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Proceedings of SPIE Volume 0524

Spectroscopic Characterization Techniques for Semiconductor Technology II
Editor(s): Fred H. Pollak; Raphael Tsu
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Volume Details

Volume Number: 0524
Date Published: 28 June 1985
Softcover: 21 papers (175) pages
ISBN: 9780892525591

Table of Contents
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An Overview Of Surface Analysis Techniques And Their Applications In The Semiconductor Industry (New Developments In Esca)
Author(s): Donna K. Bakale; Robert Linder; Charles E. Bryson
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Application Of X-Ray Diffraction Techniques To Semiconductor Materials Characterization
Author(s): S. S. Laderman; M. Scott; R. Smith; A. Nel
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Studies Of The Si/SiO2 Interface Using Synchrotron Radiation
Author(s): Michael H. Hecht; F. J. Grunthaner
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Ion Beam Spectroscopy For III - V Semiconductor Characterization
Author(s): P. P. Pronko; R. S. Bhattacharya
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Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect Identification
Author(s): N. M. Johnson
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Impurity Site Determination From High Resolution Localized Vibrational Mode Infrared Absorption Measurements
Author(s): William M. Theis
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Deep Level Derivative Spectroscopy Of Semiconductors By Wavelength Modulation Techniques
Author(s): R. Braunstein; S. M. Eetemadi; R. K. Kim
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Infrared Absorption Spectroscopy For The Characterization Of Oxygen In Silicon
Author(s): W. C. O'Mara
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Deep Level Studies Of Undoped CdTe
Author(s): P. S. Nayar
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The Dynamics Of Reflection High Energy Electron Diffraction Intensity Behaviour As A Probe Of Crystal Growth: Computer Simulations And Measurements During Molecular Beam Epitaxial Growth Of GaAs/AlXGa1-XAs(100)
Author(s): A. Madhukar; S. V. Ghaisas; T. C. Lee; M. Y. Yen; P. Chen; J. Y. Kim; P. G. Newman
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Photoreflectance Characterization Of GaAs/A1GaAs Thin Films, Heterojunctions And Multiple Quantum Well Structures
Author(s): O. J. Glembocki; B. V. Shanabrook; N. Bottka; W. T. Beard; J. Comas
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Nonlinear And Time Resolved Studies Of Native Defects In CDSE.
Author(s): D. L. Rosen; Q. X. Li; R. R. Alfano
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Faraday Rotation And Ellipticity In Silicon Mosfets: Properties Of Tne 2D Electron Gas
Author(s): Herbert Piller
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Picosecond To Microsecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon
Author(s): D. M. Roberts; J. F. Palmer; T. L. Gustafson
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EELS And XPS Investigation On Amorphous Silicon Carbide Alloy Film
Author(s): Zhang Fang-qing; Chen Guang-hua; Xu Xi-xiang
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Raman Spectroscopy Study Of Polish-Induced Surface Strain In <100> And <111> GaAs and InP
Author(s): H. Shen; Z. Hang; Fred H. Pollak
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Characterization Of Amorphous And Polycrystalline Si and Ge Films
Author(s): J. Gonzalez-Hernandez; S. S. Chao; D. Martin; R. Tsu
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Raman Scattering From Phonons And Magnons In Magnetic Semiconductor, MnTe
Author(s): Sohrab R. Mobasser; Timothy R. Hart
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Raman Scattering Determination Of Carrier Concentration And Surface Space Charge Layer IN <100> n-GaAs
Author(s): H. Shen; Fred H. Pollak; R. N. Sacks
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Elastic Electron Tunneling Spectroscopy On Niobium/A-Silicon Oxide/Lead Junctions
Author(s): S. Celaschi; A. K. Green
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Electron Paramagnetic Resonance Characterization Of Defects In Semiconductors
Author(s): Eicke R. Weber
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