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Proceedings of SPIE Volume 0463

Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials
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Volume Details

Volume Number: 0463
Date Published: 31 May 1984
Softcover: 22 papers (153) pages
ISBN: 9780892524983

Table of Contents
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Silicon Material Phenomena In VLSI Circuit Processing
Author(s): Howard R. Huff
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Megavolt Ion Implantation Into Silicon
Author(s): P. F. Byrne; N. W. Cheung
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Electrical Characteristics Of Amorphous Ni[sub]36[/sub]W[sub]64[/sub] Contacts On Silicon
Author(s): M. F. Zhu; I. Suni; M-A. Nicolet
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Electronic And Chemical Structure Of Metal-Silicon Interfaces
Author(s): P J Grunthaner; F J. Grunthaner
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The Growth Of Platinum Nickel Silicide By Thermal Anneal Of An Alloy Film On Silicon
Author(s): Alan E. Morgan; William T. Stacy; Russell C Ellwanger; Yde Tamminga
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Thin Film Reaction Investigation By Backscattering Spectroscopy - W Marker Study Of Pd[sub]2[/sub]Ge Formation
Author(s): D. M. Scott; C S Pai; S S. Lau
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Infrared Properties Of Heavily Implanted Silicon, Germanium And Gallium Arsenide
Author(s): William G Spitzer; Lihyeh Liou; Kou-Wei Wang; Charles N. Waddell; Graham Hubler; Sook-Il Kwun
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An Indirect Plasma-Enhanced Chemical Vapor Deposition Technique For Gate Dielectrics
Author(s): K P. Pande; D. Gutierrez
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Characterization Of Single Crystal Cu[sub]2[/sub]S/CdS Heterojunctions By High Resolution Electron Microscopy
Author(s): T. Sands; R. Gronsky; J. Washburn
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Diffusion Of Be And Mn During Damage Recovery Of Ion Implanted GaAs
Author(s): H. Kanber; M. Feng; J. M. Whelan
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Hydrogen Implantation Into Gallium Arsenide: Range And Damage Distributions
Author(s): J. M. Zavada; H. A. Jenkinson; R. G. Wilson; D. K. Sadana
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Low Temperature Native Oxide Reduction From GaAs Surfaces
Author(s): W. E. Stanchina; J. M. Whelan; K. Chalermtiragool
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Secondary Ion Mass Spectrometry Of Semiconductors
Author(s): R. G. Wilson
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Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si0[sub]2[/sub] Interface
Author(s): J. H. Mazur; R. Gronsky; J. Washburn
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Effect Of Heating Rate End Annealing Temperature On Twin Formation In As[sup]+[/sup] Implanted (lll) Silicon
Author(s): Yih-Cheng Shih; Jack Washburn; Steven C. Shatas
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The Formation Of Amorphous Layers By The Implantation Of Arsenic And Phosphorus Into Silicon
Author(s): S. Prussin; David I. Margolese; Richard N. Tauber
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Comparison Of Damage Profiles Obtained By Angle Lapping/Staining And Cross-Sectional Transmission Electron Microscopy
Author(s): C. H. Carter; W. Maszara; G. A. Rozgonyi; D. K. Sadana
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Optical Properties Of GaAs-GaAlAs Quantum Well Structures
Author(s): Ronald L. Greene; K. K Bajaj
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Polarization Sensitive Raman Microprobe Studies Of Local Crystal Quality In Laser Annealed Silicon
Author(s): J. B. Hopkins; L. A. Farrow; G. J. Fisanick
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Quantitative Analysis Of Phosphosilicate Glass Films On Silicon Wafers For Calibration Of X-Ray Fluorescence Spectrometry Standards
Author(s): Suzanne H. Weissman
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Mode Conversion Of Acoustooptic Interaction In Crossed Channel Waveguide
Author(s): Ching T. Lee
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The Characteristics Of Oxidation Of Polycrystalline Silicon Films In VLSI
Author(s): Wang Yang-yuan; Zhang Ai-zhen
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