This PDF file contains the front matter associated with SPIE Proceedings Volume 10224, including the Title Page, Copyright information, Table of Contents, Introduction (if any), and Conference Committee listing.

Electrical properties of MOS structures based on molecular beam epitaxy formed HfO₂/Pr₂O₃ gate dielectric stacks have been studied by CV, GV and IV characteristics. Electrical properties of the structures with HfO₂/Pr₂O₃ and PEALD HfO₂ dielectric layers were compared. Higher gate leakage current and lower interface trap level density in the structure with HfO₂/Pr₂O₃ dielectric layer was observed.

This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10^-6 Ω·cm² was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

This paper presents the results of comparative analysis of the electrical and mechanical characteristics of the tungsten and tungsten alloyed with rhenium films deposited on silicon, from the point of view of their use as interconnects in silicon ICs. W and W (Re-5%) alloyed with rhenium films were made by magnetron deposition. Sheet resistivity for W and W (Re- 5%) was 13 and 27 μOhm·cm respectively. Elemental composition the formed films was examined by Auger spectroscopy. To investigate the electromigration resistance of the conductors a methodology based on the accelerated electromigration testing at constant temperature was used. A comparative analysis of the mechanical stresses carried out in the W and W(Re - 5%) films. For this purpose was applied non-destructive method for optical laser scanning. At the same time, these films explored their ability of adhesion to silicon and silicon oxide. It is shown that the pull force of the W(Re - 5%) films was ~1500 G/mm², of the W films ~ 700 G/mm²

In this work we provided a review of the study of MACE (metal-assisted chemical etching) of Si with Ag, Pt, Ni and Au films and clusters. Type and shape of the metal mask play an important role in determination of morphology of the nanostructured layer. It is possible to form both wide range of porous layer and nanowires array. The basic features of the MACE with various types and shape of the metal were revealed.

Mechanical properties of freestanding Au-Mn nanowires and Au-Mn nanowire on a Cu (110) substrate are studied with ab initio theoretical approach. The calculations were carried out using the software package Vienna Ab-initio Simulation Package (VASP), which is based on the density functional theory (DFT). It was shown that the breaking force (0.45nN) as well as the interatomic distance at a breaking point in bimetallic nanowire (3.0 Å) are higher than in one component Au wire (0.4 nN and 2.6Å respectively). Relative elongation of 15 % results in a fracture of bimetallic nanowire.

We studied the mechanical response of the nanojunction in a form of three-atomic Au chain aligned vertically between two pyramidal gold electrodes and demonstrated that the breaking of nanocontact depends only the interaction between Au atoms in the chain and dependents slightly on the structure and properties of the atomic structure of the electrodes.

Ultrathin (1–10 nm) Cu and Au films were prepared on the silicon and quartz substrates by magnetron sputtering at room temperature. We measured the transmission coefficient of the films at a wavelength of 3cm and analyzed a surface morphology of these films. It was shown that the films with thicknesses less than 7.5 nm (Au) and 3 nm (Cu) are almost transparent for microwaves. This effect is explained by quick oxidation of Cu and the complex surface morphology of nanometer thick films. The Au film morphology is evolved with increasing average Au thickness d from hemispherical islands initially (1.0 nm<d<5.0 nm) to partially coalesced worm-like island structures (d=10 nm).

The optical properties of Ag ultrathin films in dependence of their thickness are studied theoretically in a wavelength range 0.3 - 10 μm. The extinction coefficient (k) and refractive index (n) for thin Ag films with smooth surface structure are calculated with software package VASP. It was found the effect of growth of extinction coefficient and shift of its peak into long wavelength range with the thickness increasing. The effect is explained by the significant increasing of the surface electron states. Refractive index n is increased with the wavelength growth and attains saturation value n_s at the wavelength λ_s. The thicker the films the higher the magnitude of n_s and the larger the wavelength λ_s. Our results of calculations of k(λ) are in a good agreement with experimental data from ref.[25]. The difference in magnitudes of n obtained experimentally and theoretically can be explained by the formation of Ag nanoclusters on the surface of sputtered film.

In this work the superposition of effects with different diffraction origins and orders by formation of resulting magnetooptical response from the structures like magneto-photonic crystals in the regions far from plasmonic resonances were investigated for the first time. The contributions into magneto-optical response from diffraction and interferential phenomena in maxima of different orders in three-dimensional systems like magneto-photonic crystals were studied. It was demonstrated that the usage of integral response in order to analyze magneto-optical effects results in disappearance of interference phenomena. Diffraction maximum of the zero order reflects represent magnetic component of magnetooptical response. Numerical evaluations of observed effects were done.

Bismuth ferrite, a widely studied room temperature multiferroic, provides new horizons of multifunctional behavior in phase transited bulk and thin film forms. Bismuth ferrite thin films were deposited on lattice mismatched LaAlO₃ substrate using pulsed laser deposition technique. X-ray diffraction confirmed nearly tetragonal (T-type) phase of thin film involving role of substrate induced strain. The film thickness of 56 nm was determined by X-ray reflectivity measurement. The perfect coherence and epitaxial nature of T- type film was observed through reciprocal space mapping. The room temperature Raman measurement of T-type bismuth ferrite thin film also verified phase transition with appearance of only few modes. In parallel, concomitant La and Al substituted Bi_1-xLa_xFe_0.95Al_0.05O₃ (x = 0.1, 0.2, 0.3) bulk samples were synthesized using solid state reaction method. A structural phase transition into orthorhombic (Pnma) phase at x = 0.3 was observed. The structural distortion at x = 0.1, 0.2 and phase transition at x = 0.3 substituted samples were also confirmed by changes in Raman active modes. The remnant magnetization moment of 0.199 emu/gm and 0.28 emu/gm were observed for x = 0.2 and 0.3 bulk sample respectively. The T-type bismuth ferrite thin film also showed high remnant magnetization of around 20emu/cc. The parallelism in magnetic behavior between T-type thin film and concomitant La and Al substituted bulk samples is indication of modulation, frustration and break in continuity of spiral spin cycloid.

Principal difference of magnetic nanoparticles from the bulk matter which cannot be ignored when constructing upon them combined metamaterials and modern devices is the essential influence on their behavior thermal fluctuations of the environment. These disturbances lead to specific distributions of the particles characteristics and to stochastic reorientations of their magnetic moments. On the basis of quantum-mechanical representation of the particle possessing intrinsic magnetic anisotropy and being placed onto the external magnetic field we developed general approach to describe equilibrium magnetization curves and relaxation Mössbauer spectra of magnetic nanoparticles for diagnostics of magnetic nanomaterials in the whole temperature or external field ranges. This approach has universal character and may be applied not only to the systems under thermal equilibrium, but may in principle describe macroscopic dynamical phenomena such as magnetization reversal.

The structural and optical properties of Ge and GeSi nanocrystals, formed by annealing of GeO/SiO₂ multilayers have been investigated. According to Raman spectroscopy, the formation of pure Ge nanocrystals is observed after post growth annealing at 700 °C. Annealings at 800°C-900°C leads to the formation of intermixed Ge_xSi_1-x nanocrystals. High resolution transmission electron microscopy shows that the structure and the size of the nanocrystals strongly depend on annealing temperature. Spatial redistribution of Ge with the formation of large faceted clusters located near the Si substrate as well as GeSi intermixing at the substrate/film interface were observed. In the case of the sample containing 20 pairs of GeO/SiO₂ layers annealed at 900 °C, some clusters exhibit a pyramid-like shape. FTIR absorption spectroscopy measurements demonstrate that intermixing between the GeO and SiO₂ layers occurs leading to the formation of a SiGeO₂ glass. Low temperature (10 K-100 K) photoluminescence was observed in the spectral range 1400-2000 nm for samples containing nanocrystals. The temperature dependence of the photoluminescence is studied.

