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PROCEEDINGS VOLUME 10104

Gallium Nitride Materials and Devices XII
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Volume Details

Volume Number: 10104
Date Published: 27 March 2017

Table of Contents
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Front Matter: Volume 10104
Author(s): Proceedings of SPIE
Recent progress of high-quality GaN substrates by HVPE method
Author(s): Hajime Fujikura; Takehiro Yoshida; Masatomo Shibata; Yohei Otoki
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Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation)
Author(s): Michal Bockowski
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Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation)
Author(s): Yuh-Shiuan Liu; Tsung-Ting Kao; Yuanzeng Zhu; Young Jae Park; Karan Mehta; Shuo Wang; Shyh-Chiang Shen; Douglas Yoder; Fernando A. Ponce; Theeradetch Detchprohm; Russell D. Dupuis
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Predicted lattice-misfit stresses in a gallium-nitride (GaN) film
Author(s): E. Suhir; S. Yi
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Carrier dynamics studies of III-nitride materials using photo-acoustic and photoluminescence measurements
Author(s): Atsushi A. Yamaguchi; Takashi Nakano; Shigeta Sakai; Haruki Fukada; Yuya Kanitani; Shigetaka Tomiya
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Facet temperature measurement of GaN-based laser diodes using thermoreflectance spectroscopy (Conference Presentation)
Author(s): Dorota Pierscinska; Kamil Pierscinski; Lucja Marona; Przemyslaw Wisniewski; Piotr Perlin; Maciej Bugajski
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Intersubband transitions in the THz using GaN quantum wells (Conference Presentation)
Author(s): Caroline B. Lim; Akhil Ajay; Catherine Bougerol; Jörg Schörmann; David A. Browne; Mark Beeler; Eva Monroy
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Freezing of quantum confinement Stark effect at low temperatures? (Conference Presentation)
Author(s): Lucja Marona; Agata Bojarska; Grzegorz Staszczak
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Long wavelength emission on relaxed InGaN substrates (Conference Presentation)
Author(s): Armelle Even; Gautier Laval; Olivier Ledoux; Pierre Ferret; David Sotta; Eric Guiot; Francois Levy; Ivan-Christophe Robin; Amélie Dussaigne
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Design of Al-rich AlGaN quantum well structures for efficient UV emitters
Author(s): Mitsuru Funato; Shuhei Ichikawa; Kyosuke Kumamoto; Yoichi Kawakami
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AlGaN-based metal-semiconductor-metal photodetectors with high external quantum efficiency at low operating voltage
Author(s): M. Brendel; F. Brunner; A. Knigge; M. Weyers
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Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation)
Author(s): Saulius Marcinkevicius; Tomas K. Uzdavinys; Humberto M. Foronda; Daniel E. Cohen; James S. Speck; Claude Weisbuch
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Gallium nitride: a material for future betavoltaic (Conference Presentation)
Author(s): Szymon Grzanka; Piotr Rafal Laskowski; Lucja Marona; Gregory Targowski; Barbara Zareba; Krzysztof Wincel; Marcin Klimasz; Tomasz Lotz; Piotr Perlin; Tadek Suski
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Impact of InGaN alloy disorder on LED properties (Conference Presentation)
Author(s): Claude Weisbuch
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Electrical and optical properties of flexible nanowire blue light-emitting diodes under mechanical bending (Conference Presentation)
Author(s): Mohsen Asad; Renjie Wang; Yong-Ho Ra; William S. Wong; Zetian Mi
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Radiative recombination in polar, non-polar, and semi-polar III-nitride quantum wells
Author(s): Andreas Hangleiter; Torsten Langer; Philipp Henning; Fedor Alexej Ketzer; Philipp Horenburg; Ernst Ronald Korn; Heiko Bremers; Uwe Rossow
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Photo-induced droop in blue to red light-emitting GaInN-GaN heterostructures (Conference Presentation)
Author(s): Thi Huong Ngo; Bernard Gil; Benjamin Damilano; Aimeric Courville; Philippe De Mierry
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Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy
Author(s): Weijian Chen; Xiaoming Wen; Michael Latzel; Jianfeng Yang; Shujuan Huang; Santosh Shrestha; Robert Patterson; Silke Christiansen; Gavin Conibeer
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Health-friendly high-quality white light using violet-green-red laser and InGaN nanowires-based true yellow nanowires light-emitting diodes
Author(s): Bilal Janjua; Tien K. Ng; Chao Zhao; Dalaver H. Anjum; Aditya Prabaswara; Giuseppe Bernardo Consiglio; Chao Shen; Boon S. Ooi
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Quantum-dot like localization in AlGaN nanowires (Conference Presentation)
Author(s): Matthias Belloeil; Bruno Daudin; Bruno Gayral
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Single-photon emission from a high-purity hexagonal boron nitride crystal (Conference Presentation)
Author(s): Luis J. Martinez; Thomas Pelini; Victor Waselowski; Jeronimo R. Maze; Bernard Gil; Guillaume Cassabois; Vincent Jacques
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Growth of tapered GaN nanorod and the study of its growth mechanism (Conference Presentation)
Author(s): Xu Zhang; Charng-Gan Tu; Yu-Feng Yao; Chen-Yao Chao; Sheng-Hung Chen; Chun-Han Lin; Chia-Ying Su; Yean-Woei Kiang; Chih-Chung Yang
