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Proceedings Paper

The influence of growth parameters on the formation on InAs/GaAs by MOCVD
Author(s): Hui Wang; Qi Wang; Zhi-Gang Jia; Ying-Ce Yan; Yong-Qing Huang; Xiao-Min Ren
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Paper Abstract

InAs/GaAs quantum dots (QDs) were grown by Metal-Organic Chemical Vapour Deposition (MOCVD) in the Stranski-Krastanow growth mode. The influence of growth parameters such as V/III ratio, growth temperature, QDs deposit thickness and the deposition rate of the overgrowth layer have been investigated. Through the room temperature photoluminescence (PL) spectra, we have obtained the quantum dots’ characters. The growth of QDs is very sensitive to the parameters, and the parameters influence the QDs quality nonlinearly. After an extensive study of these growth parameters, we achieve a balance of all the growth parameters with which InAs/GaAs QDs with 80meV of full width at half maximum (FWHM) at 1.12μm have been achieved.

Paper Details

Date Published: 27 November 2012
PDF: 7 pages
Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 855511 (27 November 2012); doi: 10.1117/12.999608
Show Author Affiliations
Hui Wang, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Zhi-Gang Jia, Beijing Univ. of Posts and Telecommunications (China)
Ying-Ce Yan, Beijing Univ. of Posts and Telecommunications (China)
Yong-Qing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xiao-Min Ren, Beijing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 8555:
Optoelectronic Devices and Integration IV
Xuping Zhang; Hai Ming; Joel M. Therrien, Editor(s)

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