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PROCEEDINGS VOLUME 10532 • new

Gallium Nitride Materials and Devices XIII
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Volume Details

Volume Number: 10532
Date Published: 23 May 2018
Softcover: 22 papers (216) pages
ISBN: 9781510615496

Table of Contents
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Front Matter: Volume 10532
Author(s): Proceedings of SPIE
High-temperature annealing of AlN on sapphire using face-to-face method (Conference Presentation)
Author(s): Hideto Miyake; Yusuke Hayashi; Shi-yu Xiao; Kazumasa Hiramatsu
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Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere
Author(s): Akira Mishima; Yuji Tomita; Yoshiki Yano; Toshiya Tabuchi; Koh Matsumoto; Hideto Miyake
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Crystallization of HVPE-GaN:Mn with metallic Mn as dopant source (Conference Presentation)
Author(s): Michal Bockowski; Malgorzata Iwinska; Tomasz Sochacki; Mikolaj Amilusik; Michal Fijalkowski; Boleslaw Lucznik
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Crystallization of AlGaN by HVPE method (Conference Presentation)
Author(s): Michal Bockowski; Malgorzata Iwinska; Tomasz Sochacki; Mikolaj Amilusik; Michal Fijalkowski; Boleslaw Lucznik
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Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates
Author(s): K. Ding; V. Avrutin; N. Izyumskaya; S. Metzner; F. Bertram; J. Christen; U. Ozgur; H. Morkoc
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Methods for point defect reduction in AlGaN (Conference Presentation)
Author(s): Ramon Collazo; Pramod Reddy; Shun Washiyama; Felix Kaess; Ronny Kirste; Seiji Mita; James Tweedie; Zlatko Sitar
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Polarity control in III-nitrides: new insights into an old problem (Conference Presentation)
Author(s): Martin Albrecht; Natalia Stolyarchuk; Stefan Mohn; Toni Markurt; Ronny Kirste; Ramon Collazo; Aimeric Courville; Zlatko Sitar; Philippe Vennéguès
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Improved crystalline quality of nonpolar a-plane GaN grown on r-plane patterned sapphire substrate (Conference Presentation)
Author(s): Shunya Otsuki; Daiki Jinno; Hisayoshi Daicho; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki
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Selective area sublimation of GaN for top-down fabrication of nanostructures (Conference Presentation)
Author(s): Benjamin Damilano; Stéphane Vézian; Sébastien Chenot; Marc Portail; Blandine Alloing; Julien Brault; Aimeric Courville; Virginie Brändli; Mathieu Leroux; Jean Massies
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High-temperature molecular beam epitaxy of hexagonal boron nitride layers (Conference Presentation)
Author(s): Tin S. Cheng; A. Summerfield; J. D. Albar; Andrew Davies; Christopher J. Mellor; Andrei N. Khlobystov; Laurence Eaves; C. Thomas Foxon; P.H. Beton; Sergei Novikov
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Radiation and process-induced damage in Ga2O3
Author(s): S. J. Pearton; Jiancheng Yang; F. Ren; G. Yang; Jihyun Kim; M. Stavola; A. Kuramata
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Optical properties of doped GaN (Conference Presentation)
Author(s): Axel Hoffmann; Christian Nenstiel; Markus Wagner; Felix Nippert; Gordon Callsen; Nadja Jankowski; Armin Dadgar; Stacia Keller
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Investigation of desorption-induced GaN quantum-dot formation using cathodoluminescence microscopy (Conference Presentation)
Author(s): Gordon Schmidt; Hannes Schürmann; Sebastian Metzner; Peter Veit; Frank Bertram; Christoph Berger; Jürgen Bläsing; Armin Dadgar; André Strittmatter; Jürgen Christen
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Do we know the cause of luminescence broadening in InGaN quantum wells? (Conference Presentation)
Author(s): Lucja Marona; Przemyslaw Wisniewski; Robert Czernecki; Piotr Perlin
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Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)
Author(s): Tomas K. Uzdavinys; Daniel L. Becerra; Mounir D. Mensi; Ruslan Ivanov; Shuji Nakamura; Steven P. DenBaars; James S. Speck; Saulius Marcinkevicius
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Carrier dynamics and modulation of (Al,In)GaN laser diodes (Conference Presentation)
Author(s): Matthias Wachs; Ulrich T. Schwarz
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Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties
Author(s): F. C.-P. Massabuau; P. Chen; S. L. Rhode; M. K. Horton; T. J. O'Hanlon; A. Kovács; M. S. Zielinski; M. J. Kappers; R. E. Dunin-Borkowski; C. J. Humphreys; R. A. Oliver
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Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation)
Author(s): Marcel Filoche; Marco Piccardo; Chi-Kang Li; Yuh-Renn Wu; James S. Speck; Bastien Bonef; Robert M. Farrell; Svitlana Mayboroda; Jean-Marie Lentali; Lucio Martinelli; Jacques Peretti; Claude Weisbuch
