormick; Can Bayram
Show Abstract

© SPIE. Terms of Use
Back to Top