Silicon nanocrystals and germanium nanolayers and nanocrystals were created into i-layers of p–i–n structures based on thin hydrogenated amorphous silicon films. The nanocrystals were formed using pulsed laser annealing with an excimer XeCl laser generating pulses with the wavelength of 308 nm and the duration of 15 ns. The laser fluence was varied from 100 (that is below the melting threshold) to 250 mJ/cm² (above the threshold). The laser treatment allowed the formation of the nanoscrystals with the average size from 2 to 5 nm, depending on the laser-annealing parameters. The size of nanocrystals (in Si and Ge layers) and their Si-Ge composition (in GeSi alloy structures) was estimated through Raman spectra analysis. The structural parameters of Si, Ge and GeSi nanocrystals were also studied using electron microscopy and atomic force microscopy. Current–voltage measurements showed that the p–i–n structures exhibit diode characteristics. The diodes with Si nanocrystals produced the electroluminescence peak in the infrared range (0.9–1.0 eV), which spectral position was dependent on the laser annealing conditions. It was suggested that radiative transitions are related to the nanocrystal/amorphous silicon matrix interface states. The proposed approach can be used for producing of solar cells or light-emitting diodes on non-refractory substrates.

In this paper, the influence of the conditions of chemical and electrochemical nickel plating of nanostructured silicon and subsequent heat treatment on the phase composition of Si/Ni structures with advanced interface is studied. Nanostructured silicon formed by chemical and electrochemical etching was used for the formation of a developed interphase surface. The resulting Si/Ni samples were analyzed using scanning electron microscopy, energy dispersive X-ray analysis, and X-ray phase analysis. The experiments have revealed the differences in phase composition of the Si/Ni structures obtained by different methods, both before and after heat treatment.

Influence of the alkalis (KOH, NaOH), acids (HNO₃, HCl, H₃PO₄, H₂SO₄) and solvents (C₃H₇NO, deionized water) on the Ge₂Sb₂Te₅ thin films was investigated. Most possible etching mechanism of GST225 thin films by HNO₃ solution was proposed.

There are two ways to solve the glass-formation prognosis problem in the absence of a unified concept of glass-formation that connects its structural-chemical, kinetic, and thermodynamic aspects. Structural-chemical and energetic factors of glass-formation, together with the relaxation conditions of glass- forming ability with increase in atomic numbers of elements have been considered as a starting point for the development of the structural-energetic concept of glass formation.

Study of new materials and composites based on porous silicon is of great interest for electronics and microelectronics industry. Functional characteristics of structured layers are closely associated with their morphology properties and treatment conditions correspondently. In this work a porous silicon layers formed by metal-assisted chemical etching (MACE) with the use of gas adsorption-desorption method, scanning electron microscopy (SEM) and fractal geometry have been examined. Specific surface area given by multi-point BET method was about of 7 m₂/g and 13 m₂/g for n-Si and p-Si specimens correspondently. Surface fractal dimension D_s was estimated for p-type mesoporous silicon from BET results using Neimark’s thermodynamic approach, the value is D_s=2.86. “Slit islands” Mandelbrot’s algorithm was applied for analysis of SEM images and calculations of surface fractal dimension D_s, computation gives D_s = 2.52 for n-Si sample and D_s = 2.84 for p-Si sample. The study testified the fractal nature of porous layers formed by MACE and exhibits correlation between different methods of fractal dimension estimation. The results can be applied for improvement of methods of structured solids characterization.

The experimental results relating to exciting the defect–impurity subsystem of a (001)-oriented Si substrate containing ion-synthesized buried Si:P:O layer and transformation of the material into a porous medium are represented. After coimplantation with P⁺ and O₂⁺ ions, the substrates are subjected to the annealing in non-isothermal reactor at two average temperatures (900 and 1100°C, 5 min) and two opposite directions of an axial temperature gradient grad T. The temperature difference between reversed sides of the substrate is estimated of the order of ~ 1.5 and ~ 3 °C, respectively. After further thermal evolution in conventional furnace (1150 °C, 4 hours) and cleaving, the formation of two types of a porous structure in the specimens is exposed. The first type of this structure is the developed porous structure, where initially spheroid-like empty voids have grown up in size and changed their shape to form octahedron construction. The second type of this structure is a regular array of hollow tubes oriented along screw components of misfit dislocations. In the both cases, the porous structures always are initiated on the substrates, whose implanted sides have been faced to the cold pedestal during annealing in non-isothermal reactor.

Applicability of porous anodic alumina formed in selenic acid based electrolyte as the matrix for formation and Raman characterization of nanomaterials is investigated. For that, Raman spectra of nanostructured CdS layers deposited on top of porous alumina matrices are obtained. These spectra were compared with the ones, registered for the composites prepared using the commonly used matrix formed in oxalic acid solution. It is shown that application of porous alumina matrix formed in selenic acid electrolyte afford to detect the peaks corresponding to the CdS layers even at small amounts of CdS. It happens due to the absence of luminescence background in such matrix, which exists in matrices produced in organic acid electrolytes, for example, in oxalic acid.

Nanocarbon materials are of great interest as field emission cathodes due to their low threshold voltage. In this work current-voltage characteristics of nanocarbon electrodes were studied. Low-threshold emission was found in planar samples where field enhancement is negligible (<10). Electron work function values, calculated by Fowler-Nordheim theory, are anomalous low (<1 eV) and come into collision with directly measured work function values in fabricated planar samples (4.1-4.4 eV). Non-applicability of Fowler-Nordheim theory for the nanocarbon materials was confirmed. The reasons of low-threshold emission in nanocarbon materials are discussed.

This work is devoted to the CVD-synthesis of arrays of carbon nanotubes (CNTs) on Co-Zr-N-(O), Ni-Nb-N-(O), Co- Ta-N-(O) catalytic alloy films from gas mixture of C₂H₂+NH₃+Ar at a substrate temperature of about 550°C.Heating of the amorphous alloy causes its crystallization and squeezing of the catalytic metal onto the surface. As a result, small catalyst particles are formed on the surface. The CNT growth takes place after wards on these particles. It should be noted that the growth of CNT arrays on these alloys is insensitive to the thickness of alloy film, which makes this approach technically attractive. In particular, the possibility of local CNT growth at the ends of the Co-Ta-N-(O) film and three-level CNT growth at the end of more complex structure SiO₂/Ni-Nb-N-O/SiO₂/Ni-Nb-N-O/SiO₂/Ni-Nb-N-O/SiO₂ is demonstrated.

Low-dimensional transit-time structures for terahertz generation and detection are discussed. The negative conductivity at terahertz frequencies is crucial for generation. It may arise in an array of silicon nanowires (1D), as well as in a thin silicon layer (2D) in “silicon-on-insulator” wafer. Ballistic regime, scattering regime and alternating barrier injection regime (BARITT) are simulated. The latter allows a negative conductivity even for rather strong scattering.

The characteristics of high performance signal detection over a wide frequency range (1 MHz ÷ 100 GHz) in the context of a non-standard application for tunnel diodes is discusses.

The periodical-in-voltage features of the negative differential conductance (NDC) region in the current-voltage characteristics of a high-quality GaAs/AlAs terahertz resonant-tunneling diode have been detected. The found oscillations are considered taking account of the LO-phonon excitation stimulated by tunneling of electrons through the quantum active region in the resonance nanostructure where an undoped quantum well layer is sandwiched between two undoped barrier layers. Rearrangements in the I-V characteristics of the resonant-tunneling diode as a consequence of the topological transformation of a measurement circuit from the circuit with the series resistance R_s to the circuit with the shunt R_p have been experimentally studied and analyzed. The revealed substantial changes in the current-voltage characteristics of the resonant-tunneling diode are discussed schematically using Kirchhoff's voltage law.

We have developed the ultra-short pulsed laser processing methods for patterning of graphene field effect transistors in topological and chemical way. We investigated in details the photoresponse in graphene FETs before and after laser-induced modification for laser influence below threshold energy. We observed two different mechanisms of the photoresponse under ultra-short laser pulses (280 fs). The photocurrent, observed for both pristine and laser processed graphene is raised because the laser induced charge is transferred from graphene to trapped levels in SiO₂ surface resulting in electrostatic Dirac point shift. For laser oxidized areas we observed more pronounced photocurrent because of heterojunction formation in laser-processed area. While for electrostatic effect the relaxation time estimated as 50 seconds, the heterojunction relaxation was observed for less than 3 ms.