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Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy
Author(s): Filip Hjort; Ehsan Hashemi; David Adolph; Tommy Ive; Åsa Haglund
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Current status and future on GaN power devices for automobile applications (Conference Presentation)
Author(s): Tetsu Kachi
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Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density
Author(s): Kexin Li; Shaloo Rakheja
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GaN HEMTs with p-GaN gate: field- and time-dependent degradation
Author(s): G. Meneghesso; M. Meneghini; I. Rossetto; E. Canato; J. Bartholomeus; C. De Santi; N. Trivellin; E. Zanoni
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Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation)
Author(s): Fan Ren; Stephen J. Pearton; Tsung Sheng Kang; David J. Cheney; Brent P. Gila
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Electrical characteristics of high-power AlGaN-GaN high electron mobility transistors irradiated with protons and heavy ions
Author(s): Yongkun Sin; Jeremy Bonsall; Zachary Lingley; Miles Brodie; Maribeth Mason
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200-mm GaN/Si technology for power device applications (Conference Presentation)
Author(s): Takashi Egawa
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Piezoelectric modulation of surface voltage in GaN and AlGaN/GaN: charge screening effects and 2DEG
Author(s): Marshall Wilson; Bret Schrayer; Alexandre Savtchouk; Bob Hillard; Jacek Lagowski
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Investigation of GaN Fin-HEMTs with micron-scale fin width
Author(s): Li-Cheng Chang; Ming Yang; Yi-Hong Jiang; Chao-Hsin Wu
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Recent improvement in nitride lasers
Author(s): Shingo Masui; Yoshitaka Nakatsu; Daiji Kasahara; Shin-ichi Nagahama
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Demonstration of nitride-based lasers excited by electron beam (Conference Presentation)
Author(s): Motoaki Iwaya; Takafumi Hayashi; Noriaki Nagata; Takashi Senga; Sho Iwayama; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Takahiro Matsumoto
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Modeling of optical and electrical confinements in nitride VCSELs
Author(s): P. Śpiewak; M. Wasiak; A. K. Sokół; R. P. Sarzała
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AlGaInN laser-diode technology for optical clocks and atom interferometry
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; S. Stanczyk; M. Leszczyński; P. Wisniewski; R. Czernecki; G. Targowski; C. Carson; D. Stothard; L. J. McKnight
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Suppressing the incorporation of carbon impurity in AlGaN:Mg for green LDs with low operation voltage (Conference Presentation)
Author(s): Jianping Liu
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Current status and future works of high-power deep UV LEDs (Conference Presentation)
Author(s): Rakjun Choi
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Over 10% EQE AlGaN deep-UV LED using transparent p-AlGaN contact layer (Conference Presentation)
Author(s): Hideki Hirayama; Takayoshi Takano; Jun Sakai; Takuya Mino; Kenji Tsubaki; Noritoshi Maeda; Masafumi Jo; Issei Ohshima; Takuma Matsumoto; Norihiko Kamata
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Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes
Author(s): Cheng Liu; Yu Kee Ooi; S. M. Islam; Huili Grace Xing; Debdeep Jena; Jing Zhang
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Improved light extraction and quantum efficiencies for UVB LEDs with UV-transparent p-AlGaN superlattices (Conference Presentation)
Author(s): Martin Guttmann; Martin Hermann; Johannes Enslin; Sarina Graupeter; Luca Sulmoni; Christian Kuhn; Tim Wernicke; Michael Kneissl
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Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications
Author(s): Chao Shen; Tien Khee Ng; Changmin Lee; John T. Leonard; Shuji Nakamura; James S. Speck; Steven P. Denbaars; Ahmed Y. Alyamani; Munir M. El-Desouki; Boon S. Ooi
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Direct comparison of structural and optical properties of a nitride-based core-shell microrod LED by means of highly spatially-resolved cathodoluminescence and u-Raman (Conference Presentation)
Author(s): Frank Bertram; Marcus Müller; Peter Veit; Christian Nenstiel; Gordon Callsen; Matin Mohajerani; Jana Hartmann; Hao Zhou; Hergo-Heinrich Wehmann; Axel Hoffmann; Andreas Waag; Jürgen H. Christen
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Novel device designs enabled by lattice-matched GaN-ZnGeN2 heterostructures (Conference Presentation)
Author(s): Hongping Zhao; Lu Han
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Gallium nitride light sources for optical coherence tomography
Author(s): Graham R. Goldberg; Pavlo Ivanov; Nobuhiko Ozaki; David T. D. Childs; Kristian M. Groom; Kenneth L. Kennedy; Richard A. Hogg
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InGaN-based flexible light emitting diodes
Author(s): C. Bayram
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8-inch GaN on Si-based wafer-level chip-scale package (Conference Presentation)
Author(s): Jun-Youn Kim
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Processing and characterization of high resolution GaN/InGaN LED arrays at 10 micron pitch for micro display applications
Author(s): Ludovic Dupré; Marjorie Marra; Valentin Verney; Bernard Aventurier; Franck Henry; François Olivier; Sauveur Tirano; Anis Daami; François Templier
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