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Proceedings Paper

Improvement of light extraction efficiency of GaN-based flip-chip light-emitting diodes by patterning the double sides of sapphire
Author(s): Xiaoqing Du; Hong Chen; Guangming Zhong; Xiangkun Dong; Weimin Chen; Xiaohua Lei; Xianming Liu
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Paper Abstract

The double-side patterned sapphire structure was proposed to improve the light extraction efficiency (LEE) of flip-chip GaN-based light-emitting diodes (LEDs). The influences of sapphire substrate thickness, pattern shapes and sizes on LEE were analyzed by Monte Carlo simulation method. Using silicon oxide as mask membrane, double-side patterned sapphires were processed by the standard lithography and the reaction-ion-etching (RIE) technology. The LEDs with patterned sapphire were packaged. The measured light outputs of LEDs verified our predicted effects.

Paper Details

Date Published: 27 November 2012
PDF: 9 pages
Proc. SPIE 8560, LED and Display Technologies II, 856008 (27 November 2012); doi: 10.1117/12.999694
Show Author Affiliations
Xiaoqing Du, Chongqing Univ. (China)
Hong Chen, Chongqing Univ. (China)
Guangming Zhong, Chongqing Univ. (China)
Xiangkun Dong, Chongqing Univ. (China)
Weimin Chen, Chongqing Univ. (China)
Xiaohua Lei, Chongqing Univ. (China)
Xianming Liu, Chongqing Univ. (China)

Published in SPIE Proceedings Vol. 8560:
LED and Display Technologies II
Yanbing Hou; Bin Hu, Editor(s)

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