In this article, we have studied the influence of Si3N4 and SiO2 thin film gate dielectrics on the current-voltage characteristics of the graphene-based transistor. The test structure of graphene transistor was fabricated with the top and back gate. Graphene has been produced by chemical vapor deposition, and then transferred to the silicon dioxide on a silicon wafer. The channel of the transistor has been formed by etching in oxygen plasma through a photolithographic mask. Metals electrodes of the drain, source, and gate were deposited by resistive evaporation in a vacuum. It was used titanium / aluminum with a thickness of 50/200 nm. In the case of the back gate, silicon dioxide was used, obtained by thermal oxidation of the silicon substrate. For top gate was used silicon nitride deposited by plasma chemical deposition. It was demonstrated that field effect is more pronounced for the case of SiO2 back gate compare to the Si3N4 top gate. For the SiO2 back gate we have observed that the source- drain current decreases, from 2 mA to 3 mA, with increasing the gate voltage, from 0 to 40 V, at constant source-drain voltage, 2 V. In case of Si3N4 top gate the modulation of source-drain current was not significant for the comparable electric field strength. Based on the value of gate voltage for current minima in transfer function the poor quality of Si3N4 –graphene interface is concluded.

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

The superconducting properties of ruthenium (Ru) thin films and microstructures are investigated. The microstructures are used as transition edge sensors (TES), working at He-3 evaporation cryostats’ temperatures. Ruthenium is substantially inert, and the critical temperature T_c for bulk Ru samples is known from state of art to be 0.40-0.51 K. We investigated magnetron sputtered Ru thin films with thicknesses 13-300 nm on a Si substrate and electron lithography fabricated TES samples, based on the thin-film Ru microstructures. It has been found, that the T_c for the Ru thin films is 0.55-0.70 K, and the width of the transition region is 1-5 mK, and for the Ru TES T_c = 0.55 and ΔT = 4 mK. Furthermore, it was established that lithography process had no significant influence on the properties of the TES samples, so we were able to get consistent properties for several fabrication sessions. Therefore ruthenium is concluded to be a desirable material for transition edge sensors working at He-3 cryostats’ temperatures.

The results of investigation of a memristor nanostructures based on titanium nanowires fabricated by methods of focused ion beams are presented. The memristor effect in the titanium nanowires is investigated by an AFM in the mode of spreading resistance map. It is shown that the using of FIB milling allows to form conductive channels with different shapes and nanoscale dimensions. The analysis of the I-Vs of Ti nanowire memristor structures shows that the resistivity ratio in the high- and low-resistance states is higher than 10². After a series of measurements determined that memristor structures have a high stability of resistance. The obtained results are most promising for developing the technological processes of the formation of resistive operation memory cells.

The resistive switching of vertically aligned carbon nanotube (VA CNT) by the action of a compressive strain is shown. The memory cell based on compressed VA CNT has been created. Origin of resistive switching of strained VA CNT is described. It is shown the resistive switching associated with redistribution of deformation and corresponding piezoelectric charge in the nanotube. The ration resistance of high-resistance to low-resistance states of the memory cell amounts 7 at voltage reading of 0.2 V. The results can be used in the development nanoelectronics devices based on VA CNTs, including the resistive random-access memory.

Graphene is a nanomaterial that due to unique properties has attracted great interest for various applications, in particular, for development of nanoelectronic devices. In the paper the graphene field-effect transistors (GFET) and resonant tunneling diodes (RTD) are analyzed with the use of proposed models.

First, simulation of dual-gate field-effect transistor based on monolayer graphene with the use of proposed combined model is considered. In the model the following important factors such as quantum capacitance, hole and electron mobility difference, drain and source resistances are taken into account. Investigations of dependence of a drain current on drain voltage for various top-gate-to-source voltages are performed. Influence of channel length, source and drain resistances on output characteristics of the device is analyzed. Comparison of calculation results with simulation ones obtained with the known models was carried out.

Secondly, simulation of graphene-based nanostructures on hexagonal boron nitride, silicon carbide and silicon dioxide substrates was performed using proposed self-consistent numerical model, based on effective wave function formalism. The developed models in detail were described in our previous works. The possibility of using a proposed self-consistent model for double- and triple-barrier graphene-based RTD simulation was illustrated. As well as it was investigated the influence of different parameters on IV-characteristics of graphene-based RTDs. It was shown that it is necessary to take into account extended (passive) regions for adequate simulation of these devices.

Ensemble Monte Carlo simulation of electron transport in GaAs/AlAs quantum wire transistor structure is performed. The response of electron drift velocity on the action of harmonic longitudinal electric field is calculated for several values of electric field strength amplitude and gate bias at 77 and 300 K. The periodical electric field has a 1 THz frequency. The nonlinear behaviour of electron drift velocity due to scattering processes is observed.

Paper presents the results of research of electrical characteristics features of multibarrier AlxGa1-xAs/GaAs heterostructures with tunnel-nontransparent potential barriers. Briefly described constructive-technological features fabricated using molecular beam epitaxy. We measured the quasi-static current-voltage characteristics of test items by electric pulses of duration 10-6 s and a duty cycle of 103. Observed characteristics with a strong section of the negative differential resistance in the current range of several tens of milliampers. It is proposed to use this effect for the generation of terahertz electromagnetic radiation. Briefly stated the theoretical interpretation of the observed phenomena on the basis of quasi-hydrodynamic theory of electron drift.

The simulation of current-voltage characteristics for 4H-SiC Schottky diode with Ti Schottky contact has been carried out with used of TCAD program. Obtained current-voltage characteristics has been analyzed and compared with theoretical and experimental results. It is established that the Schottky diode parameters (forward current, ideality coefficient, Schottky barrier height, breakdown voltage) obtained in proposed model are good agreement with data for such type diodes.

In this paper, we consider the issue of research and development of on-chip optoelectronic devices designed for the optical interconnecting of integrated circuit elements. We address the conceptual on-chip optical interconnections based on A^IIIB^V nanoheterostructure lasers with functionally integrated modulators of optical radiation. According to the estimations, these optoelectronic devices can generate subpicosecond optical pulses. The paper is aimed at the development of numerical models, simulation methods, and specialized software. These aids are intended for the research of physical processes taking place in high-speed heterostructure photodetectors suitable for operation as parts of on-chip optical interconnections together with the lasers-modulators. We propose to utilize the drift-diffusion approximation of the semiclassical approach for the numerical simulation of charge carrier transport and accumulation in semiconductor photosensitive heterostructures. The drift-diffusion numerical simulation technique was developed. This technique is based on the application of the Newton method, implicit difference scheme, and Slotboom drift-diffusion formulation in terms of electron and hole imref exponents and electrostatic potential. We researched p+-Al_0.3Ga_0.7As/i-GaAs/n+-Al_0.3Ga_0.7As and metal/n-Al_0.3Ga_0.7As/n+-GaAs heterostructures. Rise and fall times of the devices being considered are approximately equal and amount to about 1.6 ps for the p-i-n structure and 1.7 ps for the Schottky-barrier photodiode. We concluded that it is reasonable to develop the methods directed at the improvement of photodetector response speed.

In this article the layout and structure of the microwave switcher based on the managed electron density maximum rearrangement in multi-contacts functionally integrated active region are considered. The basis of the microwave switcher is a normally opened high electron mobility transistor structure (HEMT) with multiple Schottky gates and the corresponding number of switching ohmic contacts. In this research two-dimensional finite-difference physical and topological model of the considered microwave switchers is proposed. The distinctive features of the proposed model are combination of two different sets of variables and explicit first-order upwind discretization scheme for the normalized continuity equation. The obtained results of numerical modeling are discussed.

This paper considers the possibility of constructing nonreactive memristor-based oscillators adding a device exhibiting negative differential resistance (NDR). The ambipolarity of the memristor I-V characteristic is shown to ensure the generation mode of such circuits. S-type and N-type variants of the memristor-based oscillator are analyzed. Device and circuit implementations of ambipolar memristors are suggested. NDR devices, as well as single-threshold comparators can be used in the implementation of ambipolar memristor-based oscillators.

An operator of the permittivity can completely describe alone a microwave response of conductors with the spatial dispersion. An eigenvalue problem for the nonself-adjoint permittivity operator Ễ_a was considered generally to search the wave solutions for conductors and superconductors. An appearance of additional solutions (additional waves) due to the spatial dispersion can strongly influence the properties of nanoelectronic devices or novel superconducting materials in the form of anomalous losses for example, and should be accounted in simulation and modeling of micro- and nanoelectronic devices. It was concluded that the modulus |Ž| of the surface impedance is proportional to the degree of frequency ω^2/3 for all normal conductor solutions except that for the superconductor. There was some criticism related to the idea that the electrodynamics of superconductors should be in principle reduced to those for conductors as the temperature approaches and beyond the critical temperature. We demonstrate that appropriately taken into account effects of the spatial dispersion can give the general frequency dependence of the surface impedance for the obtained solutions including that for the superconductor. It is shown that an incorporation of the spatial dispersion leads to an appearance of the Meissner effect in perfect conductors in the same manner as in superconductors.

