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Advanced Etch Technology for Nanopatterning VII
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Volume Details

Volume Number: 10589
Estimated Publication Date: 29 March 2018
Softcover: 0 papers () pages
ISBN: 9781510616707

Table of Contents
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3D memory: etch is the new litho
Author(s): Christopher Petti
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Selective dry etching of silicon containing anti-reflective coating
Author(s): Shyam Sridhar; Andrew Nolan; Li Wang; Erdinc Karakas; Sergey Voronin; Peter Biolsi; Alok Ranjan
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New frontiers of atomic layer etching
Author(s): Sonam D. Sherpa; Alok Ranjan
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Exploration of post-lithography smoothening methods applied to 16nm half-pitch EUV lines and spaces (Conference Presentation)
Author(s): Frederic Lazzarino; Ming Mao; Sara Paolillo; Suseendharan Sakthikumar; Danilo De Simone; Alain Moussa; Nadia Vandenbroeck; Daniele Piumi; Kathy Barla
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Graphoepitaxy integration and pattern transfer of lamellar silicon-containing high-chi block copolymers
Author(s): P. Bézard; X. Chevalier; A. Legrain; C. Navarro; C. Nicolet; G. Fleury; I. Cayrefourcq; R. Tiron; M. Zelsmann
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wafer edge overlay control solution for N7 and beyond
Author(s): Richard van Haren; Victor Calado; Leon van Dijk; Jan Hermans; Kaushik Kumar; Fumiko Yamashita
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Exploration of BEOL line-space patterning options at 12 nm half-pitch and below
Author(s): S. Decoster; F. Lazzarino; L. Petersen Barbosa Lima; W. Li; J. Versluijs; S. Halder; A. Mallik; G. Murdoch
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Advanced process and defect characterization methodology to support process development of advanced patterning structures
Author(s): Supriya Ketkar; Junhan Lee; Sen Asokamani; Winston Cho; Shailendra Mishra
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Thermal atomic layer etching using sequential, self-limiting surface reactions (Conference Presentation)
Author(s): Steven George
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A cellular automata simulation of atomic layer etching
Author(s): Jan Strotmann; Meghali Chopra; Roger T. Bonnecaze
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Isotropic atomic level etching of tungsten using formation and desorption of tungsten fluoride
Author(s): Kazunori Shinoda; Nobuya Miyoshi; Hiroyuki Kobayashi; Yuko Hanaoka; Kohei Kawamura; Masaru Izawa; Kenji Ishikawa; Masaru Hori
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Minimum reaction network necessary to describe Ar/CF4 plasma etch
Author(s): Sofia Helpert; Meghali Chopra; Roger T. Bonnecaze
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Ion-beam nanopatterning: experimental results with chemically-assisted beam
Author(s): Sebastien C. R. Pochon
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Cost modeling 22nm pitch patterning approaches
Author(s): Ed Korczynski
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Optimized plasma etch window of block copolymers and neutral brush layers for enhanced direct self-assembly pattern transfer into a hardmask layer
Author(s): Nickolas Brakensiek; Kui Xu; Daniel Sweat; Mary Ann Hockey
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Modeling of block copolymer dry etching for directed self-assembly lithography
Author(s): Zelalem Belete; Eberhard Baer; Andreas Erdmann
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Computational nanometrology of line-edge roughness: noise effects, cross-line correlations and the role of etch transfer
Author(s): Vassilios Constantoudis; George Papavieros; Gian Lorusso; Vito Rutigliani; Frieda Van Roey; Evangelos Gogolides
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