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Leakage currents and Fermi-level shifts in C- and Fe-doped GaN (Conference Presentation)
Author(s): Aqdas Fariza; Andreas Lesnik; Silvio Neugebauer; Matthias Wieneke; Jonas Hennig; Jürgen Bläsing; Hartmut Witte; Armin Dadgar; André Strittmatter
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Measurement mechanism of the electrical properties of extremely high-conductivity layered p-type structures (Conference Presentation)
Author(s): Hao-Tsung Chen; Yang Kuo; Yu-Feng Yao; Yean-Woei Kiang; Chih-Chung Yang
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A-plane GaN epitaxial lateral overgrowth structures: growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy (Conference Presentation)
Author(s): Kasey Hogan; Sebastian Metzner; Frank Bertram; Isra Mahaboob; Emma Rocco; F. Shahedipour-Sandvik; Anja Dempewolf; Jürgen Christen
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Demonstration of AlGaN-delta-GaN QW by plasma-assisted molecular beam epitaxy for 260-nm ultraviolet light emitting diodes
Author(s): Cheng Liu; Kevin Lee; S. M. Islam; Huili Xing; Debdeep Jena; Jing Zhang
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Tunnel-injected ultraviolet light-emitting diodes (Conference Presentation)
Author(s): Siddharth Rajan; Yuewei Zhang; Zane Jamal-Eddine; Fatih Akyol; Jinwoo Hwang; Jared Johnson
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Vertical GaN-based power devices on bulk GaN substrates for future power switching systems
Author(s): Daisuke Shibata; Ryo Kajitani; Hiroyuki Handa; Nanako Shiozaki; Shinji Ujita; Masahiro Ogawa; Kenichiro Tanaka; Satoshi Tamura; Tsuguyasu Hatsuda; Masahiro Ishida; Tetsuzo Ueda
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Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications
Author(s): Marko J. Tadjer; Nadeemullah A. Mahadik; Jaime A. Freitas; Evan R. Glaser; Andrew D. Koehler; Lunet E. Luna; Boris N. Feigelson; Karl D. Hobart; Fritz J. Kub; A. Kuramata
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High electron mobility AlInGaN/AlN/GaN heterostructures grown on 150-mm silicon substrate (Conference Presentation)
Author(s): Indraneel Sanyal; Yen Chang Lee; Jen Inn Chyi; Kun Lin Lin
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Carrier screening of built-in electric fields in nitride laser diodes and superluminescent diodes (Conference Presentation)
Author(s): Anna Kafar; Szymon Stanczyk; Katarzyna Pieniak; Tadek Suski; Piotr Perlin
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White-light sources based on GaN laser diodes: analysis and application study
Author(s): Nicola Trivellin; Maksym Yushchenko; Matteo Buffolo; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni
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GaN laser diodes for high-power optical integration and quantum technologies
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; S. Stanczyk; P. Wisniewski; R. Czernecki; D. Schiavon; M. Leszczyński
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Distributed feedback InGaN/GaN laser diodes
Author(s): Thomas J. Slight; Scott Watson; Amit Yadav; Szymon Grzanka; Szymon Stanczyk; Kevin E. Docherty; Edik Rafailov; Piotr Perlin; Steve Najda; Mike Leszczyński; Anthony E. Kelly
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Metalized monolithic high-contrast grating as a mirror for GaN-based VCSELs
Author(s): Robert P. Sarzała; Adam K. Sokół; Łukasz Piskorski; Maciej Kuc; Patrycja Śpiewak; Magdalena Maciniak; Marcin Gębski; Michał Wasiak; Tomasz Czyszanowski
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Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers
Author(s): Charles A. Forman; SeungGeun Lee; Erin C. Young; Jared A. Kearns; Daniel A. Cohen; John T. Leonard; Tal Margalith; Steven P. DenBaars; Shuji Nakamura
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Growth and electronic properties of coaxial GaN-(Al,Ga,In)N core-shell nanowires
Author(s): Martin Hetzl; Theresa Hoffmann; Martin Stutzmann
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Nanoscopic insights into the structural and optical properties of a thick InGaN shell grown coaxially on GaN microrod (Conference Presentation)
Author(s): Frank Bertram; Marcus Mueller; Gordon Schmidt; Sebastian Metzner; Peter Veit; Juergen H. Christen; Jana Hartmann; Hao Zhou; H.H. Wehmann; Andreas Waag
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Emission color control for densely packed InGaN-based nanocolumns and demonstration of independent drive of multicolor (RGBY) micro-LED array (Conference Presentation)
Author(s): Kazuki Narita; Naoki Sakakibara; Takao Oto; Katsumi Kishino
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GaN-based heterostructures for gas and bio sensing (Conference Presentation)
Author(s): Ferdinand Scholz; Martin Schneidereit; Florian Huber; Sabyasashi Chakrabortty; Paulette Iskandar; Jassim Shahbaz; Benedikt Hoerbrandt; Tanja Weil; Klaus Thonke