The task about calculation of high-frequency conductivity and Hall constant of a thin semiconductor film is solved by the kinetic method. This film is placed in transverse stationary magnetic field and longitudinal alternative electric field. The ratio between film thickness and mean free path of charge carriers is assumed to be arbitrary. Skin effect is negligible. The diffuse-specular mechanism of charge carriers scattering from film surfaces is considered in the view of equal mirrority coefficients of the upper and lower film surfaces. The dependences of non-dimensional conductivity and Hall constant on non-dimensional parameters: electric field frequency, magnetic field induction and film thickness are investigated. The comparative analysis of obtained results with the calculations for the case of a metal film are made.

In this paper based on the new parameterization shape, an alternative heavy ion induced soft errors characterization approach is proposed and validated. The method provides an unambiguous calculation procedure to predict an upset rate in highly-scaled memory in a space environment.

A compact MOSFET model is described, which is adapted to simulate the drain current under irradiation.

We propose a Verilog-A modeling concept for modern bulk and SOI FinFETs TID sensitivity modeling. The concept allows to model the fin width and length dependencies of TID sensitivity.

We present a reasonable application of triple modular redundancy as an effective method of multiple soft error mitigation in 65-28 nm CMOS VLSI.

Single Event Transient (SET) caused by charged particle traveling through the sensitive volume of integral circuit (IC) may lead to different errors in digital circuits in some cases. In technologies below 180 nm, a single particle can affect multiple devices causing multiple SET. This fact adds the complexity to fault tolerant devices design, because the schematic design techniques become useless without their layout consideration. The most common layout mitigation technique is a spatial separation of sensitive nodes of hardened circuits. Spatial separation decreases the circuit performance and increases power consumption. Spacing should thus be reasonable and its scaling follows the device dimensions’ scaling trend. This paper presents the development of the SET simulation approach comprised of SPICE simulation with “double exponent” current source as SET model. The technique uses layout in GDSII format to locate nearby devices that can be affected by a single particle and that can share the generated charge. The developed software tool automatizes multiple simulations and gathers the produced data to present it as the sensitivity map. The examples of conducted simulations of fault tolerant cells and their sensitivity maps are presented in this paper.

Application variety and huge potential market of RF MEMS switches guarantee relentless research interest to the field. There are lots of different types of MEMS switches. Direct contact MEMS switches are simplifier for integration than capacitive MEMS switches. Lateral technology considerably simplifies the formation process. The objective of this research is to estimate characteristics of the simple direct-contact lateral MEMS switch and to understand the improvement directions.

The MEMS switches were fabricated on the SOI wafers by e-beam lithography, dry etching and wet HF-etching. E-beam lithography and dry etching were used to form the cantilever and electrodes on the buried oxide layer. The structure with two control electrodes was used. IV characteristics were measured by Keithley 4200-SCS. The distance between cantilever and control electrodes was 100 nm.

From the obtained IV characteristics it is clear that the devices switches at about 60 V. High control voltage could be explained by the large distance between cantilever and control electrode, and high rigidity of the cantilever.

Following simulation in COMSOL Multiphysics showed that the control voltage could be decreased to 20-30 V by adding of spring element to the cantilever and device geometry modification.

Electrostatically actuated MEMS switch with the resistive contact is presented. Design of the switch includes the active contact breaking mechanism, which allows to detach the beam from the signal electrode in case of sticking. The mechanism is realized by the presence of two driving electrodes under the beam. The switch is fabricated by the surface micromachining. Finite element simulation and experimental investigation of the switch in a cold regime are performed.

In the report the linear acceleration sensor design with three axis of sensitivity is researched. Parameterized geometry and finite element model for modal analysis are developed in the ANSYS program. Behavioral description of the study design is developed with language VHDL-AMS to simulate the sensor operation under the influence of linear acceleration along three axis of sensitivity. On the basis of research results three-axis device sensitivity, cross-sensitivity, duration transients are specified. As part of the work the experimental sensor prototypes are fabricated.

The paper presents computer simulation results of heavy charged particles radiation effect on elements of electrostatic microelectromechanical systems. Modeling methods of heavy charged particles impact on MEMS elements were envisaged. The radiation sensitivity of different types of fractal electrostatic MEMS were evaluated. Methods of reduction of radiation impact on electrostatic MEMS based on fractal theory were discussed. Conclusions about fractal electrostatic MEMS features were outlined.

This paper presents the new architecture of 2-DOF (degree-of-freedom) drive mode and 1-DOF sense mode gyroscope with the concept of additional anchoring that retains all the advantages of the Dynamic Vibration Absorber (DVA) concept while being operated at high frequencies. These concepts allow reduction of the bandwidth by varying the coupling parameter during the design, thereby increasing the mechanical sensitivity. In the present design, the anchoring concept has been implemented by adding a central anchor for the sense mass. The steady state response and design concept have been devised using analytical modeling.

A method of signal processing devices design for micromechanical accelerometers with capacitive transducers is proposed. This method provides the complex solution of the sensibility increasing and noise immunity problems by finding of the difference frequency of signals, which are formed by two identical generators with micromechanical capacitive transducers in frequency control circuits. In this study the analog and digital versions of the highly sensitive signal processing devices circuits with frequency output were developed. The breadboards of these devices are fabricated and studied and the project of their integral realization is designed.

A method based on electrophoretic deposition (EPD) has been developed to produce uniform and local deposits of multiwalled carbon nanotubes (CNT) on interdigital structures of planar supercapacitor (SC) at room temperatures. Alcohol/acetone suspensions were used under constant voltage conditions in the range of 6 to 100 V, with deposition times ranging from 2 to 60 minutes and electrodes space from 2 to 15 mm. It was shown that for dense layers deposition with good adhesion on the narrow lines of the planar SC electrodes it is necessary to use average values of the electric field and multi-stage method in which the deposition and drying processes are alternated. Electrochemical tests of the sandwich-like supercapacitors with electrodes obtained by the described method were carried out. The specific capacity of experimental samples increased from 0.24 to 1.07 mF/cm2 with an increase in the number of EPD cycles from 3 to 9.

We developed a new platform for biosensing applications. Aptamers as sensitive agents have a great potential and gives us possibility to have highest possible selectivity among other sensing agents like enzymes or antibodies. We covalently bound aptamers to the functional groups of c-CNTs and then put this system on the surface of polymer substrate. Thus we got high sensitive flexible transparent biological sensors. We also suggest that by varying aptamer type we can make set of biosensors for disease detection which can be integrated into self-healthcare systems and gadgets.

This paper describes using a MET-based low-noise angular motion sensor to precisely determine azimuth direction in a dynamic-scheme method of measuring Earth’s rotation velocity vector. The scheme includes installing a sensor on a rotating platform so that it could scan a space and seek for the position of highest Earth’s rotation vector projection on its axis. This method is very efficient provided a low-noise sensor is used. We take a low-cost angular sensor based on MET (molecular electronic transduction) technology. Sensors of this kind were originally developed for the seismic activity monitoring and are well-known for very good noise performance and high sensitivity. This approach, combined with use of special signal processing algorithms, allowed for reaching the accuracy of 0.07° for a measurement time of 200 seconds.

Planar electrochemical systems are very perspective to build modern motion and pressure sensors. Planar microelectronic technology is successfully used for electrochemical transducer of motion parameters. These systems are characterized by an exceptionally high sensitivity towards mechanic exposure due to high rate of conversion of the mechanic signal to electric current. In this work, we have developed a mathematical model of this planar electrochemical system, which detects the mechanical signals. We simulate the processes of mass and charge transfer in planar electrochemical transducer and calculated its transfer function with different geometrical parameters of the system.

We have developed the new technology for production of sensitive modules for electrochemical sensors of pressure and acceleration. The technology is applicable for mass production and scalable for high-volume production. In this work we demonstrate the new sensing module for electrochemical motion sensors, and its possibility of applying in geophones. We fabricated prototypes of electrochemical planar transducer chips, produced a laboratory prototype of a geophone based on our planar transducer chip, and tested them. This paper presents the preliminary results of the tests.

