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Proceedings of SPIE Volume 0285

Infrared Detector Materials
Editor(s): H. R. Riedl
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Volume Details

Volume Number: 0285
Date Published: 11 June 1981
Softcover: 0 papers (0) pages
ISBN: 9780892523184

Table of Contents
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Evolving Perspectives And Unifying Characteristics Of The IV-VI Semiconductors
Author(s): Robert S. Allgaier
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Epitaxial Thin Film IV-VI Detectors: Device Performance And Basic Material Properties
Author(s): A. C. Bouley; T. K. Chu; G. M. Black
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Preparation Of Epitaxial Thin Film Lead Salt Infrared Detectors
Author(s): T. K. Chu; A. C. Bouley; G. M. Black
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The Pb/PbS0.5Se0.5 Interface And Performance Of Pb/PbS0.5Se0.5 Photodiodes
Author(s): M. Drinkwine; J. Rozenbergs; S. Jost; A. Amith
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Optical Studies Of Defect States In The IV-VI Compounds
Author(s): H. D. Drew
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Physics Of Surface Space Charge Layers On PbTe
Author(s): Ryan E. Doezema
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Magnetoresistance In IV-VI Semiconductors
Author(s): J. B. Restorff; B. B. Houston
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Compound Semiconductor Materials For Near-Infrared Photodetectors
Author(s): G. E. Stillman; L. W. Cook; T. J. Roth; M. M. Tashima
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Low Temperature Liquid-Phase Epitaxy (LPE) Growth Of Ga0.47In0.53As
Author(s): D. P. Mullin; A. R. Clawson
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GaAs1-xSbx Quadrant Detector Development For 1 µm Application
Author(s): N. Bottka; Marian E. Hills
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Liquid Phase Epitaxial Growth Of Hg1-xCdxTe From Te-Rich Solutions
Author(s): T. C. Harman
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Slider Liquid-Phase Epitaxy (LPE) Of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te
Author(s): J. L. Schmit; R. J. Hager; R. A. Wood
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Effect Of Ultraviolet Irradiation On The Performance Of (Hg,Cd)Te Photoconductors
Author(s): P. J. Kannam; P. LoVecchio
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Properties Of rf Triode-Sputtered (Hg1-xCdx)Te Thin Films
Author(s): Roy H. Cornely; Lawrence Suchow; Michael Mulligan; Riaz Haq
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Charge Trapping At The Hg0.7Cd0.3Te-Anodic Oxide Interface
Author(s): B. K. Janousek; M. J. Daugherty; R. B. Schoolar
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Properties Of Passivant Films On HgCdTe - Interaction With The Substrate
Author(s): G. D. Davis; T. S. Sun; S. P. Buchner; N. E. Byer
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Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties
Author(s): O. J. Marsh; R. Baron; J. P. Baukus; M. H. Young; G. D. Robertson
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Improved Uniformity In Float Zone Si:Ga
Author(s): Hiroshi Kimura; Dennis J. O'Connor; M. Frances Harvey; Carlos B. Afable; Glenn D. Robertson; Ogden J. Marsh
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Silicon-Germanium Alloys For Infrared Detection
Author(s): Hiroshi Kimura; Harvey Winston; Dennis J. O'Connor; Joseph A. Henige
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Silicon-Rich Si-Ge Alloys For Infrared Detectors - Material Properties
Author(s): R. Baron; M. H. Young; H. Kimura; H. Winston
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Development Of In-X Doped Silicon As An Infrared Detector Material
Author(s): D. K. Arch; D. E. Schafer
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Solution Growth Of Thallium-Doped Silicon For 3-5 Micrometer Photoconductive Detectors
Author(s): D. E. Schafer
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