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Degradation processes and origin in InGaN-based high-power photodetectors
Author(s): Carlo De Santi; M. Meneghini; A. Caria; E. Dogmus; M. Zegaoui; F. Medjdoub; E. Zanoni; G. Meneghesso
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III-nitride on silicon microdisks: electrical injection and bus waveguide side-coupling (Conference Presentation)
Author(s): Farsane Tabataba-Vakili; Iännis Roland; Stéphanie Rennesson; Eric Frayssinet; Julien Brault; Moustafa El Kurdi; Xavier Checoury; Bruno Paulillo; Raffaele Colombelli; Thierry Guillet; Christelle Brimont; Benjamin Damilano; Fabrice Semond; Bruno Gayral; Philippe Boucaud
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Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems
Author(s): Changmin Lee; Chao Shen; Clayton Cozzan; Robert M. Farrell; Shuji Nakamura; Ahmed Y. Alyamani; Boon S. Ooi; John E. Bowers; Steven P. DenBaars; James S. Speck
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Internal quantum efficiency of nitride light emitters: a critical perspective
Author(s): Andreas Hangleiter; Torsten Langer; Philipp Henning; Fedor Alexej Ketzer; Heiko Bremers; Uwe Rossow
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Carrier lifetimes in polar InGaN-based LEDs
Author(s): Lai Wang; Jie Jin; Zhibiao Hao; Yi Luo
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Determination of absolute quantum efficiency of radiation in nitride semiconductors using an integrating sphere (Conference Presentation)
Author(s): Kazunobu Kojima; Hirotaka Ikeda; Kenji Fujito; Shigefusa F. Chichibu
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Flexible optoelectronics based on nitride nanostructures (Conference Presentation)
Author(s): Maria Tchernycheva; Nan Guan; Martina Morassi; Lorenzo Mancini; Joël Eymery; Christophe Durand; Hezhi Zhang; Lu Lu; Noelle Gogneau; Ali Madouri; Ludovic Largeau; Jean-Christophe Harmand
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Plasma-assisted molecular beam epitaxy of GaN nanowires on epitaxial single-layer graphene
Author(s): Sergio Fernández-Garrido; Manfred Ramsteiner; Lauren A. Galves; Chiara Sinito; Pierre Corfdir; Ziani de Souza Schiaber; João Marcelo J. Lopes ; Lutz Geelhaar; Oliver Brandt
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GaN nanostructures grown on graphene for flexible light-emitting diodes (Conference Presentation)
Author(s): Gyu-Chul Yi
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Recent progress on GaN-based superluminescent light-emitting diodes in the visible range
Author(s): A. Castiglia; M. Rossetti; M. Malinverni; C. Mounir; N. Matuschek; M. Duelk; C. Vélez
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Using chessboard phosphor structure and patterned sapphire substrate technique to enhance white LED packaging efficiency (Conference Presentation)
Author(s): Shih-Wei Huang
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Polar and semi-polar oriented InGaN-(In)GaN multiple quantum wells for red-light emitters (Conference Presentation)
Author(s): Thi Huong Ngo; Bernard Gil ; Benjamin Damilano ; Aimeric Courville; Philippe De Mierry
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From heterostructure design to package: development of efficient and reliable UVB LEDs (Conference Presentation)
Author(s): Neysha Lobo Ploch; Tim Kolbe; Arne Knauer; Jens Rass; Hyun Kyong Cho; Johannes Glaab; Jan Ruschel; Anna Andrle; Sylvia Hagedorn; Katrin Hilbrich; Christoph Stoelmacker; Steffen Knigge; Maria Reiner; Ina Ostermay; Andreas Thies; Deepak Prasai; Olaf Krueger; Sven Einfeldt; Markus Weyers; Michael Kneissl
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Highly-efficient top-emitting UV A-to-C LEDs using AlN-based glass electrodes (Conference Presentation)
Author(s): Tae Geun Kim; Tae Ho Lee; Tae Hoon Park; Byeong Ryong Lee; Kyung Rock Son
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Unintentionally formed thin barriers of elevated Al contents in a deep-UV AlGaN quantum well for generating favored compressive strain (Conference Presentation)
Author(s): Chia-Ying Su; Meng-Che Tsai; Keng-Ping Chou; Huang-Hui Lin; Ming-Yen Su; Hsin-Chun Chiang; Yuh-Renn Wu; Yean-Woei Kiang; Chih-Chung Yang
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AlGaN/GaN metal-insulator-semiconductor capacitors with a buried Mg doped layer characterized by deep level transient spectroscopy and photoluminescence
Author(s): Mariam El-Khatib; Philippe Ferrandis; Erwan Morvan; Gérard Guillot; Georges Bremond
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Investigation of GaN-based light-emitting diodes on various substrates
Author(s): Rishabh Raj; Richa Dubey; Pratik Patwari; R. Navamathavan; Rajeev Ranjan
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Optical simulations of blue and green semipolar InGaN/GaN lasers
Author(s): Maciej Kuc; Łukasz Piskorski; Adam K. Sokół; Maciej Dems; Michał Wasiak; Robert P. Sarzała; Tomasz Czyszanowski
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