In this paper we investigate the possibility of applying a planar electrochemical trancducer (ECT) as a sensing element for a precision seismometer with a high inertial mass. The precision seismometer based on simplest planar ECT was manufactured and tested. We investigated the amplitude-frequency and volt-ampere characteristics, self-noise level and the transducer’s impedance frequency dependence. One of the key characteristics for the seismometer is the intrinsic noise level, this work focuses on the self-noise level.

In this paper we provide 3d full-vector static electromagnetic simulation of silicon micro-ring resonator operating. We show that geometrical and scalar approaches are not sufficiently accurate for calculating resonator parameters. Quite strong dependence of ring resonator radius on waveguide width is revealed.

The electro-optical element for converting of zero-order and second-order Bessel laser beams based on strontium – barium niobate crystal has been developed. The theoretical research of electrically tunable beam switching has been carried out for various diffractive axicons with periods 1.3 μm, 2 μm, 4 μm and a crystal with 9.7 mm length. The research showed maximum sensitivity of output beam intensity for axicon period 1.3 μm. The calculated switching voltage for this case was about 800 V.

The principle of the formation of thin and thick photoresist films on surfaces with considerable relief by the aerosol deposition using ultra low flow was investigated. It was shown that the change in the photoresist blend composition of solution is required with decreasing film thickness less than 1 micron to achieve a roughness of less than 150 nm. And the film at least 0.7 microns thickness can be formed and have the uniform film thickness as on the walls and on horizontal surfaces on the substrate with grooves obtained by etching liquid. It is shown that even with a film thickness of 10 microns vertical walls may be partially cover the of the photoresist and unfilled plasma-chemical etching grooves with vertical walls, whose width not exceeding 10 microns. To determine the uniformity of film thickness atomic force microscopy was used. And it was shown that up to 2 microns of film thickness spectroscopic methods with the analysis of the fluorescent signal intensity for positive photoresists is possible to use too.

Based on the analysis of the simplest circuit with a two-mirror objective, the potential performance of the lithographic process of a Maskless X-ray lithographer (MLXL) with a Xe X-ray source at a wavelength of 11.2 nm is consider. It is shown that at a laser power of 1 kW the performance of the lithographer may reach of 22 wafers with a diameter of 300 mm per hour. The main factors that affect the performance are analyzed, and directions for optimization MLXL optical circuit are discussed. Experimental results of studying the roughness and the surface shape, and the Mo / Si multilayer mirror reflectance deposited onto the surface of a commercially available micro-electro-mechanical system (MEMS) with a pixel size of 8 μm are presented. The reflection coefficient at a wavelength of 13.5 nm was about 3%. The reasons of low reflectance are discussed. The conclusion is that at the moment the creation of MEMS with improved characteristics is the key problem, the solution of which depends MLXL prospects.

This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

The article dwells upon theoretical considerations on the nature of probe local anodic oxidation. The concept of the process presented here allows for the device intrinsic amperage limitations in the tip-sample system. The work also demonstrates characteristics of height-modulated dielectric mask formation on the solid-state surfaces.

Carbon nanotube (CNT) and SiO₂ etching effects was studied and was found that using different techniques of focused ion beam (FIB) exposure and using two pass etching leads to a significant difference in the etching rate of CNTs relatively of SiO₂ and directly individually oxide itself. The parameters annealing of the structures to remove the effects of the charge arising from the etching of CNT on SiO₂ was determined and the effect of the charge on the effects of the deposition of organic molecules from solution was studied. Different behavior of deposition of polar and non-polar polymer materials on charged regions with width less than 100 nm was found. Obtained structures was investigated by SEM, AFM methods and for structures with polyaniline deposited CVC was measured and by comparison with literature and experimental data analysis of polyaniline structuring in nano-scale gap formed with FIB was carried out.

In this work we developed methods of maskless laser patterning of graphene oxide surface. By varying of laser pulses and energies we find optimal energy to make GO reduction in patterned areas. By laser reduction of graphene oxide, we made patterns which could be used for biosensors. We put aptamers on sensing structures and measured spectral properties of such structures. We showed stability of biosensor structures electric characteristics.

Using of complex equipment SemiTEq shown in example of a closed cycle of basic technological operations for production of high-power field microwave transistors based on gallium nitride in the "Svetlana-Rost" JSC. Basic technological operations are shown: MBE growth of heterostructures, metal deposition of contacts using electron-beam evaporation system, thermal annealing of ohmic contacts, meza-isolation plasma-chemical etching and dielectric plasma deposition. The main problems during the technological route as well as ways to solve are discussed. In particular, ways to reduce the dislocation density in the active region of the transistor heterostructures grown on the mismatched substrates are described in detail. Special attention given to the homogeneity and reproducibility both after some manufacturing operations and applied to the end product.

The effects of both CF₄/O₂ and O₂/Ar mixing ratios in three-component CF₄/O₂/Ar mixture on plasma parameters, densities and fluxes of active species determining the dry etching kinetics were analyzed. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of CF₄ for O₂ at constant fraction of Ar in a feed gas produces the non-monotonic change in F atom density, as it was repeatedly reported for the binary CF₄/O₂ gas mixtures. At the same time, the substitution of Ar for O₂ at constant fraction of CF₄ results in the monotonic increase in F atom density toward more oxygenated plasmas. The natures of these phenomena as well as theirs possible impacts on the etching/polymerization kinetics were discussed in details.

The results presented on Silicon one-dimensional structures fabrication which are promising for application in nanoelectronics, sensors, THz-applications. We employ two-stage technology of precise anizotropic plasma etching of silicon over e-beam resist and isotropic removal of thermally oxidised defected surface layer of silicon by wet etch. As first the process for nano-fins fabrication on SOI substrate was developed. HSQ resist was used as a negative-tone electron beam resist with good etch-resistance, high resolution and high mechanical stability. The etching was performed by RIE in mix of SF₆ + C₄F₈. plasma. By changing the ratio SF₆:C₄F₈, the sidewall profile angle can be controlled thoroughly. Next step to minimize lateral size of structures and reduce impact of surface defects on electron mobility in core of nanowires was the application of surface thermal oxidation to defected layer. It was used for selective removal of damaged silicon layer and polymer residues. Oxidation was performed with controlled flow of dry oxygen and water vapour. Oxidation rate was precisely controlled by ex-situ spectral ellipsometry on unpatterned chips As a result the arrays of planar sub-20 nm Silicon nanowires with length in the range 200 nm – 500 um were made.

The influence of O₂/Ar mixing ratio on plasma characteristics, densities and fluxes of active species determining the dry etching kinetics in both CF₄/O₂/Ar and CHF3/O2/Ar plasmas was studied. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of O₂ for Ar at constant fraction of CF₄ or CHF₃ in a feed gas noticeably changes electron temperature and electron density, but does not result in the non-monotonic behavior of F atom density. The differences between two gas systems were discussed in details from the point of view of plasma chemistry.

Cellular-automata model of oxygen plasma influence on the integral properties of porous low-K dielectric is studied. The present work investigates the imitative simulation of this process. In our model we consider one isolated pore, which is simulated by cylinder with length L=200 nm and radius 1 nm ignoring the curvature factor. The simulation was performed for 2 million automata steps that correspond to 2 seconds in the real process time. Extrapolating the data to the longer time shows that more and more •CH₃ groups will be replaced by the •OH groups, and over time almost all methyl groups will leave the pore surface (there is not more than 20% of the initial methyl groups amount on the first low-K dielectric 40nm after 2 seconds simulation).

Process of reactive ion etching of Ge₂Sb₂Te₅ thin film was studied in the work. It was found that Ar+O₂ gas mixture has a minimum etching rate (7.4 nm/min) and Ar+SF₆ (37.0 nm/min) mixtures have highest etching rate. Surface roughness decreased from ~0.8 nm before etching to the value of ~0.5 nm after etching. EDXRA showed the absence of the contamination by the components of the gas mixtures after the etching.

The paper presents the experimental results of the combination of AFM lithography and plasma chemical etching the surface of the gallium arsenide samples. Results dilution and application modes for AFM lithography photoresist, also shown on the image forming modes photoresist surface. Showing results nanoprofilirovaniya surface. Results regimes plasma chemical etching. The analysis of the etching rate is etched surface roughness was studied by atomic force microscopy. Judged from the vertical deflection angle of the initial structures and photoresist obtained after etching.

