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PROCEEDINGS VOLUME 0946

Spectroscopic Characterization Techniques for Semiconductor Technology III
Editor(s): Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce
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Volume Details

Volume Number: 0946
Date Published: 9 August 1988
Softcover: 27 papers (242) pages
ISBN: 9780892529810

Table of Contents
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Modulation Spectroscopy Of Semiconductor Microstructures: An Overview
Author(s): Fred H. Pollak; O. J. Glembocki
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Photoreflectance And Thermoreflectance Of A GaAs/Ga0.82Al0.18As Multiple Quantum Well: Mechanisms of Electromodulation
Author(s): H. Shen; S. H. Pan; Fred H. Pollak; R. N. Sacks
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Photoreflectance And The Seraphin Coefficients In Quantum Well Structures
Author(s): X. L. Zheng; D. Helman; B. Lax; F. A. Chambers
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Surface Potential Characterization Of The Photoelectrochemical Etching System By Photoreflectance And Electroreflectance Techniques
Author(s): A. E. Willner; O. J. Glembocki; D. V. Podlesnik; E. D. Palik; R. M. Osgood
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Photoreflectance Study of Ion-implanted CdTe
Author(s): P. M. Amirtharaj; R. C. Bowman; R. L. Alt
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Optical And Structural Characterization Of Boron Implanted GaAs
Author(s): R. C. Bowman; D. N. Jamieson; P. M. Adams; R. L. Alt
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Effective Bandgap Shrinkage Measurement In Silicon Solar Cell By Electro-Reflectance Method
Author(s): Tapan K. Gupta
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Analysis Of Semiconductor Materials And Structures By Spectroellipsometry
Author(s): D. E. Aspnes
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Optical Measurement Of Built-In And Applied Electric Fields In AlxGa1_xAs/GaAs Heterostructures
Author(s): Paul G. Synder; Kenneth G. Merkel; John A. Woollam
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GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic Ellipsometry
Author(s): Kenneth G. Merkel; Paul G. Snyder; John A. Woollam; Samuel A. Alterovitz
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In Situ Optical Measurements Of The Growth Of GaAs and AlGaAs By Molecular Beam Epitaxy
Author(s): D. E. Aspnes; J. P. Harbison; A. A. Studna; L. T. Florez; M. K. Kelly
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Algorithm For LI Near Gradient Refractive Indices
Author(s): Roy F. Potter
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Optical Study Of Interface Effects In TCO/Amorphous Semiconductors Systems
Author(s): F. Demichelis; G. Kaniadakis; E. Tresso; A. Tagliaferro; R. R. Arya
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Raman Characterization Of Semiconductor Superlattices
Author(s): J. Sapriel
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Reactive Ion Etching of MBE GaAs: A Raman Scattering Study
Author(s): Bahram Roughani; Joubran J. Jbara; Joseph T. Boyd; Thomas D. Mantei; Howard E. Jackson
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Alloy Disorder Effects In Molecular Beam Epitaxically Grown AlxGa1_xAs Examined Via Raman And Rayleigh Scattering And Near Edge Luminescence
Author(s): Pudong Lao; Wade C. Tang; A. Madhukar; P. Chen
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Characterization of MeV iOn-Implanted GainAs/GaAs Using X-Ray And Raman Techniques
Author(s): Chu R. Wie; K. Xie; H. M. Kim; J. F. Chen; G. Burns; F. H. Dacol; G. D. Pettit; J. M. Woodall
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Strain Distribution Of MBE Grown GexSi1_x/Si Layers by Raman Scattering
Author(s): S. J. Chang; M. A. Kallel; K. L. Wang; R. C. Bowman; Peter Chow
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Growth-Induced Complex Defects In GaAs Grown By Molecular Beam Epitaxy
Author(s): A. C. Beye; G. Neu; J. P. Contour; J. C. Garcia; B. Gil
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Photoluminescence Studies Of InGaAlAs Quaternary Alloys
Author(s): Eric D. Jones; L.Ralph Dawson
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The Recombination Mechanism Of Excited-State Acceptor-Acceptor Pairs In GaAs
Author(s): Nobukazu Ohnishi; Yunosuke Makita; Masahiko Mori; Paul Phelan; Katsuhiro Irie
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TEM Characterization of II-VI Compound Semiconductors
Author(s): Herbert F. Schaake
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Quantitative Depth Profiling Analysis Of (Al,Ga)As Structures By Secondary Neutral Mass Spectrometry (SNMS)
Author(s): Nicola Kelly; Ulrich Kaiser
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Study Of Thin Epitaxial Film Formation By Germanium Segregation In Silicon Oxidation
Author(s): S. M. Prokes; O. J. Glembocki; E. P. Donovan; R. Stahlbush; W. E. Carlos; H. Dietrich; A. Christou
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Scanning Tunneling Spectroscopy
Author(s): D. K. Biegelsen
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Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission Study
Author(s): Renyu Cao; Ken Miyano; K.Ken. Chin; Ingolf Lindau; William E. Spicer
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Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films
Author(s): D. Jousse; J. Kanicki; J. Stathis; Y. Cros
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