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PROCEEDINGS VOLUME 10807 • new

Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology
Editor(s): Kiwamu Takehisa

Volume Details

Volume Number: 10807
Date Published: 2 August 2018
: 21 papers (152) pages
ISBN: 9781510622012

Table of Contents
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Front Matter: Volume 10807
Author(s): Proceedings of SPIE
Progress in nanoimprint wafer and mask systems for high volume semiconductor manufacturing
Author(s): Naoki Murasato; Tsuyoshi Arai
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Improved particle control for high volume semiconductor manufacturing for nanoimprint lithography
Author(s): Tsuyoshi Arai; Yoichi Matsuoka; Hisanobu Azuma
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Shin-Etsu super-high-flat substrate for FPD panel photomask
Author(s): Youkou Ishitsuka; Daijitsu Harada; Atsushi Watabe; Masaki Takeuchi
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New half-tone lithography uses for FPD proximity printing
Author(s): Shuhei Kobayashi; Koichiro Yoshida; Masayuki Miyoshi; Yutaka Yoshikawa
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Multi-beam mask writer MBM-1000
Author(s): Hiroshi Matsumoto; Hideo Inoue; Hiroshi Yamashita; Takao Tamura; Kenji Ohtoshi
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Dry etching technologies for Cr film
Author(s): Kei Hattori; Takashi Miyamoto; Yoshinori Iino; Shunpei Kodama; Yoshie Okamoto; Kazuki Nakazawa; Makoto Karyu; Hideaki Terakado; Hiroki Shirahama; Hirotsugu Ita; Tomoaki Yoshimori; Hidehito Azumano; Makoto Muto; Mumenori Iwami
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Update on the performance of photomask repair and clean with DUV femtosecond laser processes
Author(s): Tod Robinson; Jeff LeClaire
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Demonstration of an effective mask proximity correction for advanced photomask
Author(s): Kenji Kono; Yasuo Kon; Yasunari Tsukino; Sergei Postnikov; Thiago Figueiro; Luc Martin; Paolo Petroni; Patrick Schiavone
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Novel thermoplastic SOC materials for planarization use in multilayer lithography process
Author(s): Keisuke Kawashima; Koji Inoue; Takashi Oda; Kazuo Kohmura
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eBeam initiative surveys report greatly increased confidence in EUV and mask process correction requirements
Author(s): Aki Fujimura; Jan Willis
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Minimizing "Tone Reversal" during 19x nm mask inspection
Author(s): Kazunori Seki; Karen Badger; Masashi Yonetani; Anka Birnstein; Jan Heumann; Takeshi Isogawa; Toshio Konishi; Yutaka Kodera
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EUV capping layer integrity
Author(s): Pavel Nesládek; Jonas Schmidt; Thorsten Krome
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Fabrication of Ta based absorber EUV mask with SRAF
Author(s): Keiko Morishita; Kosuke Takai; Kenji Masui; Takashi Kamo; Tsukasa Abe; Yasutaka Morikawa; Naoya Hayashi
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Blank defect coverage budget for 16nm half-pitch single EUV exposure
Author(s): Rik Jonckheere; Takeshi Yamane; Yasutaka Morikawa; Takashi Kamo
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Development of closed-type EUV pellicle
Author(s): Yosuke Ono; Kazuo Kohmura; Atsushi Okubo; Daiki Taneichi; Hisako Ishikawa; Tsuneaki Biyajima
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Advanced ceramic protective lifetime prolong for particle control
Author(s): Yuan Hsu; Yutaka Satou
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Intra-field mask-to-mask overlay, separating the mask writing from the dynamic pellicle contribution
Author(s): Richard van Haren; Steffen Steinert; Orion Mouraille; Koen D’havé; Leon van Dijk; Ronald Otten; Dirk Beyer
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Achieve high hotspot detection accuracy by pattern scoring
Author(s): Xiang Fang; Shou-Yuan Ma; Chien-Nan Lin; Hsu-Tang Liu; Chuan-Chun Lee; Chuen-Huei Yang; I-Y. Chang; Erwin Deng; Ming-Feng Shen; Min-Ying Lu; Ling-Chieh Lin; Hung-Yueh Liao; Elven Huang; Jonathan Muirhead
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Enabling accurate and cost-effective registration metrology on EUVL masks
Author(s): Runyuan Han; Hendrik Steigerwald; Frank Laske; Klaus-Dieter Roeth
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EUV mask with advanced hybrid black border suppressing EUV and DUV OOB light reflection
Author(s): Genta Watanabe; Norihito Fukugami; Toru Komizo; Yutaka Kodera; Toshio Konishi
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Exposure characteristics of ternary copolymerization positive tone electron beam resist containing p-chloro-α-methylstyrene
Author(s): Kenta Tamaru; Shunsuke Ochiai; Yukiko Kishimura; Hironori Asada; Ryoichi Hoshino; Minako Iwakuma
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