Low temperature etching of organosilicate low-k dielectrics in CF₃Br and CF₄ plasmas is studied. Chemical composition if pristine film and etched were measured by FTIR. Decrease in plasma-induced damage under low-temperature conditions is observed. It is shown that the plasma damage reduction is related to accumulation of reaction products. The reaction products could be removed by thermal bake. In the case of CF₄ plasma, the thickness of CF_x polymer increases with the temperature reduction. This polymer layer leads to strong decrease of diffusion rate of fluorine atoms and as a consequence to reduction of plasma-induced damage (PID). Bromine containing reaction products are less efficient for low-k surface protection against the plasma damage.

A number of different hard X-ray optics elements such as refractive lenses, refractive bi-lenses and multilens interferometers, mirror interferometers can be made of Silicon. The optical performance of these elements depends on the quality of refracting and reflecting surfaces. Cryogenic deep anisotropic etching was proposed for fabrication of parabolic planar lenses and mirror interferometers. The investigation of sidewall roughness was done by AFM and by optical interferometry. Geometrical parameters of structures were measured by SEM. It was observed that roughness of inner sidewalls of etched structures does not exceed 3 nm/um (RMS) and deviation from vertical profile was within 30 nm along 20 um depth.

The dynamic properties of a silicon wafer thermally heated up under a bistable regime in a lamp-based reactor are simulated with regard to an optical non-gomogeneity as a nucleus of a high-temperature phase. The optical non-gomogeneity is represented by a doped layer region on the surface of the wafer imposed by radiation. It is shown that under these conditions temperature switching waves are formed in the wafer. Experimental verification of propagating the switching waves of temperature is obtained at the silicon wafer transition derived from the lower-temperature state to its upper-temperature state and the velocity of the waves is evaluated.

In the heat system modeling lamp-based annealing in the thermal treatment reactor controlled by the heater temperature and the effective heat exchange coefficient the temperature of the lightly doped silicon wafer is investigated in reactors with the convective and combined heat removal. It is shown that, for every system controlling thermal processes there are critical parameters bounding the region of bistable temperature behavior of the wafer. The dependence of the position of the bistability region on the plane of the controlling parameters on the model of the heater and absorber, the thickness and the doping level of silicon wafer, and also the spectral and integral approaches to the description of the heat exchange process is discussed.

Transformation of microstructure of the buried He bubbles of silicon surface layer after He+ low energy plasma immersion ion implantation and subsequent low-thermal annealing were studied by high resolution X-ray diffraction and reflectivity, Rutherford backscattering spectroscopy, transmission electron and atomic force microscopy methods. The ion energies varied in the range 2 – 5 keV at constant exposure ion doses 5×·10¹⁷ cm^-2. Formation of a three-layer structure (amorphous a-SiOx layer at the surface, amorphous a-Si layer with helium bubbles and buried helium bubbles heavy damaged tensile strained crystalline c-Si layer) that is retained after annealing was observed. Helium-filled bubbles are observed in an as-implanted sample. Evolution of the multilayer structure and the bubbles due to annealing are revealed and comparing with the structural parameters of an as-implanted sample was done. The bubbles are shown to trend into two-model distribution after annealing. The characteristic bubble size is determined to be in a range of 2–20 nm. Large size helium-filled bubbles are located in the amorphous a-Si layer. Small size bubbles are revealed inside the damaged crystalline Si layer. These bubbles are a major source of tensile strain in c-Si layer.

Atomic layer deposition (ALD) of Al₂O₃ on Si and AlGaN substrates was studied in situ by means of spectral ellipsometry. Method was used for optimization of process of atomic layer deposition. Optical model takes into account all layers of transparent structure typical for gallium nitride devices Al₂O₃/AlGaN/AlN/GaN. Developed model is able to measure in situ temperature of wafer before the process and its change during the deposition which is critical for development of new process and understanding of chemical reactions. Difference in temperature between chuck and sample were calculated. Spectral ellipsometry was used to determine initial nucleation lag of film growth which is different on silicon and AlGaN surface and chemical transient during the first steps of deposition. Removal of native oxide in AlGaN structures could play key role in observed effects of passivation GaN transistor structures by alumina.

In this work a non-destructive method for measuring the thickness of the dielectric layers consisting of silicon dioxide and silicon nitride has been developed using a scanning electron microscope (SEM) equipped with energy dispersive X-ray spectrometer (EDS). Rising in accelerating voltage of electron beam leads to increasing in the depth of generation of the characteristic X-ray. If the ratio of the signal intensity of one of the substrate’s elements to the noise equal to 3 suggests that the generation’s depth of the characteristic X-ray coincides with the thickness of the overlying film. Dependence of the overlying film's thickness on the accelerating voltage can be plotted. Validation of the results was carried out by using the equation of Anderson-Hassler. The generation’s volume of the characteristic X-Ray was simulated by CASINO program. The simulations results are in good agreement with experimental results for small thicknesses.

Frequency domain simulation is a widely used approach for determine integrated circuits parameters. This approach can be found in most of software tools used in IC industry. Time domain simulation approach shows intensive usage last years due to some advantages. In particular it applicable for analysis of nonlinear and nonstationary systems where frequency domain is inapplicable. Resolution of time domain systems allow see heterogeneities on distance ~1mm, determine it parameters and properties. Authors used approach based on detecting reflected signals from heterogeneities – time domain reflectometry (TDR).

Field effect transistor technology scaling up to 30-60nm gate length and ~10nm gate dielectric, heterojunction bi-polar transistors with 10-30nm base width allows fabricate digital IC’s with 20GHz clock frequency and RF-IC’s with tens GHz bandwidth. Such devices and operation speed suppose transit signal by use microwave lines. There are local heterogeneities can be found inside of the signal path due to connections between different parts of signal lines (stripe line-RF-connector pin, stripe line – IC package pin). These heterogeneities distort signals that cause bandwidth decrease for RF-devices. Time domain research methods of transmission and reflected signals give the opportunities to determine heterogeneities, it properties, parameters and built up equivalent circuits.

Experimental results are provided and show possibility for inductance and capacitance measurement up to 25GHz. Measurements contains result of signal path research on IC and printed circuit board (PCB) used for 12GHz RF chips. Also dielectric constant versus frequency was measured up to 35GHz.

A method to measure mechanical stress in thin films was proposed. Method is based on the geometry variance of thin film’s fragment after it’s been released from substrate. A scanning electron microscope (SEM) was used to measure linear dimensions. Samples were prepared with help of focused ion beam (FIB). Mechanical stress of silicon nitride thin film measured using our method is -1.64 GPa, relative measurement error estimated as 1.2%. Measured value of stress correlates with other method’s existing data. Method can be applied to various materials, that are being used in MEMS technology.

The paper proposes a new method of stress and measurement modes for research of thin dielectric films of MIS structures. The method realizes injection of the most part of charge into gate dielectric in one of stress modes: either current owing through dielectric is constant or voltage applied to gate is constant. In order to acquire an additional information about changing of charge state of MIS structure, the stress condition is interrupted in certain time ranges and during these time ranges the mode, in which structure is, is the mode of measurement. In measurement mode, changing of electric fields at interfaces between dielectric and semiconductor is monitored. By using these data, density of charge, which is accumulated in gate dielectric, and its centroid are calculated. Besides, by using these data, one studies processes of generation and relaxation of charge in dielectric. In order to raise precision of the method and reduce an influence of switching effects in measurement mode, density of measurement current should be much lower than density of stress current.

Study of thermoelectric phenomenon in tunnel contact may discover novel concepts of thermoelectric devices design and improve efficiency of such devices. Application of thin-film microthermocouples for local heat flux measurements is discussed. Numerical modeling of existing and proposed microthermocouples was performed, and conversion coefficients for input power were obtained. Preliminary experiments were performed and from its results new thermocouple designs with better sensitivity were proposed.

Epoxy resins have wide applications in modern industries. To improve the properties of such resins the thermoplastic component is often used. This component dissolves in the epoxy resin at a high temperature. To determine the properties of the obtained cured epoxy matrix with thermoplastic particles it is important to estimate and classify this particle sizes. In this paper we investigate methods for solving these tasks automatically. The thermoplastic particle sizes are analyzed using the microscopy images of the cured epoxy matrix. The digital image processing methods for the thermoplastic particle detection are discussed. The Otsu’s method is implemented for microscopic images with homogeneous background. The Circular Hough Transform method is implemented for microscopic images with big visible particle radii. The results of both methods for the considered images are represented. The parameters of the Gaussian distribution for the thermoplastic particle sizes in a cured epoxy matrix are estimated from the analyzed microscopic images.

