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Proceedings of SPIE Volume 0796

Growth of Compound Semiconductors
Editor(s): Robert L. Gunshor; Hadis Morkoc
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Volume Details

Volume Number: 0796
Date Published: 20 April 1987
Softcover: 32 papers (221) pages
ISBN: 9780892528318

Table of Contents
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Growth And Characterization Of GaAs/AlAs Superlattice Alloys
Author(s): T. J. Drummond; E. D. Jones; H. P. Hjalmarson; B. L. Doyle
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Substrate Misorientation Effects On (A1,Ga)As And (Al,Ga)As/GaAs Structures Grown By Molecular Beam Epitaxy
Author(s): Raymond K. Tsui; Gary D. Kramer; J. A. Curless; Marilyn S. Peffley
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Growth And Characterization Of GaAs[sub]1-x[/sub]Sb[sub]x[/sub] On InP By Molecular Beam Epitaxy
Author(s): J. Klem; D. Huang; H. Morkoc; N. Otsuka
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Anisotropic Growth Processes On GaAs(100) And Ge(100)
Author(s): P. R. Pukite; S. Batra; P. I. Cohen
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Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates
Author(s): R. Houdre; G. Munns; H. Morkoc; C. Choi; N. Otsuka; S. L. Zhang; D. Levi; M. V. Klein
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Study And Characterization Of Low-Pressure AsH[sub]3[/sub] Cracking Cells In Gas Source MBE: Growth Of GaAs And AlGaAs Epitaxy
Author(s): C. w. Litton; L. W. Kapitan; P. W. Yu; D. C. Look
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Photoreflectance Spectra Of Al[sub]x[/sub]Ga[sub]1-x[/sub]As
Author(s): D. Huang; G. Ji; U. K. Reddy; H. Morkoc
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Molecular Beam Epitaxy Growth And Characterization Of Lattice Matched And Strained Channel In[sub]x[/sub]Ga[sub]1-X[/sub]As/In[sub]y[/sub]Al[sub]1-y[/sub]As Modulation Doped Stuctures On InP
Author(s): C. K. Peng; A. Ketterson; H. Morkoc
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Optical And Magnetic Characterization Of ZnSe/MnSe Superlattices
Author(s): A. V. Nurmikko; L. A. Kolodziejski; R. L. Gunshor
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Photoassisted Mbe: A New Approach To Substitutional Doping
Author(s): J. F. Schetzina; R. N. Bicknell; N. C. Giles; R. L. Harper
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Crystal Growth Of p-ZnSe And ZnSe p-n Junctions
Author(s): Jun-ichi Nishizawa; Yasuo Okuno
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Stoichiometric Property Of ZnSe/GaAs Interface Grown By MOCVD
Author(s): Ikuo Suemune; Koutoku Ohmi; Takashi Kanda; Yasuo Kan; Masamichi Yamanishi
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Metalorganic Molecular Beam Epitaxial Growth Of ZnSe And ZnS
Author(s): Hideyasu Ando; Akira Taike; Ryuuhei Kimura; Makoto Konagai; Kiyoshi Takahashi
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Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs And (100) Ge: A Comparative Study Of Material Quality
Author(s): R. M. Park; J. Kleiman; H. A. Mar
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Molecular Beam Epitaxial Growth Of ZnSe On (100) GaAs Substrates
Author(s): H. Cheng; J. M. DePuydt; J. E. Potts; S. K. Mohapatra; T. L. Smith
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MBE Of ZnSe On GaAs Epilayers
Author(s): L. A. Kolodziejski; R. L. Gunshor; M. R. Melloch; M. Vaziri; C. Choi; N. Otsuka
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Measurement Of Band Discontinuities For The Double Heterojunction ZnSe:MnSe:ZnSe
Author(s): H. Asonen; J. Lilja; A. Vuoristo; M. Ishiko; M. Pessa
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Identification Of Substitutional Acceptors In Bridgman-Grown (Cd,Mn)Te
Author(s): P. Becla; D. Heiman; J. Misiewicz; P. A. Wolff; D. Kaiser
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Growth Of ZnSe On GaAs Epitaxial Layers In A Dual Chamber Molecular Beam Epitaxy System
Author(s): M. C. Tamargo; J. L. de Miguel; R. E. Nahory; B. J. Skromme
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Computer Simulation, Rheed And Photoluminescence Studies Of The Role Of Growth Kinetics In Mbe Of III-V Semiconductors
Author(s): S. V. Ghaisas; M. Thomsen; S. B. Ogale; A. Madhukar
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Monte Carlo Simulation Of The Growth Of ZnSe By MBE
Author(s): R. Venkatasubramanian; N. Otsuka; S. Datta; L. A. Kolodziejski; R. L. Gunshor
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Molecular Dynamics Simulation Of Beam Deposition Of Low-Energy (10-100 Ev) Si Atoms On The Si(111) Surface
Author(s): Brian W. Dodson; Paul A. Taylor
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RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces
Author(s): P. Chen; T. C. Lee; N. M. Cho; A. Madhukar
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Gas Phase Chemistry And Transport Phenomena In MOCVD Reactors
Author(s): Klavs F. Jensen; Dimitrios I. Fotiadis; Peter W. Lee; Donald R. McKenna; Harry K. Moffat
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Entrance Effects In A Horizontal Atmospheric-Pressure MOCVD Reactor
Author(s): E. S. Johnson; G. E. Legg; N. E. Schumaker
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InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy
Author(s): M. A. Tischler; N. G. Anderson; R. M. Kolbas; S. M. Bedair
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Mechanism Of Crystal Growth Of GaAs In Chemical Vapor Deposition (CVD)
Author(s): Jun-ichi Nishizawa; Hidenori Shimawaki; Toru Kurabayashi; Masakazu Kimura
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Defect Characterization In InP Epitaxial Layers Grown By LP-MOCVD
Author(s): A. M. Huber; J. di Persio; M. A. di Forte-Poisson; C. Brylinski; R. Bisaro; C. Grattepain; O. Lagorsse
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Material Properties And Device Application Of GaAs And GaAsP Grown On Si Using Superlattice Intermediate Layers By MOCVD
Author(s): Shiro Sakai; Masayoshi Umeno; Young Soon Kim
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Characteristics Of OMVPE-Grown CdTe And HgCdTe On GaAs
Author(s): I. B. Bhat; N. R. Taskar; K. Patel; J. E. Ayers; S. K. Ghandhi; J. Petruzzello; D. Olego
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Selective Epitaxy Of Quantum Well Structures By Atmospheric Pressure OMCVD
Author(s): Kei May Lau; Stephen H. Jones; Jung-Kuei Hsu; Daniel C. Bertolet
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Experimental and theoretical investigations on the formation of acceptor-acceptor pair emission in GaAs
Author(s): Yunosuke Makita; Masahiko Mori; Nobukazu Ohnishi; Katsuhiro Irie; Shigeru Shigetomi; Hideki Tanaka
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