Share Email Print


Infrared Detector Materials
Editor(s): H. R. Riedl
Format Member Price Non-Member Price
Softcover $105.00 * $105.00 *

*Available as a photocopy reprint only. Allow two weeks reprinting time plus standard delivery time. No discounts or returns apply.

Volume Details

Volume Number: 0285
Date Published: 11 June 1981
Softcover: 0 papers (0) pages
ISBN: 9780892523184

Table of Contents
show all abstracts | hide all abstracts
Evolving Perspectives And Unifying Characteristics Of The IV-VI Semiconductors
Author(s): Robert S. Allgaier
Show Abstract
Epitaxial Thin Film IV-VI Detectors: Device Performance And Basic Material Properties
Author(s): A. C. Bouley; T. K. Chu; G. M. Black
Show Abstract
Preparation Of Epitaxial Thin Film Lead Salt Infrared Detectors
Author(s): T. K. Chu; A. C. Bouley; G. M. Black
Show Abstract
The Pb/PbS0.5Se0.5 Interface And Performance Of Pb/PbS0.5Se0.5 Photodiodes
Author(s): M. Drinkwine; J. Rozenbergs; S. Jost; A. Amith
Show Abstract
Optical Studies Of Defect States In The IV-VI Compounds
Author(s): H. D. Drew
Show Abstract
Physics Of Surface Space Charge Layers On PbTe
Author(s): Ryan E. Doezema
Show Abstract
Magnetoresistance In IV-VI Semiconductors
Author(s): J. B. Restorff; B. B. Houston
Show Abstract
Compound Semiconductor Materials For Near-Infrared Photodetectors
Author(s): G. E. Stillman; L. W. Cook; T. J. Roth; M. M. Tashima
Show Abstract
Low Temperature Liquid-Phase Epitaxy (LPE) Growth Of Ga0.47In0.53As
Author(s): D. P. Mullin; A. R. Clawson
Show Abstract
GaAs1-xSbx Quadrant Detector Development For 1 µm Application
Author(s): N. Bottka; Marian E. Hills
Show Abstract
Liquid Phase Epitaxial Growth Of Hg1-xCdxTe From Te-Rich Solutions
Author(s): T. C. Harman
Show Abstract
Slider Liquid-Phase Epitaxy (LPE) Of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te
Author(s): J. L. Schmit; R. J. Hager; R. A. Wood
Show Abstract
Effect Of Ultraviolet Irradiation On The Performance Of (Hg,Cd)Te Photoconductors
Author(s): P. J. Kannam; P. LoVecchio
Show Abstract
Properties Of rf Triode-Sputtered (Hg1-xCdx)Te Thin Films
Author(s): Roy H. Cornely; Lawrence Suchow; Michael Mulligan; Riaz Haq
Show Abstract
Charge Trapping At The Hg0.7Cd0.3Te-Anodic Oxide Interface
Author(s): B. K. Janousek; M. J. Daugherty; R. B. Schoolar
Show Abstract
Properties Of Passivant Films On HgCdTe - Interaction With The Substrate
Author(s): G. D. Davis; T. S. Sun; S. P. Buchner; N. E. Byer
Show Abstract
Extrinsic Silicon Focal Plane Arrays - Influence Of Material Properties
Author(s): O. J. Marsh; R. Baron; J. P. Baukus; M. H. Young; G. D. Robertson
Show Abstract
Improved Uniformity In Float Zone Si:Ga
Author(s): Hiroshi Kimura; Dennis J. O'Connor; M. Frances Harvey; Carlos B. Afable; Glenn D. Robertson; Ogden J. Marsh
Show Abstract
Silicon-Germanium Alloys For Infrared Detection
Author(s): Hiroshi Kimura; Harvey Winston; Dennis J. O'Connor; Joseph A. Henige
Show Abstract
Silicon-Rich Si-Ge Alloys For Infrared Detectors - Material Properties
Author(s): R. Baron; M. H. Young; H. Kimura; H. Winston
Show Abstract
Development Of In-X Doped Silicon As An Infrared Detector Material
Author(s): D. K. Arch; D. E. Schafer
Show Abstract
Solution Growth Of Thallium-Doped Silicon For 3-5 Micrometer Photoconductive Detectors
Author(s): D. E. Schafer
Show Abstract

© SPIE. Terms of Use
Back to Top