Physical principles of fast neutral beams diagnostics methods are considered. In the opening sections an analysis of the methods intended for measurement of beam composition and energy characteristics of the beam components is presented. For the high resolution Doppler spectroscopy method some relations for energy resolution are derived. For the ionization method an approach to the atomic content calculations is developed in cases of a working gas like H₂, N₂, O₂. Further on, the secondary electron emission, calorimetric, and quartz resonator probes are considered. Dependences of the probe responses on the beam parameters are presented. The results obtained can be used for development and design of fast neutral beams diagnostics systems.

The case of the diagonal symmetry of plasma inhomogeneities scanned at two-view emission tomography was investigated. Original method for 2D-tomographic reconstruction utilizing analytical description of local inhomogeneities of the spatial distribution of the density of neutral and charged plasma particles on the chamber cross section was improved.

Multiple quantum (MQ) NMR methods¹ are applied to the analysis of various problems of quantum information processing. It is shown that the two-spin/two-quantum Hamiltonian¹ describing MQ NMR dynamics is related to the flip-flop Hamiltonian of a one-dimensional spin system in the approximation of the nearest neighbor interactions. As a result, it is possible to organize quantum state transfer along a linear chain. MQ NMR experiments are performed on quasi-one-dimensional chains of ¹⁹F nuclei in calcium fluorapatite Ca₅(PO₄)₃F. Relaxation of the MQ NMR coherences is considered as the simplest model of decoherence processes. A theory of the dipolar relaxation of the MQ NMR coherences in one-dimensional systems is developed. A good agreement of the theoretical predictions and the experimental data is obtained.

Quantum correlations in multiple quantum (MQ) NMR experiments are investigated in two-spin systems (dimers). In the initial moment of time one spin is in a pure quantum polarized state and the other spin is in the thermodynamic equilibrium state defined by the temperature of the sample. MQ NMR dynamics of dimers is investigated. It is shown that MQ NMR coherences of only the zeroth and second orders emerge in such a system. The intensities of those coherences are calculated. Entangled states appear in the course of the system evolution in the MQ NMR experiment. The quantum discord is obtained in the high temperature approximation.

The concept of multifunctional device (a quantum node) composed of a semiconductor single-electron four-level doublequantum dot coupled to an optical microcavity resonator is developed. The terahertz laser field and voltage biases provide an external control. The structure enables flexible driving via appropriate variations of field amplitudes and switching between resonant and off-resonant modes. As shown this hybrid electron-photon system can be used as the charge qubit with flying-to-stationary qubit conversion or the single-photon transistor and several others. Each of listed devices works in the specific regime of system evolution. For example, the qubit is robust when the optical resonator and laser Rabi frequencies dominate the dissipation rates – the so-called strong coupling or coherent regime. From another hand, in order to attain the steady-state one has to work in the so-called weak coupling or incoherent regime when the dissipation rates are comparable to or greater than the Rabi frequencies. Further, the single-photon driving is required for spectroscopic applications of this system. We numerically investigate the population dynamics to reveal the parameter choice corresponding to each device. The model is based on Lindblad formalism where all incoherent processes are considered as the markovian ones. The time dependencies of populations and spectrograms for different pairs of parameters are obtained. The specific features concerned with working characteristics of the quantum node in different modes are discussed.

The problem of practical realization of a compact sensing device with high-spatial resolution is addressed. The principle of external field measuring uses analysis of transmission or reflection spectra from a diamond microstructure composed of three-microring optical resonators. Due to Zeeman and Stark shifts of energy levels of NV-centers formed in the microring edge the hybrid electron-photon spectrum changes depending on the strength and direction of magnetic and electric fields, respectively. A probe laser with a tunable wavelength excites the structure in a single-photon regime and its response enables one to detect the fields via spectral behavior. The model of the sensor dynamics accounts for both coherent driving and incoherent processes (center relaxation, dephasing and photon leakage) in terms of Lindblad formalism. With use of the finite-difference time-domain numerical method a three-ring spectrum is calculated and eigenmodes close to NV-center zero-phonon line are found. Electromagnetic field shows whispering-gallery behavior, so NV-center is coupled to a common three-ring mode antinode. As we show in the steady-state regime our approach gives the possibility of external fields measuring in a large intensity range with high sensitivity.

In this paper we propose the scheme of an optical quantum sensor of external electric field which design based on a double quantum dot (DQD) placed in a high quality optical semiconductor microcavity (MC). The characteristic DQD frequencies of the observed nontrivial single-electron dynamics are determined using spectroscopic simulation in the steady-state regime. Due to Stark shifts of excited energy levels of DQD located at the edge of microdisk the hybrid electron-photon spectrum changes depending on the strength and direction of electric field. Probe laser with tunable wavelength excites the structure in single-photon regime and photon spectrum from MC is detected. We analyze the system’s behavior with the use of a standard technique based on solving the Lindblad equation for the density matrix of an electron-phonon system with regard to the escape of photons from the cavity to the continuum and the relaxation of an excited electron with the emission of a photon or phonon. It will be shown that due to the design features, such a device has several advantages: high sensitivity, availability of different channels for excitation and measuring, the ability to accurately detect the spatial distribution of the field.

We study spectroscopy of a diamond three-microring isomer theoretically and optimize its design to provide good transport and dissipative properties. In a framework of the tight-binding model spectrum and electromagnetic field distribution of the isomer are calculated with account of photon energy dissipation. We employ a weak laser as a probe for the isomer spectrum. The probability of a single-photon excitation due to the laser photon injection is calculated in a steady-state regime. The spectroscopic response is represented by three clearly distinguishable peaks corresponding to isomer whispering-gallery eigenmodes and the electromagnetic field of each mode has antinodes near ring edge. Fine tuning of the microring spectrum can be provided by deposition of additional layers on the isomer surface. We obtain dependence of the eigenmode wavelength on thickness and refractive index of the additional layers. NV-center placed at the mode antinode in one of the microrings interacts with the isomer mode. This leads to anticrossing in spectroscopic response of the isomer. Due to Stark effect exited spin states of electron is strongly affected by external electric or magnetic fields. This effect can be used in designing of magnetic or electric field sensor.

Single-electron solitons (or movable polarons) can originate near a metal surface owing to interaction with image charges. Image charges (really, surface charges) appear in response to the ‘instant’ electron density (probability density). Interaction with metal electrodes (as well as any polarization of the environment) much affects a charge qubits functioning. To verify this theory we propose a crucial experiment based on the motion of electrons in a magnetic field in presence of weak and strong polarization.

We study a continuous-time quantum walk of interacting fermions on a cycle graph. By finding analytical solutions and simulating the dynamics of two fermions we observe a diverse structure of entangled states of indistinguishable fermions. The relation between entanglement of distinguishable qutrits and indistinguishable electrons is observed. Restrictions imposed by the symmetry of a cycle graph are derived. Possible realization of a quantum walk in an array of semiconductor quantum dots is discussed.

Continuous-time quantum walks on a cycle graph are analyzed in the presence of decoherence. The electron evolution in the nanostructure composed of ring of tunnel-coupled semiconductor quantum dots is considered as realistic model for quantum walks on a cycle graph. Quantum-classical crossover from fast quantum dynamics to classical diffusive behavior is observed as decoherence rate parameter grows. The dependence of transition decoherence rate and mixing time versus size of the graph are studied both analytically and numerically.

We present the novel technique for broadband biphoton field generation in the single spatial mode. The method is based on using short interaction length in nonlinear media. Small generation efficiency can be compensated by increasing the part of biphoton intensity per one spatial mode by means of pump focusing.

We consider realistic measurement systems, where measurements are accompanied by decoherence processes. The aim of this work is the construction of methods and algorithms for precise quantum measurements with fidelity close to the fundamental limit. In the present work the notions of ideal and non-ideal quantum measurements are strictly formalized. It is shown that non-ideal quantum measurements could be represented as a mixture of ideal measurements. Based on root approach the quantum state reconstruction method is developed. Informational accuracy theory of non-ideal quantum measurements is proposed. The monitoring of the amount of information about the quantum state parameters is examined, including the analysis of the information degradation under the noise influence. The study of achievable fidelity in non-ideal quantum measurements is performed. The results of simulation of fidelity characteristics of a wide class of quantum protocols based on polyhedrons geometry with high level of symmetry are presented. The impact of different decoherence mechanisms, including qubit amplitude and phase relaxation, bit-flip and phase-flip, is considered.

The new method of multivariate data analysis based on the complements of classical probability distribution to quantum state and Schmidt decomposition is presented. We considered Schmidt formalism application to problems of statistical correlation analysis. Correlation of photons in the beam splitter output channels, when input photons statistics is given by compound Poisson distribution is examined. The developed formalism allows us to analyze multidimensional systems and we have obtained analytical formulas for Schmidt decomposition of multivariate Gaussian states. It is shown that mathematical tools of quantum mechanics can significantly improve the classical statistical analysis. The presented formalism is the natural approach for the analysis of both classical and quantum multivariate systems and can be applied in various tasks associated with research of dependences.

The estimation of high order correlation function values is an important problem in the field of quantum computation. We show that the problem can be reduced to preparation and measurement of optical quantum states resulting after annihilation of a set number of quanta from the original beam. We apply this approach to explore various photon bunching regimes in optical states with gamma-compounded Poisson photon number statistics. We prepare and perform measurement of the thermal quantum state as well as states produced by subtracting one to ten photons from it. Maximum likelihood estimation is employed for parameter estimation. The goal of this research is the development of highly accurate procedures for generation and quality control of optical quantum states.

Reliable generation and measurement of triphoton states has yet to be achieved in laboratory. We give an overview of the problems in generating and measuring triphoton quantum states and analyze several protocols of quantum measurements, which allow for high precision of reconstruction when sizes of available statistical data samples are limited. The tomography procedure under investigation is based on root approach to state estimation. In particular, we use the generalized Fisher information matrix to assess the accuracy of the quantum state parameters measurement. We use tomographic protocols, based on the symmetry of the Platonic solids. We demonstrate the capability to reconstruct triphoton quantum states with precision close to the maximum achievable value allowed by quantum mechanics.

The simulation of quantum circuits is significantly important for the implementation of quantum information technologies. The main difficulty of such modeling is the exponential growth of dimensionality, thus the usage of modern high-performance parallel computations is relevant. As it is well known, arbitrary quantum computation in circuit model can be done by only single- and two-qubit gates, and we analyze the computational structure and properties of the simulation of such gates. We investigate the fact that the unique properties of quantum nature lead to the computational properties of the considered algorithms: the quantum parallelism make the simulation of quantum gates highly parallel, and on the other hand, quantum entanglement leads to the problem of computational locality during simulation. We use the methodology of the AlgoWiki project (algowiki-project.org) to analyze the algorithm. This methodology consists of theoretical (sequential and parallel complexity, macro structure, and visual informational graph) and experimental (locality and memory access, scalability and more specific dynamic characteristics) parts. Experimental part was made by using the petascale Lomonosov supercomputer (Moscow State University, Russia). We show that the simulation of quantum gates is a good base for the research and testing of the development methods for data intense parallel software, and considered methodology of the analysis can be successfully used for the improvement of the algorithms in quantum information science.

Quantum discord is a non-classical correlation beyond quantum entanglement, which is a possible resource for quantum information technologies. The computation of quantum discord is a difficult problem due to the necessity of global optimization.

We present the original semi-algebraic method for the effective computation of discord in the multi-qubit spin chain interacting with the impurity spin. We use the random mutations algorithm in a non-standard way: not for the minimization, but for the verification of inequalities. More specifically, we use it to check the constancy condition of the minimum of conditional entropy. After that, the discord can be calculated effectively by the algebraic procedures, and we construct the discord surface for different values of the structural parameter of the model.

The considered approach for the verification of inequalities by global optimization algorithms can be used in a wide variety of applications, especially, in the theory of quantum correlations, which contains a lot of definitions based on minimums and maximums.

Quantum key distribution (QKD) as a technology is being actively implemented into existing urban telecommunication networks. QKD devices are commercially available products. While sending single photons through optical fiber, adjacent fibers, which are used to transfer classical information, might influence the amount of registrations of single photon detectors. This influence is registered, since it directly introduces a higher quantum bit error rate (QBER) into the final key [1-3]. Our report presents the results of the first tests of the QKD device, developed in the Russian Quantum Center. These tests were conducted in Moscow, and are the first of such a device in Russia in urban optical fiber telecommunication networks. The device in question is based on a two-pass auto-compensating optical scheme, which provides stable single photon transfer through urban optical fiber telecommunication networks [4,5]. The single photon detectors ID230 by ID Quantique were used. They operate in free-running mode, and with a quantum effectiveness of 10 % have a dark count ~10 Hz. The background signal level in the dedicated fiber was no less than 5.6∙10^-14 W, which corresponds to 4.4∙10⁴ detector clicks per second. The single mode fiber length in Moscow was 30.6 km, the total attenuation equal to 11.7 dB. The sifted quantum key bit rate reached values of 1.9 kbit/s with the QBER level equal to 5.1 %. Methods of lowering the influence of crosstalk on the QBER are considered.

In the report are discussed the laboratory test results of SPAD detectors with InGaAs / InP avalanche photodiodes, operating in Geiger mode. Device operating in synchronous mode with the dead timer setting for proper working conditions of photodiodes. The report materials will showing the functional block diagram of the detector, real operating signals in the receiver path and clock circuits and main results of measurements. The input signal of the synchronous detector is the clock, which determines the time positions of expected photons arrival. Increasing the clock speed 1-300 MHz or getting more time positions of the time grid, we provide increased capacity for time position code of signals, when QKD information transmitted over the nets. At the same time, the maximum attainable speed of photon reception is limited by diode dead time. Diode quantum noise are minimized by inclusion of a special time interval – dead time 0.1-10 usec, after each received and registered a photon. The lowest attainable value of the dead time is determined as a compromise between transients in electrical circuits, passive avalanche «quenching» circuit and thermal transients cooling crystal diode, after each avalanche pass though photodiode. Achievable time and speed parameters are discussed with specific examples of detectors.

An optical scheme for polarization encoding BB84 protocol is described. Fiber electro-optical LiNbO₃ phase modulators based on Pockels cells provide both polarization states generation for Alice and basis choosing for Bob at high frequency, requiring low operation voltages (V_π < 5V). Proposed scheme uses only one laser source, which guarantee the indistinguishability of the pulses and active basis choosing allows the system to have two single photon detectors in contrast to the four in the standard polarization encoding schemes. Two phase modulators compensate each others’ polarization mode dispersion, caused by the natural birefringence of the lithium niobate crystal. The system consists of standard components and has simple configuration. The principle of operation is experimentally demonstrated.

We describe computer methods of simulation of Tavis-Cummings based quantum models, and apply those methods to specific tasks, conductivity measurements of atomic excitations in short chains of optical cavities with two-level atoms, C-Sign optical model, and dark states. For the conductivity measurements, we reproduce the dephasing assisted transport and quantum bottleneck effects and show their relation, and study the "which way?" problem. For the C-Sign optical model, we use the model to find optimal parameters of the system to minimize the error. For dark states, we study their collapse due to dephasing noise.

An ensemble of identical two level atoms in dark state neither adsorbs nor emits photons due to destructive interference. Dark states have numerous applications. It can be used for the source of energy for nano-devices; the space of dark states is decoherence free and can serve as the carrier for the fault tolerant quantum computations, etc. Since a dark state does not interact with the electromagnetic field it is an eigenstate of Tavis-Cummings Hamiltonian and the preparation of such states requires the exit from this model. We show how to prepare a dark state by the photon pumping and drain from the optical cavity with two atoms, one from which has Stark or Zeeman splitting of energy levels. This splitting is removed before photon drain from the cavity. The dark state yield after one such cycle has the order of energy level splitting. We show the scheme of the experiment, in which such cycles repeat until the dark state is produced with high probability and the results of its computer simulation. The structure of dark states is briefly discussed.

We study the process of selective measurements of states of individual quantum systems - Josephson qubit – using nonlinear oscillator, working in the mesoscopic regime, when the number of quanta in the measuring process varies from a few dozen to a few hundred. Quantum Monte-Carlo method simulated dissipative dynamics of the system "qubit - oscillator" and the measurement process of a qubit state to modify the number of quanta of the oscillator. It is shown that for different Rabi-pulses of the recording state of a qubit the discrimination of states is possible, as well as the measurement of the effect of back-action of the measuring device, including separation of the prepared superposition state – carrying out statistical projective measurements.